PHILIPS BLT70

DISCRETE SEMICONDUCTORS
DATA SHEET
BLT70
UHF power transistor
Product specification
1996 Feb 06
Philips Semiconductors
Product specification
UHF power transistor
BLT70
FEATURES
• Very high efficiency
• Low supply voltage.
4
handbook, halfpage
APPLICATIONS
• Hand-held radio equipment in common emitter class-AB
operation in the 900 MHz communication band.
c
b
DESCRIPTION
e
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223H SMD package.
1
PINNING - SOT223H
2
3
MAM043 - 1
Top view
PIN
SYMBOL
DESCRIPTION
1
e
emitter
2
b
base
3
e
emitter
4
c
collector
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7).
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(mW)
Gp
(dB)
ηC
(%)
CW, class-AB
900
4.8
600
≥6
≥60
1996 Feb 06
2
Philips Semiconductors
Product specification
UHF power transistor
BLT70
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
16
V
VCEO
collector-emitter voltage
open base
−
8
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
250
mA
Ptot
total power dissipation
Ts = 60 °C; note 1
−
2.1
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
175
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
Rth j-s
Ptot = 2.1 W; Ts = 60 °C; note 1
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
MGD197
3
handbook, halfpage
Ptot
(W)
2
1
0
0
100
Ts (oC)
200
Fig.2 DC SOAR.
1996 Feb 06
3
VALUE
UNIT
55
K/W
Philips Semiconductors
Product specification
UHF power transistor
BLT70
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
−
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.5 mA
16
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 5 mA
8
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.2 mA
2.5
−
V
ICES
collector leakage current
VCE = 7 V; VBE = 0
−
0.1
mA
hFE
DC current gain
VCE = 4.8 V; IC = 100 mA
25
−
Cc
collector capacitance
VCB = 4.8 V; IE = ie = 0; f = 1 MHz
−
3.5
pF
Cre
feedback capacitance
VCE = 4.8 V; IC = 0; f = 1 MHz
−
2.5
pF
MGD198
V
MGD199
100
4
handbook, halfpage
handbook, halfpage
Cc
(pF)
hFE
80
3
60
2
40
1
20
0
0
0
100
200
IC (mA)
300
0
1996 Feb 06
8
12
16
VCB (V)
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
VCE = 4.8 V; Tj = 25 °C.
Fig.3
4
DC current gain as a function of collector
current; typical values.
Fig.4
4
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT70
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7).
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
CW, class-AB
900
4.8
0.01
0.6
Gp
(dB)
ηC
(%)
≥6
≥60
typ. 8.1
typ. 73
Note
1. Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT70 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 6.5 V; PL = 0.5 W; Ts ≤ 60 °C.
MGD201
MGD200
100
ηC
(%)
10
handbook, halfpage
Gp
(dB)
Gp
1.0
handbook, halfpage
PL
(W)
80
0.8
6
60
0.6
4
40
0.4
2
20
0.2
8
ηC
0
0.2
0
0.4
0.6
0.8
0
1.0
PL (W)
0
0
f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts ≤ 60 °C.
Fig.5
PIN (mW)
200
f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts ≤ 60 °C.
Power gain and collector efficiency as
functions of load power; typical values.
1996 Feb 06
100
Fig.6
5
Load power as a function of input
power; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT70
Test circuit information
+Vbias
+VS
handbook, full pagewidth
C11
R2
L8
R1
T1
C6
R3
C8
C9
L3
input
50 Ω
C1
C2
C3
L1
C4
C5
L2
L7
DUT
L4
L5
L6
C7
L9
C10
L10
C12
C14
output
50 Ω
C13
MGD205
VS = Vbias = typ. 4.8 V.
Fig.7 Common emitter test circuit for class-AB operation at 900 MHz.
1996 Feb 06
6
Philips Semiconductors
Product specification
UHF power transistor
BLT70
List of components used in test circuit (see Figs 7 and 8)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C6, C9, C14
multilayer ceramic chip capacitor;
note 1
100 pF
C2
multilayer ceramic chip capacitor;
note 1
1 pF
C4
multilayer ceramic chip capacitor;
note 1
2.4 pF
C3, C5, C12, C13
film dielectric trimmer
1.4 to 5.5 pF
C7
multilayer ceramic chip capacitor;
note 1
5.1 pF
C8
tantalum capacitor
1 µF, 35 V
C10
multilayer ceramic chip capacitor;
note 1
2.7 pF
C11
tantalum capacitor
100 µF, 20 V
L1
stripline; note 2
50 Ω
length 29.1 mm
width 5 mm
L2
stripline; note 2
50 Ω
length 21 mm
width 5 mm
L3
8 turns enamelled 0.8 mm copper
wire
216 nH
length 7 mm
internal dia. 4.5 mm
L4
stripline; note 2
50 Ω
length 1 mm
width 5 mm
L5
stripline; note 2
50 Ω
length 3 mm
width 2.5 mm
L6
stripline; note 2
50 Ω
length 12 mm
width 5 mm
L7
8 turns enamelled 0.8 mm copper
wire
105 nH
length 7 mm
internal dia. 3.4 mm
L8
grade 3B Ferroxcube wideband
HF choke
L9
stripline; note 2
50 Ω
length 12 mm
width 5 mm
L10
stripline; note 2
50 Ω
length 28 mm
width 5 mm
R1
metal film resistor
0.1 W, 15 Ω
R2
metal film resistor
0.1 W, 390 Ω
R3
metal film resistor
0.6 W, 10 Ω
T1
NPN transistor
BD139
CATALOGUE No.
2222 809 09004
4132 020 36640
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr = 2.2); thickness 1⁄16";
thickness of the copper sheet 2 × 35 µm.
1996 Feb 06
7
Philips Semiconductors
Product specification
UHF power transistor
BLT70
139
handbook, full pagewidth
79
+VS
+Vbias
Copper foil
C4
C2
C3
C8
C11
T1
R1
C1
L8
R2
L3
C9
C6
L1
L7
L2
C5
R3
L4
L5
L6
L9
C10
C7
C14
L10
C12
C13
Plated through holes
BLT70
MGD206
Dimensions in mm.
The components are situated on one side of the copper-clad PCB, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-AB test circuit in Fig.7.
1996 Feb 06
8
Philips Semiconductors
Product specification
UHF power transistor
BLT70
MGD203
MGD202
40
L
(Ω)
30
20
handbook,
Z halfpage
handbook, halfpage
Zi
(Ω)
16
RL
ri
20
12
10
8
xi
0
XL
4
−10
0
800
850
900
950
−20
800
1000
f (MHz)
850
900
950
1000
f (MHz)
VCE = 4.8 V; ICQ = 0.01 mA; PL = 0.6 W; Ts ≤ 60 °C.
VCE = 4.8 V; ICQ = 0.01 mA; PL = 0.6 W; Ts ≤ 60 °C.
Fig.9
Fig.10 Load impedance as a function of frequency
(series components); typical values.
Input impedance as a function of frequency
(series components); typical values.
MGD204
12
handbook, halfpage
Gp
(dB)
8
handbook, halfpage
Zi
4
ZL
0
800
850
900
950
f (MHz)
MBA451
1000
VCE = 4.8 V; ICQ = 0.01 mA; PL = 0.6 W; Ts ≤ 60 °C.
Fig.11 Power gain as a function of
frequency; typical values.
1996 Feb 06
Fig.12 Definition of transistor impedance.
9
Philips Semiconductors
Product specification
UHF power transistor
BLT70
PACKAGE OUTLINE
0.95
0.85
handbook, full pagewidth
S
0.1 S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
4
A
0.10
0.01
16 o
max
16
3.7
3.3
10 o
max
2
0.80
0.60
2.3
4.6
Dimensions in mm.
Fig.13 SOT223H.
1996 Feb 06
7.3
6.7
o
1
1.80
max
0.2 M A
10
3
0.1 M B
(4x)
MSA035 - 1
Philips Semiconductors
Product specification
UHF power transistor
BLT70
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Feb 06
11