INFINEON TDA21106

CoreControl TM
Data Sheet
TDA21106
High speed Driver with bootstrapping for
dual Power MOSFETs
P-DSO-8
Features
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Fast rise and fall times for frequencies up to 2 MHz
Capable of sinking more than 4A peak currents for lowest switching losses
Charges High Side MOSFET gate drive voltage from 6 to 12V according to PVCC
setting; Low Side MOSFET at 12 V.
Adjustable High Side MOSFET gate drive voltage via PVCC pin for optimizing ON
losses and gate drive losses
Integrates the bootstrap diode for reducing the part count
Prevents from cross-conducting by adaptive gate drive control
High voltage rating on Phase node
Supports shut-down mode for very low quiescent current through three-state input
Compatible to standard PWM controller ICs (Intersil, Analog Devices)
Floating High Side MOSFET drive
Footprint compatible to TDA21101G and HIP6601B
Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s
Type
TDA21106
Package
P-DSO-8
Ordering Code
Q67042-S4223
Number Name
1
GATEHS
Pinout
Top View
GATEHS 1
8
PHASE
BOOT
2
7
PVCC
PWM
3
6
VCC
GND
4
5
GATELS
Rev 2.0
Marking
21106
2
BOOT
3
4
5
PWM
GND
GATELS
6
7
VCC
PVCC
8
PHASE
Page 1
Description
Gate drive output for the N-Channel
High side MOSFET
Floating bootstrap pin. To be
connected to the external bootstrap
capacitor to generate the gate drive
voltage for the high side N-Channel
MOSFET
Input for the PWM controller signal
Ground
Gate drive output for the N-Channel
Low Side MOSFET
Supply voltage
Input to adjust the High Side gate
drive
To be connected to the junction of
the High Side and the Low Side
MOSFET
Apr, 2004
CoreControl TM
Data Sheet
TDA21106
General Description
The dual high speed driver is designed to drive a wide range of N-Channel low side
and N-Channel high side MOSFETs with varying gate charges. It has a small
propagation delay from input to output, short rise and fall times and the same pin
configuration to be compatible to TDA21101G and HIP6601B. In addition it provides
protection features as well as a three-state mode for efficiency reasons. The high
breakdown voltage makes it suitable for mobile applications.
Target application
The dual high speed driver is designed to work well in half-bridge type circuits where
dual N-Channel MOSFETs are utilized. A circuit designer can fully take advantage of
the driver´s capabilities in high-efficiency, high-density synchronous DC/DC
converters that operate at high switching frequencies, e.g. in multi-phase converters
for CPU supplies on motherboards and VRM´s but also in motor drive and class-D
amplifier type applications.
Absolute Maximum Ratings
At Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Min. Max.
Voltage supplied to ‘VCC’ pin; DC
Voltage supplied to ‘PVCC’ pin; DC
Voltage supplied to ‘PWM’ pin
Voltage supplied to ‘BOOT’ pin referenced to ‘PHASE’
VVCC
VPVCC
VPWM
VBOOT –
VPHASE
VBOOT
VPHASE
VPHASE
-0.3
-0.3
-0.3
-0,3
25
25
5,5
25
-0,3
-1
-20
45
25
30
VGATEHS
-3.5
Voltage supplied to ‘BOOT’ pin referenced to ‘GND’
Voltage rating at ‘PHASE’ pin, DC
Voltage rating at ‘PHASE’ pin, tpulse_max = 500ns
Max Duty Cycle = 2%
Voltage supplied to GATEHS pin referenced to ‘PHASE’
Tpulse_max < 100ns, Energy < 2uJ
Voltage supplied to GATELS pin referenced to ‘GND’
Tpulse_max < 100ns, Energy < 2uJ
Junction temperature
Storage temperature
ESD Rating; Human Body Model
IEC climatic category; DIN EN 60068-1
Rev 2.0
Page 2
VGATELS
TJ
TS
VBOOT
+0.3
-5
VVCC
+0.3
-25
150
-55
150
4
55/150/56
Unit
V
°C
KV
-
Apr, 2004
CoreControl TM
Data Sheet
TDA21106
Thermal Characteristic
Parameter
Symbol
Thermal resistance, junction-soldering point
Thermal resistance, junction-ambient
Values
Unit
Min. Typ. Max.
95
K/W
125
Operating Conditions
At Tj = 25 °C, unless otherwise specified
Parameter
Voltage supplied to
‘VCC’ pins
Voltage supplied to
‘PVCC’ pins
Input signal transition
frequency
Power dissipation
Junction temperature
Symbol
Conditions
Unit
Values
Min. Typ. Max.
VVCC
10.8
13.2
V
VPVCC
6
13.2
V
f
0.1
2
MHz
150
W
°C
PTOT
TJ
TA = 25 °C, TJ = 125 °C
0.8
-25
Electrical Characteristic
At Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Supply Characteristic
Quiescent current
IPVCC+IVCCQ
VCC supply current
IVCC
PVCC supply current
Under-voltage
lockout
Under-voltage
lockout
Input Characteristic
Current in ‘PWM’ pin
Current in ‘PWM’ pin
Shut down window
Shut down hold-off
time
PWM pin open
PWM Low level
PWM High level
Pulse width High
Side
Rev 2.0
IPVCC
IPWM_L
IPWM_H
VIN_SHUT
t_SHUT
VPWM_O
VPWM_L
VPWM_H
t_P
Conditions
1.8 V ≤ VPWM ≤ 3.0 V
f =1 MHz,
VPVCC = VVCC = 12 V
No load
f =1 MHz,
VPVCC = VVCC = 12 V
No load
VVCC rising threshold
Unit
Values
Min. Typ. Max.
1,3.
3
5
8
6
8.5
9.7
10.1
10.5
VVCC falling threshold
7.3
7.6
8.0
V_PWM = 0.4 V
V_PWM = 4.5 V
t_SHUT > 300 ns
1.6 V ≤ VPWM ≤ 3.2 V
-80
120
1.7
100
1.8
-115 -150
180 250
3.1
190 300
2.0
2.2
1.4
3.7
= Pulse width on PWM
pin
Page 3
40
Apr, 2004
mA
V
µA
V
ns
V
ns
CoreControl TM
Data Sheet
TDA21106
At Tj = 25 °C, unless otherwise specified
Dynamic Characteristic
Turn-on propagation
td(ON)_HS
Delay High Side
Turn-off propagation td(OFF)_HS
delay High Side
Rise time High Side
tr_HS
Fall time High Side
tf_HS
Turn-on propagation
td(ON)_LS
Delay Low Side
Turn-off propagation
td(OFF)_LS
delay Low Side
Rise time Low Side
tr_LS
Fall time Low Side
tf_LS
PPVCC = VVCC= 12 V
CISS = 3000 pF
20
35
15
25
20
15
15
33
25
27
10
20
20
15
33
25
ns
At Tj = 125 °C, unless otherwise specified
Dynamic Characteristic
Turn-on propagation
td(ON)_HS
Delay High Side
Turn-off propagation td(OFF)_HS
delay High Side
Rise time High Side
tr_HS
Fall time High Side
tf_HS
Turn-on propagation
td(ON)_LS
Delay Low Side
Turn-off propagation
td(OFF)_LS
delay Low Side
Rise time Low Side
tr_LS
Fall time Low Side
tf_LS
Rev 2.0
25
18
PPVCC = VVCC= 12 V
CISS = 3000 pF
24
22
18
ns
15
21
19
Page 4
Apr, 2004
CoreControl TM
Data Sheet
TDA21106
Timing diagram
~5V
1 1V V
tr LS
tf LS
At Tj = 25 °C, unless otherwise specified
Parameter
Unit
Values
Min. Typ. Max.
Output Characteristic High Side (HS) and Low Side (LS), ensured by design
Output
HS; Source
VPVCC = VVCC= 12 V
Resistance
I_HS_SRC = 2 A
1 (1)
Ω
HS; Sink
VPVCC = VVCC= 12 V
0.9
1.3
Ω
LS; Source
VPVCC = VVCC= 12 V
1.4 (2)
I_HS_SRC = 2 A
Ω
LS; Sink
VPVCC = VVCC= 12 V
0.9
1.3
Ω
VPVCC = VVCC= 12 V
HS; Source
4
A
Peak outputt_P_HS / Pulse < 20 ns
HS; Sink
4
current
t_
/
Pulse
<
40
ns
LS; Source
4
P_LS
LS; Sink
4
1
Incremental resistance VBOOT-VGATEHS=4.3V @ ISOURCE=2A
2
Incremental resistance VVCC –VGATELS=4.4V @ ISOURCE=2A
Rev 2.0
Conditions
Page 5
Apr, 2004
CoreControl TM
Data Sheet
TDA21106
Package Drawing P-DSO-8-3
Footprint Drawing P-DSO-8-3
e
1,27 mm
Rev 2.0
A
5,69 mm
L
1,31 mm
Page 6
B
0,65 mm
Apr, 2004
CoreControl TM
Data Sheet
TDA21106
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
 Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your
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worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system Life support devices or systems are intended to be implanted in
the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is
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Rev 2.0
Page 7
Apr, 2004