New Product Si3447CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 VDS (V) - 12 • TrenchFET® Power MOSFET • PWM Optimized Qg (Typ) RoHS APPLICATIONS 12 nC COMPLIANT • Load Switch • PA Switch TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G Marking Code 3 AO 4 XXX Lot Traceability and Date Code Part # Code 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3447CDV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 12 ±8 - 7.8 - 6.2 ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current V - 6.3b, c - 5.0b, c - 20 - 2.5 IDM Pulsed Drain Current Unit IS A - 1.67b, c 3.0 2.0 PD W 2.0b, c 1.3b, c - 55 to 150 TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter b, d Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 55 34 Maximum 62.5 41 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. Document Number: 69784 S-80189-Rev. A, 04-Feb-08 www.vishay.com 1 New Product Si3447CDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS , ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs V - 15 mV/°C 2.5 - 0.4 - 1.0 V ± 100 nA VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V - 20 µA A VGS = - 4.5 V, ID = - 6.3 A 0.03 0.036 VGS = - 2.5 V, ID = - 5.3 A 0.041 0.050 VGS = - 1.8 V, ID = - 1.5 A 0.055 0.068 VDS = - 6 V, ID = - 6.3 A 20 VDS = - 6 V, VGS = 0 V, f = 1 MHz 260 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 910 VDS = - 6 V, VGS = - 8 V, ID = - 6.3 A Rg Gate Resistance VDS = - 6 V, VGS = - 4.5 V, ID = - 6.3 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time f = 1 MHz VDD = - 6 V, RL = 1.2 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω nC Ω 6 20 30 40 60 55 20 30 td(on) 10 15 15 25 35 55 15 25 VDD = - 6 V, RL = 1.2 Ω ID ≅ - 5 A, VGEN = - 8 V, Rg = 1 Ω tf Fall Time 18 1.6 tf td(off) Turn-Off Delay Time 30 12 35 tr Rise Time 20 3.4 td(on) Turn-On Delay Time pF 220 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C - 2.5 ISM VSD - 20 IS = - 5 A - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 35 55 ns Body Diode Reverse Recovery Charge Qrr 20 30 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 5 A, di/dt = 100 A/µs, TJ = 25 °C 16 19 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69784 S-80189-Rev. A, 04-Feb-08 New Product Si3447CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 VGS = 5 thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 VGS = 1.5 V 6 4 TC = 25 °C 4 2 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 2.0 Transfer Characteristics 0.14 1800 0.12 1500 0.10 Ciss C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.08 VGS = 1.8 V 0.06 VGS = 2.5 V 0.04 1200 900 600 Coss 300 VGS = 4.5 V 0.02 Crss 0 0 0 4 8 12 16 20 0 3 6 9 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 12 1.5 ID = 6.3 A 1.4 VDS = 6 V 6 VDS = 9.6 V 4 2 VGS = 4.5 V, 2.5 V, 1.8 V 1.3 (Normalized) ID = 6.3 A r DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.0 1.2 1.1 1.0 0.9 0.8 0 0 5 Document Number: 69784 S-80189-Rev. A, 04-Feb-08 10 15 20 25 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 New Product Si3447CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.15 TJ = 150 °C 10 0.12 r DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 6.3 A TJ = 25 °C 0.09 TA = 125 °C 0.06 0.03 TA = 25 °C 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 25 0.8 0.7 20 ID = 250 µA Power (W) V GS(th) (V) 0.6 0.5 15 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Single Pulse Power Threshold Voltage 100 Limited by rDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1 s, 10 s DC 0.1 BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 69784 S-80189-Rev. A, 04-Feb-08 New Product Si3447CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 4 8 Package Limited Power (W) I D - Drain Current (A) 3 6 4 2 1 2 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Foot 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69784 S-80189-Rev. A, 04-Feb-08 www.vishay.com 5 New Product Si3447CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69784. www.vishay.com 6 Document Number: 69784 S-80189-Rev. A, 04-Feb-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1