TSUS520. Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS520. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors. 94 8389 Features Applications • • • • • Infrared remote control and free air transmission systems with low forward voltage and low cost requirements in combination with PIN photodiodes or phototransistors. • • • • • • • Low cost emitter Low forward voltage High radiant power and radiant intensity e2 Suitable for DC and high pulse current operation Standard T-1¾ (∅ 5 mm) package Angle of half intensity ϕ = ± 15° Peak wavelength λp = 950 nm High reliability Good spectral matching to Si photodetectors Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage Forward current Symbol Value Unit VR 5 V IF 150 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 300 mA Surge forward current tp = 100 µs IFSM 2.5 A Power dissipation PV 210 mW Junction temperature Tj 100 °C Tamb - 55 to + 100 °C Tstg - 55 to + 100 °C Tsd 260 °C RthJA 375 K/W Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient Document Number 81055 Rev. 2.0, 23-Feb-07 t ≤ 5 sec, 2 mm from case www.vishay.com 1 TSUS520. Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage IF = 100 mA, tp = 20 ms Temp. coefficient of VF IF = 100 mA Symbol Typ. Max VF 1.3 1.7 TKVF - 1.3 Reverse current VR = 5 V IR Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj Min Unit V mV/K 100 µA 30 pF Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Temp. coefficient of φe Test condition Symbol Min Typ. Max Unit IF = 20 mA TKφe - 0.8 %/K ϕ ± 15 deg Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA Δλ 50 nm Temp. coefficient of λp IF = 100 mA TKλp 0.2 nm/K Rise time IF = 100 mA tr 800 ns IF = 1.5 A tr 400 ns IF = 100 mA tf 800 ns IF = 1.5 A tf 400 ns ∅ 3.8 mm Angle of half intensity Fall time Virtual source diameter Type Dedicated Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Radiant intensity Test condition IF = 1.5 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 µs Radiant power www.vishay.com 2 IF = 100 mA, tp = 20 ms Part Symbol Typ. Max Unit TSUS5200 VF Min 2.2 3.4 V TSUS5201 VF 2.2 3.4 V TSUS5202 VF 2.2 2.7 V TSUS5200 Ie 10 20 50 mW/sr TSUS5201 Ie 15 25 50 mW/sr TSUS5202 Ie 20 30 50 mW/sr TSUS5200 Ie 95 180 mW/sr TSUS5201 Ie 120 230 mW/sr TSUS5202 Ie 170 280 mW/sr TSUS5200 φe 13 mW TSUS5201 φe 14 mW TSUS5202 φe 15 mW Document Number 81055 Rev. 2.0, 23-Feb-07 TSUS520. Vishay Semiconductors Typical Characteristics 250 10 4 200 10 3 I F - Forward Current (mA) PV - Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 150 R thJA 100 50 0 0 20 40 60 80 0 200 150 100 RthJA 50 1 2 3 4 V F - Forward Voltage (V) Figure 4. Forward Current vs. Forward Voltage V Frel - Relative Forward Voltage (V) IF - Forward Current (mA) 250 0 1.2 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 7988 0 20 40 60 80 100 T amb - Ambient Temperature (°C) 94 7990 Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 10 1 1000 I e - Radiant Intensity (mW/sr) I F - Forward Current (A) 10 0 94 7996 Figure 1. Power Dissipation vs. Ambient Temperature I FSM = 2.5 A ( Single Pulse ) tp/T = 0.01 10 0 10 1 10 -1 100 Tamb - Ambient Temperature (°C) 94 7957 10 2 0.05 0.1 0.5 1.0 10 -1 10 -2 94 7989 TSUS5200 10 TSUS 5201 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 Figure 3. Pulse Forward Current vs. Pulse Duration Document Number 81055 Rev. 2.0, 23-Feb-07 TSUS 5202 100 10 0 94 7991 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Figure 6. Radiant Intensity vs. Forward Current www.vishay.com 3 TSUS520. Vishay Semiconductors 0° I e rel - Relative Radiant Intensity Φ - Radiant Power (mW) e 1000 TSUS 5202 100 TSUS5200 10 1 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 7992 0.6 10 4 0.4 0.2 0 0.2 0.4 0.6 94 7995 Figure 7. Radiant Power vs. Forward Current Figure 10. Relative Radiant Intensity vs. Angular Displacement 1.6 I e rel ; Φe rel 1.2 IF = 20 mA 0.8 0.4 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature Φe rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 94 7994 950 1000 λ - Wavelength (nm) Figure 9. Relative Radiant Power vs. Wavelength www.vishay.com 4 Document Number 81055 Rev. 2.0, 23-Feb-07 TSUS520. Vishay Semiconductors Package Dimensions in mm 95 10916 Document Number 81055 Rev. 2.0, 23-Feb-07 www.vishay.com 5 TSUS520. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 81055 Rev. 2.0, 23-Feb-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1