TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted, plastic package. Features • • • • • Package type: leaded Dimensions: T-1¾ (∅ 5 mm) Peak wavelength: λp = 870 nm High reliability High radiant power • • • • • • • High radiant intensity Angle of half intensity: ϕ = ± 38° Low forward voltage Suitable for high pulse current operation High modulation bandwidth Good spectral matching to Si photodetectors Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC 21061 e2 Applications • Infrared video data transmission between camcorder and TV set • Free air data transmission systems with high modulation frequencies or high data transmission Product Summary Component TSFF5510 Symbol Value Unit φe 55 mW Ie 32 mW/sr tr, tf 15 ns ϕ λp ± 38 deg 870 nm Ordering Information Ordering code TSFF5510 Packing Remarks Bulk MOQ: 4000 pcs, 4000 pcs/bulk Note: MOQ: minimum order quantity Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 5 Unit V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM Surge forward current tp = 100 µs IFSM 1 A PV 170 mW Power dissipation Junction temperature Operating temperature range Thermal resistance junction/ambient Document Number 81835 Rev. 1.0, 07-Feb-08 100 °C - 40 to + 85 °C °C Tstg - 40 to + 100 t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm soldered on PCB RthJA 250 K/W Storage temperature range Soldering temperature Tj Tamb For technical support, contact: [email protected] www.vishay.com 1 TSFF5510 Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 250 K/W 100 80 60 40 100 80 RthJA = 250 K/W 60 40 20 20 0 0 0 10 21007 20 30 40 50 60 70 80 90 100 0 21008 Tamb - Ambient Temperature (°C) Figure 1. Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Figure 2. Forward Current Limit vs. Ambient Temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Test condition Symbol Min. Typ. Max. Unit IF = 100 mA, tp = 20 ms VF 1.3 1.45 1.7 V IF = 450 mA, tp = 100 µs VF 1.5 1.75 2.1 IF = 1 A, tp = 100 µs VF 2.1 V IF = 1 mA TKVF - 1.8 mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj 10 110 V µA pF Optical Characteristics Tamb = 25 °C, unless otherwise specified Test condition Symbol Radiant intensity Parameter IF = 100 mA, tp = 20 ms Ie IF = 100 mA, tp = 20 ms φe 44 55 89 Radiant power IF = 450 mA, tp = 100 µs φe 200 247 400 IF = 1 A, tp = 100 µs φe 550 mW IF = 100 mA TKφe - 0.35 %/K ± 38 deg Peak wavelength IF = 100 mA ϕ λp 870 nm Spectral bandwidth IF = 100 mA Δλ 55 nm IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 23 MHz Temperature coefficient of φe Angle of half intensity Temperature coefficient of λp Cut-off frequency www.vishay.com 2 Min. Typ. Max. 32 For technical support, contact: [email protected] Unit mW/sr mW mW Document Number 81835 Rev. 1.0, 07-Feb-08 TSFF5510 Vishay Semiconductors Basic Characteristics Tamb = 25 °C, unless otherwise specified 1000 Tamb < 50° tP/T = 0.01 1000 φe - Radiant Power (mW) IF - Forward Current (mA) 0.02 0.05 0.1 0.2 0.5 100 0.01 100 10 0.1 0.1 1.0 10 21062 tP - Pulse Duration (ms) 16031 1 100 Figure 3. Pulse Forward Current vs. Pulse Duration 100 1000 1.25 Φe, rel - Relative Radiant Power IF - Forward Current (A) 10 IF - Forward Current (mA) Figure 6. Radiant Power vs. Forward Current 10 1 0.1 0.01 IF = 100 mA 1.00 0.75 0.50 0.25 0 0.001 0 0.5 1 1.5 2 2.5 3 3.5 4 VF - Forward Voltage (V) 21009 750 770 790 810 830 850 870 890 910 930 950 970 λ - Wavelength (nm) 21011 Figure 4. Forward Current vs. Forward Voltage Figure 7. Relative Radiant Power vs. Wavelength 1.1 Ie, rel - Relative Radiant Intensity 1000 Ie - Radiant Intensity (mW/sr) tP = 100 µs tP/T = 0.002 1 100 10 1 tP = 100 µs tP/T = 0.002 21010 10 100 1000 IF - Forward Current (mA) Figure 5. Radiant Intensity vs. Forward Current Document Number 81835 Rev. 1.0, 07-Feb-08 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 90 - 70 - 50 - 30 - 10 0 10 0.1 1 1.0 0.9 21012 30 50 70 90 Angle (°) Figure 8. Relative Radiant Intensity vs. Angular Displacement For technical support, contact: [email protected] www.vishay.com 3 TSFF5510 Vishay Semiconductors Package Dimensions in millimeters 20796 www.vishay.com 4 For technical support, contact: [email protected] Document Number 81835 Rev. 1.0, 07-Feb-08 TSFF5510 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81835 Rev. 1.0, 07-Feb-08 For technical support, contact: [email protected] www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1