APTGF180SK60TG Buck chopper NPT IGBT Power Module VBUS NT C2 VCES = 600V IC = 180A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies Q1 OUT 0/VBU S SENSE 0/VBU S 0/VBUS SENSE VBUS E1 G1 0/VBUS 0/VBUS SENSE NT C1 OUT OUT NTC2 NTC1 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 600 220 180 630 ±20 833 400A @ 600V Unit V July, 2006 E1 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF180SK60TG – Rev 2 G1 APTGF180SK60TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Eon Turn-on Switching Energy Eoff Min Turn-off Switching Energy Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 3 Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 180A R G = 2.5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 180A R G = 2.5 Ω VGE = 15V Tj = 125°C VBus = 400V IC = 180A Tj = 125°C R G = 2.5 Ω Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Test Conditions VR=600V IF = 200A IF = 400A IF = 200A IF = 200A VR = 400V di/dt =400A/µs www.microsemi.com Typ 8.6 0.94 0.8 660 580 400 26 25 150 Max 300 1000 2.5 Unit 5 ±200 V nA Max Unit µA V nF nC ns 30 26 25 170 ns 40 8.6 mJ 7 Min 600 Tj = 25°C Tj = 125°C Tc = 80°C Typ 2.0 2.2 VGS = 15V VBus = 300V IC = 180A Fall Time Tf Min Typ Max 350 750 Tj = 125°C 200 1.6 1.9 1.4 Tj = 25°C 180 Tj = 125°C 220 Tj = 25°C 780 Tj = 125°C 2900 Unit V µA A 1.8 V July, 2006 ICES Test Conditions VGE = 0V Tj = 25°C VCE = 600V Tj = 125°C T VGE =15V j = 25°C IC = 180A Tj = 125°C VGE = VCE, IC = 2mA VGE = 20 V, VCE = 0V ns nC 2-6 APTGF180SK60TG – Rev 2 Symbol Characteristic APTGF180SK60TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To Heatsink M5 2500 -40 -40 -40 2.5 RT = Min R 25 Unit °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Max 0.15 0.32 Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF180SK60TG – Rev 2 July, 2006 SP4 Package outline (dimensions in mm) APTGF180SK60TG Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 250µs Pulse Test < 0.5% Duty cycle 500 600 TJ=-55°C TJ=25°C Ic, Collector Current (A) 400 300 TJ=125°C 200 100 250µs Pulse Test < 0.5% Duty cycle 500 400 TJ=25°C 300 200 TJ=125°C 100 0 0 0 1 2 3 0 4 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle 400 300 200 TJ=125°C 100 TJ=25°C TJ=-55°C 0 VCE, Collector to Emitter Voltage (V) 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) 6 Ic=360A 5 4 3 Ic=180A 2 Ic=90A 1 0 6 8 10 12 14 V CE =300V 12 10 V CE =480V 8 6 4 2 0 0 100 200 300 400 500 600 700 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 14 10 8 7 VCE=120V IC = 180A TJ = 25°C 16 On state Voltage vs Junction Temperature 4 3.5 Ic=360A 3 2.5 Ic=180A 2 1.5 Ic=90A 1 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 0.5 0 16 -50 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 300 Ic, DC Collector Current (A) 1.20 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 250 200 July, 2006 500 4 Gate Charge 18 VCE, Collector to Emitter Voltage (V) Ic, Collector Current (A) 600 Collector to Emitter Breakdown Voltage (Normalized) TJ=-55°C 150 100 50 0 125 TJ, Junction Temperature (°C) -50 -25 0 25 50 75 100 125 150 TC , Case Temperature (°C) www.microsemi.com 4-6 APTGF180SK60TG – Rev 2 Ic, Collector Current (A) 600 APTGF180SK60TG Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) 30 VGE = 15V 25 Tj = 25°C VCE = 400V RG = 2.5Ω 20 15 50 100 150 200 250 250 VGE=15V, TJ=125°C 200 150 100 50 300 50 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VGE=15V, TJ=125°C 20 250 300 60 TJ = 125°C 40 20 TJ = 25°C 0 100 150 200 250 ICE, Collector to Emitter Current (A) 50 300 Turn-On Energy Loss vs Collector Current VCE = 400V RG = 2.5Ω 12 Eoff, Turn-off Energy Loss (mJ) 16 T J=125°C, VGE=15V 8 TJ=25°C, VGE=15V 4 0 50 100 150 200 250 12 Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 2.5Ω 10 8 TJ = 25°C 4 2 50 Eoff, 360A Eoff, 180A 16 Eon, 180A Eoff, 90A 8 Eon, 90A 0 0 5 10 15 20 Gate Resistance (Ohms) 25 100 150 200 250 ICE, Collector to Emitter Current (A) 300 Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ) 24 Eon, 360A TJ = 125°C 6 ICE, Collector to Emitter Current (A) VCE = 400V VGE = 15V T J= 125°C 300 0 300 Switching Energy Losses vs Gate Resistance 32 100 150 200 250 ICE, Collector to Emitter Current (A) 20 VCE = 400V Eon, 360A V GE = 15V RG = 2.5Ω 16 Eoff, 360A 12 July, 2006 50 Eon, Turn-On Energy Loss (mJ) 200 VCE = 400V, VGE = 15V, RG = 2.5Ω tf, Fall Time (ns) tr, Rise Time (ns) VCE = 400V R G = 2.5Ω 0 Switching Energy Losses (mJ) 150 Current Fall Time vs Collector Current 80 40 100 ICE, Collector to Emitter Current (A) 80 60 VGE=15V, TJ=25°C VCE = 400V RG = 2.5Ω Eon, 180A 8 Eoff, 180A 4 Eon, 90A Eoff, 90A 0 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 5-6 APTGF180SK60TG – Rev 2 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APTGF180SK60TG Capacitance vs Collector to Emitter Voltage Reverse Bias Safe Operating Area 450 IC, Collector Current (A) C, Capacitance (pF) 100000 Cies 10000 Coes 1000 Cres 400 350 300 250 200 150 100 50 0 100 0 10 20 30 40 0 50 200 400 600 800 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.9 0.7 0.5 0.3 0.04 0.02 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 180 150 120 ZCS VC E = 400V D = 50% R G = 2.5Ω TJ = 125°C Tc=75°C 90 60 ZVS 30 Hard switching 0 80 120 160 200 IC, Collector Current (A) 240 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF180SK60TG – Rev 2 July, 2006 40