PHILIPS BFR92A

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR92A
NPN 5 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under discrete semiconductors, SC14
1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
FEATURES
DESCRIPTION
• High power gain
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT92.
• Low noise figure
• Low intermodulation distortion.
3
page
PINNING
APPLICATIONS
• RF wideband amplifiers and
oscillators.
PIN
1
Top view
DESCRIPTION
1
base
2
emitter
3
collector
2
MSB003
Marking code: P2p.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
−
20
V
VCEO
collector-emitter voltage
−
15
V
IC
collector current (DC)
−
25
mA
Ptot
total power dissipation
Ts ≤ 95 °C
−
300
mW
Cre
feedback capacitance
IC = ic = 0; VCE = 10 V; f = 1 MHz
0.35
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz
5
−
GHz
GUM
maximum unilateral power gain
IC = 15 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
14
−
dB
IC = 15 mA; VCE = 10 V; f = 2 GHz;
Tamb = 25 °C
8
−
dB
F
noise figure
IC = 5 mA; VCE = 10 V; f = 1 GHz;
Γs = Γopt; Tamb = 25 °C
2.1
−
dB
VO
output voltage
dim = −60 dB; IC = 14 mA; VCE = 10 V;
RL = 75 Ω; fp + fq − fr = 793.25 MHz
150
−
mV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
collector current (DC)
−
25
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Ts ≤ 95 °C; note 1; see Fig.3
Note
1. Ts is the temperature at the soldering point of the collector pin.
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1
VALUE
UNIT
260
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector leakage current
CONDITIONS
IE = 0; VCB = 10 V
MIN.
−
TYP.
−
MAX.
50
UNIT
nA
hFE
DC current gain
IC = 15 mA; VCE = 10 V; see Fig.4
40
90
−
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz;
see Fig.5
−
0.6
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 10 V; f = 1 MHz
−
1.2
−
pF
Cre
feedback capacitance
IC = ic = 0; VCE = 10 V; f = 1 MHz
−
0.35
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz;
see Fig.6
−
5
−
GHz
GUM
maximum unilateral power
gain (note 1)
IC = 15 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
−
14
−
dB
IC = 15 mA; VCE = 10 V; f = 2 GHz;
Tamb = 25 °C
−
8
−
dB
IC = 5 mA; VCE = 10 V; f = 1 GHz;
Γs = Γopt; Tamb = 25 °C;
see Figs 13 and 14
−
2.1
−
dB
IC = 5 mA; VCE = 10 V; f = 2 GHz;
Γs = Γopt; Tamb = 25 °C;
see Figs 13 and 14
−
3
−
dB
F
noise figure
VO
output voltage
notes 2 and 3
−
150
−
mV
d2
second order intermodulation
distortion
notes 2 and 4; see Fig.16
−
−50
−
dB
Notes
2
S 21
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB˙ .
2 
2

 1 – S 11   1 – S 22 
2. Measured on the same die in a SOT37 package (BFR90A).
3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C
Vp = VO at dim = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB; fq = 803.25 MHz;
Vr = VO −6 dB; fr = 805.25 MHz;
measured at fp + fq − fr = 793.25 MHz.
4. IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C
Vp = 60 mV at fp = 250 MHz;
Vq = 60 mV at fq = 560 MHz;
measured at fp + fq = 810 MHz.
1997 Oct 29
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
2.2 nF
handbook, full pagewidth
2.2 nF
VCC
VBB
L3
33 kΩ
1 nF
L2
1 nF
L1
1 nF
75 Ω
input
300 Ω
DUT
18 Ω
3.3 pF
75 Ω
output
0.82 pF
MBB269
L1 = L3 = 5 µH choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
MEA425 - 1
MCD074
120
400
handbook,
halfpage
handbook, halfpage
Ptot
(mW)
h FE
300
80
200
40
100
0
0
0
50
100
150
0
200
10
Ts ( o C)
20
I C (mA)
30
VCE = 10 V; Tj = 25 °C.
Fig.4
Fig.3 Power derating curve.
1997 Oct 29
4
DC current gain as a function of collector
current; typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
MBB274
MBB275
1
6
handbook, halfpage
handbook, halfpage
Cc
(pF)
fT
(GHz)
0.8
4
0.6
0.4
2
0.2
0
0
0
5
10
15
VCB (V)
20
0
10
20
IC = ic = 0; f = 1 MHz; Tj = 25 °C.
VCE = 10 V; f = 500 MHz; Tamb = 25 °C.
Fig.5
Fig.6
Collector capacitance as a function of
collector-base voltage; typical values.
MBB278
handbook,30
halfpage
I C (mA)
Transition frequency as a function of
collector current; typical values.
MBB279
handbook,30
halfpage
gain
30
gain
(dB)
(dB)
MSG
20
20
MSG
G UM
G UM
10
10
0
0
5
10
15
20
0
25
IC (mA)
0
5
10
15
VCE = 10 V; f = 500 MHz.
MSG = maximum stable gain;
GUM = maximum unilateral power gain.
VCE = 10 V; f = 1 GHz.
MSG = maximum stable gain;
GUM = maximum unilateral power gain.
Fig.7
Fig.8
Gain as a function of collector current;
typical values.
1997 Oct 29
5
25
20
I C (mA)
Gain as a function of collector current;
typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
MBB280
handbook,50
halfpage
MBB281
handbook,50
halfpage
gain
gain
(dB)
(dB)
40
40
G UM
G UM
30
30
MSG
MSG
20
20
G max
10
10
G max
0
102
10
103
f (MHz)
0
104
IC = 5 mA; VCE = 10 V.
GUM = maximum unilateral power gain; MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.9
10
102
103
f (MHz)
104
IC = 15 mA; VCE = 10 V.
GUM = maximum unilateral power gain; MSG = maximum stable gain;
Gmax = maximum available gain.
Gain as a function of frequency;
typical values.
Fig.10 Gain as a function of frequency;
typical values.
MBB277
MBB276
30
40
handbook, halfpage
handbook,
halfpage
B
S
(mS)
BS
(mS)
F = 3.5 dB
20
3.0
20
F = 3.0 dB
10
2.5
2.5
0
1.8
0
2.0
2.4
10
1.7
20
20
30
40
0
20
40
60
80
G S (mS)
0
IC = 4 mA; VCE = 10 V; f = 800 MHz.
40
G S (mS)
IC = 14 mA; VCE = 10 V; f = 800 MHz.
Fig.11 Circles of constant noise figure;
typical values.
1997 Oct 29
20
Fig.12 Circles of constant noise figure;
typical values.
6
60
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
MCD081
4
MCD082
4
handbook, halfpage
handbook, halfpage
f = 2 GHz
F
(dB)
I C = 15 mA
F
(dB)
3
10 mA
3
5 mA
1 GHz
500 MHz
2
2
1
1
0
1
10
0
10 2
10 2
I C (mA)
10 3
f (MHz)
10 4
VCE = 10 V.
VCE = 10 V.
Fig.13 Minimum noise figure as a function of
collector current; typical values.
Fig.14 Minimum noise figure as a function of
frequency; typical values.
MBB282
−45
−50
d2
(dB)
−40
−55
−45
−60
−50
−65
−55
d im
(dB)
−70
10
20
I C (mA)
−60
10
30
VCE = 10 V; VO = 150 mV (43.5 dBmV);
fp + fq−fr = 793.25 MHz; Tamb = 25 °C.
Measured in MATV test circuit (see Fig.2).
20
I C (mA)
30
VCE = 10 V; VO = 60 mV; fp + fq−fr = 810 MHz; Tamb = 25 °C.
Measured in MATV test circuit (see Fig.2).
Fig.15 Intermodulation distortion;
typical values.
1997 Oct 29
MBB283
−35
handbook, halfpage
handbook, halfpage
Fig.16 Second order intermodulation distortion;
typical values.
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0.2
0
0.5
1200
1000
−j
1
2
5
10
∞
800
500
10
200
5
0.2
100 MHz
2
0.5
MBB270
1
IC = 14 mA; VCE = 10 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.17 Common emitter input reflection coefficient (S11); typical values.
90°
handbook, full pagewidth
120°
150°
100
MHz
60°
30°
200
500
800
1200
1000
180°
+ϕ
10
20
30
0°
−ϕ
30°
150°
60°
120°
90°
MBB273
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.18 Common emitter forward transmission coefficient (S21); typical values.
1997 Oct 29
8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
90°
handbook, full pagewidth
120°
60°
1200 MHz
typ
150°
1000
30°
800
500
+ϕ
200
100
180°
0.05
0.1
0.15
0°
−ϕ
30°
150°
60°
120°
MBB271
90°
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.19 Common emitter reverse transmission coefficient (S12); typical values.
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
−j
2
5
10
1000 800
500
1200
100
200 MHz
0.2
∞
10
5
2
0.5
1
MBB272
IC = 14 mA; VCE = 10 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.20 Common emitter output reflection coefficient (S22); typical values.
1997 Oct 29
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1997 Oct 29
EUROPEAN
PROJECTION
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 29
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
127127/00/02/pp12
Date of release: 1997 Oct 29
Document order number:
9397 750 02766