IGC142T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turnoff • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC142T120T6RM 1200V 150A This chip is used for: • medium power modules C Applications: • medium power drives G Die Size Package 11.31 x 12.56 m m 2 sawn on foil E MECHANICAL PARAMETER Raster size 11.31 x 12.56 Emitter pad size (incl. gate pad) 11.04 x 9.80 Gate pad size Area total / active mm 2 1.31 x 0.81 142.1 / 113.1 Thickness 120 µm Wafer size 150 mm 90 grd Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal 94 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, <500µm Reject ink dot size Recommended storage environment ∅ 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693B, Edition 1, 31.10.2007 IGC142T120T6RM MAXIMUM RATINGS Parameter Symbol Collector-Emitter voltage, T j=25 °C Value Uni t 1200 V 1) A VC E DC collector current, limited by Tj max IC Pulsed collector current, tp limited by Tj max I c, p u l s 450 A Gate -Emitter voltage VG E ±20 V Maximum junction temperature Tv j , m a x -40 ... +175 °C Short circuit data 2 ) V GE = 15V, V CC = 800V, Tvj = 150°C tp , m a x 10 µs I F , m a x = 3 00A, V R , m a x = 1 200V, T vj,op ≤ 150°C Reverse bias safe operating area 2 ) (RBSOA) 1) depending on thermal properties of assembly 2) not subject to producti on test - verified by design/characterization STATIC CHARACTERISTICS (tested on wafer ), Tj =25 °C Parameter Symbol Value Conditions min. Unit typ. max. Collector-Emitter breakdown voltage V(BR)CES VGE=0V , I C= 6 mA 1200 Collector-Emitter saturation voltage VCE(sat) VGE=15V, IC=150A 1.55 1.8 2.05 Gate -Emitter threshold voltage VGE(th) IC =6mA , VGE =VCE 5.0 5.8 6.5 Zero gate voltage collector current ICES VCE=1200V , VGE =0V 20 µA Gate -Emitter leakage current IGES VC E=0V , VGE =20V 600 nA Integrated gate resistor RGint V Ω 5 ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design / characterization) Parameter Symbol Conditions Value min. typ. Input capacitance C iss VC E = 2 5 V , 9300 Output capacitance C oss V GE =0V, 580 C rss f=1MHz 510 Reverse transfer capacitance Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693B, Edition 1, 31.10.2007 max. Unit pF IGC142T120T6RM SWITCHING CHARACTERISTICS inductive load (not subject to production test - verified by design / characterization ) Parameter Symbol Turn-on delay time td ( o n ) Rise time tr Conditions 1) T j = 1 2 5°C VC C =600V, Value min. typ. td ( o f f ) Fall time tf 1) Unit tbd tbd ns I C =150A, Turn-off delay time max. V GE =- 1 5 / 1 5 V , tbd R G= - - - Ω tbd values also influenced by parasitic L- and C- in measurement and package. Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693B, Edition 1, 31.10.2007 IGC142T120T6RM CHIP DRAWING Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693B, Edition 1, 31.10.2007 IGC142T120T6RM FURTHER ELECTRICAL CHARACTERISTICS Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Further technical information about the performance of this chip in module tbd is given exemplarily at www.infineon.com/igbtmodules. DESCRIPTION AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life -support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life -support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693B, Edition 1, 31.10.2007