APTGF50VDA60T3G Dual Boost Chopper NPT IGBT Power Module 13 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction (PFC) • Interleaved PFC 14 19 20 10 11 22 23 7 8 26 4 27 3 29 30 31 28 27 26 25 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 32 NTC 15 16 20 19 18 23 22 29 16 30 15 31 14 13 32 2 3 4 7 VCES = 600V IC = 50A @ Tc = 80°C 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS compliant Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 600 65 50 230 ±20 250 Tj = 125°C 100A @ 500V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V September, 2009 Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTGF50VDA60T3G – Rev 1 Symbol VCES APTGF50VDA60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Typ VGE = 0V VCE = 600V 1.7 2.0 2.2 4 Max 250 500 2.45 Unit µA V 6 400 V nA Max Unit Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGE = 15V VBus = 300V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω VGE = 15V Tj = 125°C VBus = 400V IC = 50A Tj = 125°C RG = 2.7Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Typ 2200 323 200 166 20 100 40 9 pF nC ns 120 12 42 10 ns 130 21 0.5 mJ 1 225 A Chopper diode ratings and characteristics IRM Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 600 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ VR=600V IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =200A/µs www.microsemi.com V Tj = 25°C Tj = 125°C Tc = 70°C Unit 250 500 Tj = 125°C 60 1.6 1.9 1.4 Tj = 25°C 130 Tj = 125°C Tj = 25°C 170 220 Tj = 125°C 920 µA September, 2009 VRRM Test Conditions A 1.8 V ns nC 2–6 APTGF50VDA60T3G – Rev 1 Symbol Characteristic APTGF50VDA60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min Typ 50 5 3952 4 Max Unit kΩ % K % Min Typ Max 0.5 0.9 Unit T25 = 298.15 K TC=100°C RT = R25 T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T ⎡ ⎛ 1 exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Chopper Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 4000 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 110 °C N.m g SP3 Package outline (dimensions in mm) 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGF50VDA60T3G – Rev 1 September, 2009 28 17 1 APTGF50VDA60T3G Typical IGBT Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 100 250µs Pulse Test < 0.5% Duty cycle Ic, Collector Current (A) 75 TJ=25°C TJ=125°C 50 25 0 250µs Pulse Test < 0.5% Duty cycle 75 TJ=25°C 50 TJ=125°C 25 0 0 1 2 3 4 0 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 100 75 50 TJ=125°C 25 TJ=25°C 0 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) VCE=120V IC = 50A TJ = 25°C 16 14 VCE=300V 12 VCE=480V 10 8 6 4 2 0 0 10 25 50 75 100 125 150 175 200 Gate Charge (nC) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 70 Ic, DC Collector Current (A) 1.20 1.10 1.00 0.90 0.80 25 50 75 100 125 TJ, Junction Temperature (°C) 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com September, 2009 125 Collector to Emitter Breakdown Voltage (Normalized) Gate Charge 18 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 150 4 4–6 APTGF50VDA60T3G – Rev 1 Ic, Collector Current (A) 100 APTGF50VDA60T3G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VGE = 15V 50 40 Tj = 125°C VCE = 400V RG = 2.7Ω 30 20 0 25 50 75 100 125 175 150 VGE=15V, TJ=125°C 125 100 75 50 150 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 400V RG = 2.7Ω tf, Fall Time (ns) tr, Rise Time (ns) VGE=15V, TJ=125°C 125 150 40 TJ = 125°C 30 20 TJ = 25°C 0 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 0 150 Turn-On Energy Loss vs Collector Current TJ=125°C, VGE=15V VCE = 400V RG = 2.7Ω 1.5 Eoff, Turn-off Energy Loss (mJ) 2 Eon, Turn-On Energy Loss (mJ) 100 10 10 1 0.5 0 0 25 50 75 100 125 2.5 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 2.7Ω 2 TJ = 125°C 1.5 1 0.5 0 150 0 ICE, Collector to Emitter Current (A) 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 3 120 Eon, 50A 2 1.5 Eoff, 50A 1 0.5 100 80 September, 2009 VCE = 400V VGE = 15V TJ= 125°C 2.5 IC, Collector Current (A) Switching Energy Losses (mJ) 75 VCE = 400V, VGE = 15V, RG = 2.7Ω 50 40 20 50 Current Fall Time vs Collector Current 60 30 25 ICE, Collector to Emitter Current (A) 60 50 VGE=15V, TJ=25°C VCE = 400V RG = 2.7Ω 60 40 20 Eon, 50A 0 0 0 5 10 15 20 Gate Resistance (Ohms) 25 0 200 400 600 VCE, Collector to Emitter Voltage (V) www.microsemi.com 5–6 APTGF50VDA60T3G – Rev 1 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 60 APTGF50VDA60T3G Capacitance vs Collector to Emitter Voltage Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) C, Capacitance (pF) 10000 Cies 1000 Coes Cres 100 0 10 20 30 40 50 240 VCE = 400V D = 50% RG = 2.7Ω TJ = 125°C TC= 75°C 200 160 120 80 ZCS ZVS hard switching 40 0 0 VCE, Collector to Emitter Voltage (V) 20 40 60 80 100 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTGF50VDA60T3G – Rev 1 September, 2009 0 0.00001