INFINEON BSM191

SIMOPAC® Module
BSM 191
VDS
= 1000 V
ID
= 28 A
R DS(on) = 0.37 Ω
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Power module
Single switch
N channel
Enhancement mode
Package with insulated metal base plate
1)
Package outline/Circuit diagram: 1
Type
Ordering Code
BSM 191
C67076-A1009-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
1000
V
Drain-gate voltage, RGS = 20 kΩ
VDGR
1000
Gate-source voltage
VGS
± 20
Continuous drain current, TC = 25 ˚C
ID
28
Pulsed drain current, TC = 25 ˚C
ID puls
112
Operating and storage temperature range
Tj, Tstg
– 55 … + 150
˚C
Power dissipation, TC = 25 ˚C
Ptot
700
W
Thermal resistance
Chip-case
Rth JC
≤ 0.18
Insulation test voltage2), t = 1 min.
Vis
2500
Vac
Creepage distance, drain-source
–
16
mm
Clearance, drain-source
–
11
DIN humidity category, DIN 40 040
–
F
IEC climatic category, DIN IEC 68-1
–
55/150/56
1)
2)
A
K/W
–
See chapter Package Outline and Circuit Diagrams.
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
71
03.96
BSM 191
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
V(BR)DSS
Gate threshold voltage
VGS = VDS, ID = 1 mA
VGS(th)
Zero gate voltage drain current
VDS = 1000 V, VGS = 0
Tj = 25 ˚C
Tj = 125 ˚C
I DSS
Gate-source leakage current
VGS = 20 V, VDS = 0
IGSS
Drain-source on-state resistance
VGS = 10 V, ID = 18 A
RDS(on)
V
1000
–
–
2.1
3.0
4.0
µA
–
–
50
300
250
1000
–
10
100
nA
Ω
–
0.33
0.37
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × RDS(on)max., ID = 18 A
gfs
15
22
–
S
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Ciss
–
22
30
nF
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Coss
–
1
1.5
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Crss
–
0.48
0.8
Turn-on time ton (ton = td (on) + tr)
VCC = 500 V, VGS = 10 V
ID = 18 A, RGS = 3.3 Ω
td (on)
–
60
–
tr
–
30
–
Turn-off time toff (toff = td (off) + tf)
VCC = 500 V, VGS = 10 V
ID = 18 A, RGS = 3.3 Ω
td (off)
–
350
–
tf
–
60
–
Semiconductor Group
72
ns
BSM 191
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse diode
Continuous reverse drain current
TC = 25 ˚C
IS
Pulsed reverse drain current
TC = 25 ˚C
ISM
Diode forward on-voltage
IF = 56 A , VGS = 0
VSD
Reverse recovery time
IF = IS, diF/dt = 100 A/ µs, VR = 100 V
trr
Reverse recovery charge
IF = IS, diF/dt = 100 A/ µs, VR = 100 V
Qrr
Semiconductor Group
A
–
–
28
–
–
112
–
1.15
1.4
–
2
–
V
µs
µC
–
73
30
–
BSM 191
Characteristics at Tj = 25 ˚C, unless otherwise specified.
Power dissipation Ptot = f (TC)
parameter: Tj = 150 ˚C
Typ. output characteristics ID = f (VDS)
parameter: tp = 80 µs
Safe operating area ID = f (VDS)
parameter: single pulse, TC = 25 ˚C
Tj ≤ 150 ˚C
Typ. transfer characteristic ID = f (VGS)
parameter: tp = 80 µs , VDS = 25 V
Semiconductor Group
74
BSM 191
Typ. drain-source on-state resistance
RDS(on) = f (ID)
parameter: VGS
Drain-source on-state resistance
ROS(on) = f (Tj)
parameter: ID = 18 A; VGS = 10 V, (spread)
Gate threshold voltage
VGS(th) = f (Tj)
parameter: VDS = VGS , ID = 1 mA
Drain current ID = f (TC)
parameter: VGS ≥ 10 V, Tj = 150 ˚C
Semiconductor Group
75
BSM 191
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f =1 MHz (spread)
Drain-source breakdown voltage
V(BR)DSS (Tj) = b × V(BR)DSS (25 ˚C)
Forward characteristics
of reverse diode IF = f (VSD)
parameter: Tj, tp = 80 µs (spread)
Semiconductor Group
76
BSM 191
Transient thermal impedance ZthJC = f (tp)
parameter: D = tp/T
Typ. gate charge VGS = f (QGate)
parameter: IDpuls = 42 A
Semiconductor Group
77