DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability. BLV103 QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. f (MHz) MODE OF OPERATION c.w. class-AB 960 VCE (V) 24 PL (W) 4 ηC (%) Gp (dB) > 11.5 > 45 WARNING Product and environmental safety - toxic materials DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. It is intended for common emitter, class-AB operation in cellular radio base stations in the 960 MHz frequency band. All leads are isolated from the mounting base. This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PIN CONFIGURATION PINNING - SOT171 k, halfpage PIN DESCRIPTION 1 emitter 2 emitter 1 c 2 handbook, halfpage 3 base 3 4 4 collector 5 6 5 emitter 6 emitter b MBB012 Top view MBA931 - 1 Fig.1 Simplified outline and symbol. March 1993 2 e Philips Semiconductors Product specification UHF power transistor BLV103 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 4 V IC collector current DC or average value − 1.25 A Ptot total power dissipation Tmb = 25 °C − 17 W Tstg storage temperature range −65 150 °C Tj junction operating temperature − 200 °C MRA365 MRA366 5 handbook, halfpage handbook, 25 halfpage Ptot (W) IC (A) (3) 20 (1) Tmb = 25 oC 1 (2) 15 Th = 70 oC (1) 10 5 0.1 1 10 VCE (V) 0 102 0 20 40 60 80 100 120 Th (oC) (1) Continuous DC operation. (2) Continuous RF operation. (1) Second breakdown limit (independent of temperature). (3) Short time operation during mismatch. Fig.2 DC SOAR. Fig.3 Power/temperature derating. THERMAL RESISTANCE SYMBOL PARAMETER Rth j-mb from junction to mounting base Rth mb-h from mounting base to heatsink March 1993 CONDITIONS Tmb = 25 °C; Pdis = 17 W 3 MAX. UNIT 10.3 K/W 0.4 K/W Philips Semiconductors Product specification UHF power transistor BLV103 CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 4 mA 50 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 30 mA 30 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 2 mA 4 − − V ICES collector-emitter leakage current VBE = 0; VCE = 30 V − − 1 mA hFE DC current gain VCE = 25 V; IC = 300 mA 20 40 − Cc collector capacitance VCB = 25 V; IE = Ie = 0; f = 1 MHz − 6.6 8 pF Cre feedback capacitance VCE = 25 V; IC = 20 mA; f = 1 MHz − 3.5 4.5 pF MRA361 handbook, 50 halfpage hFE MRA358 20 handbook, halfpage VCE = 25 V Cc (pF) 40 5V 30 10 20 10 0 0 0.2 0.4 0.6 0.8 IC (A) 0 1 0 10 20 VCB (V) 30 IE = ie = 0; f = 1 MHz. Fig.4 DC current gain as a function of collector current, typical values. March 1993 Fig.5 4 Collector capacitance as a function of collector-base voltage, typical values. Philips Semiconductors Product specification UHF power transistor BLV103 APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter test circuit, Rth mb-h = 0.4 K/W. f (MHz) MODE OF OPERATION c.w. class-AB VCE (V) ICQ (mA) ηc (%) GP (dB) 960 24 5 4 > 11.5 typ. 13 > 45 typ. 48 960 26 5 4 typ. 14 typ. 50 MRA359 16 handbook, halfpage MRA364 80 8 handbook, halfpage η GP (dB) PL (W) PL (W) (%) GP 12 60 VCE = 26 V 6 24 V 8 40 η 4 20 4 2 0 0 0 2 4 6 PL (W) 0 8 0 200 400 600 800 PIN (mW) Class-AB operation; ICQ = 5 mA; f = 960 MHz; VCE = 24 V. Class-AB operation; ICQ = 5 mA; f = 960 MHz. Fig.6 Fig.7 Gain and efficiency as functions of load power, typical values. Load power as a function of drive power, typical values. Ruggedness in class-AB operation The BLV103 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power under the following conditions: VCE = 24 V; f = 960 MHz; Th = 25 °C; Rth mb-h = 0.4 K/W. March 1993 5 Philips Semiconductors Product specification UHF power transistor BLV103 handbook, full pagewidth R1 VB C6 R2 C8 VCC L8 L6 C7 C9 L5 50 Ω input C1 ,,,,,, ,,,,,, ,,,,,, ,,,,,, L1 L2 C2 C10 L7 L3 C5 L4 C3 C4 D.U.T. C12 L9 C11 L10 L11 C13 L12 C15 50 Ω output C14 MDA537 Fig.8 Class-AB test circuit at f = 960 MHz. List of components (see test circuit) COMPONENT DESCRIPTION VALUE C1, C6, C7, C8, C15 multilayer ceramic chip capacitor 330 pF C2, C3, C13, C14 film dielectric trimmer 1.4 to 5.5 pF C4, C5 multilayer ceramic chip capacitor (note 1) 5.1 pF C9 35 V solid aluminum capacitor 2.2 µF C10 multilayer ceramic chip capacitor 3 × 100 nF in parallel C11, C12 multiplayer ceramic chip capacitor (note 2) 6.2 pF L1, L12 stripline (note 3) 50 Ω DIMENSIONS 2222 809 09001 2222 128 50228 9 mm × 2.4 mm L2, L11 stripline (note 3) 50 Ω 23 mm × 2.4 mm L3 stripline (note 3) 50 Ω 16 mm × 2.4 mm L4 stripline (note 3) 43 Ω 3 mm × 3 mm L5 3 turns enamelled 0.8 mm copper wire L6, L8 grade 3B Ferroxcube wideband HF choke L7 4 turns enamelled 0.8 mm copper wire L9 stripline (note 3) 43 Ω 14.5 mm × 3 mm L10 stripline (note 3) 50 Ω 4.5 mm × 2.4 mm R1, R2 0.4 W metal film resistor 10 Ω March 1993 CATALOGUE NO. int. dia. 3 mm; length 5 mm; leads 2 mm × 5 mm 4312 020 36642 int. dia. 4 mm; length 5 mm; leads 2 mm × 5 mm 6 2322 151 71009 Philips Semiconductors Product specification UHF power transistor BLV103 Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄32 inch. 122 mm handbook, full pagewidth copper straps copper straps rivets rivets 70 mm rivets rivets M2 copper straps copper straps M3 C7 L6 L8 C6 R1 C10 C8 C9 R2 L7 C12 L5 C5 C1 L1 L2 L3 L4 L12 L11 C15 C11 C4 C3 L10 L9 C3 C13 C14 MDA536 The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is fully metallized and serves as a ground plane. Connections are made by means of fixing screws, hollow rivets and copper straps around the board and under the emitters, to provide a direct contact between the components side and the ground plane. Fig.9 Component layout for 960 MHz class-AB test circuit. March 1993 7 Philips Semiconductors Product specification UHF power transistor BLV103 MRA362 MRA363 16 handbook, 10 halfpage handbook, halfpage Zi (Ω) ZL (Ω) XL 8 12 ri 6 8 xi 4 RL 4 2 0 840 880 920 960 0 840 1000 880 920 f (MHz) 960 1000 f (MHz) Class-AB operation; VCE = 24 V; ICQ = 5 mA; PL = 4 W; Th = 25 °C. Class-AB operation; VCE = 24 V; ICQ = 5 mA; PL = 4 W; Th = 25 °C. Fig.10 Input impedance (series components) as a function of frequency, typical values. Fig.11 Load impedance (series components) as a function of frequency, typical values. MRA360 16 handbook, halfpage GP (dB) 12 8 handbook, halfpage 4 Zi ZL MBA451 0 840 880 920 960 f (MHz) 1000 Class-AB operation; VCE = 24 V; ICQ = 5 mA; PL = 4 W; Th = 25 °C. Fig.12 Definition of transistor impedance. March 1993 Fig.13 Power gain as a function of frequency, typical values. 8 Philips Semiconductors Product specification UHF power transistor BLV103 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C H1 c b1 2 H 4 6 E1 U2 1 A 3 5 E w1 M A B p Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 E E1 e mm 6.81 6.07 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 9.30 8.99 5.95 5.74 6.00 5.70 3.58 inches w1 w2 w3 0.51 1.02 0.26 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 0.04 0.01 OUTLINE VERSION F JEDEC EIAJ SOT171A March 1993 H1 3.05 11.31 9.27 2.54 10.54 9.01 REFERENCES IEC H p 3.43 3.17 Q q U1 U2 4.32 24.90 6.00 18.42 4.11 24.63 5.70 EUROPEAN PROJECTION ISSUE DATE 97-06-28 9 Philips Semiconductors Product specification UHF power transistor BLV103 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 10