BFG505; BFG505/X NPN 9 GHz wideband transistors Rev. 04 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 9 GHz wideband transistors FEATURES BFG505; BFG505/X PINNING • High power gain DESCRIPTION PIN • Low noise figure BFG505 • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS BFG505/X 1 collector collector 2 base emitter 3 emitter base 4 emitter emitter RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). handbook, 2 columns 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. 1 MARKING 2 Top view TYPE NUMBER MSB014 CODE BFG505 %ME BFG505/X %MK Fig.1 Simplified outline SOT143B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS open emitter MIN. TYP. MAX. UNIT − − 20 V − − 15 V VCBO collector-base voltage VCES collector-emitter voltage RBE = 0 IC collector current (DC) − − 18 mA Ptot total power dissipation Ts ≤ 130 °C − − 150 mW hFE DC current gain VCE = 6 V; IC = 5 mA 60 120 250 Cre feedback capacitance VCB = 6 V; IC = ic = 0; f = 1 MHz − 0.2 − fT transition frequency VCE = 6 V; IC = 5 mA; f = 1 GHz − 9 − GHz GUM maximum unilateral power gain VCE = 6 V; IC = 5 mA; Tamb = 25 °C; f = 900 MHz − 20 − dB VCE = 6 V; IC = 5 mA; Tamb = 25 °C; f = 2 GHz − 13 − dB pF S212 insertion power gain VCE = 6 V; Ic = 5 mA; Tamb = 25 °C; f = 900 MHz 16 17 − dB F noise figure Γs = Γopt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 °C; f = 900 MHz − 1.2 1.7 dB Γs = Γopt; VCE = 6 V; Ic = 5 mA; Tamb = 25 °C; f = 900 MHz − 1.6 2.1 dB Γs = Γopt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 °C; f = 2 GHz − 1.9 − dB Rev. 04 - 22 November 2007 2 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 18 mA Ptot total power dissipation Ts ≤ 130 °C; see Fig.2; note 1 − 150 mW Tstg storage temperature range −65 150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point note 1 VALUE UNIT 290 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. MRA638-1 200 handbook, halfpage Ptot (mW) 150 100 50 0 0 50 100 150 200 Ts (°C) Fig.2 Power derating curve. Rev. 04 - 22 November 2007 3 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − TYP. − MAX. 50 UNIT ICBO collector cut-off current VCB = 6 V; IE = 0 nA hFE DC current gain IC = 5 mA; VCE = 6 V; see Fig.3 60 120 250 Ce emitter capacitance IC = ic = 0 VEB = 0.5 V; f = 1 MHz − 0.4 − pF Cc collector capacitance VCB = 6 V; IE = ie = 0; f = 1 MHz − 0.3 − pF Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4 − 0.2 − pF fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz; see Fig.5 − 9 − GHz GUM maximum unilateral power gain; note 1 IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 20 − dB Ic = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz − 13 − dB S212 insertion power gain Ic = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz 16 17 − dB F noise figure Γs = Γopt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 1.2 1.7 dB Γs = Γopt; IC = 5 mA; VCE = 6 V; Tamb = 25 °C; f = 900 MHz − 1.6 2.1 dB Γs = Γopt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz − 1.9 − dB PL1 output power at 1 dB gain compression IC = 5 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C; f = 900 MHz − 4 − dBm ITO third order intercept point note 2 − 10 − dBm Notes S 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 ) 2. VCE = 6 V; IC = 5 mA; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz. Rev. 04 - 22 November 2007 4 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors MRA639 250 handbook, halfpage BFG505; BFG505/X MRA640 0.4 handbook, halfpage hFE Cre (pF) 200 0.3 150 0.2 100 0.1 50 0 10−3 10−2 10−1 1 10 102 IC (mA) 0 2 4 6 8 10 VCB (V) IC = 0; f = 1 MHz. VCE = 6 V. Fig.3 0 DC current gain as a function of collector current. MRA641 12 handbook, halfpage Fig.4 Feedback capacitance as a function of collector-base voltage. MRA642 25 handbook, halfpage fT gain (dB) VCE = 6 V (GHz) GUM 20 VCE = 3 V 8 MSG 15 10 4 5 0 10−1 1 10 IC (mA) 102 0 4 8 12 IC (mA) VCE = 6 V; f = 900 MHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Tamb = 25 °C; f = 1 GHz. Fig.5 0 Transition frequency as a function of collector current. Fig.6 Gain as a function of collector current. Rev. 04 - 22 November 2007 5 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X MRA643 25 MRA644 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 20 40 MSG Gmax 15 GUM 30 MSG GUM 10 20 5 10 0 0 4 8 12 IC (mA) VCE = 6 V; f = 2 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 0 10 103 MRA645 50 104 Fig.8 Gain as a function of frequency. MRA650 5 handbook, halfpage handbook, halfpage Fmin GUM f = 900 MHz (dB) 4 40 1000 MHz MSG 30 3 20 2 Gmax 10 0 10 f (MHz) VCE = 6 V; IC = 1.25 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.7 Gain as a function of collector current. gain (dB) 102 102 103 f (MHz) 1 104 VCE = 6 V; IC = 5 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 0 10−1 Gass 20 Gass (dB) 15 2000 MHz 10 5 2000 MHz Fmin 1000 MHz 900 MHz 500 MHz 0 1 IC (mA) −5 10 VCE = 6 V. Fig.9 Gain as a function of frequency. Fig.10 Minimum noise figure and associated available gain as functions of collector current. Rev. 04 - 22 November 2007 6 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors MRA651 5 andbook, halfpageIC = 1.25 mA 20 Gass 5 mA Fmin (dB) 4 (dB) 15 Gass 3 10 2 5 5 mA 1 BFG505; BFG505/X Fmin 0 1.25 mA 0 102 103 −5 104 f (MHz) VCE = 6 V. Fig.11 Minimum noise figure and associated available gain as functions of frequency. pot. unst. region handbook, full pagewidth 90° 1.0 1 135° 2 0.5 0.8 45° 0.6 stability 0.2 circle 180° Fmin = 1. 2 dB 0.2 0 0.5 1 0.4 5 ΓOPT F = 1.5 dB 2 5 0.2 0° 0 F = 2 dB F = 3 dB 0.2 −135° 0.5 5 2 −45° 1 MRA652 Zo = 50 Ω. VCE = 6 V; Ic = 1.25 mA; f = 900 MHz. 1.0 −90° Fig.12 Noise circle figure. Rev. 04 - 22 November 2007 7 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X handbook, full pagewidth 90° pot. unst. region 1.0 1 135° 0.8 45° 2 0.5 0.6 ΓOPT 0.2 stability circle 180° 0.4 5 Fmin = 1. 9 dB 0.2 0.2 0 0.5 F = 2.5 dB 1 2 5 0° 0 F = 3 dB F = 4 dB 5 0.2 −135° 0.5 2 −45° 1 MRA653 1.0 −90° Zo = 50 Ω. VCE = 6 V; Ic = 1.25 mA; f = 2000 MHz. Fig.13 Noise circle figure. Rev. 04 - 22 November 2007 8 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 3 GHz 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 5 0.2 0.5 −135° 2 −45° 1 MRA646 1.0 −90° VCE = 6 V; IC = 5 mA. Zo = 50 Ω. Fig.14 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 15 12 9 6 0° 3 −135° −45° −90° MRA647 VCE = 6 V; IC = 5 mA. Fig.15 Common emitter forward transmission coefficient (S21). Rev. 04 - 22 November 2007 9 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 0.25 0.20 0.15 0.10 0° 0.05 −135° −45° −90° MRA648 VCE = 6 V; IC = 5 mA. Fig.16 Common emitter reverse transmission coefficient (S12). 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 40 MHz 0 5 0.2 3 GHz −135° 0.5 2 −45° 1 MRA649 VCE = 6 V; IC = 5 mA. Zo = 50 Ω. 1.0 −90° Fig.17 Common emitter output reflection coefficient (S22). Rev. 04 - 22 November 2007 10 of 13 NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 SOT143B Rev. 04 - 22 November 2007 11 of 13 BFG505; BFG505/X NXP Semiconductors NPN 9 GHz wideband transistors Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 04 - 22 November 2007 12 of 13 BFG505; BFG505/X NXP Semiconductors NPN 9 GHz wideband transistors Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFG505_X_N_4 20071122 Product data sheet - BFG505_X_3 Modifications: • Marking table on page 2; changed code BFG505_X_3 (9397 750 04348) 19981002 Product specification - BFG505XR_CNV_2 BFG505XR_CNV_2 19950901 Product specification - BFG505XR_1 BFG505XR_1 19921101 Product specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 November 2007 Document identifier: BFG505_X_N_4