APTGF50DU120TG Dual common source NPT IGBT Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Q2 G1 G2 E1 E2 E NT C1 NT C2 G2 E2 C1 E C2 C2 E1 E2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 75 50 150 ±20 312 100A @ 1200V Unit V A July, 2006 Q1 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF50DU120TG – Rev 2 C2 C1 APTGF50DU120TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min trr Reverse Recovery Time Qrr Reverse Recovery Charge 4.5 Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 5 Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C RG = 5 Ω VR=1200V DC Forward Current Diode Forward Voltage 3.2 4.0 VGS = 15V VBus = 600V IC = 50A Test Conditions IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =400A/µs Typ 3450 330 220 330 35 200 35 Unit 6.5 100 V nA Max Unit µA V pF nC ns 320 30 35 65 ns 360 40 6.9 mJ 3.05 Typ Max 2500 500 Tj = 125°C 60 2.0 2.3 1.8 Tj = 25°C 370 Tj = 125°C 500 Tj = 25°C 1320 Tj = 125°C 6900 www.microsemi.com Max 250 500 3.7 65 Min 1200 Tj = 25°C Tj = 125°C Tc = 70°C Typ Unit V µA A 2.5 V July, 2006 ICES Test Conditions VGE = 0V Tj = 25°C VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V ns nC 2-6 APTGF50DU120TG – Rev 2 Symbol Characteristic APTGF50DU120TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To heatsink M5 2500 -40 -40 -40 2.5 RT = Min Unit °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Max 0.4 0.65 Typ 50 3952 Max °C N.m g Unit kΩ K R 25 T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF50DU120TG – Rev 2 July, 2006 SP4 Package outline (dimensions in mm) APTGF50DU120TG Typical Performance Curve Output characteristics (V GE=15V) 250µs Pulse Test < 0.5% Duty cycle T J=25°C 160 120 TJ=125°C 80 40 2 4 6 VCE, Collector to Emitter Voltage (V) T J=25°C 30 20 TJ =125°C 10 0 8 1 2 3 VCE, Collector to Emitter Voltage (V) VGE, Gate to Emitter Voltage (V) TJ=25°C 200 150 100 TJ=125°C 50 TJ=25°C 0 0 4 8 12 VGE, Gate to Emitter Voltage (V) 7 6 5 Ic=100A 3 2 Ic=25A 1 0 9 VCE=600V 12 10 VCE =960V 8 6 4 2 0 50 100 150 200 250 300 350 Gate Charge (nC) Ic=50A 4 14 0 VCE, Collector to Emitter Voltage (V) T J = 25°C 250µs Pulse Test < 0.5% Duty cycle 8 VCE =240V IC = 50A TJ = 25°C 16 16 On state Voltage vs Gate to Emitter Volt. 9 18 10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) On state Voltage vs Junction Temperature 6 3 1 0 90 1.15 80 Ic, DC Collector Current (A) 1.20 1.00 0.95 0.90 0.85 0.80 0.75 0.70 Ic=25A 2 -50 Breakdown Voltage vs Junction Temp. Ic=100A Ic=50A 4 16 1.10 1.05 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 5 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 70 60 July, 2006 250µs Pulse Test < 0.5% Duty cycle 250 4 Gate Charge Transfer Characteristics 300 Ic, Collector Current (A) 40 50 40 30 20 10 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 -50 www.microsemi.com -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 4-6 APTGF50DU120TG – Rev 2 0 VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle 0 0 Collector to Emitter Breakdown Voltage (Normalized) Output Characteristics (VGE=10V) 50 Ic, Collector Current (A) Ic, Collector Current (A) 200 APTGF50DU120TG Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 45 VCE = 600V R G = 5Ω 40 VGE = 15V 35 30 25 0 25 50 75 100 400 VGE=15V, TJ=125°C 350 300 VGE=15V, TJ=25°C 250 VCE = 600V RG = 5Ω 200 125 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 50 75 100 125 Current Fall Time vs Collector Current 50 180 VCE = 600V RG = 5Ω 140 tf, Fall Time (ns) tr, Rise Time (ns) 25 ICE, Collector to Emitter Current (A) 100 VGE=15V 60 TJ = 125°C 40 30 TJ = 25°C VCE = 600V, VGE = 15V, R G = 5Ω 20 20 125 TJ=125°C, VGE=15V 20 16 12 TJ=25°C, VGE =15V 8 4 0 25 50 75 100 ICE, Collector to Emitter Current (A) 12 Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 6 Eoff, 25A 0 TJ = 125°C 4 TJ = 25°C 2 0 0 Switching Energy Losses (mJ) 14 VCE = 600V VGE = 15V R G = 5Ω 25 50 75 100 ICE, Collector to Emitter Current (A) 125 Switching Energy Losses vs Junction Temp. 8 VCE = 600V VGE = 15V TJ= 125°C 16 8 125 Switching Energy Losses vs Gate Resistance 18 125 VCE = 600V VGE = 15V RG = 5Ω 6 Eon, 50A July, 2006 VCE = 600V R G = 5Ω 24 25 50 75 100 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 28 0 Switching Energy Losses (mJ) 0 4 Eoff, 50A Eon, 25A 2 Eoff, 25A 0 0 10 20 30 40 Gate Resistance (Ohms) 50 0 www.microsemi.com 25 50 75 100 TJ, Junction Temperature (°C) 125 5-6 APTGF50DU120TG – Rev 2 25 50 75 100 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 0 APTGF50DU120TG Cies 1000 Coes 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 80 60 40 20 0 50 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 0.4 100 Cres 100 Thermal Impedance (°C/W) Reverse Bias Safe Operating Area 120 IC , Collector Current (A) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 0.9 0.35 0.3 0.25 0.7 0.5 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 100 80 ZVS VCE = 600V D = 50% RG = 5Ω TJ = 125°C TC= 75°C 60 ZCS 40 20 Hard switching 0 20 30 40 50 IC, Collector Current (A) 60 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF50DU120TG – Rev 2 July, 2006 10