ETC BFS17/T1

DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17
NPN 1 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17
DESCRIPTION
NPN transistor in a plastic SOT23 package.
handbook, 2 columns
2
1
APPLICATIONS
• A wide range of RF applications such as:
– Mixers and oscillators in TV tuners
– RF communications equipment.
3
MSB003
Top view
PINNING
PIN
DESCRIPTION
Marking code: E1p.
1
base
2
emitter
3
collector
Fig.1 SOT23.
QUICK REFERENCED DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
25
V
VCEO
collector-emitter voltage
open base
−
15
V
IC
DC collector current
−
25
mA
Ptot
total power dissipation
up to Ts = 70 °C; note 1
−
300
mW
fT
transition frequency
IC = 25 mA; VCE = 5 V; f = 500 MHz; Tj = 25 °C
1
−
GHz
F
noise figure
IC = 2 mA; VCE = 5 V; RS = 50 Ω; f = 500 MHz;
Tj = 25 °C
4.5
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
25
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
25
mA
ICM
peak collector current
−
50
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
up to Ts = 70 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Note to the Quick reference data and the Limiting values
1. Ts is the temperature at the soldering point of the collector pin.
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
VALUE
UNIT
260
K/W
up to Ts = 70 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
ICBO
collector cut-off current
IE = 0; VCB = 10 V
−
−
10
hFE
DC current gain
IC = 2 mA; VCE = 1 V
25
90
−
IC = 25 mA; VCE = 1 V
25
90
−
IC = 2 mA; VCE = 5 V; f = 500 MHz
−
1
−
UNIT
nA
fT
transition frequency
IC = 25 mA; VCE = 5 V; f = 500 MHz
−
1.6
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
0.8
1.5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
−
2
pF
GHz
Cre
feedback capacitance
IC = 1 mA; VCE = 5 V; f = 1 MHz
−
0.65
−
pF
F
noise figure
IC = 2 mA; VCE = 5 V; RS = 50 Ω;
f = 500 MHz
−
4.5
−
dB
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17
MEA395
100
MEA396
2.0
Cc
(pF)
handbook, halfpage
handbook, halfpage
hFE
1.6
1.2
50
0.8
0.4
0
0
0
10
20
IC (mA)
30
0
VCE = 1 V; Tj = 25 °C.
Fig.2
10
20
VCB (V)
30
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
DC current gain as a function of
collector current.
Fig.3
MEA393
2
Collector capacitance as a function of
collector-base voltage.
MEA397
10
handbook, halfpage
handbook, halfpage
fT
(GHz)
F
(dB)
1
5
0
0
0
10
20
IC (mA)
30
0
VCE = 5 V; f = 500 MHz; Tj = 25 °C.
Fig.4
8
12
16
20
IC (mA)
VCE = 5 V; RS = 50 Ω; f = 500 MHz; Tj = 25 °C.
Transition frequency as a function of
collector current.
September 1995
4
Fig.5
4
Minimum noise figure as a function of
collector current.
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17
PACKAGE OUTLINE
Package description
SOT23
D
E
B
A
X
c
HE
v M A
3
Q
A
A1
1
2
e1
bp
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-10-18
SOT23
September 1995
EUROPEAN
PROJECTION
5
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
6