IL215A/216A/217A PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER • FEATURES • High Current Transfer Ratio, IF=1 mA IL215A—20% Minimum IL216A—50% Minimum IL217A—100% Minimum • Isolation Voltage, 2500 VACRMS • Electrical Specifications Similar to Standard 6 Pin Coupler • Industry Standard SOIC-8 Surface Mountable Package • Standard Lead Spacing, .05" • Available in Tape and Reel Option (Conforms to EIA Standard RS481A) • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Underwriters Lab File #E52744 (Code Letter P) DESCRIPTION Dimensions in inches (mm) .120±.005 (3.05±.13) .240 (6.10) Anode 1 .154±.005 Cathode 2 CL (3.91±.13) NC 3 NC 4 .016 (.41) Pin One ID .192±.005 (4.88±.13) 40° .015±.002 (.38±.05) .004 (.10) .008 (.20) .008 (.20) .050 (1.27) typ. .021 (.53) .020±.004 (.15±.10) 2 plcs. 8 7 6 5 NC Base Collector Emitter 7° .058±.005 (1.49±.13) .125±.005 (3.18±.13) 5° max. R.010 (.25) max. Lead Coplanarity ±.0015 (.04) max. Characteristics (TA=25°C) The IL215A/216A/217A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL215A//216A/217A comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. The high CTR at low input current is designed for low power consumption requirements such as CMOS microprocessor interfaces. Maximum Ratings Emitter Peak Reverse Voltage .....................................6.0 V Continuous Forward Current ........................ 60 mA Power Dissipation at 25°C............................90 mW Derate Linearly from 25°C ......................1.2 mW/°C Detector Collector-Emitter Breakdown Voltage ...............30 V Emitter-Collector Breakdown Voltage .................7 V Collector-Base Breakdown Voltage ..................70 V Power Dissipation ......................................150 mW Derate Linearly from 25°C ......................2.0 mW/°C Package Total Package Dissipation at 25°C Ambient (LED + Detector).....................................280 mW Derate Linearly from 25°C ......................3.3 mW/°C Storage Temperature .................. –55°C to +150°C Operating Temperature .............. –55°C to +100°C Soldering Time at 260°C ............................. 10 sec. Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage VF 1.0 1.5 V IF=1 mA Reverse Current IR 0.1 100 µA VR=6.0 V Capacitance CO 25 pF VR=0 BVCEO BVECO 30 7 V V IC=10 µA IE=10 µA Dark Current, Collector-Emitter ICEOdark 5 nA VCE=10 V IF=0 Capacitance, Collector-Emitter CCE 10 pF VCE=0 % IF=10 mA, VCE=5 V Detector Breakdown Voltage Collector-Emitter Emitter-Collector 50 Package DC Current Transfer Ratio IL215A IL216A IL217A CTRDC Saturation Voltage, Collector-Emitter VCEsat Isolation Test Voltage VIO Capacitance, Input to Output CIO 0.5 pF Resistance, Input to Output RIO 100 GΩ Switching Time ton,toff 3.0 µs 20 50 100 50 80 130 0.5 2500 5–1 This document was created with FrameMaker 4.0.4 IF=1 mA, IC=0.1 mA VACRMS IC=2 mA, RE=100 Ω, VCE=10 V Figure 5. Collector-base photocurrent versus LED current Figure 1. Forward voltage versus forward current 1.3 Icb - Collector-base Current - µA Vf-Forward Voltage - V 1.4 Ta = -55°C 1.2 Ta = 25°C 1.1 1.0 0.9 Ta = 100°C 0.8 0.7 .1 1 10 If- Forward Current - mA 100 Iceo - Collector-Emitter - nA NCT Rce - Normalized CTRce Vce = 5 V 0.5 Vce = 0.4 V 0.0 .1 1 10 IF - LED Current - mA 100 10 1 .1 .1 100 Figure 3. Collector-emitter current versus LED current 10 10 10 10 10 3 Vce = 10V 1 0 TYPICAL 10 -2 -20 NHFE(sat) - Normalized Saturated HFE Ice - Collector-emitter Current - mA 4 0 20 40 60 80 100 Ta - Ambient Temperature - °C 2.0 Vce = 10 V 50 Vce = 0.4 V 0 1.5 25°C Normalized to: Ib = 20µA Vce = 10 V Ta = 25 °C 1.0 Vce = 0.4 V 0.5 0.0 1 10 100 Ib - Base Current - µA 1000 Figure 8. Normalized non-saturated and saturated CTRce versus LED current 100 NCTRce - Normalized CTRce Normalized to: Vcb = 9.3 V 10 IF = 1 mA Ta = 25 °C 1 .1 1 10 IF - LED Current - mA 70°C 50°C 100 Figure 4. Normalized collector-base photocurrent versus LED current NIcb - Normalized Icb 5 Figure 7. Normalized saturated HFE versus base current and temperature 100 .1 100 10 -1 Ta = 25°C 1 10 IF - LED Current - mA 10 10 2 150 .1 1 Figure 6. Collector-emitter leakage current versus temperature Collector emitter leakage current versus temperature 1.5 1.0 Ta = 25°C Vcb = 9.3 V IF - LED Current - mA Figure 2. Normalized non-saturated and saturated CTRce versus LED current Normalized to: Vce = 10 V IF = 10 mA Ta = 25 °C 1000 100 2.0 Normalized to: Ta = 25 °C Vce = 5 V IF = 1 mA 1.5 Vce = 5 V 1.0 0.5 Vce = .4 V 0.0 .1 1 10 IF - LED Current - mA 100 IL215A/216A/217A 5–2 Figure 9. Normalized non-saturated and saturated collector-emitter current versus LED current Normalized to: Ta = 25°C Vce = 5 V IF = 1 mA 10 80 Vce = 5 V tpLH - Low-High Propagation Delay - µs NIce - Normalized Ice 100 Figure 13. Low to high propagation delay versus LED current 7 and load resistor Vce = .4 V 1 .1 .01 .1 1 10 IF - LED Current - mA 100 Figure 10. Normalized collector-base photocurrent versus LED current .1 .01 1 10 100 IF - LED Current - mA 0 1.0 5 10 15 IF - LED Current - mA 20 Normalized to: Ib = 20µA Vce = 10 V Ta = 25°C 25°C -20°C 0.8 0.6 0.4 10 100 Ib - Base Current - µA 1000 Figure 15. Typical switching characteristics versus base resistance (saturated operation) 100 Ta = 25°C Vcb = 9.3 V Switching time (µs) Icb - Collector-base photocurrent -µa Ta = 25°C, Vcc = 5 V, Vth = 1.5 V 0 1 100 10 1 Input: IF =10mA 50 Pulse width=100 mS Duty cycle=50% F T OF 10 5 TON 1.0 .1 .01 .1 1 10 100 IF - LED Current - mA 10K 1000 50K 100K 500K 1M Base-emitter resistance, RBE (Ω) Figure 12. High to low propagation delay versus LED current and load resistor Figure 16. Typical switching timesversus load resistance 1000 20 10KΩ 15 4.7KΩ 10 Ta = 25°C Vcc = 5 V Vth = 1.5 V Switching time (µS) tpHL - High-Low Propagation Delay - µs 2KΩ 50°C 1000 Figure 11. Collector-base photocurrent versus LED current 1000 20 70°C NHFE - Normalized HFE NIcb - Normalized Icb 1 .1 4.7KΩ 1.2 Normalized to: Ta = 25°C Vce = 5 V IF = 1 mA .01 40 Figure 14. Normalized non-saturated HFE versus base current and temperature 100 10 10KΩ 60 2KΩ 5 0 0 5 10 15 IF - LED Current - mA Input: 500 IF=10 mA Pulse width=100 mS Duty cycle=50% 100 50 10 TON 5 1 20 FF TO 0.1 0.5 1 5 10 50 100 Load resistance RL (KΩ) IL215A/216A/217A 5–3