PHILIPS PMBTH81

DISCRETE SEMICONDUCTORS
DATA SHEET
PMBTH81
PNP 1 GHz switching transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
FEATURES
PINNING
• Low cost
PIN
• High transition frequency.
PMBTH81
DESCRIPTION
Code: V31
1
base
DESCRIPTION
2
emitter
The PMBTH81 is a general purpose
silicon pnp transistor, encapsulated in
a SOT23 plastic envelope. Its
complement is the PMBTH10.
3
collector
3
fpage
1
2
Top view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
20
V
Ptot
total power dissipation
Ts = 45 °C (note 1)
−
400
mW
Cce
collector-emitter capacitance
VCB = 10 V; IB = 0; f = 1 MHz
−
0.65
pF
Ccb
collector-base capacitance
VCB = 10 V; IE = 0; f = 1 MHz
−
0.85
pF
fT
transition frequency
VCE = 10 V; IC = 5 mA;
f = 100 MHz; Tamb = 25 °C
600
−
MHz
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
20
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current
−
40
mA
Ptot
total power dissipation
Ts = 45 °C (note 1)
−
400
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
150
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth j-s
THERMAL RESISTANCE
from junction to soldering point (note 1)
260 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 10 µA; IE = 0
20
−
V
V(BR)CEO
collector-emitter breakdown
voltage
open base; IC = 1 mA; IB = 0
20
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 10 µA; IC = 0
3
−
V
VCE sat
collector-emitter saturation voltage
IC = 5 mA; IB = 0.5 mA
−
0.5
V
VBE on
base-emitter ON voltage
VCE = 10 V; IC = 5 mA
−
0.9
V
ICBO
collector-base cut-off current
VCB = 10 V; IE = 0
−
100
nA
IEBO
emitter-base cut-off current
VEB = 2 V; IC = 0
−
100
nA
hFE
DC current gain
VCE = 10 V; IC = 5 mA
60
−
Cce
collector-emitter capacitance
VCB = 10 V; IB = 0; f = 1 MHz
−
0.65
pF
Ccb
collector-base capacitance
VCB = 10 V; IE = 0; f = 1 MHz
−
0.85
pF
fT
transition frequency
VCE = 10 V; IC = 5 mA;
f = 100 MHz; Tamb = 25 °C
600
−
MHz
September 1995
3
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
MRA568
−30
b11
(mS)
−50
IC = 4 mA
MRA566
120
handbook, halfpage
930 MHz
450 MHz
250 MHz
handbook, halfpage
IC =
100 MHz
12 mA
b21
(mS)
250 MHz
100 MHz
8 mA
80
450 MHz
−70
4 mA
8 mA
930
MHz
40
−90
12 mA
−110
−20
20
60
100
0
−120
140
g11 (mS)
VCB = 10 V; Tamb = 25 °C.
−80
−40
0
40
g21 (mS)
VCB = 10 V; Tamb = 25 °C.
Fig.2 Common base input admittance (Y11).
Fig.3 Forward transfer admittance (Y21).
MRA570
0
handbook, halfpage
b12
(mS)
MRA569
12
handbook, halfpage
100 MHz
b22
(mS)
250 MHz
−2
930 MHz
IC = 4 mA
450 MHz
8
IC = 12 mA
−4
8 mA
8 mA
4 mA
12 mA
4
−6
450 MHz
930 MHz
250 MHz
100 MHz
−8
−2.5
−2
−1.5
−1
0
−0.5
0
g12 (mS)
0
2
3
4
g22 (mS)
VCB = 10 V; Tamb = 25 °C.
VCB = 10 V; Tamb = 25 °C.
Fig.4 Reverse transfer admittance (Y12).
September 1995
1
Fig.5 Common base output admittance (Y22).
4
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
MRA567
1000
gain
handbook,
halfpage
bandwidth
product
(MHz) 800
600
400
200
0
0
4
8
12
16
20
IC (mA)
VCE =10 V; f = 100 MHz.
Fig.6
Current gain-bandwidth product as a
function of collector current.
September 1995
5
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
September 1995
EUROPEAN
PROJECTION
6
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
7