SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • P-TO-220-3-45 High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKB06N60HS VCE IC Eoff Tj Marking Package 600V 6A 80µJ 150°C K06N60HS P-TO-220-3-45 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current IC Value 600 Unit V A TC = 25°C 12 TC = 100°C 6 Pulsed collector current, tp limited by Tjmax ICpul s 24 Turn off safe operating area - 24 VCE ≤ 600V, Tj ≤ 150°C IF Diode forward current TC = 25°C 12 TC = 100°C 6 Diode pulsed current, tp limited by Tjmax IFpul s 24 Gate-emitter voltage static transient (tp<1µs, D<0.05) VGE ±20 ±30 V tSC 10 µs Ptot 68 W Operating junction and storage temperature Tj , Tstg -55...+150 °C Time limited operating junction temperature for t < 150h Tj(tl) 175 Soldering temperature (reflow soldering, MSL1) - 220 2) Short circuit withstand time VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.2 June 06 SKB06N60HS Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 1.85 K/W RthJCD 4.5 RthJA 62 RthJA 40 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient 1) SMD version, device on PCB Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 °C 2.8 3.15 T j =1 5 0° C 3.5 4.00 1.5 2.05 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA Collector-emitter saturation voltage VCE(sat) VF Diode forward voltage V V G E = 15 V , I C = 6 A V G E = 0V , I F = 6 A T j =2 5 °C T j =1 5 0° C - 1.55 2.05 3 4 5 Gate-emitter threshold voltage VGE(th) I C = 20 0 µA , V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V, V G E = 0 V µA T j =2 5 °C - - 40 T j =1 5 0° C - - 2000 100 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - Transconductance gfs V C E = 20 V , I C = 6 A - 4 S Input capacitance Ciss V C E = 25 V , - 350 pF Output capacitance Coss V G E = 0V , - 50 Reverse transfer capacitance Crss f= 1 MH z - 23 Gate charge QGate V C C = 48 0 V, I C =6 A - 33 nC - 7 nH - 48 A nA Dynamic Characteristic V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) IC(SC) V G E = 15 V ,t S C ≤ 10 µs V C C ≤ 4 0 0 V, T j ≤ 1 5 0° C 1) 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.2 June 06 SKB06N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. - 11 - 11 - 196 - 41 - 0.10 - 0.09 - 0.19 max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 50 Ω 2) L σ = 60 n H, 2) C σ = 40 pF Energy losses include “tail” and diode reverse recovery. trr T j =2 5 °C , - 100 tS V R = 4 00 V , I F = 6 A, - 24 tF d i F / d t =6 2 6 A/ µs - 76 ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Qrr - 220 Diode peak reverse recovery current Irrm - 7 Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 315 ns nC A A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. - 8 - 3 - 63 - 59 - 0.11 - 0.08 - 0.19 - 10 - 13 - 216 - 29 - 0.15 - 0.12 - 0.27 max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 2) 1) T j =1 5 0° C V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , RG= 8Ω 1) L σ = 60 n H, 1) C σ = 40 pF Energy losses include “tail” and diode reverse recovery. T j =1 5 0° C V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 5 0Ω 1) L σ = 60 n H, 1) C σ = 40 pF Energy losses include “tail” and diode reverse recovery. ns mJ ns mJ Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E. Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E. Power Semiconductors 3 Rev. 2.2 June 06 SKB06N60HS Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 5 0° C - 150 tS V R = 4 00 V , I F = 6 A, - 27 tF d i F / d t =6 7 3 A/ µs - 123 ns Diode reverse recovery charge Qrr - 500 nC Diode peak reverse recovery current Irrm - 8.8 A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 280 A/µs Power Semiconductors 4 Rev. 2.2 June 06 SKB06N60HS tP=4µs 8µs TC=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 20A TC=110°C 10A Ic 15µs 50µs 1A 200µs 1ms Ic 0A 10Hz 100Hz 1kHz 10kHz 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 50Ω) DC 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤150°C;VGE=15V) 60W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 10A 40W 20W 0W 25°C 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 5A 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 5 Rev. 2.2 June 06 SKB06N60HS VGE=20V 15A VGE=20V 15A 15V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 15V 13V 11V 10A 9V 7V 5V 5A 0A 0V 2V 4V IC, COLLECTOR CURRENT -55°C 10A 5A 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V) Power Semiconductors 7V 5V 5A 2V 4V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 25°C 0V 9V 0V T J=150°C 0A 11V 10A 0A 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) 15A 13V 5,5V 5,0V IC=12A 4,5V 4,0V 3,5V IC=6A 3,0V 2,5V IC=3A 2,0V 1,5V 1,0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 6 Rev. 2.2 June 06 SKB06N60HS td(off) tf t, SWITCHING TIMES t, SWITCHING TIMES 100ns td(on) 10ns 100 ns td(off) tf 10 ns td(on) tr tr 1ns 0A 5A 1 ns 10A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=50Ω, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES tf 10ns td(on) 0°C tr 50°C 100°C 100Ω 150Ω 200Ω 5,0V 4,5V max. 4,0V 3,5V typ. 3,0V 2,5V min. 2,0V 1,5V -50°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=6A, RG=50Ω, Dynamic test circuit in Figure E) Power Semiconductors 50Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=6A, Dynamic test circuit in Figure E) td(off) 100ns 0Ω 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.5mA) 7 Rev. 2.2 June 06 SKB06N60HS *) Eon include losses due to diode recovery Ets* 0,6 mJ Eon* 0,3mJ 0,2mJ Eoff 0,1mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 0,5mJ 0,4mJ Ets* 0,5 mJ 0,4 mJ Eon* 0,3 mJ Eoff 0,2 mJ 0,1 mJ 0,0mJ 0,0A 2,5A 5,0A 7,5A 0,0 mJ 10,0A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=50Ω, Dynamic test circuit in Figure E) 0,2mJ Ets* Eon* 0,1mJ Eoff 0,0mJ 0°C 50°C 100°C 50Ω 100Ω 150Ω 200Ω 0 D = 0 .5 0 K /W 0.2 0 .1 -1 0 .0 5 0 K /W 0 .0 2 -2 0.01 R,(K/W) 0.705 0.561 0.583 τ, (s) 0.0341 3.74E-3 3.25E-4 R1 0 K /W sing le p u lse R2 C 1 = τ 1 / R 1 C 2 = τ 2 /R 2 -3 0 K /W 1µ s 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=6A, RG=50Ω, Dynamic test circuit in Figure E) Power Semiconductors 0Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=6A, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE *) Eon include losses due to diode recovery E, SWITCHING ENERGY LOSSES *) Eon include losses due to diode recovery 1 0µ s 1 0 0 µs 1m s 10 m s 1 00 m s 1s tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T) 8 Rev. 2.2 June 06 15V Ciss 120V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE SKB06N60HS 480V 10V 100pF Coss 5V Crss 0V 0nC 10nC 20nC 30nC 10pF 40nC 15µs 10µs 5µs 0µs 10V 11V 12V 13V 20V 70A 60A 50A 40A 30A 20A 10A 0A 14V VGE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 10V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT tSC, SHORT CIRCUIT WITHSTAND TIME QGE, GATE CHARGE Figure 17. Typical gate charge (IC=6 A) 0V 10V 12V 14V 16V 18V VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) 9 Rev. 2.2 June 06 SKB06N60HS IF=12A 200ns IF=6A IF=3A 100ns 0ns 200A/µs 400A/µs 600A/µs Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 300ns IF=12A 0,50µC IF=6A 0,00µC 200A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR=400V, TJ=150°C, Dynamic test circuit in Figure E) IF=3A 0,25µC 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR=400V, TJ=150°C, Dynamic test circuit in Figure E) dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT -400A/µs 10,0A IF=3A 7,5A IF=12A IF=6A 5,0A -300A/µs -200A/µs -100A/µs 2,5A 200A/µs 400A/µs 600A/µs 800A/µs -0A/µs 200A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR=400V, TJ=150°C, Dynamic test circuit in Figure E) Power Semiconductors 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, TJ=150°C, Dynamic test circuit in Figure E) 10 Rev. 2.2 June 06 SKB06N60HS TJ=-55°C 25°C 2,0V 150°C VF, FORWARD VOLTAGE IF, FORWARD CURRENT 10A 8A 6A 4A 1,8V 1,6V 1,4V 2A 1,2V 0A 0,0V 0,5V 1,0V -50°C 1,5V ZthJC, TRANSIENT THERMAL RESISTANCE VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage IF12A IF=6A IF=3A 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature D=0.5 0 0 K/W 0.2 0.1 τ, (s) 7.25*10-2 6.44*10-3 7.13*10-4 7.16*10-5 R,(K/W) 0.523 0.550 0.835 1.592 0.05 0.02 -1 0 K/W R1 0.01 single pulse R2 C 1= τ1/R 1 C 2 = τ 2 /R 2 -2 0 K/W 1µs 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D=tP/T) Power Semiconductors 1s 11 Rev. 2.2 June 06 SKB06N60HS P-TO220-3-45 Power Semiconductors 12 Rev. 2.2 June 06 SKB06N60HS i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tr r tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 τn r2 rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =60nH an d Stray capacity C σ =40pF. Figure B. Definition of switching losses Published by Power Semiconductors 13 Rev. 2.2 June 06 SKB06N60HS Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 6/8/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 14 Rev. 2.2 June 06