APT50GF60JCU2 ISOTOP® Boost chopper NPT IGBT SiC chopper diode VCES = 600V IC = 50A @ Tc = 90°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Low leakage current - RBSOA and SCSOA rated G E K E C G • Chopper SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant ISOTOP® Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 600 70 50 230 ±20 277 Tj = 125°C 100A @ 500V TC = 25°C TC = 90°C TC = 25°C Reverse Bias Safe Operating Area Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APT50GF60JCU2 – Rev 0 September, 2009 Symbol VCES APT50GF60JCU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min Tj = 25°C Tj = 125°C T j = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Typ VGE = 0V VCE = 600V 1.7 2.0 2.2 4 Max 250 500 2.45 Unit µA V 6 400 V nA Max Unit Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGE = 15V VBus = 300V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω VGE = 15V Tj = 125°C VBus = 400V IC = 50A Tj = 125°C RG = 2.7Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Typ 2200 323 200 166 20 100 40 9 pF nC ns 120 12 42 10 ns 130 21 0.3 mJ 1 225 A Chopper SiC diode ratings and characteristics IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance Test Conditions VR=600V Min 600 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C IF = 20A, VR = 300V di/dt =800A/µs IF = 20A Typ Max 100 200 20 1.6 2 400 2000 28 f = 1MHz, VR = 200V 130 f = 1MHz, VR = 400V 100 www.microsemi.com Unit V µA A 1.8 2.4 V nC pF 2-6 APT50GF60JCU2 – Rev 0 September, 2009 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APT50GF60JCU2 Thermal and package characteristics Symbol Characteristic Min Typ IGBT SiC chopper Diode RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight Max 0.45 1.35 20 2500 -55 Unit °C/W V 150 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) Cathode 14.9 (.587) 15.1 (.594) Collector 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and (Inches) Typical IGBT Performance Curve Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) C, Capacitance (pF) 10000 Cies 1000 Coes Cres 100 0 10 20 30 40 240 Operating Frequency vs Collector Current 200 ZCS 160 VCE = 400V D = 50% RG = 2.7Ω TJ = 125°C TC= 75°C 120 80 hard switching 40 0 0 50 ZVS 20 VCE, Collector to Emitter Voltage (V) 40 60 80 100 120 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.9 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 3-6 APT50GF60JCU2 – Rev 0 September, 2009 Thermal Impedance (°C/W) 0.5 APT50GF60JCU2 Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 100 250µs Pulse Test < 0.5% Duty cycle 75 Ic, Collector Current (A) TJ=25°C 50 TJ=125°C 25 0 250µs Pulse Test < 0.5% Duty cycle 75 TJ=25°C 50 TJ=125°C 25 0 0 1 2 3 4 0 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 125 100 75 50 TJ=125°C 25 TJ=25°C 0 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) VCE=120V IC = 50A TJ = 25°C 16 14 VCE=300V 12 VCE=480V 10 8 6 4 2 0 0 10 25 50 75 100 125 150 175 200 Gate Charge (nC) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 70 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) Gate Charge 18 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 150 4 1.10 1.00 0.90 0.80 25 50 75 100 125 TJ, Junction Temperature (°C) 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4-6 APT50GF60JCU2 – Rev 0 September, 2009 Ic, Collector Current (A) 100 APT50GF60JCU2 Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VGE = 15V 50 40 Tj = 125°C VCE = 400V RG = 2.7Ω 30 20 0 25 50 75 100 125 175 150 VGE=15V, TJ=125°C 125 100 75 50 150 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 400V RG = 2.7Ω tf, Fall Time (ns) tr, Rise Time (ns) VGE=15V, TJ=125°C 125 150 TJ = 125°C 30 20 TJ = 25°C 10 0 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) TJ=125°C, VGE=15V 1 0.75 0.5 0.25 0 0 25 50 75 100 125 2.5 Eoff, Turn-off Energy Loss (mJ) VCE = 400V RG = 2.7Ω 1.25 0 150 Turn-On Energy Loss vs Collector Current 1.5 Eon, Turn-On Energy Loss (mJ) 100 40 10 VCE = 400V VGE = 15V RG = 2.7Ω 2 TJ = 125°C 1 0.5 0 150 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 1.5 120 Eon, 50A IC, Collector Current (A) VCE = 400V VGE = 15V TJ= 125°C 150 1.5 Switching Energy Losses vs Gate Resistance 1.25 25 50 75 100 125 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current ICE, Collector to Emitter Current (A) Switching Energy Losses (mJ) 75 VCE = 400V, VGE = 15V, RG = 2.7Ω 50 40 20 50 Current Fall Time vs Collector Current 60 30 25 ICE, Collector to Emitter Current (A) 60 50 VGE=15V, TJ=25°C VCE = 400V RG = 2.7Ω Eoff, 50A 1 0.75 0.5 0.25 100 80 60 40 20 0 0 0 5 10 15 20 Gate Resistance (Ohms) 25 0 200 400 600 VCE, Collector to Emitter Voltage (V) www.microsemi.com 5-6 APT50GF60JCU2 – Rev 0 September, 2009 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 60 APT50GF60JCU2 Typical SiC chopper diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 0.9 1.2 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 400 30 TJ=75°C IR Reverse Current (µA) IF Forward Current (A) TJ=25°C TJ=175°C 20 TJ=125°C 10 0 0 0.5 1 1.5 2 2.5 3 3.5 TJ=175°C 350 300 TJ=125°C 250 200 TJ=75°C 150 100 TJ=25°C 50 0 200 300 400 500 600 700 800 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 800 600 400 200 1 10 100 VR Reverse Voltage 1000 ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APT50GF60JCU2 – Rev 0 September, 2009 0