Si3460BDV Vishay Siliconix New Product N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 • TrenchFET® Power MOSFET Qg (Typ) APPLICATIONS RoHS COMPLIANT • Load Switch for Portable Applications • Load Switch for Low Voltage Bus 9 nC TSOP-6 Top View D 1 6 D D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code G 3 4 AF S XXX Lot Traceability and Date Code G (3) Part # Code 2.85 mm (4) S Ordering Information: Si3460BDV-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Limit 20 ±8 8a 7.1 6.7b, c 5.4b, c 20 2.9 1.7b, c 3.5 2.2 2b, c 1.3b, c - 55 to 150 260 ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current IS PD TJ, Tstg Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Symbol RthJA RthJF Typical 50 30 Maximum 62.5 36 Unit °C/W Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under steady state conditions is 110 °C/W. Document Number: 74412 S-70187-Rev. A, 29-Jan-07 www.vishay.com 1 Si3460BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 250 µA 20 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS /TJ V 22.5 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th) /TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.0 V IGSS VDS = 0 V, VGS = ± 8 V ± 100 ns VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C 10 Gate-Source Leakage - 2.9 0.45 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.1 A 0.023 0.027 Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 4.7 A 0.027 0.032 VGS = 1.8 V, ID = 2.5 A 0.033 0.040 VDS = 10 V, ID = 5.1 A 22 Forward Transconductancea gfs µA A 20 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time 860 VDS = 10 V, VGS = 0 V, f = 1 MHz 110 VDS = 10 V, VGS = 8 V, ID = 8 A 16 24 9 13.5 65 VDS = 10 V, VGS = 4.5 V, ID = 8 A td(off) 1.4 Ω 3.2 7 15 VDD = 10 V, RL = 1.9 Ω ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω 60 90 25 40 tf 6 10 td(on) 5 10 15 25 tr td(off) nC 1.4 f = 1 MHz td(on) tr pF VDD = 10 V, RL = 1.9 Ω ID ≅ 5.4 A, VGEN = 8 V, Rg = 1 Ω tf 25 40 5 10 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 8 20 IS = 5.4 A, VGS = 0 V 0.8 1.2 A V Body Diode Reverse Recovery Time trr 20 40 ns Body Diode Reverse Recovery Charge Qrr 9 20 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 5.4 A, di/dt = 100 A/µs, TJ = 25 °C 12 ns 8 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74412 S-70187-Rev. A, 29-Jan-07 Si3460BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 20 VGS = 5 thru 2 V 8 ID - Drain Current (A) I D - Drain Current (A) 15 10 1.5 V 5 6 4 TC = 125 °C 2 0 0.0 0.4 0.8 1.2 1.6 0 0.0 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 1.8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1200 0.060 VGS = 1.8 V 0.050 C - Capacitance (pF) rDS(on) - On-Resistance (Ω) - 55 °C 25 °C 1V 0.040 VGS = 2.5 V 0.030 Ciss 900 600 300 Coss VGS = 4.5 V 0.020 0 5 10 15 Crss 0 0 20 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 1.8 VDS = 10 V ID = 8 A 7 1.6 6 rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 5 4 VDS = 16 V ID = 8 A 3 2 ID = 5.1 A 1.4 1.2 1.0 0.8 1 0 0 3 Document Number: 74412 S-70187-Rev. A, 29-Jan-07 6 9 12 15 18 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 Si3460BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.08 rDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.07 T J = 150 °C 10 T J = 25 °C ID = 5.1 A 25 °C 0.06 0.05 ID = 5.1 A 125 °C 0.04 0.03 0.02 0.01 1 0.00 0 0.4 0.2 0.6 0.8 1 0 1.2 1 VSD - Source-to-Drain Voltage (V) 3 4 5 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.8 50 ID = 250 µA 0.7 40 0.6 Power (W) V GS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) 0.5 30 20 0.4 10 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 10-1 1 10 100 600 Time (sec) TJ - Temperature (°C) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 *rDS(on) Limited I D - Drain Current (A) 10 10 s 1 1s 0.1 100 ms 10 ms 1 ms dc TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74412 S-70187-Rev. A, 29-Jan-07 Si3460BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 10 8 Power Dissipation (W) Drain Current (A) 3 Package Limited 6 4 2 1 2 0 0 0 25 50 75 100 Foot (Drain) Temperature ( C) Current Derating* 125 150 25 50 75 100 125 150 Foot (Drain) Temperature ( C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74412 S-70187-Rev. A, 29-Jan-07 www.vishay.com 5 Si3460BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74412. www.vishay.com 6 Document Number: 74412 S-70187-Rev. A, 29-Jan-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1