APTGF50DA120CT1G VCES = 1200V IC = 50A @ Tc = 80°C Boost chopper NPT IGBT SiC Chopper diode Application 5 6 • • • 11 CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features 3 4 Q2 • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Low leakage current - RBSOA and SCSOA rated • Chopper SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • Very low stray inductance Internal thermistor for temperature monitoring High level of integration NTC CR2 9 10 1 2 12 Benefits • • • • Pins 1/2 ; 3/4 ; 5/6 must be shorted together • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Absolute maximum ratings ICM VGE PD RBSOA Tc = 25°C Tc = 80°C Tc = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tj = 150°C Max ratings 1200 75 50 150 ±20 312 100A @ 1200V Unit V September, 2009 IC Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTGF50DA120CT1G – Rev 0 Symbol VCES APTGF50DA120CT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V Tj = 25°C VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 3.2 4.0 4.5 Max 250 500 3.7 Unit 6.5 100 V nA Max Unit µA V Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time VGS = 15V VBus = 600V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 5 Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C RG = 5 Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Typ 3450 330 220 330 35 200 35 pF nC 65 ns 320 30 35 65 ns 360 40 4.2 mJ 3.05 300 A Chopper SiC diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance VR=1200V Min 1200 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C IF = 20A, VR = 600V di/dt =1000A/µs IF = 20A Typ Max 64 112 20 1.6 2.3 400 2000 80 f = 1MHz, VR = 200V 192 f = 1MHz, VR = 400V 138 www.microsemi.com Unit V µA September, 2009 IRM Test Conditions A 1.8 3 V nC pF 2–7 APTGF50DA120CT1G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGF50DA120CT1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT SiC Chopper Diode To heatsink M4 4000 -40 -40 -40 2.5 Max 0.4 1 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = Typ 50 5 3952 4 Max Unit kΩ % K % R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦⎥ ⎣⎢ See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTGF50DA120CT1G – Rev 0 September, 2009 SP1 Package outline (dimensions in mm) APTGF50DA120CT1G Typical IGBT Performance Curve Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 80 60 TJ=25°C TJ=125°C 40 20 TJ=25°C 30 20 TJ=125°C 10 1 2 3 4 5 VCE, Collector to Emitter Voltage (V) 0 6 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge VGE, Gate to Emitter Voltage (V) Transfer Characteristics 100 250µs Pulse Test < 0.5% Duty cycle 75 50 TJ=125°C 25 TJ=25°C 0 0 4 2 4 6 8 10 VGE, Gate to Emitter Voltage (V) 18 VCE=240V IC = 50A TJ = 25°C 16 14 VCE=600V 12 10 VCE=960V 8 6 4 2 0 0 12 50 100 150 200 250 300 350 Gate Charge (nC) Breakdown Voltage vs Junction Temp. 70 Ic, DC Collector Current (A) 1.15 1.10 1.05 1.00 0.95 DC Collector Current vs Case Temperature 60 50 40 30 20 10 0 50 75 100 125 TJ, Junction Temperature (°C) 25 50 75 100 125 TC, Case Temperature (°C) 150 September, 2009 25 www.microsemi.com 4–7 APTGF50DA120CT1G – Rev 0 0 Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle 0 0 Collector to Emitter Breakdown Voltage (Normalized) Output Characteristics (VGE=10V) 40 Ic, Collector Current (A) Ic, Collector Current (A) 100 APTGF50DA120CT1G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VCE = 600V RG = 5Ω 40 VGE = 15V 35 30 25 0 25 50 75 100 400 VGE=15V, TJ=125°C 350 300 VGE=15V, TJ=25°C 250 VCE = 600V RG = 5Ω 200 125 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 600V RG = 5Ω 140 100 125 45 tf, Fall Time (ns) 100 VGE=15V 60 TJ = 125°C 40 35 30 TJ = 25°C 20 VCE = 600V, VGE = 15V, RG = 5Ω 20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125 0 12 Eoff, Turn-off Energy Loss (mJ) VCE = 600V RG = 5Ω 14 TJ=125°C, VGE=15V 10 8 TJ=25°C, VGE=15V 6 4 2 0 0 25 50 75 100 ICE, Collector to Emitter Current (A) Eon, 50A Eoff, 50A Eoff, 25A Eon, 25A 2 Eoff, 25A 0 6 TJ = 125°C 4 TJ = 25°C 2 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125 Switching Energy Losses vs Junction Temp. 5 6 4 VCE = 600V VGE = 15V RG = 5Ω 0 Switching Energy Losses (mJ) 8 8 125 Switching Energy Losses vs Gate Resistance 10 VCE = 600V VGE = 15V TJ= 125°C 125 Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 16 25 50 75 100 ICE, Collector to Emitter Current (A) VCE = 600V VGE = 15V RG = 5Ω 4 Eon, 50A September, 2009 tr, Rise Time (ns) 75 Current Fall Time vs Collector Current 25 Eon, Turn-On Energy Loss (mJ) 50 50 180 Switching Energy Losses (mJ) 25 ICE, Collector to Emitter Current (A) Eoff, 50A 3 Eon, 25A 2 1 Eoff, 25A 0 0 10 20 30 40 Gate Resistance (Ohms) 50 www.microsemi.com 25 50 75 100 TJ, Junction Temperature (°C) 125 5–7 APTGF50DA120CT1G – Rev 0 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 45 APTGF50DA120CT1G IC, Collector Current (A) Cies 1000 Coes 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 80 60 40 20 0 50 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 0.4 100 Cres 100 0.9 0.35 0.3 0.25 0.7 0.5 0.2 0.3 0.1 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 120 ZVS 80 60 ZCS 40 20 Hard switching 0 10 www.microsemi.com VCE = 600V D = 50% RG = 5Ω TJ = 125°C TC= 75°C 100 20 30 40 50 IC, Collector Current (A) 60 September, 2009 0.15 6–7 APTGF50DA120CT1G – Rev 0 Thermal Impedance (°C/W) Reverse Bias Safe Operating Area 120 Fmax, Operating Frequency (kHz) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 APTGF50DA120CT1G Typical SiC chopper diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 200 30 TJ=75°C 20 TJ=125°C 10 TJ=175°C IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 150 100 TJ=75°C TJ=125°C 50 TJ=175°C 0 400 600 800 TJ=25°C 1000 1200 1400 1600 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage 1200 1000 800 600 400 September, 2009 200 0 1 10 100 VR Reverse Voltage 1000 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTGF50DA120CT1G – Rev 0 C, Capacitance (pF) 1400