DG308B/309B Vishay Siliconix Improved Quad CMOS Analog Switches 22-V Supply Voltage Rating CMOS Compatible Logic Low On-Resistance—rDS(on): 45 Low Leakage—ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching—tON: < 200 ns Low Glitching—Q: 1 pC Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG308A/309 Space Savings (TSSOP) Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits The DG308B/309B analog switches are highly improved versions of the industry-standard DG308A/309. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. switching transients. The DG308B and DG309B can handle up to 22-V input signals. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes The DG308B is a normally open switch and the DG309B is a normally closed switch. (See Truth Table.) DG308B Dual-In-Line, SOIC and TSSOP IN1 D1 S1 V– GND S4 D4 IN4 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Logic DG308B 0 OFF ON 1 ON OFF IN2 D2 Logic “0” 3.5V Logic “1” 11 V S2 V+ NC Temp Range S3 D3 DG309B Package 16-Pin Plastic DIP 40 to 85C –40 16-Pin Narrow SOIC IN3 16-Pin TSSOP Part Number DG308BDJ DG309BDJ DG308BDY DG309BDY DG308BDQ DG309BDQ DG308BAK Top View –55 55 to 125C 16 Pi CerDIP 16-Pin C DIP DG308BAK/883 DG309BAK DG309BAK/883 Document Number: 70047 S-52896—Rev. E, 14-Jul-97 www.vishay.com FaxBack 408-970-5600 4-1 DG308B/309B Vishay Siliconix Voltages Referenced to V– V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AK, Suffix) . . . . . . . . . . . . . . . . . –65 to 150C (DJ, DY, DQ Suffix) . . . . . . . . . . –65 to 125C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/C above 75C d. Derate 7.6 mW/C above 75C e. Derate 12 mW/C above 75C Test Conditions Unless Specified Parameter Symbol V+ = 15 V, V– = –15 V VIN = 11 V, 3.5 Vf Tempb Typc A Suffix D Suffix –55 to 125C –40 to 85C Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance rDS(on) Match VANALOG rDS(on) Full VD = 10 V, IS = 1 mA DrDS(on) Room Full 45 Room 2 Source Off Leakage Current IS(off) VS = 14 V, VD = 14 V Room Full 0.01 Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room Full 0.01 Drain On Leakage Current ID(on) VS = VD = 14 V Room Full 0.02 V W % –5 0.5 5 –0.5 –10 0.5 10 –5 0.5 5 nA A Digital Control Input Voltage High VINH Full Input Voltage Low VINL Full Input Current Input Capacitance IINH or IINL VINH or VINL CIN – Full Room – 5 V mA pF Dynamic Characteristics Turn-On Time Turn-Off Time tON tOFF Charge Injection Source-Off Capacitance Q CS(off) Drain-Off Capacitance CD(off) Channel On Capacitance CD(on) Off Isolation OIRR Channel-to-Channel Crosstalk XTALK www.vishay.com FaxBack 408-970-5600 4-2 VS = 3 V, See Figure 2 CL = 1000 pF, Vg= 0 V, Rg = 0 W VS = 0 V, f = 1 MHz VD = VS = 0 V, f = 1 MHz CL = 15 pF, RL = 50 W VS = 1 VRMS, f = 100 kHz Room Room Room 1 Room 5 Room 5 Room 16 Room 90 Room 95 ns pC pF F dB Document Number: 70047 S-52896—Rev. E, 14-Jul-97 DG308B/309B Vishay Siliconix Test Conditions Unless Specified Parameter Symbol V+ = 15 V, V– = –15 V VIN = 11 V, 3.5 Vf Tempb Typc A Suffix D Suffix –55 to 125C –40 to 85C Mind Maxd Mind Maxd Unit Power Supply 1 Room Full Positive Supply Current I+ Negative Supply Current I– Room Full Power Supply Range for Continuous Operation VOP Full VIN = 0 or 15 V 1 mA V Test Conditions Unless Specified Parameter V+ = 12 V, V– = 0 V VIN = 11 V, 3.5 Vf Tempb VANALOG Full rDS(on) VD = 3 V, 8 V, IS = 1 mA Room Full Symbol Typc A Suffix D Suffix –55 to 125C –40 to 85C Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance V W Room Room 90 Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection tON tOFF Q VS = 8 V, See Figure 2 CL = 1 nF, Vgen= 6 V, Rgen = 0 W Room 4 ns pC Power Supply 1 Room Full Positive Supply Current I+ Negative Supply Current I– Room Full Power Supply Range for Continuous Operation VOP Full VIN = 0 or 12 V 1 mA V Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Document Number: 70047 S-52896—Rev. E, 14-Jul-97 www.vishay.com FaxBack 408-970-5600 4-3 DG308B/309B Vishay Siliconix rDS(on) vs. VD and Power Supply Voltages rDS(on) vs. VD and Temperature 100 r DS(on)– Drain-Source On-Resistance ( ) r DS(on)– Drain-Source On-Resistance ( ) 110 100 90 5 V 80 70 10 V 60 15 V 50 40 20 V 30 20 –8 –4 0 4 8 12 16 80 70 60 125C 50 85C 40 25C 30 –55C 20 10 0 –15 10 –20 –16 –12 V+ = 15 V V– = –15 V 90 20 –10 –5 VD – Drain Voltage (V) rDS(on) vs. VD and Single Power Supply Voltages I S,I D – Current (pA) r DS(on)– Drain-Source On-Resistance ( ) 20 175 7V 125 10 V 12 V 15 V 75 ID(on) 10 IS(off), ID(off) 0 –10 –20 50 –30 25 –40 –20 0 0 2 4 6 8 10 12 14 16 –15 –10 VD – Drain Voltage (V) –5 0 5 10 15 20 Analog Voltage Leakage Currents vs. Temperature QS, QD – Charge Injection vs. Analog Voltage 1 nA 30 V+ = 15 V V– = –15 V VS, VD = 14 V 20 100 pA Q – Charge (pC) I S,I D – Current 15 V+ = 22 V V– = –22 V TA = 25C 30 200 100 10 Leakage Currents vs. Analog Voltage V+ = 5 V 150 5 40 250 225 0 VD – Drain Voltage (V) IS(off), ID(off) 10 pA 10 0 V+ = 15 V V– = –15 V V+ = 12 V V– = 0 V –10 –20 1 pA –55 –35 –15 5 25 45 65 Temperature (C) www.vishay.com FaxBack 408-970-5600 4-4 85 105 125 –30 –15 –10 –5 0 5 10 15 Analog Voltage (V) Document Number: 70047 S-52896—Rev. E, 14-Jul-97 DG308B/309B Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Off Isolation vs. Frequency 120 V+ = 15 V V– = –15 V 110 100 OIRR (dB) 90 RL = 50 80 70 60 50 40 10 k 100 k 1M 10 M f – Frequency (Hz) SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ SX V– Level Shift/ Drive V+ INX DX GND V– FIGURE 1. TEST CIRCUITS +15 V V+ VS = +3 V D S VO Logic Input tr <20 ns tf <20 ns 12 V 50% 0V tOFF IN 12 V GND V– CL 35 pF RL 1 k 90% Switch Output –15 V VO = VS VO tON RL RL + rDS(on) FIGURE 2. Switching Time Document Number: 70047 S-52896—Rev. E, 14-Jul-97 www.vishay.com FaxBack 408-970-5600 4-5 DG308B/309B Vishay Siliconix C +15 V +15 V C V+ S1 VS V+ S VS VO D D1 Rg = 50 W 50 W IN1 Rg = 50 W 0V, 15 V 50 W IN 0V, 15 V S2 NC GND V– C 50 W IN2 0V, 15 V GND –15 V C = RF bypass XTALK Isolation = 20 log VS Off Isolation = 20 log VO FIGURE 3. Off Isolation C –15 V FIGURE 4. Channel-to-Channel Crosstalk DVO VO V+ S D VO IN Vg V– VS VO +15 V Rg VO D2 CL 1000 pF 12 V INX ON OFF ON V– GND DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO –15 V FIGURE 5. Charge Injection 30 pF +5 V VIN1 VL +15 V +15 V V+ + LM101A VIN2 +15 V – DG419 –15 V RF1 18 kW RF1 9.9 kW RF1 100 kW RG1 2 kW RG2 100 W RG3 100 W DG308B CH V– GND –15 V Gain = Gain 1 (x1) RF + RG Gain 2 (x10) RG Gain 3 (x100) Gain 4 (x1000) V– GND Logic High = Switch On –15 V FIGURE 6. A Precision Amplifier with Digitally Programmable Inputs and Gains www.vishay.com FaxBack 408-970-5600 4-6 Document Number: 70047 S-52896—Rev. E, 14-Jul-97 DG308B/309B Vishay Siliconix 15 V V+ Logic Input Low = Sample High = Hold 1 kW +15 V +15 V –15 V – J202 LM101A VIN + 5 MW 200 W 50 pF 5.1 MW 30 pF VOUT 1000 pF DG309B V– 2N4400 J500 –15 V J507 –15 V = 25 ms = 1 ms = 5 mV = 5 mV/s Aquisition Time Aperature Time Sample to Hold Offset Droop Rate FIGURE 7. Sample-and-Hold +15 V 160 V1 C4 fC3 Select TTL Control fC2 Select fC1 Select 150 pF 120 C3 1500 pF Voltage Gain – dB fC4 Select C2 0.015 mF C1 0.15 mF 80 fC1 fC2 fC3 fL1 0 V– DG309B fC4 40 fL2 fL3 fL4 GND –40 1 –15 V 10 100 1k R3 = 1 MW +15 V –15 V – R1 = 10 kW LM101A + R2 = 10 kW VOUT AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2pR3CX fL (Unity Gain Frequency) = 30 pF 10 k 100 k 1M Frequency – Hz Max Attenuation = rDS(on) 10 kW R3 R1 = 100 (40 dB) 1 2pR1CX –40 dB FIGURE 8. Active Low Pass Filter with Digitally Selected Break Frequency Document Number: 70047 S-52896—Rev. E, 14-Jul-97 www.vishay.com FaxBack 408-970-5600 4-7