INFINEON PTF210101M

PTF210101M
High Power RF LDMOS Field Effect Transistor
10 W, 2110 – 2170 MHz
Description
The PTF210101M is an unmatched 10-watt GOLDMOS ® FET intended for
class AB base station applications in the 2110 to 2170 MHz band. This
LDMOS device offers excellent gain, efficiency and linearity performance in
a small footprint.
PTF210101M
Package PG-RFP-10
Features
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 180 mA, ƒ = 2170 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 3.84 MHz bandwidth
-25
•
Typical WCDMA performance
- Average output power = 2.0 W
- Gain = 15 dB
- Efficiency = 20%
- ACPR = –45 dB
•
Typical CW performance
- Output Power at P–1dB = 10 W
- Gain = 14 dB
- Efficiency = 50%
•
Integrated ESD protection:
Human Body Model Class 1 (minimum)
•
Excellent thermal stability
•
Low HCI drift
•
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
•
Pb-free and RoHS compliant
30
-30
25
-35
20
-40
15
ACPR
-45
10
-50
5
-55
Drain Efficiency (%)
Adjacent Channel
Power Ratio (dBc)
Efficiency
0
24
28
32
36
Average Output Power (dBm)
RF Characteristics
Two-Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
15
—
—
dB
Drain Efficiency
ηD
35
—
—
%
Intermodulation Distortion
IMD
—
—
–28
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.1, 2009-02-18
PTF210101M
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
On-State Resistance
VGS = 10 V, V DS = 0.1 A
RDS(on)
—
0.83
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 180 mA
VGS
2.5
3.2
4.0
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
150
°C
Total Device Dissipation
PD
19
W
0.15
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 10 W DC )
RθJC
6.5
°C/W
Ordering Information
Type
Package Outline
Package Description
Marking
PTF210101M
PG-RFP-10
Molded plastic, SMD
0211
*See Infineon distributor for future availability.
Data Sheet
2 of 8
Rev. 02.1, 2009-02-18
PTF210101M
Typical Performance (data taken in production test fixture)
Power Sweep, CW Conditions
Two-Tone Drive-up
VDD = 28 V, IDQ = 180 mA, ƒ = 2170 MHz
VDD = 28 V, IDQ = 180 mA, ƒ1 = 2169, ƒ2 = 2170 MHz
60
-20
Intermodulation Distortion (dBc)
17
Efficiency
50
40
Gain
14
30
13
20
12
10
11
0
15
20
25
30
35
40
IM3
-30
-40
IM5
-50
IM7
-60
-70
-80
26
45
28
Output Power (dBm)
32
34
36
38
40
42
Two-Tone Power Sweep
Broadband Performance
VDD = 28 V, IDQ = 180 mA, ƒ1 = 2169, ƒ 2 = 2170 MHz
VDD = 28 V, IDQ = 180 mA, POUT = 41 dBm
16
45
60
-10
15
Gain (dB), Efficiency (%)
40
30
14
25
13
20
Efficiency
15
Efficiency (%)
35
Gain
Gain (dB)
30
Output Power, PEP (dBm)
10
12
5
11
0
26
28
30
32
34
36
38
40
-11
40
-12
Return Loss
30
20
10
-13
-14
-15
Gain
0
2100
42
Output Power, PEP (dBm)
Data Sheet
Efficiency
50
2120
2140
2160
Input Return Loss (dB)
15
Drain Efficiency (%)
Gain (dB)
16
-16
2180
Frequency (MHz)
3 of 8
Rev. 02.1, 2009-02-18
PTF210101M
Typical Performance (cont.)
Voltage Sweep
Gate-Source Voltage vs. Temperature
IDQ = 180 mA, ƒ = 2110 MHz
Voltage normalized to typical gate voltage,
series show current.
Normalized Bias Voltage
Output Power (dBm)
42
41
40
39
38
37
20
22
24
26
28
30
32
1.04
0.05 A
1.03
0.28 A
0.51 A
1.02
0.74 A
1.01
0.97 A
1.00
1.20 A
0.99
0.98
0.97
0.96
34
-20
0
Supply Voltage (V)
20
40
60
80
100
Case Temperature (ºC)
Broadband Circuit Impedance
D
Z Source
Z Load
G
S
Z Source Ω
Frequency
Data Sheet
Z Load Ω
MHz
R
jX
R
jX
2080
2.4
–6.0
2.1
–3.3
2110
2.1
–5.8
2.1
–3.1
2140
1.8
–5.2
2.1
–2.9
2170
1.6
–4.9
2.0
–2.8
2200
1.4
–4.5
2.0
–2.6
4 of 8
Rev. 02.1, 2009-02-18
PTF210101M
Reference Circuit
C1
0.001µF
R1
1.2K V
QQ1
LM7805
V DD
Q1
BCP56
C2
0.001µF
R3
220 V
C3
0.001µF
R4
2KV
R5
10 V
R6
10 V
C4
10 µF
35V
C5
0.1µF
R7
1K V
C6
10µF
35V
C7
10pF l8
C12
10pF
R8
220 V
l1
l2
C8
1.2pF
l4
l5
VDD
C15
10µF
50V
C16
10pF
DUT
l3
C14
1µF
l11
l7
C9
10pF
RF_IN
C13
0.1µF
l6
l9
C10
1.4pF
l10
l12
C11
2.4pF
l13
RF_OUT
210101
m _sch
R2
1.3K V
Reference circuit schematic for ƒ = 2170 MHz
Circuit Assembly Information
DUT
PCB
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11
l12
l13
PTF210101M
0.76 mm [.030"] thick, εr = 3.48
LDMOS Transistor
Rogers 4350
1 oz. copper
Electrical Characteristics at 2170 MHz1
Dimensions: L x W (mm)
Dimensions: L x W (in.)
λ, 50.0 Ω
λ, 50.0 Ω
λ, 50.0 Ω
λ, 9.6 Ω
λ, 9.6 Ω
λ, 9.6 Ω
λ, 81.0 Ω
λ, 81.0 Ω
λ, 12.9 Ω
λ, 12.9 Ω
λ, 67.0 Ω
λ, 50.0 Ω
λ, 50.0 Ω
3.99 x 1.63
11.63 x 1.63
2.84 x 1.63
1.93 x 14.27
5.21 x 14.27
2.16 x 14.27
15.11 x 0.69
16.66 x 0.69
1.19 x 10.16
17.93 x 10.16
16.76 x 1.02
1.68 x 1.63
6.68 x 1.63
0.048
0.139
0.034
0.025
0.068
0.028
0.176
0.193
0.015
0.233
0.197
0.020
0.072
0.157
0.458
0.112
0.076
0.205
0.085
0.595
0.656
0.047
0.706
0.660
0.066
0.263
x
x
x
x
x
x
x
x
x
x
x
x
x
0.064
0.064
0.064
0.562
0.562
0.562
0.027
0.027
0.400
0.400
0.040
0.064
0.064
1Electrical characteristics are rounded.
Data Sheet
5 of 8
Rev. 02.1, 2009-02-18
PTF210101M
Reference Circuit (cont.)
R5
R3
R4
C4
+
10
35V
C5
R6 R7
C7
+
10
35 V
C6
C1
C3
LM
R2
R1
QQ1
C2
VDD
Q1
C12
C13
C15
C14
R8
RF_IN
RF_OUT
C8
C9
C16
C10
C11
210101M_C_02
2 1 0 1 0 1 m _ a s s y
Reference circuit assembly diagram (not to scale)*
Component
Description
Suggested Manufacturer
P/N or Comment
C1, C2, C3
C4, C6
C5, C13
C7, C9, C12, C16
C8
C10
C11
C14
C15
Q1
QQ1
R1
R2
R3, R8
R4
R5, R6
R7
Capacitor, 0.001 µF
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
Ceramic capacitor, 10 pF
Ceramic capacitor, 1.2 pF
Ceramic capacitor, 1.4 pF
Ceramic capacitor, 2.4 pF
Capacitor, 1.0 µF
Tantalum capacitor, 10 µF, 50 V
Transistor
Voltage regulator
Chip Resistor 1.2 k-ohms
Chip Resistor 1.3 k-ohms
Chip Resistor 220 ohms
Potentiometer 2 k-ohms
Chip Resistor 10 ohms
Chip Resistor 1 k-ohms
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
ATC
ATC
ATC
Garrett Electronics
Infineon Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
PCC1772CT-ND
PCS6106TR-ND
PCC104BCT-ND
100B 100
100B 1R2
100B 1R4
100B 2R4
920C105
TPSE106K050R0400
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P221ECT-ND
3224W-202ETR-ND
P10ECT-ND
P1KECT-ND
*Gerber Files for this circuit available on request
Data Sheet
6 of 8
Rev. 02.1, 2009-02-18
PTF210101M
Package Outline Specifications
0.22 ±0.05
0.08
M
C
6° MAX.
0.1 A
A
3 ±0.1
0.09
0.5
H
+0.08
0.125–0
.05
1.1 MAX.
0.85 ±0.1
0.15 MAX.
Package PG-RFP-10 (TSSOP-10 Outline)
+0.15
0.42 –0.10
A B C
4.9
0.25
M
A B C
PG-RFP-10
10
6
1
5
3 ±0.1
B
Index marking
Diagram Notes—unless otherwise specified:
1.
All tolerances ± 0.127 [.005] unless specified otherwise.
2. Dimensions are mm
3.
Lead thickness: 0.09
4. Pins: 1 – 5 = gate, underside = source, 6 – 10 = drain
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
7 of 8
Rev. 02.1, 2009-02-18
PTF210101M
Confidential—Limited Distribution
Revision History:
2009-02-18
2005-12-05, Data Sheet
Previous version:
Data Sheet
Page
6
Subjects (major changes since last revision)
Fixed typing error
1
Revise package information and photo
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Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
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To request other information, contact us at:
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or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-18
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
8 of 8
Rev. 02.1, 2009-02-18