DN2450 N-Channel, Depletion-Mode, Vertical DMOS FET Features Description • • • • • • This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. High-input impedance Low-input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakages Applications • • • • • Normally-on switches Battery operated systems Voltage to current converters Constant current sources Current and voltage limiters 2015 Microchip Technology Inc. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. DS20005404A-page 1 DN2450 Package Type DRAIN DRAIN SOURCE SOURCE DRAIN GATE GATE TO-252 (D-PAK) TO-243AA (SOT-89) See Table 2-1 for pin information DS20005404A-page 2 2015 Microchip Technology Inc. DN2450 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS† Drain-to-source voltage................................................................................................................................................................ BVDSX Drain-to-gate voltage....................................................................................................................................................................BVDGX Gate-to-source voltage................................................................................................................................................................... ±20V Operating and storage temperature ............................................................................................................................. -55°C to +150°C Maximum junction temperature.....................................................................................................................................................150°C † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. 1.1 ELECTRICAL SPECIFICATIONS TABLE 1-1: DC AND AC CHARACTERISTICS Electrical Specifications: Unless otherwise specified, for all specifications TA =TJ = +25°C Symbol Parameter Min Typ Max Units Conditions Drain-to-source breakdown voltage 500 – – V VGS= -5.0V, ID= 100µA Gate-to-source off voltage -1.5 – -3.5 V VDS= 25V, ID= 10µA – – -4.5 – – 100 – – 1.0 µA VDS= BVDSX, VGS= -10V – – 1.0 mA VDS= 0.8 BVDSX, VGS= -10V, TA= 125°C (Note 2) 700 – – mA VGS= 0V, VDS= 25V Static drain-to-source on-state resistance – 7.0 10 Ω VGS= 0V, ID= 300mA Change in RDS(ON) with temperature – – 1.1 %/°C DC Parameters (Note 1, unless otherwise stated) BVDSX VGS(OFF) ∆VGS(OFF) Change in VGS(OFF) with temperature IGSS ID(OFF) IDSS RDS(ON) ∆RDS(ON) Gate body leakage Drain-to-source leakage current Saturated drain-to-source current mV/°C VDS= 25V, ID= 10µA (Note 2) nA VGS= ±20V, VDS= 0V VGS= 0V, ID= 300mA (Note 2) AC Parameters (Note 2) GFS Forward transconductance 500 – – CISS Input capacitance – 150 200 COSS Common source output capacitance – 40 55 CRSS Reverse transfer capacitance – 15 25 td(ON) Turn-on delay time – – 15 Rise time – – 20 Turn-off delay time – – 15 Fall time – – 15 Diode forward voltage drop – – Reverse recovery time – 800 tr td(OFF) tf mmho VDS= 10V, ID= 300mA pF VGS= -10V, VDS= 25V, f = 1MHz ns VDD= 25V, ID= 300mA, RGEN= 25Ω, 1.8 V VGS= -5.0V, ISD= 300mA (Note 1) – ns VGS= -5.0V, ISD= 300mA (Note 2) Diode Parameters VSD trr Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle. 2: Specification is obtained by characterization and is not 100% tested. 2015 Microchip Technology Inc. DS20005404A-page 3 DN2450 TABLE 1-2: TABLE 1-3: TYPICAL THERMAL RESISTANCE Package θja TO-252 (D-PAK) 81°C/W TO-243AA (SOT-89) 133°C/W THERMAL CHARACTERISTICS Package ID1 continuous (mA) ID pulsed (mA) Power Dissipation @TA = 25°C (W) IDR1 (mA) IDRM (mA) TO-252 (D-PAK) 350 1000 2.52 350 1000 2 230 900 TO-243AA (SOT-89) 1. 2. 2.0 230 900 1.6 ID continuous is limited by max rated Tj Mounted on FR4 board, 25mm x 25mm x 1.57 mm PIN DESCRIPTION The locations of the pins are listed in Package Type. TABLE 2-1: PIN DESCRIPTION Pin # TO-252 Pin # TO-243AA Function 1 1 GATE 3 3 SOURCE 2,4 2,4 DRAIN DS20005404A-page 4 2015 Microchip Technology Inc. DN2450 3.0 APPLICATION INFORMATION Figure shows the switching waveform and test circuit for DN2450. 0V VDD 90% INPUT -10V Pulse Generator 10% t(ON) td(ON) VDD t(OFF) tr td(OFF) RGEN 10% 90% 0V FIGURE 3-1: OUTPUT tf 10% OUTPUT RL INPUT D.U.T. 90% Switching Waveforms and Test Circuit Product Summary BVDSX/BVDGX (V) RDS(ON) (max) (Ω) IDSS (min) (mA) 500 10 700 2015 Microchip Technology Inc. DS20005404A-page 5 DN2450 4.0 PACKAGING INFORMATION 4.1 Package Marking Information TO-252 (D-PAK) Example XXXX XXXXX e3 YYWWNNN DN 2450 e3 1517343 3-lead TO-243AA * (SOT-89) XXXYYWW NNN Legend: XX...X Y YY WW NNN e3 * Note: DS20005404A-page 6 Example DN4E517 343 Product Code or Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. 2015 Microchip Technology Inc. DN2450 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Side View Top View Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. Symbol Dimensions (mm) A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e 1.50 BSC e1 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. 2015 Microchip Technology Inc. DS20005404A-page 7 DN2450 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. DS20005404A-page 8 2015 Microchip Technology Inc. DN2450 APPENDIX A: REVISION HISTORY Revision A (July 2015) • Update file to new format 2015 Microchip Technology Inc. DS20005404A-page 9 DN2450 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device - XX X - Package Environmental Options X Media Type Device: DN2450 = N-Channel, Depletion-Mode, vertical DMOS FET Package: K4 N8 = TO-252 (D-PAK) = TO-243AA (SOT-89) Environmental G = Lead (Pb)-free/ROHS-compliant package Media Type: (blank) = 2000/Reel DS20005404A-page 10 Examples: a) DN2450K4-G b) DN2450N8-G TO-252 package, 2000/reel TO-243AA package, 2000/reel 2015 Microchip Technology Inc. DN2450 Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, MediaLB, MOST, MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. The Embedded Control Solutions Company and mTouch are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet, KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2015, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. ISBN: 978-1-63277-585-6 QUALITYMANAGEMENTSYSTEM CERTIFIEDBYDNV == ISO/TS16949== 2015 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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