DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry. = drain 2 = source 3 = gate d g PINNING 1 3 handbook, halfpage 1 s 2 Top view MAM385 Note 1. Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23. Marking code PMBF4391 = p6J PMBF4392 = p6K PMBF4393 = p6G QUICK REFERENCE DATA PMBF4391 PMBF4392 PMBF4393 ± VDS max. 40 40 40 IDSS > 50 25 5 > 4 2 0.5 V < 10 5 3 V Rds on < 30 60 100 Ω Crs < 3.5 3.5 3.5 pF ID = 12 mA; −VGSM = 12 V toff < 20 − − ns ID = 6 mA; −VGSM = 7 V toff < − 35 − ns ID = 3 mA; −VGSM = 5 V toff < − − 50 ns Drain-source voltage V Drain current VDS = 20 V; VGS = 0 mA Gate-source cut-off voltage VDS = 20 V; ID = 1 nA −V(P)GS Drain-source resistance (on) at f = 1 kHz ID = 0; VGS = 0 Feedback capacitance at f = 1 MHz −VGS = 12 V; VDS = 0 Turn-off time VDD = 10 V; VGS = 0 April 1995 2 Philips Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ± VDS max. 40 V Drain-gate voltage VDGO max. 40 V Gate-source voltage −VGSO max. 40 V Gate current (DC) IG max. 50 mA Ptot max. 250 mW Total power dissipation up to Tamb = 40 °C (1) −65 to + 150 °C Storage temperature range Tstg Junction temperature Tj max. 150 °C Rth j-a = 430 K/W THERMAL RESISTANCE From junction to ambient(1) CHARACTERISTICS Tj = 25 °C unless otherwise specified Gate-source voltage VGSon < 1 V VDS = 0 V; −VGS = 20 V −IGSS < 0.1 nA VDS = 0 V; −VGS = 20 V; Tamb = 150 °C −IGSS < 0.2 µA IG = 1 mA; VDS = 0 Gate-source cut-off current PMBF4391 Drain current VDS = 20 V; VGS = 0 PMBF4392 PMBF4393 IDSS > < 50 150 25 75 5 mA 30 mA −V(BR)GSS > 40 40 40 V −V(P)GS > < 4 10 2 5 0.5 V 3 V ID = 12 mA; VGS = 0 VDSon < 0.4 − − V ID = 6 mA; VGS = 0 VDSon < 0.4 − V ID = 3 mA; VGS = 0 VDSon < − − 0.4 V rds on < 30 − 100 Ω IDSX < 0.1 − − nA IDSX < − 0.1 − nA −VGS = 5 V IDSX < − − 0.1 nA −VGS = 12 V IDSX < 0.2 − − µA IDSX < − 0.2 − µA IDSX < − − 0.2 µA Gate-source breakdown voltage −IG = 1 µA; VDS = 0 Gate-source cut-off voltage ID = 1 nA; VDS = 20 V Drain-source voltage (on) Drain-source resistance (on) ID = 0; VGS = 0; f = 1 kHz; Tamb = 25 °C Drain cut-off current −VGS = 12 V −VGS = 7 V −VGS = 7 V −VGS = 5 V April 1995 VDS = 20 V VDS = 20 V; Tamb = 150 °C 3 Philips Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs y-parameters (common source) VDS = 20 V; VGS = 0; f = 1 MHz; Tamb = 25 °C PMBF4391 Input capacitance PMBF4392 PMBF4393 Cis < 14 14 14 pF Feedback capacitance −VGS = 12 V ; VDS = 0 Crs < 3.5 − − pF −VGS = 7 V ; VDS = 0 Crs < − 3.5 − pF −VGS = 5 V ; VDS = 0 Crs < − − 3.5 pF Switching times VDD = 10 V ; VDS = 0 Conditions ID and −VGSoff ID = 12 6 3 mA −VGS off = 12 7 5 V RL = 750 1550 3150 Ω Rise time tr < 5 5 5 ns Turn on time ton < 15 15 15 ns Fall time tf < 15 20 30 ns Turn off time toff < 20 35 50 ns Note 1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm. handbook, full pagewidth VGS = 0 V 10% Vi −VGS off 90% ton toff tr tf 90% Vo 10% MBK288 Fig.2 Switching times waveforms. April 1995 4 Philips Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs Pulse generator: tr VDD 10 nF RL SAMPLING SCOPE 50 Ω 50 Ω MBK289 Fig.3 Test circuit. MDA245 300 handbook, halfpage Ptot (mW) 200 100 0 0 40 80 120 200 160 Tamb (°C) Fig.4 Power derating curve. April 1995 tf < 0.5 ns tp = 100 µs δ = 0.01 Ri 10 µF DUT 0.5 ns Oscilloscope: 1 µF 50 Ω handbook, halfpage < 5 = 50 Ω Philips Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 April 1995 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 7