TSHA550. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. 94 8390 Features • Extra high radiant power • Suitable for high pulse current operation • • • • • • • Standard T-1¾ (∅ 5 mm) package Angle of half intensity ϕ = ± 24 ° Peak wavelength λp = 875 nm High reliability Good spectral matching to Si photodetectors Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Infrared remote control and free air transmission systems with high power and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse Voltage Parameter Test condition VR 5 Unit V Forward current IF 100 mA mA Peak Forward Current tp/T = 0.5, tp = 100 µs IFM 200 Surge Forward Current tp = 100 µs IFSM 2.5 A PV 210 mW Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient Document Number 81020 Rev. 1.3, 07-Apr-04 t ≤ 5 sec, 2 mm from case Tj 100 °C Tamb - 55 to + 100 °C Tstg - 55 to + 100 °C Tsd 260 °C RthJA 350 K/W www.vishay.com 1 TSHA550. VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward Voltage IF = 100 mA, tp = 20 ms Temp. Coefficient of VF IF = 100 mA Symbol Typ. Max VF 1.5 1.8 TKVF - 1.6 Reverse Current VR = 5 V IR Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj Min Unit V mV/K µA 100 20 pF Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Temp. Coefficient of φe Test condition Symbol Min Typ. Max Unit IF = 20 mA TKφe - 0.7 %/K ϕ ± 24 deg Peak Wavelength IF = 100 mA λp 875 nm Spectral Bandwidth IF = 100 mA ∆λ 80 nm Temp. Coefficient of λp IF = 100 mA TKλp 0.2 nm/K Rise Time IF = 100 mA tr 600 ns IF = 1.5 A tr 300 ns IF = 100 mA tf 600 ns IF = 1.5 A tf 300 ns ∅ 2.2 mm Angle of Half Intensity Fall Time Virtual Source Diameter Type Dedicated Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward Voltage Radiant Intensity Test condition IF = 1.5 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 µs Radiant Power www.vishay.com 2 IF = 100 mA, tp = 20 ms Part Symbol Typ. Max Unit TSHA5500 VF Min 3.2 4.9 V TSHA5501 VF 3.2 4.9 V TSHA5502 VF 3.2 4.5 V TSHA5503 VF 3.2 4.5 V TSHA5500 Ie 12 20 60 mW/sr TSHA5501 Ie 16 25 60 mW/sr TSHA5502 Ie 20 30 60 mW/sr TSHA5503 Ie 24 35 60 TSHA5500 Ie 150 240 mW/sr TSHA5501 Ie 200 300 mW/sr TSHA5502 Ie 250 360 mW/sr 300 mW/sr TSHA5503 Ie 420 mW/sr TSHA5500 φe 22 mW TSHA5501 φe 23 mW TSHA5502 φe 24 mW TSHA5503 φe 25 mW Document Number 81020 Rev. 1.3, 07-Apr-04 TSHA550. VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10 4 IF - Forward Current ( mA ) PV - Power Dissipation ( mW ) 250 200 150 R thJA 100 50 0 0 20 40 60 80 10 3 10 2 10 1 100 Tamb - Ambient Temperature ( °C ) 94 7957 V Frel - Relative Forward Voltage IF – Forward Current ( mA) 2 3 4 1.2 100 75 50 25 1.1 I F = 10 mA 1.0 0.9 0.8 0.7 0 0 20 40 60 80 0 100 Tamb – Ambient Temperature ( °C ) 94 8002 e 20 40 60 80 100 T amb - Ambient Temperature ( ° C ) 94 7990 Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 10 1 I e – Radiant Intensity ( mW/sr ) 1000 I FSM = 2.5 A ( Single Pulse ) t p /T= 0.01 0.05 0.1 0.2 TSHA 5503 TSHA 5502 100 TSHA 5501 10 TSHA 5500 0.5 10 -1 10 -2 94 8003 1 V F - Forward Voltage ( V ) Figure 4. Forward Current vs. Forward Voltage 125 IF - Forward Current ( A ) 0 94 8005 Figure 1. Power Dissipation vs. Ambient Temperature 10 0 t p = 100 µs t p /T = 0.001 1 10 -1 10 0 10 1 t p - Pulse Duration ( ms ) 10 2 Figure 3. Pulse Forward Current vs. Pulse Duration Document Number 81020 Rev. 1.3, 07-Apr-04 100 94 8014 e 101 102 103 I F – Forward Current ( mA ) 104 Figure 6. Radiant Intensity vs. Forward Current www.vishay.com 3 TSHA550. VISHAY Vishay Semiconductors 0° I e rel – Relative Radiant Intensity 100 10 1 e – Radiant Power ( mW ) 1000 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 100 101 102 103 I F – Forward Current ( mA ) 94 8015 e 0.6 104 0.4 0.2 0 0.2 0.4 0.6 94 8016 e Figure 7. Radiant Power vs. Forward Current Figure 10. Relative Radiant Intensity vs. Angular Displacement 1.6 I e rel ; Φe rel 1.2 I F = 20 mA 0.8 0.4 0 -10 0 10 50 100 140 Tamb - Ambient Temperature ( °C ) 94 8020 Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature Φ e - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 880 980 λ - Wavelength ( nm ) 94 8000 Figure 9. Relative Radiant Power vs. Wavelength www.vishay.com 4 Document Number 81020 Rev. 1.3, 07-Apr-04 TSHA550. VISHAY Vishay Semiconductors Package Dimensions in mm 14435 Document Number 81020 Rev. 1.3, 07-Apr-04 www.vishay.com 5 TSHA550. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 81020 Rev. 1.3, 07-Apr-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1