DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES BLV99/SL PIN CONFIGURATION • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. halfpage 1 c DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. handbook, halfpage 3 2 b 4 Top view MSB007 PINNING - SOT172D PIN e MBB012 Fig.1 Simplified outline and symbol. DESCRIPTION 1 emitter 2 base 3 collector 4 emitter WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter class-B test circuit. MODE OF OPERATION c.w. narrow band September 1991 f (MHz) 900 2 PL (W) VCE (V) 24 2 Gp (dB) >8 ηc (%) > 55 Philips Semiconductors Product specification UHF power transistor BLV99/SL LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 27 V VEBO emitter-base voltage open collector − 3.5 V IC collector current DC value − 200 mA ICM collector current peak value f > 1 MHz − 600 mA Ptot total power dissipation f > 1 MHz; Tmb = 50 °C − 6 W Tstg storage temperature range −65 150 °C Tj junction operating temperature − 200 °C MBK466 12 handbook, halfpage Ptot (W) 8 ΙΙ 4 Ι 0 0 40 80 120 Th (°C) 160 (I) Continuous RF operation. (II) Short time operation during mismatch. Fig.2 Power/temperature derating curves. THERMAL RESISTANCE SYMBOL Rth j-mb(RF) September 1991 PARAMETER from junction to mounting base 3 CONDITIONS MAX. PL = 4.5 W; Tmb = 25 °C 20 UNIT K/W Philips Semiconductors Product specification UHF power transistor BLV99/SL CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 5 mA 50 − − V V(BR)CEO collector-emitter breakdown voltage VBE = 0; IC = 10 mA 27 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.5 mA 3.5 − − V ICES collector-emitter leakage current VBE = 0; VCE = 27 V − − 2 mA hFE DC current gain VCE = 20 V; IC = 150 mA 25 − − ESBR second breakdown energy L = 25 mH; RBE = 10 Ω; f = 50 Hz 0.5 − − mJ Cc collector capacitance VCB = 24 V; IE = Ie = 0; f = 1 MHz − 3 − pF Cre feedback capacitance VCE = 24 V; IC = 0; f = 1 MHz − 1.3 − pF MBK467 100 MBK468 8 handbook, halfpage handbook, halfpage hFE Cc (pF) 80 6 60 4 40 2 20 0 0 0 0.1 0.2 0.3 0.4 0 0.5 10 IC (A) VCE = 20 V; Tj = 25 °C. IE = ie = 0; f = 1 MHz. Fig.3 Fig.4 DC current gain as a function of collector current, typical values. September 1991 4 20 VCB (V) 30 Collector capacitance as a function of collector-base voltage, typical values. Philips Semiconductors Product specification UHF power transistor BLV99/SL APPLICATION INFORMATION RF performance Tmb = 25 °C in a common emitter class-B test circuit. MODE OF OPERATION f (MHz) c.w. narrow band VCE (V) 900 24 MBK469 10 handbook, halfpage 100 >8 typ. 9.3 > 55 typ. 63 MBK470 3 handbook, halfpage PL (W) ηC (%) (dB) ηc (%) Gp (dB) 2 Gp Gp PL (W) 2 ηC 5 50 1 0 0 0 0 1 2 PL (W) 3 0 0.2 0.3 0.4 PS (W) Class-B operation; VCE = 24 V; f = 900 MHz; Tmb = 25 °C. Class-B operation; VCE = 24 V; f = 900 MHz; Tmb = 25 °C. Fig.5 0.1 Fig.6 Gain and efficiency as functions of load power, typical values. Load power as a function of drive power, typical values. Ruggedness in class-B operation The BLV99/SL is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VCE = 24 V, f = 900 MHz, Tmb = 25 °C, and rated output power. September 1991 5 Philips Semiconductors Product specification UHF power transistor handbook, full pagewidth BLV99/SL ,,,,,, ,,,,,,, ,,,,,, ,,,,,,, T.U.T. C2 50 Ω C7 L4 L1 C1 L5 L9 L8 C3 C10 C8 L2 50 Ω C9 L6 L7 +VCC R1 L3 C4 R2 C5 C6 MDA559 Fig.7 Class-B test circuit at f = 900 MHz. List of components (see test circuit) COMPONENT DESCRIPTION VALUE C1, C3, C8, C9 film dielectric trimmer 1.4 to 5.5 pF C2 multilayer ceramic chip capacitor (note 1) 4.7 pF DIMENSIONS CATALOGUE NO. 2222 809 09001 C4, C6, C10 multilayer ceramic chip capacitor 220 pF C5 63 V electrolytic capacitor 1 µF C7 multilayer ceramic chip capacitor (note 1) 2.2 pF L1 stripline (note 2) 50 Ω 48 mm × 2.4 mm L2 7 turns enamelled 0.4 mm copper wire 50 nH int. dia. 2 mm; leads 2 × 5 mm L3, L7 grade 3B Ferroxcube wideband HF choke L4, L5 stripline (note 2) L6 6 turns enamelled 1 mm copper wire 120 nH L8 stripline (note 2) 50 Ω 31 mm × 2.4 mm L9 stripline (note 2) 50 Ω 29 mm × 2.4 mm R1, R2 0.4 W metal film resistor 10 Ω, 5% 4312 020 36642 35 Ω 14 mm × 4 mm; int. dia. 6 mm; length 10 mm; leads 2 × 5 mm Notes 1. American Technical Ceramics type 100A or capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness 1⁄32 inch. September 1991 6 Philips Semiconductors Product specification UHF power transistor BLV99/SL 170 mm handbook, full pagewidth 70 mm M2 rivets M3 +VCC R2 C5 R1 C4 L7 C6 L3 L1 C1 L6 L2 C2 L4 L5 C3 C7 C10 L9 L8 C8 C9 MDA560 The components are mounted on one side of a copper clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by fixing screws, hollow rivets and copper straps under the emitters. Fig.8 Component layout for 900 MHz class-B test circuit. September 1991 7 Philips Semiconductors Product specification UHF power transistor BLV99/SL MBK471 10 MBK472 80 handbook, halfpage handbook, halfpage ri, xi (Ω) RL, XL (Ω) xi 8 60 XL 6 40 ri 4 RL 20 2 0 800 850 900 950 0 800 1000 f (MHz) 850 900 950 1000 f (MHz) Class-B operation; VCE = 24 V; PL = 2 W; Tmb = 25 °C. Class-B operation; VCE = 24 V; PL = 2 W; Tmb = 25 °C. Fig.9 Fig.10 Load impedance (series components) as a function of frequency , typical values. Input impedance (series components) as a function of frequency, typical values. MBK473 12 handbook, halfpage Gp (dB) 10 8 6 handbook, halfpage 4 Zi ZL 2 MBA451 0 800 850 900 950 1000 f (MHz) Class-B operation; VCE = 24 V; PL = 2 W; Tmb = 25 °C. Fig.12 Power gain as a function of frequency, typical values. Fig.11 Definition of transistor impedance. September 1991 8 Philips Semiconductors Product specification UHF power transistor BLV99/SL PACKAGE OUTLINE Studless ceramic package; 4 leads SOT172D D A Q c D1 H b 4 b1 H 1 3 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 H Q mm 3.71 2.89 3.31 3.04 0.89 0.63 0.16 0.10 5.20 4.95 5.33 5.08 26.17 24.63 1.15 0.88 inches 0.146 0.114 0.13 0.12 0.035 0.006 0.025 0.004 0.205 0.210 0.195 0.200 1.03 0.97 0.045 0.035 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-06-28 SOT172D September 1991 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification UHF power transistor BLV99/SL DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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