JANSR2N7381 Qualified Levels: JANSD, JANSR and JANSF Radiation Hardened N-Channel MOSFET Qualified per MIL-PRF-19500/614 QPL RANGE and RAD LEVEL Radiation Level TID JANSD2N7381 JANSR2N7381 JANSF2N7381 10 Krad 100 Krad 300 Krad DESCRIPTION These products are well suited for Space level applications requiring Total Dose radiation (TID) tolerance and Single Event capability. This 2N7381 is available in three qualified radiation levels and is packaged in a hermetic TO-257 outline. These products have all the same performance features of industry standard MOSFETs and may be used for most voltage control and fast switching applications. TO-257AA Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • Ease of paralleling Hermetically sealed package Low gate charge Single event hardened for space applications RHA level JANS qualifications available per MIL-PRF-19500/614. (See part nomenclature for all available options.) APPLICATIONS / BENEFITS • • • • Space level DC-DC converters Satellite Motor Control circuits Synchronous rectification Linear-mode applications MAXIMUM RATINGS @ T C = +25 ºC unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case (see Figure 4) Total Power Dissipation @ T A = +25 °C @ T C = +25 °C Gate-Source Voltage, dc (2) (3) Drain Current, dc @ T C = +25 ºC (2) (3) Drain Current, dc @ T C = +100 ºC (4) Off-State Current (Peak Total Value) Source Current NOTES: (1) Symbol Value T J & T stg R ӨJC -55 to +150 1.67 2 75 ± 20 9.4 6.0 37.6 9.4 PT V GS I D1 I D2 I DM IS Unit o °C C/W W V A A A A 1. Derated linearly 0.6 W/ºC for T C > +25 ºC 2. The following formula derives the maximum theoretical I D limit. I D is limited by package and internal wires and may also be limited by pin diameter: 3. See Figure 3 for maximum drain current graphs 4. I DM = 4 X I D1 as calculated in note (2) T4-LDS-0124, Rev. 3 (11/18/13) ©2013 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 7 JANSR2N7381 MECHANICAL and PACKAGING • • • • • • CASE: Nickel plated copper base & 1020 steel frame TERMINALS: Solder dipped copper cored 52 alloy plating MARKING: Alpha numeric POLARITY: See Schematic on last page WEIGHT: Approximately 3.43 grams See Package Dimensions on last page. PART NOMENCLATURE JANSR 2N7381 Reliability Level JANSD = 10K Rads (Si) JANSR = 100K Rads (Si) JANSF = 300K Rads (Si) SYMBOLS & DEFINITIONS Definition Symbol di/dt ID I DSS IF I GSS IS r DS(on) RG V (BR)DSS JEDEC type number Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Drain current, dc: The direct current into the drain terminal. Zero-Gate-Voltage Drain Current: The direct current into the gate terminal when the gate-source voltage is zero. Forward current: The current flowing from the p-type region to the n-type region. Reverse-Gate Current, Drain Short-Circuited to Source: The direct current into the gate terminal with a forward gate source voltage applied (I GSSF ) or reverse gate source voltage applied (I GSSF ) and the drain terminal short-circuited to the source terminal. Source current, dc: The direct current into the source terminal. Static Drain-Source On-State Resistance: The dc resistance between the drain and source terminals with a specified gate-source voltage applied to bias the device to the on state. Gate drive impedance or Gate resistance Drain-Source Breakdown Voltage: Gate short-circuited to the source terminal. V DD Drain supply voltage, dc: The dc supply voltage applied to a circuit connected to the drain terminal. V DG Drain-gate voltage, dc: The dc voltage between the drain and gate terminals. V DS Drain source voltage, dc: The dc voltage between the drain terminal and the source terminal. V GS Gate source voltage, dc: The dc voltage between the gate terminal and the source terminal. T4-LDS-0124, Rev. 3 (11/18/13) ©2013 Microsemi Corporation Page 2 of 7 JANSR2N7381 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions PRE-IRRADIATION CHARACTERISTICS Drain-Source Breakdown Voltage V GS = 0 V, I D = 1.0 mA Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = 1 mA V DS ≥ V GS , I D = 1 mA, T J = +125°C V DS ≥ V GS , I D = 1 mA, T J = -55°C Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125°C Drain Current V GS = 0 V, V DS = 160 V Drain Current V GS = 0 V, V DS = 160 V, T J = +125 °C Static Drain-Source On-State Resistance V GS = 12 V, I D = 6.0 A pulsed Static Drain-Source On-State Resistance V GS = 12 V, I D = 9.4 A pulsed Static Drain-Source On-State Resistance T J = +125°C V GS = 12 V, I D = 6.0 A pulsed Diode Forward Voltage V GS = 0 V, I D = 9.4 A pulsed DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge V GS = 12 V, I D = 9.4 A, V DS = 100 V Gate to Source Charge V GS = 12 V, I D = 9.4 A, V DS = 100 V Gate to Drain Charge V GS = 12 V, I D = 9.4 A, V DS = 100 V Min. V (BR)DSS 200 V GS(th)1 V GS(th)2 V GS(th)3 2.0 1.0 = 100 V = 100 V = 100 V ©2013 Microsemi Corporation Unit V 4.0 V 5.0 ±100 ±200 nA I DSS1 25 µA I DSS2 0.25 mA r DS(on)1 0.40 Ω r DS(on)2 0.49 Ω r DS(on)3 0.75 Ω V SD 1.4 V Max. Unit Q g(on) 50 nC Q gs 10 nC Q gd 25 nC Max. Unit t d(on) 25 ns tr 50 ns t d(off) 70 ns tf 60 ns t rr 460 ns Symbol = 100 V Max. I GSS1 I GSS2 Symbol SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-on delay time I D = 9.4 A, V GS = 12 V, R G = 7.5 Ω, V DD Rise time I D = 9.4 A, V GS = 12 V, R G = 7.5 Ω, V DD Turn-off delay time I D = 9.4 A, V GS = 12 V, R G = 7.5 Ω, V DD Fall time I D = 9.4 A, V GS = 12 V, R G = 7.5 Ω, V DD Diode Reverse Recovery Time di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F = 9.4 A T4-LDS-0124, Rev. 3 (11/18/13) Symbol Min. Min. Page 3 of 7 JANSR2N7381 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued) (1) POST-IRRADIATION Parameters / Test Conditions Drain-Source Breakdown Voltage V GS = 0 V, I D = 1 mA Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = 1.0 mA JANSD, R V DS ≥ V GS , I D = 1.0 mA JANSF Gate Current V GS = ±20 V, V DS = 0 V Drain Current V GS = 0 V, V DS = 80% of V DS (pre-irradiated) JANSD, R V GS = 0 V, V DS = 80% of V DS (pre-irradiated) JANSF Static Drain-Source On-State Voltage V GS = 12 V, I D = 6.0 pulsed JANSD, R V GS = 12 V, I D = 6.0 pulsed JANSF Diode Forward Voltage V GS = 0 V, I D = 9.4 pulsed Symbol Min. V (BR)DSS 200 V GS(th)1 V GS(th)1 2.0 1.25 Max. Unit V 4.0 4.5 V I GSS1 ±100 nA I DSS1 25 50 µA r DS(on) 2.4 3.18 V V SD 1.4 V NOTE: 1. Post-irradiation electrical characteristics apply to devices subjected to steady state total dose irradiation testing in accordance with MIL-STD-750, method 1019. Separate samples are tested for V GS bias (12V), and V DS bias (160V) conditions. ID Drain-to-Source Current (A) SAFE OPERATING AREA V DS , Drain-to-Source Voltage (V) FIGURE 1 T4-LDS-0124, Rev. 3 (11/18/13) ©2013 Microsemi Corporation Page 4 of 7 JANSR2N7381 GRAPHS SEE (Single Event Effect) Typical Response: Heavy Ion testing of the 2N7381 device was completed by similarity of die structure to the 2N7262. The 2N7262 has been characterized at the Texas A&M cyclotron. The following SEE curve has been established using the elements, LET, range, and Total Energy conditions as shown: VDS, Drain Source Voltage, V FIGURE 2 V GS , Gate Source Voltage, V It should be noted that total energy levels are considered to be a factor in SEE characterization. Comparisons to other datasets should not be based on LET alone. Please consult factory for more information. T4-LDS-0124, Rev. 3 (11/18/13) ©2013 Microsemi Corporation Page 5 of 7 JANSR2N7381 ID Drain Current (Amperes) GRAPHS T C Case Temperature (°C) Thermal impedance ZθJC FIGURE 3 Maximum Drain Current vs Case Temperature t1, Rectangular Pulse Duration (sec) FIGURE 4 Thermal Impedance Curves T4-LDS-0124, Rev. 3 (11/18/13) ©2013 Microsemi Corporation Page 6 of 7 JANSR2N7381 PACKAGE DIMENSIONS Ltr BL CH LD LL LO LS MHD MHO TL TT TW TERM 1 TERM 2 TERM 3 Dimensions Millimeters Min Max Min Max 0.410 0.430 10.41 10.92 0.190 0.200 4.83 5.08 0.025 0.035 0.64 0.89 0.505 0.595 12.82 15.11 0.120 BSC 3.05 BSC 0.100 BSC 2.54 BSC 0.140 0.150 3.56 3.81 0.527 0.537 13.39 13.64 0.645 0.665 16.38 16.89 0.035 0.045 0.89 1.14 0.410 0.420 10.41 10.67 DRAIN SOURCE GATE Inch NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for information only. 3. Glass meniscus included in dimension TL and BL. SCHEMATIC T4-LDS-0124, Rev. 3 (11/18/13) ©2013 Microsemi Corporation Page 7 of 7