MICROSEMI APTGF90A60T1G

APTGF90A60T1G
Phase leg
NPT IGBT Power Module
5
6
Q1
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
11
CR1
7
8
3
4
Q2
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
NTC
CR2
9
10
1
2
VCES = 600V
IC = 90A @ Tc = 80°C
12
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Tc = 25°C
Max ratings
600
110
90
315
±20
416
Tj = 150°C
200A @ 600V
Tc = 25°C
Tc = 80°C
Tc = 25°C
Reverse Bias Safe Operating Area
Unit
V
A
August, 2007
Parameter
Collector - Emitter Breakdown Voltage
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTGF90A60T1G – Rev 0
Symbol
VCES
APTGF90A60T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Tj = 25°C
VGE = 0V
VCE = 600V
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 90A
Tj = 125°C
VGE = VCE, IC = 1mA
VGE = 20 V, VCE = 0V
Min
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Typ
2.0
2.2
3
Max
250
500
2.5
Unit
5
±150
V
nA
Max
Unit
µA
V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
VGE = 15V
VBus = 300V
IC = 90A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω
VGE = 15V
Tj = 125°C
VBus = 400V
IC = 90A
Tj = 125°C
RG = 5 Ω
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Typ
4300
470
400
330
290
200
26
25
150
pF
nC
ns
30
26
25
ns
170
40
4.3
mJ
3.5
Reverse diode ratings and characteristics
IRM
IF
VF
Min
VR=600V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
600
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
IF = 60A
VR = 400V
di/dt =400A/µs
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V
Tj = 25°C
Tj = 125°C
Tc = 80°C
IF = 60A
IF = 120A
IF = 60A
Unit
35
600
Tj = 125°C
60
1.8
2.2
1.5
Tj = 25°C
25
Tj = 125°C
Tj = 25°C
160
70
Tj = 125°C
960
µA
A
2.2
August, 2007
VRRM
Test Conditions
V
ns
nC
2–6
APTGF90A60T1G – Rev 0
Symbol Characteristic
APTGF90A60T1G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
IGBT
Diode
To heatsink
M4
2500
-40
-40
-40
2.5
Max
0.3
0.65
Unit
°C/W
V
150
125
100
4.7
80
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
Min
Typ
50
3952
Max
Unit
kΩ
K
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
exp  B25 / 85 
− 
 T25 T 

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTGF90A60T1G – Rev 0
August, 2007
SP1 Package outline (dimensions in mm)
APTGF90A60T1G
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
250
250µs Pulse Test
< 0.5% Duty cycle
200
Ic, Collector Current (A)
TJ=25°C
150
TJ=125°C
100
50
250µs Pulse Test
< 0.5% Duty cycle
200
TJ=25°C
150
100
TJ=125°C
50
0
0
0
1
2
3
VCE, Collector to Emitter Voltage (V)
0
4
1
Transfer Characteristics
250µs Pulse Test
< 0.5% Duty cycle
150
100
50
TJ=125°C
TJ=25°C
0
1
2 3 4 5 6 7 8 9
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
8
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=180A
5
4
3
Ic=90A
2
Ic=45A
1
0
6
8
10
12
14
VGE, Gate to Emitter Voltage (V)
14
VCE=300V
12
10
VCE=480V
8
6
4
2
0
0
50
100 150 200 250
Gate Charge (nC)
300
350
On state Voltage vs Junction Temperature
4
3.5
Ic=180A
3
2.5
Ic=90A
2
Ic=45A
1.5
1
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
16
25
50
75
100
125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
120
1.20
Ic, DC Collector Current (A)
Collector to Emitter Breakdown
Voltage (Normalized)
VCE=120V
IC = 90A
TJ = 25°C
16
10
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
0
4
1.10
1.00
0.90
0.80
25
50
75
100
125
TJ, Junction Temperature (°C)
100
80
August, 2007
200
3
Gate Charge
18
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
250
2
VCE, Collector to Emitter Voltage (V)
60
40
20
0
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–6
APTGF90A60T1G – Rev 0
Ic, Collector Current (A)
250
APTGF90A60T1G
Turn-Off Delay Time vs Collector Current
VGE = 15V
30
25
Tj = 25°C
VCE = 400V
RG = 5Ω
20
15
25
50
75
100
125
150
td(off), Turn-Off Delay Time (ns)
250
VGE=15V,
TJ=125°C
200
150
100
50
25
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
100
125
150
VCE = 400V, VGE = 15V, RG = 5Ω
VGE=15V,
TJ=125°C
tf, Fall Time (ns)
40
20
60
TJ = 125°C
40
20
TJ = 25°C
0
50
75
100
125
ICE, Collector to Emitter Current (A)
150
25
Turn-On Energy Loss vs Collector Current
Eoff, Turn-off Energy Loss (mJ)
8
VCE = 400V
RG = 5Ω
6
TJ=125°C,
VGE=15V
4
TJ=25°C,
VGE=15V
2
0
0
25
50
75
100
125
6
VCE = 400V
VGE = 15V
RG = 5Ω
5
4
TJ = 25°C
2
1
0
0
25
Eoff, 90A
Eoff, 45A
4
Eon, 45A
0
10
20
30
40
75
100
125
150
Switching Energy Losses vs Junction Temp.
Switching Energy Losses (mJ)
Eoff, 180A
Eon, 90A
0
50
ICE, Collector to Emitter Current (A)
Eon, 180A
8
TJ = 125°C
3
150
Switching Energy Losses vs Gate Resistance
16
12
150
Turn-Off Energy Loss vs Collector Current
ICE, Collector to Emitter Current (A)
VCE = 400V
VGE = 15V
TJ= 125°C
50
75
100
125
ICE, Collector to Emitter Current (A)
50
Gate Resistance (Ohms)
10
VCE = 400V
VGE = 15V
RG = 5Ω
8
Eon, 180A
Eoff, 180A
6
August, 2007
tr, Rise Time (ns)
VCE = 400V
RG = 5Ω
25
Eon, Turn-On Energy Loss (mJ)
75
Current Fall Time vs Collector Current
80
0
Switching Energy Losses (mJ)
50
ICE, Collector to Emitter Current (A)
80
60
VGE=15V,
TJ=25°C
VCE = 400V
RG = 5Ω
Eon, 90A
4
Eoff, 90A
2
Eoff, 45A
Eon, 45A
0
25
50
75
100
125
TJ, Junction Temperature (°C)
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5–6
APTGF90A60T1G – Rev 0
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
35
APTGF90A60T1G
Capacitance vs Collector to Emitter Voltage
Reverse Bias Safe Operating Area
10000
250
IC, Collector Current (A)
C, Capacitance (pF)
Cies
1000
Coes
Cres
100
200
150
100
50
0
0
10
20
30
40
50
0
VCE, Collector to Emitter Voltage (V)
200
400
600
800
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.25
0.9
0.7
0.2
0.15
0.1
0.5
0.3
0.1
0.05
0
0.00001
0.05
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
Fmax, Operating Frequency (kHz)
Thermal Impedance (°C/W)
0.35
200
1
10
Operating Frequency vs Collector Current
ZVS
160
120
ZCS
VCE = 400V
D = 50%
RG = 5Ω
TJ = 125°C
TC = 75°C
80
40
Hard
switching
0
40
60
80
100
IC, Collector Current (A)
120
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTGF90A60T1G – Rev 0
August, 2007
20