IHW40T60 q TrenchStop® Series Low Loss DuoPack : IGBT in TrenchStop®-technology with soft, fast recovery anti-parallel EmCon HE diode Features: • Very low VCE(sat) 1.5 V (typ.) • Maximum junction temperature 175 °C • Short circuit withstand time – 5µs • Trench and fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCE(sat) and positive temperature coefficient • Low EMI • Low gate charge • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice models : http://www.infineon.com/igbt/ C G E PG-TO-247-3 Applications: • Inductive Cooking • Soft & Hard Switching Applications Type IHW40T60 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600V 40A 1.55V 175°C H40T60B PG-TO-247-3 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax IC Value 600 80 TC = 100°C 40 Pulsed collector current, tp limited by Tjmax ICpuls 120 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 120 Diode forward current, limited by Tjmax IF TC = 25°C 60 TC = 100°C 30 Diode pulsed current, tp limited by Tjmax IFpuls 90 Gate-emitter voltage VGE ±20 2) V A TC = 25°C Transient Gate-emitter voltage (tp < 10 µs, D<0.01) Unit V ±25 tSC 5 µs Power dissipation TC = 25°C Ptot 303 W Operating junction temperature Tj -40...+175 °C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Short circuit withstand time VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.0 Sep. 08 IHW40T60 q TrenchStop® Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.49 K/W RthJCD 1.05 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, RthJA 40 junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j = 25°C - 1.55 2.05 T j = 175 °C - 1.90 - T j = 25°C - 1.65 2.05 T j = 175 °C - 1.60 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =0.5mA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V, I C =40A VGE=0V, IF=30A Gate-emitter threshold voltage VGE(th) I C =0 .58mA, V C E =V G E Zero gate voltage collector current ICES V C E = 60 0 V , VGE=0V µA T j = 25°C - - 40 T j = 175 °C - - 1000 Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 100 nA Transconductance gfs V C E =20V, I C =40A - 22 - S Integrated gate resistor RGint - Ω Dynamic Characteristic Input capacitance Ciss V C E =25V, - 2423 - Output capacitance Coss VGE=0V, - 113 - Reverse transfer capacitance Crss f=1MHz - 72 - Gate charge QGate V C C = 48 0 V, I C =40A - 215 - nC - 13 - nH pF V G E =15V Internal emitter inductance LE measured 5mm (0.197 in.) from case Power Semiconductors 2 Rev. 2.0 Sep. 08 IHW40T60 q TrenchStop® Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. max. - - - - - - - 186 - - 66.3 - - - - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 0.92 - Ets T j = 25°C , V C C = 40 0 V, I C =40A, V G E = 0 /1 5 V, RG=5.6 Ω, L σ 1 ) =4 0nH , C σ 1 ) =30pF Energy losses include “tail” and diode reverse recovery. - 0.92 - Diode reverse recovery time trr T j = 25°C , - 143 - ns Diode reverse recovery charge Qrr V R = 40 0 V , I F =30A, - 0.92 - µC Diode peak reverse recovery current Irrm d i F /d t= 910A/µs - 16.3 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 603 - A/µs mJ Anti-Parallel Diode Characteristic Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. Typ. max. - - - - - - - 196 - - 76.5 - - - - Unit IGBT Characteristic - 1.4 - Ets T j = 175 °C , V C C = 40 0 V, I C =40A, V G E = 0 /1 5 V, RG= 5.6 Ω L σ 1 ) =4 0nH , C σ 1 ) =30pF Energy losses include “tail” and diode reverse recovery. - 1.4 - Diode reverse recovery time trr T j = 175 °C - 225 - ns Diode reverse recovery charge Qrr V R = 40 0 V , I F =30A, - 2.39 - µC Diode peak reverse recovery current Irrm d i F /d t= 910A/µs - 22.3 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 310 - A/µs Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns mJ Anti-Parallel Diode Characteristic 1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.0 Sep. 08 IHW40T60 q TrenchStop® Series 140A 100A 120A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT tp=1µs 100A TC=80°C 80A TC=110°C 60A 40A Ic 20A 0A 10Hz 2µs 10A 10µs 50µs DC 1A 100Hz 1kHz 10kHz 100kHz 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for triangular current (Eon = 0, hard turn-off) (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 5.6Ω) 1ms 10ms 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C; VGE=15V) 350W 300W 100W IC, COLLECTOR CURRENT POWER DISSIPATION 250W Ptot, 60A 200W 150W 40A 20A 50W 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.0 Sep. 08 IHW40T60 q TrenchStop® Series 100A VGE=20V 15V 80A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 100A 13V 11V 60A 9V 7V 40A 80A 15V 13V 60A 11V 9V 7V 40A 20A 20A 0A 0A 0V 1V 2V 0V 3V 100A 80A 60A 40A TJ=175°C 20A 25°C 0A 0V 2V 4V 6V 8V 10V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT VGE=20V 2.5V IC=80A 2.0V IC=40A 1.5V IC=20A 1.0V 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.0 Sep. 08 IHW40T60 q TrenchStop® Series 100ns 10ns td(off) tf t, SWITCHING TIMES t, SWITCHING TIMES td(off) 100ns tf 10ns 0A 20A 40A 10Ω 60A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 5.6Ω, Dynamic test circuit in Figure E) 20Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 40A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 6V t, SWITCHING TIMES td(off) 100ns tf 10ns 25°C 50°C 75°C 100°C 125°C 150°C 5V typ. min. 4V 3V 25°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 40A, RG=5.6Ω, Dynamic test circuit in Figure E) Power Semiconductors max. 50°C 75°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.8mA) 6 Rev. 2.0 Sep. 08 IHW40T60 q TrenchStop® Series E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 2.5mJ Eoff 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 2.0mJ Eoff 1.5mJ 1.0mJ 0.5mJ 0.0mJ 0A 10A 20A 30A 40A 50A 60A 0Ω 70A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, RG = 5.6Ω, Dynamic test circuit in Figure E) 10Ω 20Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 40A, Dynamic test circuit in Figure E) 1.2mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 1.4mJ Eoff 1.0mJ 0.8mJ 0.6mJ 0.4mJ 0.2mJ 0.0mJ 25°C 50°C 75°C Eoff 1.0mJ 0.5mJ 0.0mJ 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 40A, RG = 5.6Ω, Dynamic test circuit in Figure E) Power Semiconductors 1.5mJ 350V 400V 450V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 40A, RG = 5.6Ω, Dynamic test circuit in Figure E) 7 Rev. 2.0 Sep. 08 IHW40T60 q TrenchStop® Series 1nF 120V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 12V 480V 9V 6V Coss 100pF 3V Crss 0V 0nC 30nC 60nC 90nC 120nC150nC180nC210nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=40 A) 0V 10V 20V 30V 40V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) SHORT CIRCUIT WITHSTAND TIME 12µs 10µs 8µs 6µs tSC, 4µs 2µs 0µs 10V 11V 12V 13V 14V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C) Power Semiconductors 8 Rev. 2.0 Sep. 08 IHW40T60 q TrenchStop® Series D=0.5 ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE 0 0.2 -1 10 K/W 0.1 0.05 0.02 0.01 single pulse -2 10 K/W R,(K/W) 0.093 0.119 0.0828 0.0386 0.0221 R1 τ, (s) -2 8.74*10 -2 1.07*10 -4 7.49*10 -5 8.85*10 -6 7.39*10 R2 C1= τ1/R1 C2= τ2/R2 10 K/W D=0.5 0.2 0.1 -1 10 K/W 0.02 R 1 100µs 1ms tP, PULSE WIDTH Figure 20. IGBT transient thermal resistance (D = tp / T) trr, REVERSE RECOVERY TIME 250ns C1= τ1/R1 200ns 150ns 100ns 0ns 700A/µs C2= τ2/R2 single pulse tP, PULSE WIDTH Figure 21. Diode transient thermal impedance as a function of pulse width (D=tP/T) T J=175°C TJ=175°C TJ=25°C 50ns R2 10 K/W 100ns 1µs 10µs 100µs 1ms 10ms100ms 10ms 100ms Qrr, REVERSE RECOVERY CHARGE 10µs τ, (s) -1 1.26*10 -3 9.7*10 -3 1.4*10 -4 1.51*10 0.01 -2 1µs R,(K/W) 0.151 0.223 0.05 0.273 0.111 2.0µC 1.5µC 1.0µC T J=25°C 0.5µC 0.0µC 800A/µs 700A/µs 900A/µs 1000A/µs diF/dt, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=30A, Dynamic test circuit in Figure E) Power Semiconductors 9 800A/µs 900A/µs 1000A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 30A, Dynamic test circuit in Figure E) Rev. 2.0 Sep. 08 IHW40T60 q TrenchStop® Series T J =25°C 15A 10A 5A 0A 700A/µs 800A/µs 900A/µs dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT 20A Irr, REVERSE RECOVERY CURRENT T J =175°C diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 30A, Dynamic test circuit in Figure E) T J=175°C -300A/µs -150A/µs 800A/µs 900A/µs 1000A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=30A, Dynamic test circuit in Figure E) TJ=25°C 70A 175°C 60A VF, FORWARD VOLTAGE IF, FORWARD CURRENT -450A/µs 0A/µs 700A/µs 1000A/µs T J=25°C -600A/µs 50A 40A 30A 20A 2.0V I F =60A 1.5V 30A 15A 1.0V 0.5V 10A 0A 0V 1V 0.0V 0°C 2V VF, FORWARD VOLTAGE Figure 26. Typical diode forward current as a function of forward voltage Power Semiconductors 10 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 27. Typical diode forward voltage as a function of junction temperature Rev. 2.0 Sep. 08 TrenchStop® Series IHW40T60 q PG-TO247-3 Power Semiconductors 11 Rev. 2.0 Sep. 08 IHW40T60 q TrenchStop® Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 τn r2 rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Figure B. Definition of switching losses Power Semiconductors 12 Rev. 2.0 Sep. 08 TrenchStop® Series IHW40T60 q Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. TrenchStop® is a registered trademark of Infineon Technologies AG. CiPoS™, CoolMOS™, CoolSET™, DuoPack™, EmCon™ and thinQ!™ are trademarks of Infineon Technologies AG. Power Semiconductors 13 Rev. 2.0 Sep. 08