PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability. Features CW Performance, Single Side 17.4 60 17.2 55 17.0 50 45 Gain 16.6 40 16.4 35 16.2 16.0 15.8 30 2320 MHz 2350 MHz 2380 MHz Efficiency 25 Efficiency (%) Gain (dB) VDD = 30 V, IDQ = 660 mA 16.8 PTFB241402F Package H-37248-4 • Broadband internal matching • Typical CW performance, single side - Output power (1dB compression) = 70 W - Efficiency = 55% • Increased negative gate-source voltage range for improved performance in Doherty amplifiers • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability • Capable of handling 10:1 VSWR @ 30 V, 70 W (CW) output power • Pb-free and RoHS compliant 20 15.6 15 40 41 42 43 44 45 46 47 48 49 Output Power (dBm) RF Characteristics Two-tone Measurements (tested in Infineon test fixture, combined outputs) VDD = 30 V, IDQ = 1200 mA, POUT = 110 W PEP, ƒ = 2370 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17 — dB Drain Efficiency ηD 34.5 37 — % Intermodulation Distortion IMD — –32 –30 dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 13 Rev. 03, 2010-04-19 PTFB241402F Customer-Specific Spec — Not for General Release DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 30 V, V GS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.3 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 660 mA VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 140 W CW ) RθJC 0.38 °C/W Ordering Information Type and Version Package Outline Package Description Shipping PTFB241402F V1 H-37248-4 Thermally-enhanced earless flange Tray PTFB241402F V1 R250 H-37248-4 Thermally-enhanced earless flange Tape & Reel, 250 pcs *See Infineon distributor for future availability. Data Sheet 2 of 13 Rev. 03, 2010-04-19 PTFB241402F Customer-Specific Spec — Not for General Release Typical Performance (data taken in a production test fixture) CW Performance, Single Side CW Sweep at P-1dB, Single Side VDD = 30 V, IDQ = 660 mA VDD = 30 V, IDQ = 660 mA 17.5 60 18.0 60 40 15.0 30 -25°C 25°C 90°C Efficiency 40 41 42 43 44 45 46 47 48 50 16.5 40 Efficiency 16.0 20 40 49 Output Power (dBm) 41 42 43 44 45 46 47 48 Small Signal CW Gain & Input Return Loss, Single Side ƒ = 2350 MHz, IDQ = 660 mA VDD = 30 V, IDQ = 660 mA 60 18.0 Gain 16.5 40 Efficiency 30 V DD = 32 V V DD = 30 V V DD = 28 V 15.5 15.0 20 Gain -5 17.0 -10 16.5 -15 16.0 -20 15.5 -25 IRL 15.0 2150 10 39 40 41 42 43 44 45 46 47 48 49 50 2250 2350 2450 -30 2550 Frequency (MHz) Output Power (dBm) Data Sheet 0 17.5 Power Gain (dB) 50 Efficiency (%) 17.0 16.0 49 Output Power (dBm) CW Gain & Efficiency vs. Output Power & VDD, Single Side 17.5 Power Gain (dB) 30 2320 MHz 2350 MHz 2380 MHz 15.5 20 14.0 17.0 Input Return Loss (dB) Gain Gain (dB) Gain (dB) 16.0 Efficiency (%) 50 17.0 Drain Efficiency (%) Gain 3 of 13 Rev. 03, 2010-04-19 PTFB241402F Customer-Specific Spec — Not for General Release Typical Performance (cont.) Two-tone Performance at Various IDQ, Single Side Two-tone Performance at Selected Frequencies, Single Side ƒ = 2350 MHz, VDD = 30 V, IDQ = Varying VDD = 30 V, IDQ = 660 mA, 1 MHz Spacing 50 -25 -30 660 mA -35 710 mA -40 760 mA -45 Efficiency 2320 MHz 2350 MHz 2380 MHz 40 610 mA Efficiency (%) 3rd Order IMD (dBc) 0 560 mA 30 -10 -20 IMD3 20 -30 10 -40 IMD (dBc) -20 -50 0 -55 -50 IMD5 -10 -60 34 36 38 40 42 44 46 -60 38 48 Average Output Power (dBm) 39 40 41 42 43 44 45 46 47 Average Output Power (dBm) Wimax Performance, Single Side ƒ = 2.32 GHz ƒ = 2.35 GHz ƒ = 2.38 GHz Efficiency (%) 20 -20 -25 15 -30 10 -35 Efficiency 5 EVM (dBc) 25 VDD = 30 V, IDQ = 680 mA, modulation = 64 QAM2/3, channel bandwidth = 1.75 MHz, sample rate = 2 MHz) -40 EVM 0 -45 24 26 28 30 32 34 36 38 40 Average Output Power (dBm) Data Sheet 4 of 13 Rev. 03, 2010-04-19 PTFB241402F Customer-Specific Spec — Not for General Release Broadband Circuit Impedance Z Source D Z Load Frequency S G G Z Load Ω MHz R jX R jX 2320 27.0 –16.0 3.0 –4.1 2350 25.0 –8.8 3.0 –4.5 2380 27.5 –5.7 2.8 –4.5 0 .1 0.5 0.4 0.3 0.2 0.1 D LOA D S T OW AR NGT H 0.0 Z0 = 50 Ω Z Source Z Load 2380 MHz 2320 MHz 2380 MHz 0.1 EL E WAV - W AV E LE NGT H S T OW D Z Source Ω <--- 2320 MHz 0. 2 Data Sheet 5 of 13 Rev. 03, 2010-04-19 PTFB241402F Customer-Specific Spec — Not for General Release Reference Circuit This reference circuit is designed to test only one side at a time. This block diagram shows the configuration for testing Side 2. To test Side 1, move capacitors C807 and C901 to close the circuit to Side 1. 8 C804 1000 pF C805 1000 pF C803 1000 pF S1 VDD 1 In Out NC NC 4 5 2 3 6 R802 2000 Ohm 7 R803 10 Ohm R801 1200 Ohm S2 2 S6 1 3 C 4 S B 3 R805 3000 Ohm E R804 1300 Ohm TL801 TL820 TL826 TL828 2 3 2 TL815 TL829 1 1 2 3 1 3 C802 10000000 pF S4 1 3 4 2 TL834 L801 22 nH TL836 R806 10 Ohm TL830 TL809 TL814 TL811 TL807 Pin G1 GATE DUT 3 TL803 C808 1.2 pF 2 1 SIDE 1 TL802 TL813 2 3 1 TL843 C807 16 pF TL835 TL816 RF IN 2 3 1 C806 1.2 pF TL840 TL839 2 3 1 TL838 TL808 TL810 TL812 TL804 2 TL831 TL806 Pin G2 GATE DUT 1 3 TL825 TL823 R808 10 Ohm R807 3000 Ohm 1 TL821 3 2 3 TL833 1 TL841 TL842 SIDE 2 2 L802 22 nH S3 TL832 S5 3 2 1 4 C801 10000000 pF 3 TL837 TL824 TL819 TL818 3 2 1 R809 10 Ohm TL805 TL827 2 TL817 TL822 3 3 1 2 B 2 4 1 4 0 2 e f _ b d i n _ 0 3 - 15 1 - 2010 Reference circuit input schematic for ƒ = 2380 MHz Data Sheet 6 of 13 Rev. 03, 2010-04-19 PTFB241402F Customer-Specific Spec — Not for General Release Reference Circuit (cont.) C907 100000000 pF TL936 TL938 TL943 TL939 TL937 3 VDD 2 1 C909 10000000 pF TL944 TL902 TL942 TL940 TL941 TL908 3 TL929 2 1 3 2 1 2 1 S1 1 3 3 4 C904 2 7.5 pF TL930 C905 2.4 pF 2 TL931 3 1 TL924 TL916 Pin D1 DRAIN DUT TL946 TL915 TL914 TL917 TL912 3 2 1 SIDE 1 TL920 TL921 1 TL918 RF OUT 3 2 C901 7.5 pF TL919 TL925 Pin D2 DRAIN DUT TL945 2 TL906 TL911 TL910 TL913 1 B 2 4 1 4 0 2 e f _b d o u t _ 0 3 - 15 - 2 0 1 0 3 SIDE 2 TL903 C906 2.4 pF 2 TL905 3 1 C902 7.5 pF TL904 TL926 TL901 TL927 TL922 TL923 TL909 TL928 3 2 1 2 1 2 1 3 C908 10000000 pF TL932 TL907 TL935 VDD TL934 2 TL933 3 S2 1 3 4 2 1 3 C903 100000000 pF Reference circuit output schematic for ƒ = 2380 MHz Data Sheet 7 of 13 Rev. 03, 2010-04-19 PTFB241402F Customer-Specific Spec — Not for General Release Reference Circuit (cont.) R802 C803 VDD R804 S2 RO4350, .020 R801 (60) + S6 C907 S1 VDD R803 C805 C804 R805 C909 C802 S1 S4 L801 C905 R806 C904 C808 C807 C806 C901 R807 R808 L802 C906 C902 C801 S3 S5 R809 C908 S2 VDD C903 PTFB241402_IN_01 (60) RO4350, .020 PTFB241402_OUT_01 B241402 e f _ c d _ 0 4- 1 9 - 2 0 1 0 Reference circuit assembly diagram (not to scale)* * Gerber Files for this circuit available on request Data Sheet 8 of 13 Rev. 03, 2010-04-19 PTFB241402F Customer-Specific Spec — Not for General Release Reference Circuit (cont.) Circuit Assembly Information DUT PCB PTFB241402F LTN/PTFB241402F LDMOS Transistor 0.508 mm [.020"] thick, εr = 3.66 Rogers 4350, 1 oz. copper Component Description Suggested Manufacturer P/N C801, C802 Capacitor, 10 µF Digi-Key 490-3905-6-ND C803, C804, C805 Capacitor, 1000 pF Digi-Key PCC1772CT-ND C806, C808 Chip capacitor, 1.2 pF ATC ATC100A1R2BW150XB C807 Chip capacitor, 16 pF ATC ATC100A160FW150XB L801, L802 Inductor, 22 nH Digi-Key TKS2349CT-ND R801 Resistor, 1200 Ω Digi-Key P1.2KGCT-ND R802 Resistor, 2000 Ω Digi-Key P2.0KECT-ND R803, R809 Resistor, 10 Ω Digi-Key P10ECT-ND R804 Resistor, 1300 Ω Digi-Key P1.3KGCT-ND R805, R807 Resistor, 3000 Ω Digi-Key P3.0KECT-ND R806, R808 Resistor, 10 Ω Digi-Key P10GCT-ND S1 Voltage Regulator National Semiconductor LM7805 S2, S3 Potentiometer, 2k Ω Digi-Key 3224W-202ECT-ND S4, S5 EMI filter, 2 - 4 A, 0.1 - 2.2 µF Murata NFM18P S6 Transistor Infineon Technologies BCP56 C901, C902, C904 Chip capacitor, 7.5 pF ATC ATC100B7R5BW500XB C903, C907 Capacitor, 100 µF Digi-Key PCE3718CT-ND C905, C906 Chip capacitor, 2.4 pF ATC ATC100A2R4BW150XB C908, C909 Capacitor, 10 µF Digi-Key 490-1891-2-ND S1, S2 EMI filter, 6 A, 1.5 µF Murata NFM55P Input Output Data Sheet 9 of 13 Rev. 03, 2010-04-19 PTFB241402F Customer-Specific Spec — Not for General Release Reference Circuit (cont.) Electrical Characteristics at 2380 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Input TL801 0.114 λ, 35.71 Ω W = 1.905, L = 8.479 W = 75, L = 334 TL802, TL838 0.005 λ, 51.98 Ω W = 1.087, L = 0.356 W = 43, L = 14 W = 1.087 W = 43 TL803, TL804 TL805 0.063 λ, 35.71 Ω W = 1.905, L = 4.674 W = 75, L = 184 W1 = 3.810, W2 = 5.842 W1 = 150, W2 = 230 W = 1.087, L = 7.163 W = 43, L = 282 TL809 W1 = 1.087, W2 = 1.087 W1 = 43, W2 = 43 TL810 W1 = 1.087, W2 = 5.842 W1 = 43, W2 = 230 TL806, Tl807 TL808 0.094 λ, 51.98 Ω TL811, TL812 0.011 λ, 14.61 Ω W1 = 5.842, W2 = 5.842, W3 = 0.762 W1 = 230, W2 = 230, W3 = 30 TL813, TL839 0.018 λ, 51.98 Ω W1 = 1.087, W2 = 1.087, W3 = 1.397 W1 = 43, W2 = 43, W3 = 55 TL814 0.066 λ, 14.61 Ω W = 5.842, L = 4.699 W = 230, L = 185 TL815, TL817, TL818, TL820, TL821, TL823 0.026 λ, 35.71 Ω W1 = 1.905, W2 = 1.905, W3 = 1.905 W1 = 75, W2 = 75, W3 = 75 TL816 0.146 λ, 51.98 Ω W = 1.087, L = 11.118 W = 43, L = 438 TL819 0.068 λ, 35.71 Ω W = 1.905, L = 5.080 W = 75, L = 200 TL822, TL829 0.029 λ, 35.71 Ω W = 1.905, L = 2.184 W = 75, L = 86 TL824, TL837 0.033 λ, 35.71 Ω W = 1.905, L = 2.477 W = 75, L = 98 TL825 0.010 λ, 35.71 Ω W = 1.905, L = 0.711 W = 75, L = 28 TL826, TL827 0.010 λ, 35.71 Ω W1 = 1.905, W2 = 1.905, W3 = 0.762 W1 = 75, W2 = 75, W3 = 30 TL828 0.146 λ, 35.71 Ω W = 1.905, L = 10.897 W = 75, L = 429 TL830 0.094 λ, 51.98 Ω W = 1.087, L = 7.163 W = 43, L = 282 TL831 0.066 λ, 14.61 Ω W = 5.842, L = 4.699 W = 230, L = 185 TL832, TL834 0.027 λ, 35.71 Ω W = 1.905, L = 2.032 W = 75, L = 80 TL833 0.036 λ, 35.71 Ω W = 1.905, L = 2.705 W = 75, L = 107 TL835 0.014 λ, 44.26 Ω W1 = 1.397, W2 = 1.397, W3 = 1.087 W1 = 55, W2 = 55, W3 = 43 TL836 0.032 λ, 35.71 Ω W = 1.905, L = 2.408 W = 75, L = 95 TL840, TL843 0.010 λ, 51.98 Ω W = 1.087, L = 0.762 W = 43, L = 30 TL841, TL842 0.026 λ, 35.71 Ω W = 1.905, L = 1.905 W = 75, L = 75 TL901, TL902 0.077 λ, 28.85 Ω W = 2.540, L = 5.690 W = 100, L = 24 TL903 0.031 λ, 28.85 Ω W = 2.540, L = 2.286 W = 100, L = 90 TL904 0.036 λ, 28.85 Ω W = 2.540, L = 2.667 W = 100, L = 105 TL905, TL931 0.019 λ, 28.85 Ω W1 = 2.540, W2 = 2.540, W3 = 1.397 W1 = 100, W2 = 100, W3 = 55 TL906 0.078 λ, 14.61 Ω W = 5.842, L = 5.588 W = 230, L = 220 W1 = 0.003, W2 = 0.003, Offset = 0.001 W1 = 3, W2 = 102, Offset = 50 W1 = 2.540, W2 = 2.540, W3 = 5.080 W1 = 100, W2 = 100, W3 = 200 Output TL907 TL908, TL909 0.069 λ, 28.85 Ω TL910 0.063 λ, 51.98 Ω TL911, TL912 W = 1.087, L = 4.826 W = 43, L = 190 W = 1.087 W = 43 *table continued next page Data Sheet 10 of 13 Rev. 03, 2010-04-19 PTFB241402F Customer-Specific Spec — Not for General Release Reference Circuit (cont.) Electrical Characteristics at 2380 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils W1 = 1.087, W2 = 5.842, W1 = 43, W2 = 230 W = 5.842, L = 5.588 W = 230, L = 220 Output TL913, TL914 TL915 0.078 λ, 14.61 Ω TL916, TL925 W1 = 3.810, W2 = 5.842 W1 = 150, W2 = 230 TL917 0.063 λ, 51.98 Ω W = 1.087, L = 4.826 W = 43, L = 190 TL918 0.014 λ, 51.98 Ω W1 = 1.087, W2 = 1.087, W3 = 1.087 W1 = 43, W2 = 43, W3 = 43 TL919, TL920 0.027 λ, 51.98 Ω W = 1.087, L = 2.032 W = 43, L = 80 TL921 0.117 λ, 51.98 Ω W = 1.087, L = 8.890 W = 43, L = 350 TL922, TL940 0.009 λ, 28.85 Ω W = 2.540, L = 0.655 W = 100, L = 26 TL923, TL926, TL942 TL944 0.025 λ, 28.85 Ω W1 = 2.540, W2 = 2.540, W3 = 1.829 W1 = 100, W2 = 100, W3 = 72 TL924 0.031 λ, 28.85 Ω TL927, TL929 W = 2.540, L = 2.286 W = 100, L = 90 W = 2.540 W = 100 TL928, TL941 0.086 λ, 28.85 Ω W = 2.540, L = 6.363 W = 100, L = 251 TL930 0.036 λ, 28.85 Ω W = 2.540, L = 2.667 W = 100, L = 105 TL932, TL936 0.073 λ, 16.19 Ω W = 5.182, L = 5.207 W = 204, L = 205 TL933, TL937 0.050 λ, 28.85 Ω W = 2.540, L = 3.670 W = 100, L = 145 TL934, TL939 0.038 λ, 28.85 Ω W1 = 2.540, W2 = 2.540, W3 = 2.794 W1 = 100, W2 = 100, W3 = 110 TL935, TL938 0.136 λ, 28.85 Ω W = 2.540, L = 10.020 W = 100, L = 395 W1 = 0.003, W2 = 0.003, Offset = –0.001 W1 = 3, W2 = 102, Offset = –50 W1 = 5.842, W2 = 5.842, W3 = 2.540 W1 = 230, W2 = 230, W3 = 100 TL943 TL945, TL946 0.036 λ, 14.61 Ω Pinout Diagram Gate Drain G1 D1 Gate Drain G2 D2 H -37248 - 4_pd_ 03-23-2010 Source (flange) Lead connections for PTFB241402F Data Sheet 11 of 13 Rev. 03, 2010-04-19 PTFB241402F Customer-Specific Spec — Not for General Release Package Outline Specifications Package H-37248-4 (8.890 [.350]) CL 2X 45° X 2.720 [45° X .107] +0.127 2X 4.826±0.510 [.190±0.020] D1 4X R0.762 -0.380 D2 [ R.030 LID 9.398 [.370] FLANGE 9.779 [.385] +0.005 -0.015 C L G1 ] 19.431±0.510 [.765±0.020] G2 4X 3.810 [.150] 2X 12.700 [.500] SPH 1.575 [.062] 19.812±0.200 [.780±0.008] 1.016 [.040] H-37248-4_po_02-18-2010 3.759 C L +0.254 -0.127 +0.010 ] [ .148 -0.005 S 20.574 [.810] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 = drains; S = source; G1, G2 = gates. 5. Lead thickness: 0.102 +0.076/–0.025 [0.004+0.003/–0.001]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 12 of 13 Rev. 03, 2010-04-19 PTFB241401F V1 Customer-Specific Spec – Not for General Release Revision History: 2010-04-19 2010-03-23 Previous Version: Data Sheet Page Subjects (major changes since last revision) All Revised package option We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2010-04-19 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 13 of 13 Rev. 03, 2010-04-19