SMBT3904U NPN Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3906U (PNP) 1 C1 B2 E2 6 5 4 VPW09197 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type Marking SMBT3904U s1A Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Value Unit Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 60 Emitter-base voltage VEBO 6 DC collector current IC 200 mA Total power dissipation, TS = 105 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 135 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBT3904U Electrical Characteristics at TA =25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 40 - - V(BR)CBO 60 - - V(BR)EBO 6 - - ICBO - - 50 DC Characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current nA VCB = 30 V, IE = 0 DC current gain 1) - hFE IC = 100 µA, VCE = 1 V 40 - - IC = 1 mA, VCE = 1 V 70 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - - Collector-emitter saturation voltage1) V VCEsat IC = 10 mA, IB = 1 mA - - 0.2 IC = 50 mA, IB = 5 mA - - 0.3 IC = 10 mA, IB = 1 mA 0.65 - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 Base-emitter saturation voltage 1) VBEsat 1) Pulse test: t < 300s; D < 2% 2 Nov-30-2001 SMBT3904U Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. 300 - - MHz Ccb - - 4 pF Ceb - - 8 h11e 1 - 10 k h12e 0.5 - 8 10-4 h21e 100 - 400 - h22e 1 - 40 S F - - 5 dB td - - 35 ns tr - - 35 tstg - - 200 tf - - 50 AC Characteristics Transition frequency fT IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz Noise figure IC = 100 µA, VCE = 5 V, RS = 1 k, f = 1 kHz, f = 200 Hz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA Fall time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA 3 Nov-30-2001 SMBT3904U Test circuit Delay and rise time +3.0 V 300 ns 275 Ω D = 2% +10.9 V 0 10 k Ω C -0.5 V <4.0 pF <1.0 ns EHN00061 Storage time and fall time +3.0 V t1 10 < t 1 < 500 µs D = 2% 275 Ω +10.9 V 0 -9.1 V 10 kΩ C <4.0 pF 1N916 <1.0 ns EHN00062 4 Nov-30-2001 SMBT3904U Total power dissipation Ptot = f (TS ) 400 mW P tot 300 250 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax / PtotDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Nov-30-2001 SMBT3904U DC current gain hFE = f (IC ) Saturation voltage IC = f (VBEsat, VCEsat) VCE = 10V, normalized h FE = 10 EHP00765 10 1 h FE ΙC 5 EHP00756 2 mA 10 2 5 125 C V BE V CE 25 C 10 0 10 1 -55 C 5 5 10 -1 10 -1 5 10 0 5 10 1 10 0 mA 10 2 2 0 0.2 0.4 0.6 ΙC 0.8 1.0 V 1.2 V BE sat , V CE sat Short-circuit forward current Open-circuit output admittance transfer ratio h21e = f(IC) h 22e = f (IC) VCE = 10V, f = 1MHz VCE = 10V, f = 1MHz EHP00759 10 3 EHP00760 10 2 µs h 21e h 22e 5 5 10 2 10 1 5 5 10 1 -1 10 5 10 0 mA 10 10 0 -1 10 1 ΙC 6 5 10 0 mA ΙC 10 1 Nov-30-2001 SMBT3904U Delay time td = f (IC ) Storage time t stg = f(IC) Rise time tr = f (IC) EHP00761 10 3 EHP00762 10 3 ns ns t r ,t d ts tr td 25 C 125 C h FE = 10 10 2 h FE = 20 10 10 2 VCC = 3 V h FE = 20 10 40 V 15 V 10 1 10 1 V BE = 2 V 0V 10 0 0 10 5 10 1 5 10 2 mA 10 10 0 0 10 3 5 10 1 5 10 2 mA 10 3 ΙC ΙC Fall time tf = f (IC) Rise time tr = f (IC) EHP00763 10 3 EHP00764 10 3 ns ns tr tf 25 C 125 C 25 C VCC = 40 V 10 2 10 2 VCC = 40 V h FE = 10 125 C h FE = 20 10 1 10 0 0 10 h FE = 10 5 10 1 10 1 5 10 2 mA 10 10 0 0 10 3 5 10 1 5 10 2 mA 10 3 ΙC ΙC 7 Nov-30-2001 SMBT3904U Input impedance Open-circuit reverse voltage h11e = f (IC ) transfer ratio h12e = f (I C) VCE = 10V, f = 1kHz VCE = 10V, f = 1kHz EHP00757 10 2 h 11e kΩ EHP00758 10 -3 h 12e 10 1 5 10 -4 5 10 0 5 10 -1 10 -1 5 10 0 mA 10 -5 10 1 10 -1 5 10 0 mA 10 1 ΙC ΙC 8 Nov-30-2001