New Product Si1499DH Vishay Siliconix P-Channel 1.2-V (G-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b VDS (V) -8 Qg (Typ) 10.5 nC • TrenchFET® Power MOSFET • Ultra-Low On-Resistance RoHS APPLICATIONS COMPLIANT • Load Switch for Portable Devices - Guaranteed Operation at VGS = 1.2 V Critical for Optimized Design and Longer Battery Life SOT-363 SC-70 (6-LEADS) S 1 6 D D 2 5 D G 3 4 S Marking Code BI XX YY D Lot Traceability and Date Code G Part # Code Top View D Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS -8 Gate-Source Voltage VGS ±5 TC = 70 °C TA = 25 °C - 1.6c ID - 1.6a, b, c - 1.6a, b, c TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Currenta, b Maximum Power Dissipationa, b TC = 25 °C TA = 25 °C - - 1.6c IS - 1.3a, b TC = 25 °C 2.78 1.78 PD W 2.5a, b 1a, b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 6.5c TC = 70 °C TA = 25 °C V -1.6c TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b Unit - 55 to 150 Soldering Recommendations (Peak Temperature)c, d °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, d Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t≤5s RthJA 60 80 Steady State RthJF 34 45 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Package limited. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 73338 S-80579-Rev. E, 17-Mar-08 www.vishay.com 1 Si1499DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = - 250 µA -8 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) - 0.35 - 0.8 - 0.55 VDS = 0 V, VGS = ± 5 V ± 100 VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V RDS(on) - 6.5 Forward gfs 0.0622 0.078 VGS = - 2.5 V, ID = - 1.9 A 0.078 0.095 VGS = - 1.8 V, ID = - 0.8 A 0.094 0.115 VGS = - 1.5 V, ID = - 0.5 A 0.118 0.153 VDS = - 4 V, ID = - 2.0 A V nA µA A VGS = - 4.5 V, ID = - 2.0 A VGS = - 1.2 V, ID = - 0.100 A Transconductancea mV/°C - 2.2 VDS = VGS, ID = ± 5 mA IGSS Gate-Source Leakage Drain-Source On-State Resistancea ID = - 250 µA VDS = VGS, ID = - 250 µA V -9 Ω 0.424 8 S Dynamicb Input Capacitance Ciss 650 Output Capacitance Coss Reverse Transfer Capacitance Crss 122 Total Gate Charge Qg 10.5 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 4 V, VGS = 0 V, f = 1 MHz VDS = - 4 V, VGS = - 4.5 V, ID = - 1.6 A pF 220 16 1.3 nC 1.9 9.5 9 14 VDD = - 4 V, RL = 2 Ω ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω 40 60 td(on) tr td(off) Ω f = 1 MHz 50 75 tf 60 90 td(on) 8 15 40 60 VDD = - 4 V, RL = 2 Ω ID ≅ - 2 A, VGEN = - 8 V, Rg = 1 Ω tr td(off) tf 46 70 60 90 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 1.6 - 6.5 IS = - 2.4 A, VGS = 0 V IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C A - 0.7 - 1.2 V 25 38 ns 7 11 nC 9 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73338 S-80579-Rev. E, 17-Mar-08 Si1499DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 TC = - 55 °C VGS = 5 thru 2 V 6 8 I D - Drain Current (A) I D - Drain Current (A) 8 1.5 V 4 25 °C 6 125 °C 4 2 2 1V 0 0.0 0.5 1.0 1.5 0 0.0 2.0 0.5 2.0 2.5 Transfer Characteristics 0.25 1000 0.20 800 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) Output Characteristics VGS = 1.5 V 0.15 VGS = 1.8 V VGS = 2.5 V Ciss 600 400 Coss 200 0.05 VGS = 4.5 V Crss 0 0.00 0 2 4 6 8 0 10 1 2 3 4 5 6 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 7 8 1.6 ID = 2 A ID = 2 A 4 1.4 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.10 1.0 VDS = 4 V 3 VDS = 5.6 V 2 1 VGS = 4.5 V 1.2 VGS = 2.5 V 1.0 0.8 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73338 S-80579-Rev. E, 17-Mar-08 10 12 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1499DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 TJ = 150 °C R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.3 0.2 TJ = 125 °C 0.1 TJ = 25 °C 0.0 0.1 0.0 ID = 2 A 0.4 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 12 0.3 10 ID = 250 µA 8 Power (W) VGS(th) (V) 0.2 0.1 6 TA = 25 °C 0.0 4 - 0.1 2 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 10 µs, 100 µs 1 ms 1 0.1 10 ms 100 ms 1s 10 s TA = 25 °C Single Pulse DC, 100 s 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73338 S-80579-Rev. E, 17-Mar-08 Si1499DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 ID - Drain Current (A) 5 4 3 Package Limited 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 175 * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10-3 10 -2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73338. Document Number: 73338 S-80579-Rev. E, 17-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1