BSP 752 T Smart Power High-Side-Switch Features Product Summary 62 V · Overload protection Overvoltage protection Vbb(AZ) · Current limitation Operating voltage Vbb(on) · Short circuit protection On-state resistance RON 200 mW · Thermal shutdown with restart Nominal load current I L(nom) 1.3 A · Overvoltage protection (including load dump) · Fast demagnetization of inductive loads · Reverse battery protection with external resistor · CMOS compatible input 6...52 V Loss of GND and loss of Vbb protection · ESD - Protection · · Very low standby current Application • All types of resistive, inductive and capacitive loads • µC compatible power switch for 12 V, 24 V and 42 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS â technology. Fully protected by embedded protection functions. Page 1 2000-03-07 BSP 752 T Block Diagram + V bb Voltage source Overvoltage protection Current limit Gate protection V Logic OUT Limit for unclamped ind. loads Charge pump Level shifter Temperature sensor Rectifier IN ESD Load Logic miniPROFET GND Load GND Signal GND Pin Symbol Function 1 GND Logic ground 2 IN 3 OUT Output to the load 4 NC not connected 5 Vbb Positive power supply voltage 6 Vbb Positive power supply voltage 7 Vbb Positive power supply voltage 8 Vbb Positive power supply voltage Input, activates the power switch in case of logic high signal Page 2 2000-03-07 BSP 752 T Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Value Unit Supply voltage Vbb 52 Supply voltage for full short circuit protection Vbb(SC) 50 Continuous input voltage VIN -10 ... +16 Load current (Short - circuit current, see page 5) IL self limited Current through input pin (DC) IIN ±5 mA Operating temperature Tj -40 ...+150 °C Storage temperature Tstg -55 ... +150 Power dissipation 1) Ptot 1.5 W Inductive load switch-off energy dissipation 1)2) EAS 125 mJ V A single pulse, (see page 8) Tj =150 °C, I L = 1 A Load dump protection 2) VLoadDump3)= VA + V S RI=2W, t d=400ms, VIN= low or high, VA=13,5V V V/RDGGXPS RL = 13.5 W 73.5 RL = 27 W 83.5 Electrostatic discharge voltage (Human Body Model) VESD according to ANSI EOS/ESD - S5.1 - 1993 kV ESD STM5.1 - 1998 ±1 ±5 Input pin all other pins Thermal Characteristics Thermal resistance @ min. footprint Rth(JA) - 95 - Thermal resistance @ 6 cm 2 cooling area 1) Rth(JA) - 70 83 K/W 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 16) 2not tested, specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150W resistor in GND connection. A resistor for the protection of the input is integrated. Page 3 2000-03-07 BSP 752 T Electrical Characteristics Parameter and Conditions Symbol DW7M &9EE 9XQOHVVRWKHUZLVHVSHFLILHG Values min. typ. Unit max. Load Switching Capabilities and Characteristics On-state resistance mW RON Tj = 25 °C, IL = 1 A, Vbb = 9...52 V - 150 200 Tj = 150 °C - 270 380 1.3 1.7 - A µs Nominal load current; Device on PCB 1) IL(nom) TC = 85 °C, Tj £ 150 °C Turn-on time to 90% VOUT ton - 80 180 to 10% VOUT toff - 80 200 dV/dton - 0.7 2 -dV/dtoff - 0.9 2 Operating voltage Vbb(on) 6 - 52 Undervoltage shutdown of charge pump Vbb(under) Tj = -40...+85 °C - - 4 Tj = 150 °C - - 5.5 - 4 5.5 RL = 47 W Turn-off time RL = 47 W Slew rate on 10 to 30% VOUT , V/µs RL = 47 W, Vbb = 13.5 V Slew rate off 70 to 40% VOUT , RL = 47 W, Vbb = 13.5 V Operating Parameters Undervoltage restart of charge pump Vbb(u cp) Standby current I bb(off) µA Tj = -40...+85 °C, V IN = low - - 15 Tj = +150 °C2) , VIN = low - - 18 I L(off) - - 5 I GND - 0.8 2 Leakage output current (included in Ibb(off)) V VIN = low Operating current mA VIN = high 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 16) 2higher current due temperature sensor Page 4 2000-03-07 BSP 752 T Electrical Characteristics Parameter and Conditions Symbol DW7M &9 EE 9XQOHVVRWKHUZLVHVSHFLILHG Values min. typ. Unit max. Protection Functions Initial peak short circuit current limit (pin 5 to 3) A IL(SCp) T j = -40 °C, Vbb = 20 V, tm = 150 µs - - 9 T j = 25 °C - 6.5 - T j = 150 °C 4 - - T j = -40...+150 °C, V bb > 40 V , ( see page 11 ) - 5 1) - Vbb < 40 V - 6 - Vbb > 40 V - 4.5 - VON(CL) 59 63 - Vbb(AZ) 62 - - Thermal overload trip temperature Tjt 150 - - °C Thermal hysteresis DTjt - 10 - K Reverse battery 3) -Vbb - - 52 V Drain-source diode voltage (VOUT > Vbb) -VON - 600 - Repetitive short circuit current limit IL(SCr) T j = Tjt (see timing diagrams) Output clamp (inductive load switch off) V at V OUT = V bb - V ON(CL), I bb = 4 mA Overvoltage protection 2) I bb = 4 mA Reverse Battery mV T j = 150 °C 1not tested, specified by design 2 see also VON(CL) in circuit diagram on page 7 3Requires a 150 W resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input current has to be limited (see max. ratings page 3). Page 5 2000-03-07 BSP 752 T Electrical Characteristics Parameter and Conditions Symbol DW7M &9 EE 9XQOHVVRWKHUZLVHVSHFLILHG Values Unit min. typ. max. Input Input turn-on threshold voltage VIN(T+) - - 2.2 Input turn-off threshold voltage VIN(T-) 0.8 - - Input threshold hysteresis DVIN(T) - 0.4 - Off state input current IIN(off) 1 - 25 IIN(on) 3 - 25 RI 2 3.5 5 V µA VIN = 0.7 V On state input current VIN = 5 V Input resistance (see page 7) Page 6 kW 2000-03-07 BSP 752 T Terms Inductive and overvoltage output clamp Ibb + V bb V Z Vbb V I IN IL IN PROFET ON VON OUT OUT V GND GND IN V bb R IGND VOUT GND VON clamped to 59V min. Overvoltage protection of logic part Input circuit (ESD protection) R IN + V bb I V ESD- ZD I I IN I Z2 RI L o gic GND V Z1 7KHXVHRI(6']HQHUGLRGHVDVYROWDJHFODPS DW'&FRQGLWLRQVLVQRWUHFRPPHQGHG GND R GN D S ignal GND VZ1 =6.1V typ., VZ2=Vbb(AZ)=62V min., RI=3.5 kW typ., RGND=150W Reverse battery protection Internal output pull down - V bb V bb Logic IN RI OUT Power Inverse Diode V OUT GND Signal GND R RL R GND O Power GND RGND=150W, RI=3.5kW typ., Temperature protection is not active during inverse current S ign al G N D RO = 200 kW typ. Page 7 2000-03-07 BSP 752 T Vbb disconnect with charged inductive load GND disconnect Vbb Vbb IN high OUT PROFET IN GND V bb V PROFET OUT GND V GND IN V bb GND disconnect with GND pull up Inductive Load switch-off energy dissipation Vbb IN PROFET OUT E bb E AS GND E Load Vbb V bb V IN V GND IN PROFET OUT L = GND ZL ^ R EL ER L Energy stored in load inductance: EL = ½ * L * IL2 While demagnetizing load inductance, the enérgy dissipated in PROFET is E AS = Ebb + EL - ER = ò VON(CL) * iL(t) dt, with an approximate solution for RL > 0W: E AS = Page 8 IL * R L IL * L ) * ( V b b + | V O U T ( C L )| ) * ln (1 + | V O U T ( C L )| 2 * RL 2000-03-07 BSP 752 T Typ. transient thermal impedance Typ. transient thermal impedance Z thJA=f(tp) @ 6cm 2 heatsink area ZthJC=f(tp ) @ min. footprint Parameter: D=tp/T Parameter: D=tp/T 10 2 10 2 D=0.5 K/W D=0.5 K/W D=0.2 D=0.2 10 1 D=0.1 10 1 D=0.05 ZthJA ZthJA D=0.05 D=0.02 10 0 D=0.1 D=0.02 10 0 D=0.01 D=0.01 10 -1 D=0 10 -1 D=0 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 s 10 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 4 tp 10 V Vbb 50 tp Typ. on-state resistance Typ. on-state resistance RON = f(Tj) ; Vbb = 13,5V ; V in = high RON = f(Vbb ); IL = 1 A ; Vin = high 300 400 mW mW 150°C 300 200 RON RON s 150 250 200 25°C 150 100 -40°C 100 50 50 0 -40 -20 0 20 40 60 80 100 120 °C Tj 0 0 160 Page 9 5 10 15 20 25 30 35 40 2000-03-07 4 BSP 752 T Typ. turn off time Typ. turn on time toff = f(Tj); RL = 47W ton = f(Tj ); R L = 47W 160 160 µs µs 9V 120 13.5V 100 t off ton 120 100 9...42V 80 80 42V 60 60 40 40 20 20 0 -40 -20 0 20 40 60 80 100 120 °C Tj 0 -40 -20 160 Typ. slew rate on 0 20 40 60 80 100 120 °C Tj 160 Typ. slew rate off dV/dton = f(Tj ) ; RL = 47 W dV/dtoff = f(Tj); RL = 47 W 2.0 3.5 V/µs V/µs -dV dtoff dV dton 1.6 1.4 1.2 2.5 2.0 1.0 42V 1.5 0.8 42V 0.6 1.0 13.5V 0.4 9V 0.5 160 0.0 -40 -20 13.5V 9V 0.2 0.0 -40 -20 0 20 40 60 80 100 120 °C Tj Page 10 0 20 40 60 80 100 120 °C Tj 160 2000-03-07 BSP 752 T Typ. standby current Typ. leakage current Ibb(off) = f(Tj ) ; Vbb = 42V ; VIN = low IL(off) = f(Tj) ; Vbb = 42V ; VIN = low 10 2.5 µA IL(off) Ibb(off) µA 6 1.5 4 1.0 2 0.5 0 -40 -20 0 20 40 60 80 100 120 °C Tj 0.0 -40 -20 160 0 20 40 60 80 100 120 °C Tj 160 Typ. initial peak short circuit current limit Typ. initial short circuit shutdown time IL(SCp) = f(Vbb) toff(SC) = f(Tj,start ) ; Vbb = 20V 4.0 10 ms A 3.0 toff(SC) IL(SCp) -40°C 25°C 150°C 6 2.5 2.0 4 1.5 1.0 2 0.5 0 0 10 20 30 40 0.0 -40 -20 60 V Vbb Page 11 0 20 40 60 80 100 120 °C Tj 160 2000-03-07 BSP 752 T Typ. input current Typ. input current IIN(on/off) = f(Tj); V bb = 13,5V; VIN = low/high IIN = f(VIN); Vbb = 13.5V VINlow £ 0,7V; VINhigh = 5V 50 12 µA µA -40...25°C 150°C I IN I IN 8 30 on 6 20 off 4 10 2 0 -40 -20 0 20 40 60 80 100 120 °C Tj 0 0 160 1 2 3 4 5 Typ. input threshold voltage Typ. input threshold voltage VIN(th) = f(Tj ) ; Vbb = 13,5V VIN(th) = f(Vbb) ; Tj = 25°C 2.0 8 V on on 1.6 1.6 off 1.4 1.2 VIN(th) VIN(th) V VIN 2.0 V 1.4 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 20 40 60 80 100 120 °C Tj 0.0 0 160 off 1.2 1.0 0.0 -40 -20 6 10 20 30 50 V Vbb Page 12 2000-03-07 BSP 752 T Maximum allowable load inductance Maximum allowable inductive switch-off for a single switch off energy, single pulse L = f(I L); T jstart=150°C, RL=0W EAS = f(IL ); Tjstart = 150°C, Vbb = 13,5V 2000 1800 mH mJ 1600 1400 EAS L 1400 1200 1200 1000 1000 800 800 600 600 42V 400 400 13,5V 200 200 0 0.0 0.2 0.5 0.8 1.0 0 0.0 1.5 A IL 0.2 0.5 0.8 1.0 1.5 A IL Page 13 2000-03-07 BSP 752 T Timing diagrams Figure 2b: Switching a lamp, Figure 1a: Vbb turn on: IN IN OUT V bb I V L OUT t t Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition Figure 2c: Switching an inductive load IN IN V V OUT OUT 90% t on d V /d to n d V /d to f f t o ff 10% I IL L t t Page 14 2000-03-07 BSP 752 T Figure 5: Undervoltage restart of charge pump Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling Von IN t I L Vbb( ucp) I L(SCp) I Vbb( under ) L(SCr) Vbb tm t off(SC) t +HDWLQJXSRIWKHFKLSPD\UHTXLUHVHYHUDOPLOOLVHFRQGVGHSHQGLQJ RQH[WHUQDOFRQGLWLRQV Figure 4: Overtemperature: Reset if Tj < T jt IN V OUT T J t Page 15 2000-03-07 BSP 752 T Package and ordering code all dimensions in mm Ordering code: Q67060-S7307 Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm 2 active heatsink area ) as a reference for max. power dissipation Ptot nominal load current IL(nom) and thermal resistance R thja Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 16 2000-03-07