DISCRETE SEMICONDUCTORS DATA SHEET BFQ18A NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ18A PINNING NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for MATV purposes. PIN DESCRIPTION Code: FF page 1 emitter 2 collector 3 base 1 2 Bottom view 3 MBK514 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 18 V IC DC collector current − 150 mA Ptot total power dissipation up to Ts = 155 °C (note 1) − 1 W fT transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz; Tj = 25 °C 4 − GHz Cre feedback capacitance IC = 0; VCE = 10 V; f = 10.7 MHz 1.2 − pF dim intermodulation distortion IC = 80 mA; VCE = 10 V; RL = 75 Ω; Vo = 700 mV; measured at f(p+q-r) = 793.25 MHz − −60 dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT open emitter − 25 V VCBO collector-base voltage VCEO collector-emitter voltage open base − 18 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 150 mA Ptot total power dissipation − 1 W Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C up to Ts = 155 °C (note 1) Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ18A THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS THERMAL RESISTANCE up to Ts = 155 °C (note 1) 20 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS hFE DC current gain IC = 100 mA; VCE = 10 V MIN. 25 TYP. UNIT − Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 2 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 11 pF Cre feedback capacitance IC = 0; VCE = 10 V; f = 10.7 MHz − 1.2 pF fT transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz − 4 GHz dim intermodulation distortion (see Fig.2) note 1 − −60 dB Note 1. Ic = 80 mA; VCE = 10 V; RL = 75 Ω; Vp = Vo = 700 mV; fp =795.25 MHz; Vq = Vo −6 dB; fq = 803.25 MHz; Vr = Vo −6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. September 1995 3 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ18A MBB361 120 handbook, halfpage 5 µH handbook, halfpage 1.5 nF h FE VBB 200 Ω 5 µH 10 kΩ 10 nF VCC 80 2.2 nF 10 nF L1 4.7 nF DUT 2.2 nF 0.68 pF 0.68 pF 40 RL 12 Ω 0 MBB829 0 40 f = 40 − 860 MHz. VCE = 10 V; Tj = 25 °C. Fig.2 Intermodulation distortion MATV test circuit. Fig.3 MBB357 8 handbook, halfpage fT (GHz) 6 4 2 0 0 40 80 120 160 I C (mA) VCE = 10 V; f = 500 MHz; Tj = 25 °C. Fig.4 Transition frequency as a function of collector current. September 1995 4 80 120 160 I C (mA) DC current gain as a function of collector current. Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ18A PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT89 September 1995 EUROPEAN PROJECTION ISSUE DATE 97-02-28 5 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ18A DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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