Preliminary Data SPD 08N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS(on) 0.3 Ω Continuous drain current ID 8.4 A Enhancement mode • Avalanche rated • dv/dt rated Type Package Ordering Code Packaging SPD08N10 P-TO252 Q67040-S4126-A2 Tape and Reel SPU08N10 P-TO251 Q67040-S4118-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current Pin 1 G Value TC = 25 ˚C 8.4 TC = 100 ˚C 5.4 IDpulse D S Unit A ID Pulsed drain current Pin 2 Pin 3 33.6 TC = 25 ˚C Avalanche energy, single pulse EAS 30 mJ Avalanche energy, periodic limited by Tjmax EAR 4 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS V Power dissipation Ptot ±20 40 -55... +175 ˚C ID = 8.4 A, VDD = 25 V, R GS = 25 Ω kV/µs IS = 8.4 A, V DS = 80 V, di/dt = 200 A/µs W TC = 25 ˚C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Data Sheet 55/150/56 1 05.99 SPD 08N10 Thermal Characteristics Symbol Parameter Values min. typ. Unit max. Characteristics Thermal resistance, junction - case RthJC - 3.1 Thermal resistance, junction - ambient, leded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 cooling area1) - - 50 K/W Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - Gate threshold voltage, VGS = VDS ID = 1 mA VGS(th) 2.1 3 4 Zero gate voltage drain current I DSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA µA VDS = 100 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 100 V, VGS = 0 V, Tj = 125 ˚C - - 100 - 10 100 Gate-source leakage current I GSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 10 V, ID = 5.4 A - 0.25 0.3 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 SPD 08N10 Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. g fs 2 4.5 - S Ciss - 340 425 pF Coss - 80 100 Crss - 30 40 td(on) - 13 20 tr - 40 60 td(off) - 50 75 tf - 35 55 Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 8.4 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Rise time VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Fall time VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Data Sheet 3 05.99 SPD 08N10 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Q gs - 1.8 2.7 Q gd - 6.65 10 Qg - 12.6 18.9 V(plateau) - 5.93 - V IS - - 8.4 A I SM - - 33.6 VSD - 1.2 1.6 V t rr - 90 135 ns Q rr - 0.35 0.55 µC Dynamic Characteristics Gate to source charge nC VDD = 80 V, ID = 8.4 A Gate to drain charge VDD = 80 V, ID = 8.4 A Gate charge total VDD = 80 V, ID = 8.4 A, VGS = 0 to 10 V Gate plateau voltage VDD = 80 V, ID = 8.4 A Reverse Diode Inverse diode continuous forward current TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 16.8 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 SPD 08N10 Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V SPD08N10 SPD08N10 45 10 W A 8 35 ID Ptot 7 30 6 25 5 20 4 15 3 10 2 5 1 0 0 20 40 60 80 100 120 ˚C 0 0 160 20 40 60 80 100 120 TC Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 ˚C parameter : D = tp /T 10 SPD08N10 10 1 SPD08N10 K/W tp = 15.0µs DS /I D A 160 TC Safe operating area 2 ˚C = V 10 0 n) Z thJC (o DS R ID 10 1 100 µs 1 ms 10 -1 D = 0.50 0.20 10 ms 10 0 0.10 0.05 10 -2 DC 10 -1 0 10 10 1 10 2 V 10 10 -3 -7 10 3 VDS Data Sheet 0.02 single pulse 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s 10 0 tp 5 05.99 SPD 08N10 Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS SPD08N10 SPD08N10 Ptot = 40W A 1.0 l kj Ω i VGS [V] a 16 h 14 ID 4.5 c 5.0 d 5.5 12 e 6.0 f 6.5 10 f g 7.0 h 7.5 i 8.0 g 8 e 6 d 4 6 j 9.0 k 10.0 l 20.0 g h 0.4 i 0.3 k j l 0.2 V 8 f 0.5 a 4 e 0.6 0.1 2 d 0.7 b 0 0 c 0.8 c 2 b 4.0 b RDS(on) 20 12 VGS [V] = b 4.5 0.0 0 VDS c 5.0 2 d 5.5 e f 6.0 6.5 4 6 g 7.0 8 h i 7.5 8.0 10 j 9.0 12 k l 10.0 20.0 A 14 17 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 µs gfs = f(ID ); Tj = 25˚C VDS ≥ 2 x I D x RDS(on) max parameter: gfs 6 30 A S 24 22 4 gf s ID 20 18 16 3 14 12 2 10 8 6 1 4 2 0 0 1 2 3 4 5 6 7 8 V 0 0 10 VGS Data Sheet 2 4 6 8 10 12 14 16 A 20 ID 6 05.99 SPD 08N10 Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 1 mA parameter : ID = 5.4 A, VGS = 10 V SPD08N10 5.0 V 1.0 Ω 4.4 4.0 VGS(th) RDS(on) 0.8 0.7 0.6 3.6 max 3.2 2.8 2.4 0.5 0.4 98% 2.0 typ 1.6 typ min 0.3 1.2 0.2 0.8 0.1 0.4 0.0 -60 0.0 -60 -20 20 60 ˚C 100 -20 20 60 100 180 ˚C 160 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs 10 3 10 2 SPD08N10 A pF Ciss C IF 10 1 10 2 Coss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Crss Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 30 V 10 -1 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 SPD 08N10 Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 8.4 A, VDD = 25 V RGS = 25 Ω VGS = f (QGate ) parameter: ID puls = 8.4 A SPD08N10 35 16 V mJ 12 EAS VGS 25 20 10 0,2 VDS max 0,8 VDS max 8 15 6 10 4 5 2 0 20 40 60 80 100 ˚C 120 0 0 160 Tj 2 4 6 8 10 12 14 16 nC 19 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD08N10 120 V V(BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 ˚C 180 Tj Data Sheet 8 05.99