BTS 452 T
Smart Power High-Side-Switch
Features
Product Summary
• Overload protection
Overvoltage protection
Vbb(AZ)
• Current limitation
Operating voltage
Vbb(on)
• Short circuit protection
On-state resistance
RON
200
mΩ
• Thermal shutdown with restart
Nominal load current
IL(ISO)
1.8
A
62
V
6...52 V
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection
with external resistor
• CMOS compatible input
• Loss of GND and loss of Vbb protection
• ESD - Protection
P-TO252-5-11
• Very low standby current
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V, 24 V and 42 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
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BTS 452 T
Block Diagram
+ V bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
V Logic
Limit for
unclamped
ind. loads
Charge pump
Level shifter
Rectifier
OUT
Temperature
sensor
IN
Load
Logic
ESD
miniPROFET
GND
Load GND
Signal GND
Pin
Symbol
Function
1
GND
Logic ground
2
IN
3
Vbb
Positive power supply voltage
4
NC
not connected
5
OUT
Output to the load
TAB
Vbb
Positive power supply voltage
Input, activates the power switch in case of logic high signal
Pin configuration
Top view
Tab = VBB
1
2
GND IN
(3)
4
5
NC OUT
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BTS 452 T
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Supply voltage
Vbb
52
Supply voltage for full short circuit protection
Vbb(SC)
50
Continuous input voltage
VIN
-10 ... +16
Load current (Short - circuit current, see page 5)
IL
self limited
Current through input pin (DC)
I IN
±5
mA
Operating temperature
Tj
-40 ...+150
°C
Storage temperature
T stg
-55 ... +150
Power dissipation 1)
Ptot
41.6
W
Inductive load switch-off energy dissipation 1)2)
EAS
150
mJ
V
A
single pulse, (see page 8)
Tj =150 °C, IL = 1 A
Load dump protection 2) VLoadDump3)= VA + VS
V
VLoaddump
RI=2Ω, td=400ms, VIN= low or high, VA=13,5V
RL = 13.5 Ω
73.5
RL = 27 Ω
88.5
kV
Electrostatic discharge voltage (Human Body Model) VESD
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
±1
all other pins
±5
Thermal Characteristics
junction - case:
RthJC
-
-
3
K/W
Thermal resistance @ min. footprint
Rth(JA)
-
80
-
K/W
Thermal resistance @ 6 cm 2 cooling area 1)
Rth(JA)
-
45
60
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2not subject to production test, specified by design
3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
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BTS 452 T
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = -40...150°C, Vbb = 12..42V, unless otherwise specified
Values
min.
typ.
Unit
max.
Load Switching Capabilities and Characteristics
On-state resistance
RON
mΩ
Tj = 25 °C, IL = 1 A, V bb = 9...52 V
-
150
200
Tj = 150 °C
-
270
380
1.8
2.2
-
A
µs
Nominal load current; Device on PCB 1)
I L(ISO)
TC = 85 °C, VON = 0.5 V
to 90% VOUT
t on
-
80
180
to 10% VOUT
t off
-
80
200
dV/dt on
-
0.7
2
-dV/dt off
-
0.9
2
Operating voltage
Vbb(on)
6
-
52
Undervoltage shutdown of charge pump
Vbb(under)
Tj = -40...+85 °C
-
-
4
Tj = 150 °C
-
-
5.5
-
4
5.5
Turn-on time
RL = 47 Ω
Turn-off time
RL = 47 Ω
Slew rate on
10 to 30% VOUT ,
V/µs
RL = 47 Ω, V bb = 13.5 V
Slew rate off
70 to 40% V OUT,
RL = 47 Ω, V bb = 13.5 V
Operating Parameters
Undervoltage restart of charge pump
Vbb(u cp)
Standby current
Ibb(off)
µA
Tj = -40...+85 °C, VIN = low
-
-
15
Tj = +150 °C2) , VIN = low
-
-
18
IL(off)
-
-
5
IGND
-
0.8
2
Leakage output current (included in Ibb(off))
V
VIN = low
Operating current
mA
VIN = high
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2higher current due temperature sensor
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BTS 452 T
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = -40...150°C, Vbb = 12..42V, unless otherwise specified
Values
min.
typ.
Unit
max.
Protection Functions1)
Initial peak short circuit current limit (pin 3 to 5)
A
I L(SCp)
Tj = -40 °C, Vbb = 20 V, tm = 150 µs
-
-
9
Tj = 25 °C
-
6.5
-
Tj = 150 °C
4
-
-
Tj = -40...+150 °C, Vbb > 40 V , ( see page 11 )
-
5 2)
-
Tj = Tjt (see timing diagrams)
Vbb < 40 V
-
6
-
Vbb > 40 V
-
4.5
-
VON(CL)
59
63
-
Vbb(AZ)
62
-
-
Thermal overload trip temperature
T jt
150
-
-
°C
Thermal hysteresis
∆Tjt
-
10
-
K
Reverse battery 4)
-Vbb
-
-
52
V
Drain-source diode voltage (VOUT > Vbb)
-VON
-
600
-
Repetitive short circuit current limit
I L(SCr)
Output clamp (inductive load switch off)
V
at VOUT = Vbb - VON(CL),
Ibb = 4 mA
Overvoltage protection 3)
Ibb = 4 mA
Reverse Battery
mV
Tj = 150 °C
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation .
2not subject to production test, specified by design
3 see also VON(CL) in circuit diagram on page 7
4Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).
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BTS 452 T
Parameter and Conditions
Symbol
at Tj = -40...150°C, Vbb = 12..42V, unless otherwise specified
Values
Unit
min.
typ.
max.
Input
Input turn-on threshold voltage
VIN(T+)
-
-
2.2
Input turn-off threshold voltage
VIN(T-)
0.8
-
-
Input threshold hysteresis
∆V IN(T)
-
0.4
-
Off state input current
I IN(off)
1
-
25
I IN(on)
3
-
25
RI
2
3.5
5
V
µA
VIN = 0.7 V
On state input current
VIN = 5 V
Input resistance (see page 7)
Page 6
kΩ
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BTS 452 T
Terms
Inductive and overvoltage output clamp
Ibb
+ V bb
V
Z
Vbb
V
I IN
IL
IN
PROFET
ON
VON
OUT
OUT
V
GND
GND
IN
V
bb
R
IGND
VOUT
GND
V ON clamped to 59V min.
Input circuit (ESD protection)
R
IN
Overvoltage protection of logic part
+ V bb
I
V
ESD- ZD I
I
IN
I
Z2
RI
L o gic
GND
V
Z1
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
GND
R GN D
S ignal GND
VZ1 =6.1V typ., VZ2 =Vbb(AZ) =62V min.,
Reverse battery protection
RI=3.5 kΩ typ., RGND=150Ω
- V bb
Internal output pull down
Logic
IN
RI
OUT
V
Power
Inverse
Diode
bb
GND
RL
R GND
Signal GND
V
Power GND
RGND=150Ω, RI=3.5kΩ typ.,
R
Temperature protection is not active during
inverse current
OUT
O
S ignal G N D
RO = 200 kΩ typ.
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BTS 452 T
Vbb disconnect with charged inductive
GND disconnect
load
Vbb
Vbb
IN
high
OUT
PROFET
IN
bb
V
OUT
GND
GND
V
PROFET
V
GND
IN
V
bb
GND disconnect with GND pull up
Inductive Load switch-off energy
dissipation
Vbb
IN
PROFET
OUT
E bb
E AS
GND
E Load
Vbb
V
bb
V
IN
V
GND
IN
PROFET
OUT
L
=
GND
ZL
{
R
EL
ER
L
Energy stored in load inductance: EL = ½ * L * IL2
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
EAS = Ebb + EL - ER = VON(CL) * iL(t) dt,
with an approximate solution for RL > 0Ω:
E AS =
Page 8
IL * R L
IL * L
)
* ( V b b + | V O U T ( C L )| ) * ln (1 +
| V O U T ( C L )|
2 * RL
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BTS 452 T
Typ. transient thermal impedance
Typ. transient thermal impedance
ZthJA=f(tp) @ 6cm 2 heatsink area
Z thJA=f(tp) @ min. footprint
Parameter: D=tp/T
Parameter: D=tp/T
10
2
K/W
10 2
D=0.5
K/W
D=0.5
D=0.2
10 1
D=0.2
10 1
D=0.05
10 0
D=0.02
D=0.1
D=0.05
Z thJA
ZthJA
D=0.1
D=0.02
10 0
D=0.01
D=0.01
10 -1
10 -1
D=0
10 -2 -7 -6 -5 -4 -3 -2 -1 0
1
2
10 10 10 10 10 10 10 10 10 10
s
10
D=0
10 -2 -7 -6 -5 -4 -3 -2 -1 0
1
2
10 10 10 10 10 10 10 10 10 10
4
tp
10
V
Vbb
50
tp
Typ. on-state resistance
Typ. on-state resistance
RON = f(Tj) ; Vbb = 13,5V ; Vin = high
RON = f(V bb); IL = 1 A ; Vin = high
400
300
mΩ
mΩ
150°C
RON
300
RON
s
200
250
200
150
25°C
150
100
-40°C
100
50
0
-40 -20
50
0
20
40
60
80 100 120
°C
Tj
160
Page 9
0
0
5
10
15
20
25
30
35
40
2004-01-27
4
BTS 452 T
Typ. turn on time
Typ. turn off time
ton = f(Tj ); RL = 47Ω
toff = f(Tj); RL = 47Ω
160
160
µs
µs
9V
120
13.5V
100
80
toff
t on
120
100
80
42V
60
60
40
40
20
20
0
-40 -20
0
20
40
60
80 100 120
°C
Tj
9...42V
0
-40 -20
160
0
20
40
60
Typ. slew rate on
Typ. slew rate off
dV/dton = f(T j) ; RL = 47 Ω
dV/dtoff = f(Tj); R L = 47 Ω
2
80 100 120
°C
Tj
160
3.5
V/µs
V/µs
-dV
dtoff
dV
dton
1.6
1.4
1.2
2.5
2
1
42V
1.5
0.8
42V
0.6
1
13.5V
0.4
9V
13.5V
9V
0.5
0.2
0
-40 -20
0
20
40
60
80 100 120
°C
Tj
0
-40 -20
160
Page 10
0
20
40
60
80 100 120
°C
Tj
160
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BTS 452 T
Typ. standby current
Typ. leakage current
Ibb(off) = f(Tj ) ; Vbb = 42V ; VIN = low
I L(off) = f(Tj) ; Vbb = 42V ; VIN = low
10
2.5
µA
I L(off)
I bb(off)
µA
6
1.5
4
1
2
0.5
0
-40 -20
0
20
40
60
80 100 120
°C
Tj
0
-40 -20
160
0
20
40
60
80 100 120
°C
Tj
160
Typ. initial peak short circuit current limit
Typ. initial short circuit shutdown time
IL(SCp) = f(Vbb)
toff(SC) = f(Tj,start) ; Vbb = 20V
10
6
ms
-40°C
toff(SC)
IL(SCp)
A
25°C
6
150°C
4
3
4
2
2
0
0
1
10
20
30
40
0
-40 -20
60
V
Vbb
Page 11
0
20
40
60
80 100 120
°C
Tj
160
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BTS 452 T
Typ. input current
Typ. input current
IIN(on/off) = f(Tj); Vbb = 13,5V; VIN = low/high
I IN = f(VIN); V bb = 13.5V
VINlow ≤ 0,7V; VINhigh = 5V
50
12
µA
µA
8
IIN
IIN
-40...25°C
150°C
30
on
6
20
off
4
10
2
0
-40 -20
0
20
40
60
80 100 120
°C
Tj
0
0
160
1
2
3
4
5
Typ. input threshold voltage
Typ. input threshold voltage
VIN(th) = f(Tj ) ; Vbb = 13,5V
VIN(th) = f(V bb) ; Tj = 25°C
2
8
V
on
on
1.6
off
1.4
1.2
V IN(th)
1.6
V IN(th)
V
VIN
2
V
1.4
1
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
20
40
60
80 100 120
°C
Tj
0
0
160
off
1.2
1
0
-40 -20
6
10
20
30
50
V
Vbb
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BTS 452 T
Maximum allowable load inductance
Maximum allowable inductive switch-off
for a single switch off
energy, single pulse
L = f(IL); Tjstart =150°C, RL=0Ω
EAS = f(I L); T jstart = 150°C, Vbb = 13,5V
13.5V
4500
1200
mH
mJ
3500
L
EAS
3000
800
2500
42V
600
2000
1500
400
1000
200
500
0
0
0.25
0.5
0.75
1
1.25
1.5
A
IL
0
0
2
Page 13
0.25
0.5
0.75
1
1.25
1.5
A
IL
2
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BTS 452 T
Timing diagrams
Figure 2b: Switching a lamp,
Figure 1a: Vbb turn on:
IN
IN
OUT
V
bb
I
V
OUT
L
t
t
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition
Figure 2c: Switching an inductive load
IN
IN
V
V OUT
OUT
90%
t on
d V /d to n
10%
d V /d to f f
t
o ff
I
IL
L
t
t
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BTS 452 T
Figure 3a: Turn on into short circuit,
shut down by overtemperature, restart by cooling
Figure 5: Undervoltage restart of charge pump
IN
Vo n
t
I
L
I
L(SCp)
V b b( u c p )
I
L(SCr)
Vbb( under )
tm
t off(SC)
Vbb
t
Heating up of the chip may require several milliseconds, depending
on external conditions.
Figure 4: Overtemperature:
Reset if Tj < T jt
IN
V
OUT
T
J
t
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BTS 452 T
Package and ordering code
all dimensions in mm
Package:
Ordering code:
P-TO252-5-11
Q67060-S7406
6.5 +0.15
-0.05
A
1)
2.3 +0.05
-0.10
0.9 +0.20
-0.01
0...0.15
0.5 +0.08
-0.04
5 x 0.6 ±0.1
1.14
4.56
0.5 +0.08
-0.04
0.51 MIN.
0.15 MAX.
per side
B
(5)
0.8 ±0.15
(4.24) 1 ±0.1
9.98 ±0.5
6.22 -0.2
5.7 MAX.
0.1 B
0.25
M
A B
Printed circuit board (FR4, 1.5mm thick, one
layer 70µm, 6cm2 active heatsink area ) as
1) Includes mold flashes on each side.
All metal surfaces tin plated, except area of cut.
a reference for max. power dissipation Ptot
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
nominal load current IL(nom) and thermal
resistance R thja
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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