2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features n n n n Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV 1.3 Applications n n n n Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Min Typ Max Unit VDS drain-source voltage - - 60 V ID drain current - - 300 mA IDM peak drain current single pulse; tp ≤ 10 µs - - 1.2 A RDSon drain-source on-state resistance VGS = 10 V; ID = 500 mA - 1.1 1.6 Ω Conditions 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G S 017aaa000 3. Ordering information Table 3. Ordering information Type number Package Name 2N7002CK Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] 2N7002CK LP* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 2N7002CK_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 11 September 2009 2 of 13 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 60 V VGS gate-source voltage - ±20 V ID drain current Tamb = 25 °C - 300 mA Tamb = 100 °C - 190 mA VGS = 10 V IDM peak drain current Tamb = 25 °C; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature [1] - 1.2 A - 350 mW 150 °C −55 +150 °C −65 +150 °C Source-drain diode IS source current Tamb = 25 °C - 200 mA ISM peak source current Tamb = 25 °C; tp ≤ 10 µs - 1.2 A all pins; human body model; C = 100 pF; R = 1.5 kΩ - 3 kV ElectroStatic Discharge (ESD) electrostatic discharge voltage VESD [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. 017aaa001 120 Pder (%) Ider (%) 80 80 40 40 0 −75 −25 25 75 0 −75 125 175 Tamb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) Fig 1. 017aaa002 120 25 75 125 175 Tamb (°C) ID I der = -------------------- × 100 % I D ( 25°C ) Normalized total power dissipation as a function of ambient temperature Fig 2. Normalized continuous drain current as a function of ambient temperature 2N7002CK_1 Product data sheet −25 © NXP B.V. 2009. All rights reserved. Rev. 01 — 11 September 2009 3 of 13 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa003 10 Limit RDSon = VDS/ID ID (A) tp = 10 µs 1 100 µs 10−1 1 ms DC 10 ms 100 ms 10−2 10−1 1 102 10 VDS (V) Tsp = 25 °C; IDM = single pulse; VGS = 10 V Fig 3. Safe operating area; junction to solder point; continuous and peak drain currents as a function of drain-source voltage 017aaa004 10 ID (A) Limit RDSon = VDS/ID tp = 10 µs 1 100 µs 10−1 1 ms 10 ms DC 100 ms 10−2 10−3 10−1 1 102 10 VDS (V) Tamb = 25 °C; IDM = single pulse; VGS = 10 V Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air 2N7002CK_1 Product data sheet [1] Min Typ Max Unit - 350 500 K/W © NXP B.V. 2009. All rights reserved. Rev. 01 — 11 September 2009 4 of 13 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET Table 6. Thermal characteristics …continued Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point [1] Conditions Min Typ Max Unit - - 150 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 55 - - V 1 1.75 2.5 V - - 100 nA Static characteristics V(BR)DSS drain-source breakdown ID = 10 µA; VGS = 0 V voltage Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C IDSS drain leakage current VDS = 60 V; VGS = 0 V Tj = 25 °C Tj = 150 °C IGSS RDSon gate leakage current drain-source on-state resistance - - 1 µA VGS = ±20 V; VDS = 0 V - - 5 µA VGS = ±10 V; VDS = 0 V - 50 450 nA VGS = ±5 V; VDS = 0 V - - 100 nA Tj = 25 °C - 1.3 3 Ω Tj = 150 °C - 2.8 4.4 Ω VGS = 10 V; ID = 500 mA - 1.1 1.6 Ω ID = 200 mA; VDS = 10 V; VGS = 4.5 V - 1.09 1.3 nC - 0.22 - nC - 0.23 - nC VGS = 0 V; VDS = 25 V; f = 1 MHz - 47.2 55 pF - 11 20 pF - 5 7.5 pF - 8 15 ns - 8 15 ns - 38 50 ns - 22 35 ns 0.47 0.79 1.1 V VGS = 4.5 V; ID = 200 mA Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time VDS = 15 V; RL = 15 Ω; VGS = 10 V; RG = 6 Ω Source-drain diode VSD source-drain voltage IS = 200 mA; VGS = 0 V 2N7002CK_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 11 September 2009 5 of 13 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa005 1.0 (1) ID (A) 017aaa006 10−3 (3) (2) ID (A) (4) 0.8 10−4 0.6 (1) (3) (2) (5) 0.4 10−5 0.2 10−6 0.0 0 1 2 3 4 0 1 2 VDS (V) 3 VGS (V) Tj = 25 °C Tj = 25 °C; VDS = 5 V (1) VGS = 10 V (1) minimum values (2) VGS = 5 V (2) typical values (3) VGS = 4.5 V (3) maximum values (4) VGS = 4 V (5) VGS = 3.5 V Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. 017aaa007 2.5 RDSon (Ω) Sub-threshold drain current as a function of gate-source voltage 017aaa008 4 RDSon (Ω) (1) 2.0 3 (1) (2) 1.5 2 (3) (2) (4) 1.0 (3) 1 0.5 0.0 0 0.2 0.4 0.6 0.8 1.0 0 2 ID (A) Tj = 25 °C 4 6 8 10 VGS (V) ID = 500 mA (1) VGS = 4 V (1) Tj = 150 °C (2) VGS = 4.5 V (2) Tj = 25 °C (3) VGS = 5 V (3) Tj = −55 °C (4) VGS = 10 V Fig 7. Drain-source on-state resistance as a function of drain current; typical values Fig 8. Drain-source on-resistance as a function of gate-source voltage; typical values 2N7002CK_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 11 September 2009 6 of 13 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa009 2.4 017aaa010 3 a VGS(th) (V) (1) 1.8 2 (2) 1.2 (3) 1 0.6 0.0 −60 0 60 120 0 −60 180 0 60 Tj (°C) 120 180 Tj (°C) ID = 0.25 mA; VDS = VGS R DSon a = ----------------------------R DSon ( 25°C ) (1) maximum values (2) typical values (3) minimum values Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 10. Gate-source threshold voltage as a function of junction temperature 017aaa011 102 (1) C (pF) (2) (3) 10 1 10−1 1 102 10 VDS (V) VGS = 0 V; f = 1 MHz (1) Ciss (2) Coss (3) Crss Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 2N7002CK_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 11 September 2009 7 of 13 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa012 10 VGS (V) 017aaa013 1.0 IS (A) 8 0.8 6 0.6 4 0.4 2 0.2 0 0.0 0.4 0.8 1.2 (1) 0.0 0.2 0.4 QG (nC) ID = 200 mA; VDD = 30 V; Tj = 25 °C 0.6 (2) 0.8 (3) 1.0 1.2 VSD (V) VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C (3) Tj = −55 °C Fig 12. Gate-source voltage as a function of gate charge; typical values Fig 13. Source current as a function of source-drain voltage; typical values 2N7002CK_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 11 September 2009 8 of 13 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 14. Package outline SOT23 (TO-236AB) 2N7002CK_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 11 September 2009 9 of 13 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 9. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 15. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 16. Wave soldering footprint SOT23 (TO-236AB) 2N7002CK_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 11 September 2009 10 of 13 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002CK_1 20090911 Product data sheet - - 2N7002CK_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 11 September 2009 11 of 13 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 2N7002CK_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 11 September 2009 12 of 13 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 September 2009 Document identifier: 2N7002CK_1