1N4896(A) – 1N4915(A) Available 12.8 Volt LOW NOISE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES DESCRIPTION The 1N4896(A) through 1N4915(A) series provides a selection of temperature compensated 12.8 V (nominal) Zener diodes. The voltage tolerace is +/- 5% and the "A" version of the parts o in this series have an expanded low temperature range down to -55 C. Microsemi also offers numerous other Zener reference diode products for a variety of other voltages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • DO-35 (DO-204AH) Package JEDEC registered 1N4896 thru 1N4915 series. 12.8 volt nominal Zener voltage +/- 5%. o o Temperature Coefficient range: 0.01 %/ C to 0.001%/ C. Metallurgically bonded. Double plug construction. RoHS compliant versions available. APPLICATIONS / BENEFITS • • • • • Provides minimal voltage changes over a broad temperature range. For instrumentation and other circuit designs requiring a stable voltage reference. Low noise. Flexible axial-lead mounting terminals. Non-sensitive to ESD per MIL-STD-750 method 1020. MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance, Junction to Lead @ 0.375 inches from body o (1) Off-State Power Dissipation @ TA = +50 C Maximum Reverse Current @ 25 ºC and V R = 8 V Solder Temperature @ 10 s Symbol Value TJ and TSTG R ӨJL -65 to +175 300 C ºC/W PD I RM TSP 500 15 260 mW µA o C Notes: 1. Derate at 4 mW/oC above T A = +50 oC. Unit o MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com LDS-0272, Rev. 1 (121054) ©2012 Microsemi Corporation Page 1 of 6 1N4896(A) – 1N4915(A) MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed glass case with axial DO-35 (DO-204AH) package. TERMINALS: Tin-lead plated or RoHS compliant matte-tin plating available and solderable per MIL-STD-750, method 2026. MARKING: Part number and cathode band. POLARITY: Reference diode to be operated with the banded end positive with respect to the opposite end. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. (Add “TR” suffix to part number.) WEIGHT: 0.2 grams. See Package Dimensions on the last page. PART NOMENCLATURE 1N941 A (e3) JEDEC type number (See Electrical Characteristics table) RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Temperature Coefficient range: o o A = -55 C to +100 C o o Blank = +25 C to +100 C SYMBOLS & DEFINITIONS Definition Symbol IR I Z, I ZT, I ZK I ZM VZ Z ZT or Z ZK Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Regulator Current: The dc regulator current (I Z), at a specified test point (I ZT), near breakdown knee (I ZK ). Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. Zener Voltage: The Zener voltage the device will exhibit at a specified current (I Z) in its breakdown region. Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of I ZT or I ZK ) and superimposed on I ZT or I ZK respectively. LDS-0272, Rev. 1 (121054) ©2012 Microsemi Corporation Page 2 of 6 1N4896(A) – 1N4915(A) o ELECTRICAL CHARACTERISTICS @ 25 C unless otherwise specified. JEDEC TYPE NUMBER TEST CURRENT I ZT (Note 1 & 5) mA 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 1N4896 1N4896A 1N4897 1N4897A 1N4898 1N4898A 1N4899 1N4899A 1N4900 1N4900A 1N4901 1N4901A 1N4902 1N4902A 1N4903 1N4903A 1N4904 1N4904A 1N4905 1N4905A 1N4906 1N4906A 1N4907 1N4907A 1N4908 1N4908A 1N4909 1N4909A 1N4910 1N4910A 1N4911 1N4911A 1N4912 1N4912A 1N4913 1N4913A 1N4914 1N4914A 1N4915 1N4915A MAX. VOLTAGE CHANGE WITH TEMPERATURE ∆V Z (Note 2 & 5) Volts 0.096 0.198 0.048 0.099 0.019 0.040 0.010 0.020 0.096 0.198 0.048 0.099 0.019 0.040 0.010 0.020 0.096 0.198 0.048 0.099 0.019 0.040 0.010 0.020 0.096 0.198 0.048 0.099 0.019 0.040 0.010 0.020 0.096 0.198 0.048 0.099 0.019 0.040 0.010 0.020 TEMPERATURE RANGE o C +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 +25 to +100 -55 to +100 EFFECTIVE TEMPERATURE COEFFICIENT α VZ (Note 3) +/-%/oC 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 MAXIMUM DYNAMIC IMPEDANCE Z ZT (Note 4) MAXIMUM NOISE DENSITY ND Ohms 400 400 400 400 400 400 400 400 200 200 200 200 200 200 200 200 100 100 100 100 100 100 100 100 50 50 50 50 50 50 50 50 25 25 25 25 25 25 25 25 uV√cps 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.22 0.22 0.22 0.22 0.22 0.22 0.22 0.22 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 *JEDEC Registered Data. NOTES: 1. 2. 3. 4. 5. 6. Nominal voltage for all types is 12.8 Volts +/-5%. Referred to as the “box” measurement method, the ∆V Z is the maximum voltage variance that will occur as the voltage is scanned thru all temperatures between the temperature range limits. o The effective temperature coefficients are tabulated in %/ C primarily for information only since temperature compensated diodes inherently have a non-linear voltage-temperature characteristic. The dynamic Zener impedance Z ZT is derived from the resulting AC voltage developed when a 60 cps, rms AC current equal to 10% of the DC Zener current I ZT is superimposed on I ZT . Voltage measurements to be performed 15 seconds after application of DC current. Consult factory for JANTX, JANTXV or JANS equivalent SCDs. LDS-0272, Rev. 1 (121054) ©2012 Microsemi Corporation Page 3 of 6 1N4896(A) – 1N4915(A) ZENER Impedance ZZT (Ohms) GRAPHS Operating Current I ZT (mA) Change in Temperature Coefficient %/°C FIGURE 1 Zener Impedance vs. Operating Current (1N4896 thru 1N4915A) Operating Current I ZT (mA) Operating Current I ZT (mA) Operating Current I ZT (mA) FIGURE 2 Typical Change of Temperature Coefficient with Change in Operating Current LDS-0272, Rev. 1 (121054) ©2012 Microsemi Corporation Page 4 of 6 1N4896(A) – 1N4915(A) Change in Temperature Coefficient %/°C GRAPHS (continued) Operating Current I ZT (mA) Operating Current I ZT (mA) FIGURE 2 (continued) Typical Change of Temperature Coefficient with Change in Operating Current Rated Power Dissipation - mW Noise density, (ND ) is specified in microvolt-rms per squreroot-hertz. Actual measurement is performed using a 1 KHz to 3 KHz frequency bandpass filter at a constant Zener test o current (IZT) AT 25 C ambient temperature. ND is calculated from the formula. T L Lead temperature (°C) 3/8” from body FIGURE 3 Noise Density Measurement Circuit LDS-0272, Rev. 1 (121054) FIGURE 4 Power Derating Curve ©2012 Microsemi Corporation Page 5 of 6 1N4896(A) – 1N4915(A) PACKAGE DIMENSIONS Symbol BD BL LD LL LL1 Dimensions Inch Millimeters Min Max Min Max .060 .107 1.52 2.72 .120 .300 3.05 7.62 .018 .023 0.46 0.58 1.000 1.500 25.40 38.10 .050 1.27 Notes 3 3 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder but shall not be subject to minimum limit of BD. 4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than heat slugs. 5. In accordance with ASME Y14.5M, diameters are equivalent to ΦX symbology. LDS-0272, Rev. 1 (121054) ©2012 Microsemi Corporation Page 6 of 6