BF1107 N-channel single gate MOSFET Rev. 04 — 9 January 2007 Product data sheet 1. Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Currentless RF switch 1.3 Applications n Various RF switching applications such as: u Passive loop through for VCR tuner u Transceiver switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Lins(on) on-state insertion loss VSG = VDG = 0 V; f = 50 MHz to 860 MHz ISLoff off-state isolation Conditions Min Typ Max Unit RS = RL = 50 Ω - - 2.5 dB RS = RL = 75 Ω - - 3.5 dB RS = RL = 50 Ω 30 - - dB RS = RL = 75 Ω 30 - - dB VSG = VDG = 5 V; f = 50 MHz to 860 MHz RDSon drain-source on-state resistance VGS = 0 V; ID = 1 mA - 12 20 Ω VGS(p) gate-source pinch-off voltage VDS = 1 V; ID = 20 µA - −3 −4.5 V BF1107 NXP Semiconductors N-channel single gate MOSFET 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline 1 drain [1] 2 source [1] 3 gate 1 3 3 1 [1] Symbol 2 2 sym120 Drain and source are interchangeable 3. Ordering information Table 3. Ordering information Type number BF1107 Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking Type number Marking code BF1107 S3p 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Max Unit VDS drain-source voltage - 3 V VSD source-drain voltage - 3 V VDG drain-gate voltage - 7 V VSG source-gate voltage - 7 V ID drain current - 10 mA Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C BF1107_4 Product data sheet Min © NXP B.V. 2007. All rights reserved. Rev. 04 — 9 January 2007 2 of 8 BF1107 NXP Semiconductors N-channel single gate MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Rth(j-sp) [1] Parameter Conditions [1] thermal resistance from junction to solder point Typ Unit 260 K/W Soldering point of the gate lead. 7. Static characteristics Table 7. Static characteristics Tj = 25 °C. Symbol Parameter Conditions Min Typ Max Unit V(BR)GSS gate-source breakdown voltage VDS = 0 V; IGS = 0.1 mA 7 - - V VGS(p) gate-source pinch-off voltage VDS = 1 V; ID = 20 µA - −3 −4.5 V IDSX drain cut-off current VGS = −5 V; VDS = 2 V - - 10 µA IGSS gate leakage current VGS = −5 V; VDS = 0 V - - 100 nA Min Typ Max Unit RS = RL = 50 Ω - - 2.5 dB RS = RL = 75 Ω - - 3.5 dB RS = RL = 50 Ω 30 - - dB RS = RL = 75 Ω 30 - - dB - 12 20 Ω VSG = VDG = 5 V - 0.9 - pF VSG = VDG = 0 V - 1.5 2 pF VSG = VDG = 5 V - 0.9 - pF VSG = VDG = 0 V - 1.5 2 pF 8. Dynamic characteristics Table 8. Dynamic characteristics Common gate; Tamb = 25 °C. Symbol Parameter Conditions Lins(on) on-state insertion loss VSG = VDG = 0 V; f = 50 MHz to 860 MHz ISLoff off-state isolation VSG = VDG = 5 V; f = 50 MHz to 860 MHz RDSon drain-source on-state resistance VGS = 0 V; ID = 1 mA Cig input capacitance at gate f = 1 MHz Cog output capacitance at gate f = 1 MHz BF1107_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 — 9 January 2007 3 of 8 BF1107 NXP Semiconductors N-channel single gate MOSFET 001aaf760 0 Lins(on) (dB) 001aaf780 0 (2) ISLoff (dB) −1 (1) −20 −2 −3 −40 (2) −4 (1) −5 10 102 −60 103 102 10 f (MHz) 103 f (MHz) (1) RS = RL = 50 Ω (1) RS = RL = 50 Ω (2) RS = RL = 75 Ω (2) RS = RL = 75 Ω VSG = VDG = 0 V VSG = VDG = 5 V Fig 1. On-state insertion loss as a function of frequency; typical values Fig 2. Off-state isolation as a function of frequency; typical values 001aaf781 0 RLin; RLout (dB) −5 −10 −15 (1) −20 (2) −25 10 102 103 f (MHz) (1) RS = RL = 50 Ω (2) RS = RL = 75 Ω VSG = VDG = 0 V Fig 3. Input and output return loss (on-state) as a function of frequency; typical values BF1107_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 — 9 January 2007 4 of 8 BF1107 NXP Semiconductors N-channel single gate MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC SOT23 JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB Fig 4. Package outline SOT23 BF1107_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 — 9 January 2007 5 of 8 BF1107 NXP Semiconductors N-channel single gate MOSFET 10. Abbreviations Table 9. Abbreviations Acronym Description MOSFET Metal-Oxide Semiconductor Field-Effect Transistor RF Radio Frequency VCR Videocassette Recorder 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BF1107_4 20070109 Product data sheet - BF1107_1107W_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. • Product type BF1107W has been removed from this data sheet. Symbol notation has been adapted to comply with the current guidelines of NXP Semiconductors. BF1107_1107W_3 (9397 750 05776) 19990514 Product data sheet - BF1107_2 BF1107_2 (9397 750 03969) 19980622 Product data sheet - BF1107_N_1 BF1107_N_1 (9397 750 03695) 19980407 Preliminary data sheet - - BF1107_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 — 9 January 2007 6 of 8 BF1107 NXP Semiconductors N-channel single gate MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BF1107_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 — 9 January 2007 7 of 8 BF1107 NXP Semiconductors N-channel single gate MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data. . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Static characteristics. . . . . . . . . . . . . . . . . . . . . Dynamic characteristics . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Legal information. . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information. . . . . . . . . . . . . . . . . . . . . . Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 2 2 2 2 3 3 3 5 6 6 7 7 7 7 7 7 8 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 January 2007 Document identifier: BF1107_4