PHILIPS BFQ18A

DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ18A
NPN 4 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION
BFQ18A
PINNING
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
PIN
DESCRIPTION
Code: FF
page
1
emitter
2
collector
3
base
1
2
Bottom view
3
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCBO
collector-base voltage
open emitter
−
25
V
VCEO
collector-emitter voltage
open base
−
18
V
IC
DC collector current
−
150
mA
Ptot
total power dissipation
up to Ts = 155 °C (note 1)
−
1
W
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 500 MHz;
Tj = 25 °C
4
−
GHz
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 10.7 MHz
1.2
−
pF
dim
intermodulation distortion
IC = 80 mA; VCE = 10 V; RL = 75 Ω;
Vo = 700 mV; measured at
f(p+q-r) = 793.25 MHz
−
−60
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
open emitter
−
25
V
VCBO
collector-base voltage
VCEO
collector-emitter voltage
open base
−
18
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
DC collector current
−
150
mA
Ptot
total power dissipation
−
1
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
up to Ts = 155 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
THERMAL RESISTANCE
up to Ts = 155 °C (note 1)
20 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
hFE
DC current gain
IC = 100 mA; VCE = 10 V
MIN.
25
TYP.
UNIT
−
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
2
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
11
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 10.7 MHz
−
1.2
pF
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 500 MHz
−
4
GHz
dim
intermodulation distortion (see Fig.2)
note 1
−
−60
dB
Note
1. Ic = 80 mA; VCE = 10 V; RL = 75 Ω;
Vp = Vo = 700 mV; fp =795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz.
September 1995
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
MBB361
120
handbook, halfpage
5 µH
handbook, halfpage
1.5 nF
h FE
VBB
200 Ω
5 µH
10 kΩ
10 nF
VCC
80
2.2 nF
10 nF
L1
4.7 nF
DUT
2.2 nF
0.68
pF
0.68 pF
40
RL
12 Ω
0
MBB829
0
40
f = 40 − 860 MHz.
VCE = 10 V; Tj = 25 °C.
Fig.2 Intermodulation distortion MATV test circuit.
Fig.3
MBB357
8
handbook, halfpage
fT
(GHz)
6
4
2
0
0
40
80
120
160
I C (mA)
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
Fig.4
Transition frequency as a function of
collector current.
September 1995
4
80
120
160
I C (mA)
DC current gain as a function of collector
current.
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
b3
E
HE
L
1
2
3
c
b2
w M
b1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b1
b2
b3
c
D
E
e
e1
HE
L
min.
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
0.8
0.13
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT89
September 1995
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
5
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
6