Si1970DH Vishay Siliconix New Product Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.225 at VGS = 4.5 V 1.3a 0.345 at VGS = 2.5 V 1.3a • TrenchFET® Power MOSFET Qg (Typ) APPLICATIONS 1.15 nC SOT-363 SC-70 (6-LEADS) S1 1 6 RoHS • Load switch for portable applications COMPLIANT D1 D2 D1 Marking Code D2 5 2 3 4 G2 CD XX G1 YY G1 G2 Lot Traceability and Date Code S2 S1 S2 N-Channel MOSFET N-Channel MOSFET Part # Code Top View Ordering Information: Si1970DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Limit Drain-Source Voltage Gate-Source Voltage VGS ± 12 TC = 70 °C TA = 25 °C 1.3a ID 1.3a TA = 70 °C 1.1 IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C Maximum Power Dissipation TA = 25 °C 4 IS 0.61c 1.25 0.8 PD Soldering Recommendations (Peak W 0.74b, c 0.47b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 1.0 TC = 25 °C TC = 70 °C V 1.3a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit 30 - 55 to 150 Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, f Maximum Maximum Junction-to-Foot (Drain) Symbol RthJA Typical Maximum t ≤ 5 sec 130 170 Steady State RthJF 80 100 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 220 °C/W. Document Number: 74343 S-62441-Rev. A, 27-Nov-06 www.vishay.com 1 Si1970DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 250 µA 30 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 25 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.6 V IGSS VDS = 0 V, VGS = ± 12 V ± 100 ns VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VDS ≤ 5 V, VGS = 4.5 V - 3.2 0.6 4 µA A VGS = 4.5 V, ID = 1.2 A 0.185 0.225 VGS = 2.5 V, ID = 0.29 A 0.285 0.345 VDS = 15 V, ID = 1.2 A 2.5 VDS = 15 V, VGS = 0 V, f = 1 MHz 17 VDS = 15 V, VGS = 10 V, ID = 1.4 A 2.5 3.8 1.15 1.7 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time 95 pF 9 VDS = 10 V, VGS = 4.5 V, ID = 1.4 A 0.4 0.3 Ω f = 1 MHz 4 9 15 VDD = 15 V, RL = 13.6 Ω ID ≅ 1.1 A, VGEN = 4.5 V, Rg = 1 Ω 20 30 15 25 tf 15 25 td(on) 5 10 10 15 td(on) tr td(off) tr td(off) nC VDD = 15 V, RL = 13.6 Ω ID ≅ 1.1 A, VGEN = 10 V, Rg = 1 Ω tr 10 15 6 12 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 1 4 IS = 1.1 A, VGS = 0 V A 0.85 1.2 Body Diode Reverse Recovery Time trr 20 40 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 1.1 A, di/dt = 100 A/µs, TJ = 25 °C 16.5 3.5 V ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74343 S-62441-Rev. A, 27-Nov-06 Si1970DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 2.0 VGS = 5 V thru 3.5 V I D - Drain Current (A) I D - Drain Current (A) 1.6 VGS = 3 V 3 2 VGS = 2.5 V 1 1.2 0.8 TC = 25 °C 0.4 VGS = 2 V TC = 125 °C VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0.0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 25 30 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.6 150 0.5 120 C - Capacitance (pF) rDS(on) - On-Resistance (Ω) 1.0 0.4 VGS = 2.5 V 0.3 VGS = 4.5 V 0.2 Ciss 90 60 Coss 30 0.1 0 1 2 3 Crss 0 4 0 5 ID - Drain Current (A) 10 15 20 VDS - Drain-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 VGS = 4.5 V, I D = 1.4 A 1.6 8 VDS = 15 V rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 1.4 A 6 VDS = 24 V 4 2 1.4 1.2 VGS = 2.5 V, ID = 0.3 A 1.0 0.8 0 0.0 0.5 1.0 1.5 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74343 S-62441-Rev. A, 27-Nov-06 2.0 2.5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1970DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 10 rDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 1.4 A TJ = 150 °C TJ = 25 °C 1.0 0.6 TA = 125 °C 0.4 0.2 TA = 25 °C 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Forward Diode Voltage On-Resistance vs. Gate-Source Voltage 1.5 5 1.3 4 ID = 250 µA 3 Power (W) V GS(th) Variance (V) 2 1.1 0.9 2 1 0.7 0.5 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 TJ - Temperature (°C) Time (sec) Threshold Voltage Single Pulse Power 100 600 10 I D - Drain Current (A) *Limited by rDS(on) 100 µs 1 1 ms 10 ms 0.1 T A = 25 °C Single Pulse 0.01 0.1 *VGS 1 100 ms 1s 10 s DC BVDSS Limited 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74343 S-62441-Rev. A, 27-Nov-06 Si1970DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 1.4 1.2 Power Dissipation (W) I D - Drain Current (A) 1.6 Package Limited 1.2 0.8 1.0 0.8 0.6 0.4 0.4 0.2 0.0 0.0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) T C - Case Temperature (°C) Current Derating* Power Derating 150 *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 170 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 74343 S-62441-Rev. A, 27-Nov-06 www.vishay.com 5 Si1970DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74343. www.vishay.com 6 Document Number: 74343 S-62441-Rev. 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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1