PHILIPS BAV100

DISCRETE SEMICONDUCTORS
DATA SHEET
1/3 page (Datasheet)
M3D054
BAV100 to BAV103
General purpose diodes
Product specification
Supersedes data of April 1996
1996 Sep 17
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
FEATURES
DESCRIPTION
• Small hermetically sealed glass
SMD package
The BAV100 to BAV103 are switching diodes fabricated in planar technology,
and encapsulated in small hermetically sealed glass SOD80C SMD packages.
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 50 V, 100 V, 150 V and 200 V
respectively
• Repetitive peak reverse voltage:
max. 60 V, 120 V, 200 V and 250 V
respectively
k
handbook, 4 columns
a
MAM061
• Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
• Switching in industrial equipment
e.g. oscilloscopes, digital
voltmeters and video output stages
in colour television.
1996 Sep 17
Cathode indicated by green band.
Fig.1 Simplified outline (SOD80C) and symbol.
2
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
repetitive peak reverse voltage
BAV100
−
60
V
BAV101
−
120
V
BAV102
−
200
V
BAV103
−
250
V
continuous reverse voltage
BAV100
−
50
V
BAV101
−
100
V
BAV102
−
150
V
BAV103
−
200
V
−
250
mA
−
625
mA
t = 1 µs
−
9
A
t = 100 µs
−
3
A
t=1s
−
1
A
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
Ptot
total power dissipation
−
400
Tstg
storage temperature
Tamb = 25 °C; note 1
−65
+175
°C
Tj
junction temperature
−
175
°C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 17
3
mW
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
CONDITIONS
MIN.
MAX.
UNIT
see Fig.3
IF = 100 mA
−
1.0
V
IF = 200 mA
−
1.25
V
see Fig.5
VR = 50 V
−
100
nA
VR = 50 V; Tj = 150 °C
−
100
µA
BAV101
VR = 100 V
−
100
nA
VR = 100 V; Tj = 150 °C
−
100
µA
BAV102
VR = 150 V
−
100
nA
VR = 150 V; Tj = 150 °C
−
100
µA
BAV100
BAV103
VR = 200 V
−
100
nA
VR = 200 V; Tj = 150 °C
−
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
5
pF
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω;
measured at IR = 3 mA; see Fig.8
−
50
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 17
4
VALUE
UNIT
300
K/W
375
K/W
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
GRAPHICAL DATA
MBH278
300
MBG459
600
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
400
200
(1)
(3)
200
100
0
0
0
100
Tamb (oC)
0
200
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
(2)
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG703
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 17
5
104
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
MGD009
103
handbook, halfpage
MGD005
1.6
handbook, halfpage
IR
(µA)
Cd
(pF)
102
1.4
10
1.2
1
1.0
10−1
10−2
0
100
Tj (oC)
0.8
200
0
VR = VRmax.
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
MBG700
300
handbook, halfpage
VR
(V)
(1)
200
(2)
(3)
100
(4)
0
0
100
Tamb (oC)
200
(1) BAV103.
(2) BAV102.
(3) BAV101.
(4) BAV100.
Fig.7
Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
1996 Sep 17
6
10
VR (V)
20
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
handbook, full pagewidth
tr
tp
t
D.U.T.
RS = 50 Ω
V = VR I F x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R i = 50 Ω
MGA881
(1)
90%
VR
input signal
(1) IR = 1 mA.
Fig.8 Reverse recovery voltage test circuit and waveforms.
1996 Sep 17
t rr
7
output signal
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
PACKAGE OUTLINE
handbook, full pagewidth
1.60
O 1.45
0.3
0.3
3.7
3.3
MBA390 - 2
Dimensions in mm.
Fig.9 SOD80C.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 17
8