Philips Semiconductors Linear Products Product specification Function generator NE/SE566 DESCRIPTION PIN CONFIGURATIONS The NE/SE566 Function Generator is a voltage-controlled oscillator of exceptional linearity with buffered square wave and triangle wave outputs. The frequency of oscillation is determined by an external resistor and capacitor and the voltage applied to the control terminal. The oscillator can be programmed over a ten-to-one frequency range by proper selection of an external resistance and modulated over a ten-to-one range by the control voltage, with exceptional linearity. D, N Packages GROUND 1 8 NC 2 7 C1 SQUARE WAVE OUTPUT 3 6 R1 TRIANGLE WAVE OUTPUT 4 5 MODULATION INPUT V+ TOP VIEW FEATURES • Wide range of operating voltage (up to 24V; single or dual) • High linearity of modulation • Highly stable center frequency (200ppm/°C typical) • Highly linear triangle wave output • Frequency programming by means of a resistor or capacitor, APPLICATIONS • Tone generators • Frequency shift keying • FM modulators • Clock generators • Signal generators • Function generators voltage or current • Frequency adjustable over 10-to-1 range with same capacitor ORDERING INFORMATION TEMPERATURE RANGE ORDER CODE DWG # 8-Pin Plastic Small Outline (SO) Package DESCRIPTION 0 to +70°C NE566D 0174C 14-Pin Ceramic Dual In-Line Package (CERDIP) 0 to +70°C NE566F 0581B 8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE566N 0404B 8-Pin Plastic Dual In-Line Package (DIP) -55°C to +125°C SE566N 0404B BLOCK DIAGRAM V+ R1 6 VC MODULATION 5 INPUT 8 SCHMITT TRIGGER CURRENT SOURCES BUFFER AMPLIFIER 3 4 BUFFER AMPLIFIER 7 C1 April 15, 1992 398 853-0910 06454 Philips Semiconductors Linear Products Product specification Function generator NE/SE566 EQUIVALENT SCHEMATIC 6 R1 (EXTERNAL) 8 V+ 5 VC 7 C1 (EXTER– NAL) 3 4 5kΩ 1 GROUND ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT V+ Maximum operating voltage 26 V VIN, VC Input voltage 3 VP-P TSTG Storage temperature range -65 to +150 °C TA Operating ambient temperature range NE566 0 to +70 °C SE566 -55 to +125 °C 300 mW PD April 15, 1992 Power dissipation 399 Philips Semiconductors Linear Products Product specification Function generator NE/SE566 DC ELECTRICAL CHARACTERISTICS TA=25°C, VCC=±6V, unless otherwise specified. SYMBOL PARAMETER SE566 Min Typ NE566 Max Min Typ Max UNIT General °C TA Operating ambient temperature range -55 125 0 70 VCC Operating supply voltage ±6 ±12 ±6 ±12 V ICC Operating supply current 7 12.5 mA Maximum operating frequency 1 12.5 7 VCO1 fMAX Frequency drift with temperature 500 Frequency drift with supply voltage 0.1 Control terminal input impedance2 1 FM distortion (±10% deviation) 0.2 Maximum sweep rate Sweep range 1 MHz 600 1 0.2 ppm/°C 2 1 0.75 0.4 1 1 10:1 10:1 %/V MΩ 1.5 % MHz Output Triangle wave output impedance voltage 50 1.9 linearity 2.4 1.9 0.2 50 Ω 2.4 VP-P 0.5 % Square wave input impedance 50 Ω 5 5.4 VP-P 40 50 50 voltage 5 5.4 duty Cycle 45 50 55 60 % tR Rise time 20 20 ns tF Fall Time 50 50 ns NOTES: 1. The external resistance for frequency adjustment (R1) must have a value between 2kΩ and 20kΩ. 2. The bias voltage (VC) applied to the control terminal (Pin 5) should be in the range V+≤VC≤V+. April 15, 1992 400 Philips Semiconductors Linear Products Product specification Function generator NE/SE566 TYPICAL PERFORMANCE CHARACTERISTICS Normalized Frequency as a Function of Control Voltage Normalized Frequency as a Function of Resistance (R1) 2.5 RESISTANCE (R1 ) — (KΩ ) 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 V+ = 12 VOLTS VC = 10 VOLTS 50 20 10 5 2 1 0.1 3.0 CONTROL VOLTAGE (BETWEEN PIN 8 AND PIN 5) — VOLTS 2 5 10 Rt = 4kΩ MAXIMUM TYPICAL 15.0 12.5 10.0 V+ = 12 VOLTS VC = 10 VOLTS R1 = 4k 1.0 0.1 0.01 0.001 7.5 5 +0.5 TYPICAL 0 –0.5 –1.0 –1.5 –2.0 –2.5 –75 –50 –25 0 +25 +50 +75 +100 +125 TEMPERATURE — (oC) 10 CAPACITANCE 1 (Cµ ) — SUPPLY CURRENT — mA 1 +1.0 Frequency as a Function of Capacitance (C1) 20.0 17.5 0.5 +1.5 NORMALIZED FREQUENCY F Power Supply Current as a Function of Supply Voltage 0.2 V+ = 12 VOLTS VC = 10 VOLTS +2.0 VCO Output Waveforms OUTPUT 3 — V OUTPUT PIN 4 — V NORMALIZED FREQUENCY V+ = 12 VOLTS +2.5 CHANGE IN FREQUENCY — (%) 100 2.0 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇ Change in Frequency as a Function of Temperature 6 V+ = 12 VOLTS 5 4 12 10 8 6 4 0.0001 10 13 16 19 22 25 1 10 SUPPLY VOLTAGE — V 102 OPERATING INSTRUCTIONS 104 105 fO The NE/SE566 Function Generator is a general purpose voltage-controlled oscillator designed for highly linear frequency modulation. The circuit provides simultaneous square wave and triangle wave outputs at frequencies up to 1MHz. A typical connection diagram is shown in Figure 1. The control terminal (Pin 5) must be biased externally with a voltage (VC) in the range 106 2 [(V ) (V C)] R1 C1 V and R1 should be in the range 2kΩ< R1<20kΩ. A small capacitor (typically 0.001µF) should be connected between Pins 5 and 6 to eliminate possible oscillation in the control current source. V+≤VC≤V+ If the VCO is to be used to drive standard logic circuitry, it may be desirable to use a dual supply as shown in Figure 2. In this case the square wave output has the proper DC levels for logic circuitry. RTL can be driven directly from Pin 3. For DTL or TTL gates, which require a current sink of more than 1mA, it is usually necessary to connect a 5kΩ resistor between Pin 3 and negative supply. This increases the current sinking capability to 2mA. The third type of where VCC is the total supply voltage. In Figure 1, the control voltage is set by the voltage divider formed with R2 and R3. The modulating signal is then AC coupled with the capacitor C2. The modulating signal can be direct coupled as well, if the appropriate DC bias voltage is applied to the control terminal. The frequency is given approximately by April 15, 1992 103 FREQUENCY — Hz 401 Philips Semiconductors Linear Products Product specification Function generator NE/SE566 interface shown uses a saturated transistor between the 566 and the logic circuitry. This scheme is used primarily for TTL circuitry which requires a fast fall time (<50ns) and a large current sinking capability. 1.5K V+ R2 1.5K C2 R3 10K .001µF 5K R1 RTL 10K .001µF 6 R1 10K 84 5 6 VC SE/NE 566 7 1 3 8 3 VC 5 SE/NE 566 4 7 1 5K C1 –6 VOLTS C1 Figure 2. Figure 1. April 15, 1992 402 DTL & T 2L DTL OR T2L WITH FAST FALL TIME