New Product Si5905BDC Vishay Siliconix Dual P-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.080 at VGS = - 4.5 V - 4a 0.117 at VGS = - 2.5 V - 4a 0.170 at VGS = - 1.8 V - 3.5 Qg (Typ) 4 nC • TrenchFET® Power MOSFETs RoHS APPLICATIONS COMPLIANT • Load Switch for portable devices 1206-8 ChipFET® (Dual) 1 S1 S2 S1 D1 G1 D1 S2 D2 G2 D2 Bottom View G1 Marking Code DH XXX G2 Lot Traceability and Date Code Part # Code Ordering Information: Si5905BDC-T1-E3 (Lead (Pb)-free) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit -8 ±8 - 4a - 4a - 3.5b, c - 2.8b, c - 10 - 2.6 - 1.2b, c 3.1 2 1.5b, c 0.94b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t ≤ 5 sec 70 85 Maximum Junction-to-Ambientb, f °C/W 33 40 Maximum Junction-to-Foot (Drain) Steady State RthJF Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 120 °C/W. Document Number: 74650 S-71343-Rev. A, 09-Jul-07 www.vishay.com 1 New Product Si5905BDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = - 250 µA -8 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs V -7 mV/°C 2 - 0.45 - 1.0 V ± 100 nA VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 85 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V - 10 µA A VGS = - 4.5 V, ID = 3.3 A 0.066 0.080 VGS = - 2.5 V, ID = - 2.5 A 0.097 0.117 VGS = - 1.8 V, ID = - 0.6 A 0.140 0.170 VDS = - 4 V, ID = - 3.3 A 8 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 350 VDS = - 4 V, VGS = 0 V, f = 1 MHz pF 140 85 VDS = - 4 V, VGS = - 8 V, ID = - 3.7 A VDS = - 4 V, VGS = - 4.5 V, ID = - 3.7 A 7 11 4 6 0.65 0.75 f = 1 MHz td(on) Ω 5.5 10 15 25 40 20 30 tf 7 15 td(on) 5 10 10 15 tr td(off) tr td(off) nC VDD = - 4 V, RL = 1.3 Ω ID ≅ - 3 A, VGEN = - 4.5 V, Rg = 1 Ω VDD = - 4 V, RL = - 1.3 Ω ID ≅ - 3 A, VGEN = - 8 V, Rg = 1 Ω tf 17 30 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C -4 - 10 IS = - 3 A, VGS = 0 V - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 55 85 ns Body Diode Reverse Recovery Charge Qrr 25 50 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 3 A, di/dt = 100 A/µs, TJ = 25 °C 14 41 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74650 S-71343-Rev. A, 09-Jul-07 New Product Si5905BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 5 VGS = 5 thru 2.5 V 8 4 I D - Drain Current (A) I D - Drain Current (A) 2V 6 4 1.5 V 3 2 TC = 125 °C 2 1 TC = 25 °C 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 600 0.30 450 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 0.25 0.20 VGS = 1.8 V VGS = 2.5 V 0.15 0.10 VGS = 4.5 V Ciss 300 Coss 150 0.05 Crss 0 0.00 0 2 4 6 8 0 10 2 6 8 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On Resistance vs. Drain Current Capacitance 8 1.5 ID = 3.3 A ID = 3.7 A 1.4 VDS = 4 V 4 VDS = 6.4 V 2 1.3 (Normalized) 6 r DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4 VGS = 4.5 V, 2.5 V, 1.8 V 1.2 1.1 1.0 0.9 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74650 S-71343-Rev. A, 09-Jul-07 8 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si5905BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.30 10 ID = 3.3 A r DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.25 TJ = 150 °C TJ = 25 °C 0.20 0.15 TA = 125 °C 0.10 TA = 25 °C 0.05 0.00 0.0 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temp On-Resistance vs. Gate-to-Source Voltage 50 0.7 40 0.6 Power (W) VGS(th) (V) ID = 250 µA 0.5 30 20 0.4 10 0.3 - 50 - 25 0 25 50 75 100 125 0 0.0001 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (sec) Threshold Voltage Single Pulse Power 10 *Limited by rDS(on) I D - Drain Current (A) 1 ms 1 10 ms 100 ms 1s 10 s dc 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 *VGS 1 10 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74650 S-71343-Rev. A, 09-Jul-07 New Product Si5905BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 4 3 Package Limited Power Dissipation (W) I D - Drain Current (A) 5 4 3 2 2 1 1 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74650 S-71343-Rev. A, 09-Jul-07 www.vishay.com 5 New Product Si5905BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74650. www.vishay.com 6 Document Number: 74650 S-71343-Rev. A, 09-Jul-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1