DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. BLV194 QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) 900 12.5 16 ≥7 ≥ 50 DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation in the 900 MHz communications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. PINNING - SOT171 PIN alfpage 1 2 3 4 5 6 c handbook, halfpage b MBB012 Top view e MBA931 - 1 DESCRIPTION Fig.1 Simplified outline and symbol. 1 emitter 2 emitter 3 base 4 collector 5 emitter Product and environmental safety - toxic materials 6 emitter This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. January 1993 WARNING 2 Philips Semiconductors Product specification UHF power transistor BLV194 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCEO collector-emitter voltage open base − 16 V VCES collector-emitter voltage base short-circuited − 32 V VEBO emitter-base voltage open collector − 3 V IC DC collector current − 3 A IC(AV) average collector current − 3 A Ptot total power dissipation − 46 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C Tmb = 25 °C MRC103 10 MRC102 60 handbook, halfpage handbook, halfpage Ptot (W) IC (A) (2) (1) 40 (2) (1) 1 20 10−1 1 10 VCE (V) 0 102 0 (1) Tmb = 25 °C. (2) Th = 70 °C. 20 40 60 80 100 120 Th (oC) (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. Fig.3 Power/temperature derating curve. THERMAL RESISTANCE SYMBOL PARAMETER Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink January 1993 3 CONDITIONS THERMAL RESISTANCE Pdis = 46 W; Tmb = 25 °C 3.8 K/W 0.4 K/W Philips Semiconductors Product specification UHF power transistor BLV194 CHARACTERISTICS Tj = 25 °C, unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)CEO collector-emitter breakdown voltage MIN. TYP. MAX. UNIT IB = 0; IC = 40 mA 16 − − V V(BR)CES collector-emitter breakdown voltage IC = 20 mA; VBE = 0 32 − − V V(BR)EBO emitter-base breakdown voltage IC = 0; IE = 5 mA 3 − − V ICER collector leakage current RBE = 700 Ω; VCE = 16 V − − 1 mA hFE DC current gain IC = 1.2 A; VCE = 10 V (note 1) 25 70 − Cc collector capacitance IE = ie = 0; VCB = 12.5 V; f = 1 MHz − 26 − pF Cre feedback capacitance IC = 0; VCB = 12.5 V; f = 1 MHz − 19 − pF Cc-mb collector-mounting base capacitance − 2 − pF Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0.02. MRC098 100 MRC095 60 handbook, halfpage handbook, halfpage hFE Cc (pF) 80 40 60 40 20 20 0 0 0 2 4 IC (A) 6 0 4 VCE = 10 V. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0.02. IE = ie = 0; f = 1 MHz. Fig.4 Fig.5 DC current gain as a function of collector current, typical values. January 1993 4 8 12 VCB (V) 16 Collector capacitance as a function of collector-base voltage, typical values. Philips Semiconductors Product specification UHF power transistor BLV194 APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter test circuit. Rth j-mb = 0.4 K/W. MODE OF OPERATION CW, class-AB f (MHz) VCE (V) ICQ (mA) PL (W) GP (dB) ηC (%) 900 12.5 10 16 ≥7 typ. 8.5 ≥ 50 typ. 57 MRC096 16 handbook, halfpage Gp (dB) 80 MRC101 20 PL (W) handbook, halfpage η (%) 16 60 12 Gp 12 40 8 8 η 20 4 4 0 0 4 8 12 0 20 16 0 0 1 2 3 4 PIN (W) PL (W) Class-AB operation: ICQ = 10 mA; VCE = 12.5 V; f = 900 MHz. Class-AB operation: ICQ = 10 mA; VCE = 12.5 V; f = 900 MHz. Fig.6 Fig.7 Power gain and efficiency as functions of load power, typical values. Load power as a function of input power, typical values. Ruggedness in class-AB operation The BLV194 is capable of withstanding a load mismatch corresponding to VSWR = 20:1 through all phases at rated output power under the following conditions: VCE = 15.5 V; Th = 25 °C; Rth j-mb = 0.4 K/W; f = 900 MHz. January 1993 5 Philips Semiconductors Product specification UHF power transistor BLV194 handbook, full pagewidth C2 50 Ω input C4 L1 C1 L2 C9 C6 L4 L3 L7 C11 L10 L11 C13 L12 C15 C17 DUT C3 C5 L5 C7 C10 C12 C14 50 Ω output C16 MEA985 L6 R1 L8 +VBB C21 C20 C8 L9 R2 +VCC C18 f = 900 MHz. Fig.8 Class-AB test circuit. January 1993 6 C19 Philips Semiconductors Product specification UHF power transistor BLV194 List of components (see test circuit) COMPONENT DESCRIPTION VALUE C1, C8, C17 multilayer ceramic chip capacitor (note 1) 330 pF C3, C5, C14, C16 film dielectric trimmer 1.4 to 5.5 pF C2, C6, C7 multilayer ceramic chip capacitor (note 1) 4.3 pF C4 multilayer ceramic chip capacitor (note 1) 3.9 pF C13, C15 multilayer ceramic chip capacitor (note 1) 4.7 pF C9, C10 multilayer ceramic chip capacitor (note 3) 5.6 pF C11, C12 multilayer ceramic chip capacitor (note 1) 5.6 pF C18 multilayer ceramic chip capacitor 100 nF DIMENSIONS CATALOGUE NO. 2222 809 09001 2222 852 47104 C19, C21 electrolytic capacitor 10 µF, 63 V L1, L12 stripline (note 3) 50 Ω length 24 mm width 2.4 mm L2, L11 stripline (note 3) 50 Ω length 10 mm width 2.4 mm L3 stripline (note 3) 50 Ω length 8 mm width 2.4 mm L4, L7 stripline (note 3) 41 Ω length 3 mm width 3.2 mm L5, L8 4 turns enamelled 1 mm copper wire 45 nH int. dia. 4 mm leads 2 × 5 mm L6, L9 grade 3B Ferroxcube wideband HF choke L10 stripline (note 3) 50 Ω R1, R2 0.25 W metal film resistor 10 Ω 2222 030 37688 4312 020 36642 length 7 mm width 2.4 mm Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed- circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness 1⁄32 inch. January 1993 7 Philips Semiconductors Product specification UHF power transistor BLV194 ndbook, full pagewidth +VCC +VBB C21 L6 C19 L9 C8 C20 C2 C4 L5 C6 L1 L2 L3 C7 L8 C11 C9 C1 C3 C18 R2 R1 L4 L7 L10 C10 C5 C15 C13 C17 L11 L12 C12 C14 C16 MEA984 126 mm handbook, full pagewidth strap strap 70 mm rivets (12x) strap strap mounting screws (8x) MEA983 The components are mounted on one side of a copper-clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by fixing screws and copper straps under the emitter leads. Fig.9 Component layout for 900 MHz class-AB test circuit. January 1993 8 Philips Semiconductors Product specification UHF power transistor BLV194 MRC099 8 MRC100 3 handbook, halfpage handbook, halfpage Zi (Ω) RL ZL (Ω) 6 ri 2 4 xi 2 1 XL 0 −2 840 920 880 f (MHz) 0 840 960 880 920 f (MHz) 960 Class-AB operation: ICQ = 10 mA; VCE = 12.5 V; Th = 25 °C; PL = 16 W. Class-AB operation: ICQ = 10 mA; VCE = 12.5 V; Th = 25 °C; PL = 16 W. Fig.10 Input impedance as a function of frequency (series components), typical values. Fig.11 Load impedance as a function of frequency (series components), typical values. MRC097 12 handbook, halfpage Gp (dB) 8 handbook, halfpage 4 Zi ZL MBA451 0 840 880 920 f (MHz) 960 Class-AB operation: ICQ = 10 mA; VCE = 12.5 V; Th = 25 °C; PL = 16 W. Fig.13 Power gain as a function of frequency, typical values. Fig.12 Definition of transistor impedance. January 1993 9 Philips Semiconductors Product specification UHF power transistor BLV194 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C H1 c b1 2 H 4 6 E1 U2 1 A 3 5 E w1 M A B p Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 E E1 e mm 6.81 6.07 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 9.30 8.99 5.95 5.74 6.00 5.70 3.58 inches w1 w2 w3 0.51 1.02 0.26 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 0.04 0.01 OUTLINE VERSION F JEDEC EIAJ SOT171A January 1993 H1 3.05 11.31 9.27 2.54 10.54 9.01 REFERENCES IEC H p 3.43 3.17 Q q U1 U2 4.32 24.90 6.00 18.42 4.11 24.63 5.70 EUROPEAN PROJECTION ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification UHF power transistor BLV194 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1993 11