BUZ 32 H SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Pb-free BUZ 32 H 200 V 9.5 A 0.4 Ω PG-TO-220-3 Yes S Maximum Ratings Parameter Symbol Continuous drain current ID TC = 29 ˚C Pulsed drain current Values Unit A 9.5 IDpuls TC = 25 ˚C 38 Avalanche current,limited by Tjmax IAR 9.5 Avalanche energy,periodic limited by Tjmax EAR 6.5 Avalanche energy, single pulse EAS mJ ID = 9.5 A, VDD = 50 V, RGS = 25 Ω L = 2 mH, Tj = 25 ˚C 120 Gate source voltage VGS Power dissipation Ptot TC = 25 ˚C ± 20 W 75 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1.67 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 ˚C K/W E 55 / 150 / 56 IEC climatic category, DIN IEC 68-1 Rev. 2.4 V Page 1 2009-11-10 BUZ 32 H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage 200 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 200 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 125 ˚C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 6 A Rev. 2.4 nA - Page 2 0.3 0.4 2009-11-10 BUZ 32 H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 6 A Input capacitance 3 pF - 400 530 - 85 130 - 45 70 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 4.6 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 10 15 - 40 60 - 55 75 - 30 40 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rev. 2.4 Page 3 2009-11-10 BUZ 32 H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS A TC = 25 ˚C Inverse diode direct current,pulsed - 38 V 1.4 1.7 trr ns - 200 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Rev. 2.4 - - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge 9.5 VSD VGS = 0 V, IF = 19 A Reverse recovery time - ISM TC = 25 ˚C Inverse diode forward voltage - µC - Page 4 0.6 - 2009-11-10 BUZ 32 H Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 10 80 A W Ptot ID 60 8 7 50 6 5 40 4 30 3 20 2 10 0 0 1 0 20 40 60 80 100 120 ˚C 0 160 20 40 60 80 100 120 Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C ˚C 160 TC TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 10 1 tp = 7.6µs K/W 10 µs A ZthJC DS /I D ID V 100 µs R DS (o n) = 10 1 10 0 1 ms 10 -1 D = 0.50 0.20 10 ms 10 0 0.10 0.05 10 -2 0.02 DC 0.01 single pulse 10 -1 0 10 10 1 10 2 10 -3 -7 10 V VDS Rev. 2.4 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 0 tp Page 5 2009-11-10 BUZ 32 H Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 22 1.3 Ptot = 75W A ID Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS Ω k j l i V [V] GS 18 16 c d e f g h 5.0 1.0 0.9 d 5.5 14 f 12 RDS (on) b 4.5 c g b 1.1 a 4.0 h a 0.8 e 6.0 f 6.5 0.7 g 7.0 10 e 0.6 h 7.5 8 d 6 i 8.0 j 9.0 0.5 k 10.0 l 20.0 c 4 0.4 i 0.3 k j 0.2 VGS [V] = b 2 a 4.0 4.5 0.1 a 0 0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 2 4 6 8 10 12 V 16 0 4 8 12 16 A VDS Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max 13 6.0 A S 11 ID 22 ID 5.0 gfs 10 9 4.5 4.0 8 3.5 7 3.0 6 2.5 5 2.0 4 1.5 3 1.0 2 1 0.5 0 0.0 0 1 2 3 4 5 6 7 8 V 0 10 VGS Rev. 2.4 2 4 6 8 A 12 ID Page 6 2009-11-10 BUZ 32 H Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 6 A, VGS = 10 V 1.3 4.6 Ω V 1.1 RDS (on) 98% 4.0 VGS(th) 1.0 3.6 0.9 3.2 0.8 2.8 0.7 2.4 0.6 2% 2.0 98% 0.5 1.6 typ 0.4 typ 1.2 0.3 0.8 0.2 0.4 0.1 0.0 -60 -20 20 60 100 ˚C 0.0 -60 160 -20 20 60 100 Typ. capacitances ˚C 160 Tj Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss 10 -1 10 0 Tj = 25 ˚C typ Coss Tj = 150 ˚C typ Crss Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V 10 -1 0.0 40 Rev. 2.4 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS Page 7 2009-11-10 BUZ 32 H Avalanche energy EAS = ƒ(Tj) parameter: ID = 9.5 A, VDD = 50 V RGS = 25 Ω, L = 2 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 14 A 130 16 mJ V 110 EAS VGS 100 12 90 10 80 0,8 VDS max 0,2 VDS max 70 8 60 50 6 40 4 30 20 2 10 0 20 0 40 60 80 100 120 ˚C 160 0 Tj 4 8 12 16 20 24 28 32 nC 38 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Rev. 2.4 Page 8 2009-11-10 BUZ 32 H Package Drawing: TO220-3 Rev. 2.4 Page 9 2009-11-10 BUZ 32 H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 Page 10 2009-11-10