PHILIPS TEA5762H

INTEGRATED CIRCUITS
DATA SHEET
TEA5762
Self Tuned Radio (STR)
Product specification
Supersedes data of 1995 Jun 23
File under Integrated Circuits, IC01
1999 Aug 04
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
FEATURES
• High impedance MOSFET input on AM
• The tuning system has an optimized IC partitioning both
from application (omitting interferences) and flexibility
(removable front panel option) point of view: the tuning
synthesizer is on-chip with the radio
• Wide supply voltage range of 2.5 to 12 V
• The tuning quality is superior and requires no IF-counter
for stop-detection; it is insensitive to ceramic filter
tolerances
• Low output distortion
• Low current consumption 18 mA at AM and FM
(including tuning synthesizer for AM)
• Low noise figure
• Due to the new tuning concept, the tuning is
independent of the channel spacing.
• In combination with the microcontroller, fast, low-power
operation of preset mode, manual-search, auto-search
and auto-store are possible
GENERAL DESCRIPTION
• The local (internal) controller function facilitates reduced
and simplified microcontroller software
The TEA5762 is a 44-pin integrated AM-radio and FM-IF
and demodulator part including a novel tuning concept.
The radio part is based on the TEA5712.
• The high integration level means fewer external
components with regard to the communication between
the radio and the microcontroller and a simple and small
Printed-Circuit Board (PCB)
It is designed for the use with an external FM front-end.
The new tuning concept combines the advantages of hand
tuning with electronic facilities and features. User
‘intelligence’ is incorporated into the tuning algorithm and
an improvement of the analog signal processing is used for
the AFC function.
• The inherent FUZZY LOGIC behaviour of the Self
Tuned Radio (STR), which mimics hand tuning and
yields a potentially fast yet reliable tuning operation
• The level of the incoming signal at which the radio must
lock is software programmable
• Two programmable ports
• FM-on/off port to control the external FM front-end
• High selectivity with distributed IF gain
• Soft mute
• Signal dependent stereo-blend
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
TEA5762H
QFP44
1999 Aug 04
DESCRIPTION
plastic quad flat package; 44 leads (lead length 1.3 mm);
body 10 × 10 × 1.75 mm
2
VERSION
SOT307-2
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC1
supply voltage
2.5
−
12
V
VCC2
supply voltage for tuning
−
−
12
V
Vtune
tuning voltage
0.7
−
VCC2 − 0.75
V
ICC1
supply current
AM mode
12
15
18
mA
FM mode
13
16
19
mA
AM mode
−
3.3
−
mA
FM mode
IDD
supply current
−
2.7
−
mA
ICC2
supply current for tuning in preset
mode (band-end to band-end)
−
−
800
µA
Tamb
ambient temperature
−15
−
+60
°C
AM performance; note 1
V10
AF output voltage
Vi1 = 5 mV
36
45
70
mV
Vi1
RF sensitivity input voltage
S/N = 26 dB
40
55
70
µV
THD
total harmonic distortion
Vi1 = 1 mV
−
0.8
2.0
%
FM performance; note 2
V10
AF output voltage
Vi4 = 5 mV
40
48
57
mV
Vi4
IF sensitivity input voltage
V10 = −3 dB; V10 = 0 dB
at Vi4 = 10 mV
−
20
30
µV
THD
total harmonic distortion
IF filter
SFE10.7MS3A20K-A
−
0.3
0.8
%
Vi4 = 30 mV
26
30
−
dB
MPX performance; note 3
αcs
channel separation
Notes
1. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; fi = 1 MHz; m = 0.3; fmod = 1 kHz; measured in Fig.9 with S1 in position A; S2
in position B; unless otherwise specified.
2. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; fi = 10.7 MHz; ∆fm = 22.5 kHz; fm = 1 kHz; measured in Fig.9 with S2 in
position A; S3 in position A; unless otherwise specified.
3. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; Vi3(L + R) = 155 mV; Vpilot = 15.5 mV; fi = 1 kHz; measured in Fig.9 with S2 in
position B; S3 in position B; unless otherwise specified.
1999 Aug 04
3
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BUSCLOCK
35
33
29
28
IFGND FMDEM
27
17
18
FSI
21
16
39
FM-ON/OFF
FM
IF1
TUNER
SWITCH
FM
DETECTOR
FM
IF2
PILOT
DETECTOR
24
PILFIL
MO/ST
19 kHz
12
38
34
7
VSTAB(A)
VSTAB(B)
VCC1
AM/FM
INDICATOR
STATUS
REGISTER
SHIFT REGISTER
STABILIZER
9
DECODER
1
4
up
IN-LOCK
down DETECTOR
level
LAST-STATION
MEMORY
5
COUNTI
PRESCALER
stereo
14
15
4
PROGRAMMABLE
COUNTER
MULTIPLEXER
FM SEQUENTIAL
CIRCUIT
CHARGE
PUMP
AM
AFRO
mono
SDS
13
MUTE
hard mute
MUTE
level
25
XTAL
26
WINDOW
DETECTOR
CRYSTAL
OSCILLATOR
AFC
TEA5762
19
20
DGND
32
2
AM
FRONT
END
AM
OSCILLATOR
6
AM
IF
40 41
AM-IFI/O2
AM-IFI1
44
31
AGC
30
P1 P0
Fig.1 Block diagram.
8
22 10
TUNE
AFO
VCC2
42
11
RFGND
MPXI
3
RFGND
MBE815
Product specification
AM-MIXER
36
AFC
V/I
CONVERTER
AM
DETECTOR
AGC
AFC(n)
AFC(p)
TEA5762
AMOSC
AM
MIXER
handbook, full pagewidth
AM-RFI
AFLO
MATRIX
stereo
CGND
VCO
38 kHz
23
VDDD
RIPPLE
LFI
PLL
Philips Semiconductors
FM-IFO1
37
DATA
WRITEENABLE
Self Tuned Radio (STR)
FM-IFI1
BLOCK DIAGRAM
1999 Aug 04
FM-IFI2
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
PINNING
SYMBOL
PIN
DESCRIPTION
RIPPLE
1
ripple capacitor input
AM-RFI
2
AMRF input
RFGND
3
RF ground and substrate
CGND
4
counter ground
COUNTI
5
counter input
AMOSC
6
parallel tuned AM-oscillator circuit to ground
VCC1
7
supply voltage
TUNE
8
tuning output current
VCO
9
voltage controlled oscillator input
AFO
10
AM/FM AF output (output impedance typical 5 kΩ)
MPXI
11
stereo decoder input (input impedance typical 150 kΩ)
LFI
12
loop filter input
MUTE
13
mute input
AFLO
14
left channel output (output impedance typical 4.3 kΩ)
AFRO
15
right channel output (output impedance typical 4.3 kΩ)
PILFIL
16
pilot detector filter input
IFGND
17
ground of IF, detector and MPX stage
FMDEM
18
ceramic discriminator input
AFC(n)
19
AFC negative output
AFC(p)
20
AFC positive output
FSI
21
field strength indicator
VCC2
22
supply voltage for tuning
VDDD
23
digital supply voltage
MO/ST
24
mono/stereo and tuning indication output
XTAL
25
crystal input
DGND
26
digital ground
BUS-CLOCK
27
bus-clock input
DATA
28
bus data input/output
WRITE-ENABLE
29
bus write-enable input
P0
30
programmable output port (P0)
P1
31
programmable output port (P1)
AFC
32
450 kHz LC-input circuit for AM AFC
FM-IFI2
33
FMIF input 2 (input impedance typical 330 Ω)
VSTAB(B)
34
internal stabilized supply voltage (B)
FM-IFO1
35
FMIF output 1 (input impedance typical 330 Ω)
AM-IFI/O2
36
input/output to IFT; output: current source
FM-IFI1
37
FMIF input 1 (input impedance typical 330 Ω)
VSTAB(A)
38
internal stabilized supply voltage (A)
FM-ON/OFF
39
FM ON/OFF port
AM-MIXER
40
open-collector output to IFT
1999 Aug 04
5
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
SYMBOL
TEA5762
PIN
DESCRIPTION
not connected
AGC
44
AGC capacitor input
40 AM-MIXER
41 AM-IFI1
42 RFGND
43 n.c.
44 AGC
handbook, full pagewidth
RIPPLE
1
33 FM-IFI2
AM-RFI
2
32 AFC
RFGND
3
31 P1
CGND
4
30 P0
COUNTI
5
29 WRITE-ENABLE
TEA5762H
AMOSC
6
28 DATA
VCC1
7
27 BUS-CLOCK
TUNE
8
26 DGND
VCO
9
25 XTAL
6
VCC2 22
FSI 21
AFC(p) 20
AFC(n) 19
FMDEM 18
IFGND 17
PILFIL 16
AFRO 15
23 VDDD
AFLO 14
MPXI 11
MUTE 13
24 MO/ST
LFI 12
AFO 10
Fig.2 Pin configuration.
1999 Aug 04
34 VSTAB(B)
FMRF ground
43
35 FM-IFO1
42
n.c.
36 AM-IFI/O2
RFGND
37 FM-IFI1
IFT or ceramic filter input (input impedance typical 3 kΩ)
38 VSTAB(A)
41
39 FM-ON/OFF
AM-IFI1
MBE820
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
FUNCTIONAL DESCRIPTION
PRESET OPERATION
The TEA5762 is an integrated radio circuit with
AM-receiver and FM-IF part with demodulator and stereo
decoder. The circuit includes digital tuning and control
functions.
In preset mode, the microcontroller has to load information
such as frequency band, frequency and mono/stereo. This
information has to be sent via the bus to the STR.
The internal algorithm controls the tuning sequence as
follows:
The radio
1. The information is loaded into a shift register, a
last-station memory and the counter.
The AM circuit incorporates a double balanced mixer, a
one-pin low-voltage oscillator (up to 30 MHz) and is
designed for distributed selectivity.
2. The Automatic Frequency Control (AFC) is switched
off.
3. The counter starts counting the VCO frequency and
the tuning voltage is varied until the desired frequency
roughly equals the real frequency.
The AM input is designed to be connected to the top of a
tuned circuit. AGC controls the IF amplification and for
large signals it lowers the input impedance of the AM
front-end.
4. The AFC is then switched on and the counter is
switched off.
The first AM selectivity can be an IF-Tank (IFT) as well as
an IFT combined with a ceramic filter; the second one is an
IFT.
5. The real frequency is more precisely tuned to the
desired frequency.
The frequency of the external VCO is counted in the Self
Tuned Radio (STR) tuning system.
After the AFC has tuned the real frequency to the desired
frequency an in-lock signal can be generated. In order to
get a reliable in-lock signal, there are two parameters
measured: the field strength and the S-curve. The field
strength indicates the strength of the station and by
looking at the S-curve the system can distinguish false
in-locks from real in-locks (false in-locks occur on the
wrong slope of the S-curve).
The FM-IF circuit is designed for distributed IF ceramic
filters. The FM quadratic detector uses a ceramic
resonator.
In the FM mode the tuning voltage controls the VCO of the
external FM front-end and the frequency of the VCO is
counted in the TEA5762.
The PLL stereo decoder incorporates a signal dependent
stereo-blend circuit and a soft-mute circuit.
In the event of fading or pulling the in-lock signal becomes
logic 0 and the synthesizer will be switched-on again and
the algorithm will be repeated.
For FM operation an external FM front-end is necessary.
This is switched on and off by the FM-ON/OFF signal
which is generated in the bus system.
The AFC circuit in the TEA5762 provides a tuning voltage
to drive the VCO of the external FM front-end.
Tuning
SEARCH OPERATION
The tuning-concept of Self Tuned Radio (STR) is based on
FUZZY LOGIC: it mimics hand tuning (hand tuning is a
combination of coarse and fine tuning to the qualitatively
best frequency position). As a consequence the tuning
system is very fast.
During a search operation, the only action the
microcontroller has to take is: sending the desired band
plus the direction and the search sensitivity level to the
STR. The search operation is performed by the charge
pump until an in-lock signal is generated (combination of
measuring the field strength and the S-curve). The AFC
then fine tunes to the station. The frequency belonging to
the found station will be counted by the counter and written
into the last-station memory and the shift register of the
counter. At this time the frequency is available in the shift
register and can be read by the microcontroller. The
microcontroller decides whether the frequency is within the
desired frequency band. If so, this frequency can be stored
under a preset and if not, a new search action should be
started.
The tuning algorithm, which is controlled by the sequential
circuit (see Fig.1), is completely integrated; so there are
only a few external components needed.
The bus and the microcontroller can be kept very simple.
The bus only consists of three wires (BUS-CLOCK, DATA
and WRITE-ENABLE). The microcontroller must basically
give two instructions:
• Preset operation
• Search operation.
1999 Aug 04
7
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
To ensure that the search function operates correctly
under all conditions the following search sequence must
be applied:
• Store the current frequency in the memory
These three signals, together with the mono/stereo pin
(MO/ST; pin 24), communicate with the microcontroller.
The mono/stereo indicator has two functions, which are
controlled by the BUS-CLOCK, as shown in Table 2.
• Issue the search command
Table 2
• Wait for data valid and read the new frequency
• If the new frequency is the same as the stored
frequency, issue a pre-set step (e.g. 50 kHz) and start
the search sequence again.
BUS-CLOCK
MO/ST (PIN 24)
LOW
LOW
stereo
Description of the bus
The TEA5762 radio has a bus which consists of three
wires, as shown in Table 1.
Table 1
DESCRIPTION
software driven clock input
27
DATA
data input/output
28
WRITE-ENABLE
write/read-input
29
Table 3
LOW
HIGH
mono
HIGH
LOW
tuned
HIGH
HIGH
not tuned
If in search mode no transmitter can be found, all
frequency bits of the shift register are set to logic 0.
PIN
BUS-CLOCK
RESULT
The TEA5762 has a 25-bit shift register; see Table 3 for an
explanation of the shift register bits.
Bus signals
SIGNAL
Bus-clock functions
The bus protocol is depicted in Figs 3 and 4.
Explanation of the shift register bits
BIT
S.24 (MSB)
D.23
LOGIC
STATE
DESCRIPTION
search start/end
search up/down
RESULT
0
after a search when a station is found or after a preset
1
during the search action
0
indicates if the radio has to search down
1
indicates if the radio has to search up
stereo is allowed
M.22
mono/stereo
0
1
mono is required (radio switched to forced mono)
B0.21
band
see Table 4
selects FM/MW/LW/SW band
B1.20
band
see Table 4
selects FM/MW/LW/SW band
P0.19
port
note 1
user programmable bits which e.g. can be used as band
switch driver
P1.18
port
note 1
user programmable bits which e.g. can be used as band
switch driver
S0.17
search-level of station
see Table 5
determines the locking field strength during an
automatic search, automatic store or manual search
S1.16
search-level of station
see Table 5
determines the locking field strength during an
automatic search, automatic store or manual search
15
dummy
−
buffer
F.14 to F.0 (LSB)
frequency
−
determine the tuning frequency of the radio; see Table 6
for the bit values
1999 Aug 04
8
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
Note
Table 6
1. The output pins 30 and 31 can drive currents up to
5 mA; bits 19 (P0) and 18 (P1) control the output
voltage of the control pins P0 (pin 30) and P1 (pin 31):
a) Bit 19 (P0) LOW sets P0 (pin 30) to LOW.
b) Bit 19 (P0) HIGH sets P0 (pin 30) to HIGH.
Values for bits 14 to 0
BIT
BIT VALUE
FM
VALUE(1)
(kHz)
AM
VALUE(2)
(kHz)
14
214
−
16384
13
213
102400
8192
c) Bit 18 (P1) LOW sets P1 (pin 31) to LOW.
12
212
51200
4096
d) Bit 18 (P1) HIGH sets P1 (pin 31) to HIGH.
11
211
25600
2048
10
210
12800
1024
9
29
6400
512
8
28
3200
256
Table 4
Truth table for bits 21 and 20
B0
B1
BAND SELECT
0
0
FM(1)
7
27
1600
128
0
1
MW
6
26
800
64
1
0
LW
5
25
400
32
1
1
SW
4
24
200
16
Note
3
23
100
8
1. When FM is selected, the control output FM-ON/OFF
is set LOW to switch on the external FM front-end.
2
22
50
4
1
21
25
2
0
20
12.5
1
Table 5
Truth table for bits 16 and 17
Notes
SIGNAL RECEPTION(1)
S1
S0
FM IF INPUT
(µV)
AM RF INPUT
(µV)
0
0
>50
>28
0
1
>100
>40
1
0
>300
>63
1
1
>1500
>1000
1. FM value of the affected oscillators:
FM VALUE = FMRF + FMIF.
2. AM value of the affected oscillators:
AM VALUE = AMRF + AMIF.
Note
1. The given values for signal reception are
corresponding to a −3 dB point of 20 µV for FM.
1999 Aug 04
9
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
READING DATA
WRITING DATA
While WRITE-ENABLE is LOW data can be read by the
microcontroller. At a rising edge of the BUS-CLOCK, data
is shifted out of the register. This data is available from the
point where the BUS-CLOCK is HIGH until the next rising
edge of the BUS-CLOCK occurs (see Fig.3).
While WRITE-ENABLE is HIGH the microcontroller can
transmit data to the TEA5762 (hard mute is active). At a
rising edge of the BUS-CLOCK, the register shifts and
accepts one bit into LSB. At clock LOW the microcontroller
writes data (see Fig.4).
To read the entire shift register 24 clock pulses are
necessary.
To write the entire shift register 25 clock pulses are
necessary.
handbook, full pagewidth
WRITE-ENABLE
data read
BUS-CLOCK
DATA
data available
data available after search ready
MSB is LOW
data shift
MBE817
Fig.3 Read data.
handbook, full pagewidth
WRITE-ENABLE
BUS-CLOCK
DATA
MBE818
data shift
data change
Fig.4 Write data.
1999 Aug 04
10
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
BUS TIMING
handbook, full pagewidth
WRITE-ENABLE
VIH
BUS-CLOCK
VIL
t HIGH t LOW
DATA
MBE819
t da
Fig.5 Bus timing.
Table 7
Digital inputs
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Digital inputs
VIH
HIGH-level input voltage
1.4
−
V
VIL
LOW-level input voltage
−
0.6
V
fclk
clock input
−
300
kHz
tHIGH
clock HIGH time
1.67
−
µs
tLOW
clock LOW time
1.67
−
µs
tda
shift register available after ‘search ready’
−
14
µs
Timing
1999 Aug 04
11
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCC1
supply voltage
Ptot
total power dissipation
Tstg
Tamb
CONDITIONS
MIN.
MAX.
UNIT
0
13.2
V
−
250
mW
storage temperature
−65
+150
°C
operating ambient temperature
−15
+60
°C
Tj
operating junction temperature
−15
+150
°C
Ves
electrostatic handling for all pins
−
±200
V
Tamb = 70 °C
note 1
Note
1. Charge device model; equivalent to discharging a 200 pF capacitor via a 0 Ω series resistor.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
1999 Aug 04
PARAMETER
CONDITIONS
thermal resistance from junction to ambient in free air
12
VALUE
UNIT
65
K/W
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
CHARACTERISTICS
VCC1 = 3 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC1
supply voltage
2.5
−
12
V
VCC2
supply voltage for tuning
−
−
12
V
VDDD
supply voltage for digital part
2.5
−
12
V
Vtune
tuning voltage
0.7
−
VCC2 − 0.75 V
ICC2
supply current for tuning in preset
mode (band-end to band-end)
−
−
800
µA
fBUS-CLOCK(max) maximum BUS-CLOCK frequency
−
−
300
kHz
ICC1
current consumption during acquisition AM mode
of VCC1
FM mode
12
15
18
mA
12.5
15.5
18.5
mA
IDD
current consumption during acquisition AM mode
of IDD
FM mode
−
4.8
−
mA
−
5.5
−
mA
ICC1
current consumption after acquisition
of VCC1
AM mode
12
15
18
mA
FM mode
13
16
19
mA
IDD
current consumption after acquisition
of IDD
AM mode
−
3.2
−
mA
FM mode
−
2.7
−
mA
tsearch
synthesizer auto-search time for empty FM mode
band
−
−
10
s
tacq
synthesizer preset acquisition time
between two band limits
FM
−
100
−
ms
MW
−
100
−
ms
LW
−
200
−
ms
SW
−
500(1)
−
ms
fband
frequency band range of the
synthesizer
AM mode
0.144
−
30
MHz
∆fFM
AFC inaccuracy of FM
with Mitsumi
front-end
−
−
1
kHz
∆fAM
AFC inaccuracy of AM
−
−
100
Hz
IP0/P1(sink)
sink current of software programmable VCC1 = 5 V
output P0/P1
4
6
−
mA
IP0/P1(source)
source current of software
programmable output P0/P1
5
9
−
mA
VCC1 = 5 V
Note
1. Depending on band.
1999 Aug 04
13
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
AM CHARACTERISTICS
Input frequency = 1 MHz; m = 0.3; fmod = 1 kHz; measured in test circuit at pin 10 (see Fig.9); S2 in position B;
Vi1 measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input
level; refer to test circuit (see Fig.9); unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V10
AF output voltage
Vi1 = 5 mV
36
45
70
mV
Vi1
RF sensitivity
S/N = 26 dB
40
55
70
µV
Vil
large signal voltage handling
capacity
m = 0.8; THD ≤ 8%
150
300
−
mV
PSRR
power supply ripple rejection
∆V7 = 100 mV (RMS);
100 Hz; V7 = 3.0 V
−
−47
−
dB
V 10 
 --------- ∆V 7
Ii
input current (pin 2)
V44 = 0.2 V
−
0
−
µA
Ci
input capacitance (pin 2)
V44 = 0.2 V
−
−
4
pF
Gc
front-end conversion gain
V44 = 0.2 V
5
10
14
dB
V44 = 0.9 V
−26
−14
0
dB
−
50
−
dB
S/N
signal-to-noise ratio
THD
total harmonic distortion
Vi1 = 1 mV
−
0.8
2.0
%
α450
IF suppression
V10 = 30 mV
−
56
−
dB
FM-IF CHARACTERISTICS
Input frequency = 10.7 MHz; ∆f = 22.5 kHz; fmod = 1 kHz; measured in test circuit (see Fig.9) at pin 10; S2 in position B;
refer to test circuit (see Fig.9); unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V10
AF output voltage
Vi4 = 10 mV
40
48
57
mV
Vi4
IF limiting sensitivity
V10 = −3 dB; V10 = 0 dB at
Vi4 = 10 mV
−
50
80
µV
PSRR
power supply ripple rejection
∆V7 = 100 mV (RMS);
100 Hz; V7 = 3.0 V
−44
−
−
dB
62
−
−
dB
0.3
0.8
%
V 10 
 --------- ∆V 7
S/N
signal-to-noise ratio
Vi4 = 10 mV
THD
total harmonic distortion
IF filter SFE10.7MS3A20K-A −
1999 Aug 04
14
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
STEREO DECODER CHARACTERISTICS
Vi3(L + R) = 155 mV; Vpilot = 15.5 mV; f = 1 kHz; apply unmodulated RF-signal of 100 mV to front-end to set radio to
maximum channel separation; soft mute off (S4 in position A); unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V14/15
AF output voltage
−
160
−
mV
Vpilot(s)
switch to stereo
−
8
12
mV
Vpilot(m)
switch to mono
2
5
−
mV
VAF-L/Vi3
MPX voltage gain
−1.5
−
+1.5
dB
S/N
signal-to-noise ratio
−
74
−
dB
Vpilot = 15.5 mV (stereo)
THD
total harmonic distortion
−
0.5
1.0
%
αcs
channel separation
26
30
−
dB
α19
carrier and harmonic suppression
19 kHz (200 mV) = 0 dB
27
32
−
dB
38 kHz
16
21
−
dB
α38
α
mute(s)
stereo-blend
soft mute depth
Vi4 = 5 mV
22
30
−
dB
Vi4 = 200 µV
−
1
2
dB
Vi4 = 30 µV; V14 = V15
−1
0
−
dB
Vi4 = 10 µV; V14 = V15
−
−6
−10
dB
TUNING CHARACTERISTICS
SYMBOL
VFM
PARAMETER
FM voltage levels
high (auto-store/search)
VAM
mute(h)
TYP.
MAX.
UNIT
α−3 dB-point at Vi4 = 20 µV
S0 = 1; S1 = 1
600
1500
5000
µV
medium (auto-store/search)
S0 = 0; S1 = 1
100
300
550
µV
S0 = 1; S1 = 0
40
100
200
µV
nominal (preset mode/tuning indication)
S0 = 0; S1 = 0
30
50
90
µV
AM voltage levels
α−3 dB-point at Vi4 = 20 µV
high (auto-store/search)
S0 = 1; S1 = 1
400
1000
2500
µV
medium (auto-store/search)
S0 = 0; S1 = 1
50
63
80
µV
low (auto-store/search)
S0 = 1; S1 = 0
32
40
50
µV
S0 = 0; S1 = 0
25
28
40
µV
FM mode
−
3
−
µV
AM mode
−
25
−
µV
−
60
−
dB
AFC voltage off mode
hard mute
1999 Aug 04
MIN.
low (auto-store/search)
nominal (preset mode/tuning indication)
VAFC(off)
CONDITIONS
α−3 dB-point at Vi4 = 20 µV
WRITE-ENABLE = HIGH
15
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0
20
40
60
80
100
(dBµV)
(dB)
0
(1)
120
9
THD
(%)
8
−10
7
−20
6
−30
5
(2)
16
−40
4
−50
3
−60
2
(3)
−70
−80
10−7
Philips Semiconductors
−20
10
Self Tuned Radio (STR)
1999 Aug 04
handbook, full pagewidth
1
10−6
10−5
10−4
10−3
10−2
10−1
0
Vi1 (V)
1
MBE853
Product specification
Fig.6 AM mode.
TEA5762
(1) Audio signal.
(2) Noise.
(3) Harmonic distortion.
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40
60
80
100
(dBµV)
(dB)
(1)
0
120
9
THD
(%)
8
(3)
−10
7
−20
Philips Semiconductors
20
10
Self Tuned Radio (STR)
1999 Aug 04
handbook, full 0
pagewidth
6
(4)
−30
5
−40
4
(2)
17
−50
3
(5)
−60
2
(6)
−70
1
(7)
−80
10−6
10−5
10−4
10−3
10−2
10−1
0
Vi1 (V)
1
MBE854
Fig.7 FM mode.
Product specification
Mono signal.
Noise in mono mode.
Left channel with modulation left.
Right channel with modulation left.
Noise in stereo mode.
Harmonic distortion ∆f = 75 kHz.
Total harmonic distortion ∆f = 22.5 kHz.
TEA5762
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
INTERNAL CIRCUITRY
Table 8
Equivalent pin circuits and pin voltages
PIN
1
SYMBOL
RIPPLE
DC VOLTAGE
(V)
AM
FM
2.1
2.1
EQUIVALENT CIRCUIT
7
1 kΩ
1
3 kΩ
MBE821
17
2
AM-RFI
0
70 pF
0
4
2
MBE822
3
RFGND
−
−
4
CGND
0
0
5
COUNTI
0
0
5
4
6
AMOSC
0
MBE823
0
6
4
7
VCC1
1999 Aug 04
3.0
3.0
18
MBE824
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
PIN
8
SYMBOL
TUNE
TEA5762
DC VOLTAGE
(V)
AM
FM
−
−
EQUIVALENT CIRCUIT
22
8
MBE825
26
9
VCO
1.3
0.95
1 kΩ
9
10 kΩ
MBE826
17
10
AFO
0.6
0.7
10
5 kΩ
MBE827
17
11
MPXI
1.23
1.23
150 kΩ
150 kΩ
11
9.5 kΩ
17
1999 Aug 04
19
MBE828
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
PIN
12
SYMBOL
LFI
TEA5762
DC VOLTAGE
(V)
AM
FM
0.1
0.8
EQUIVALENT CIRCUIT
4 kΩ
13 kΩ
12
MBE829
17
13
MUTE
0.7
0.7
7 kΩ
50 kΩ
13
MBE830
17
14
AFLO
0.65
0.65
14
5 kΩ
MBE831
17
15
AFRO
0.65
0.65
15
5 kΩ
17
1999 Aug 04
20
MBE832
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
PIN
16
SYMBOL
PILFIL
TEA5762
DC VOLTAGE
(V)
AM
FM
0.95
0.95
EQUIVALENT CIRCUIT
16
10 kΩ
10 kΩ
MBE833
17
17
IFGND
0
0
18
FMDEM
−
1.0
180 Ω
18
910 Ω
MBE834
17
19
AFC(n)
−
−
20
AFC(p)
−
−
10 kΩ
10 kΩ
19/20
MBE835
21
FSI
−
−
1.4 V
40 kΩ
21
12 to 34 kΩ
(dependent on
bits 16 and 17)
26
MBE836
22
VCC2
−
−
23
VDDD
3.0
3.0
1999 Aug 04
21
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
PIN
24
SYMBOL
MO/ST
TEA5762
DC VOLTAGE
(V)
AM
FM
−
−
EQUIVALENT CIRCUIT
24
100 Ω
MBE837
26
25
XTAL
−
−
50 kΩ
50 kΩ
50 kΩ
25
MBE838
26
26
DGND
0
0
27
BUS-CLOCK
−
−
27
MBE839
26
28
DATA
−
−
29
WRITEENABLE
−
−
100 Ω
28
100 kΩ
50 kΩ
29
26
1999 Aug 04
22
MBE840
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
PIN
30
SYMBOL
P0
TEA5762
DC VOLTAGE
(V)
AM
FM
−
−
EQUIVALENT CIRCUIT
23
120 Ω
100 kΩ
30
20 kΩ
MHA108
26
31
P1
−
−
23
120 Ω
100 kΩ
31
20 kΩ
MHA109
26
32
AFC
−
−
34
20 kΩ
32
MBE842
33
FM-IF12
−
0.73
34
140 Ω
33
2.2 kΩ
17
1999 Aug 04
23
6 pF
MBE843
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
PIN
34
SYMBOL
VSTAB(B)
TEA5762
DC VOLTAGE
(V)
AM
FM
1.4
1.4
EQUIVALENT CIRCUIT
7
1 kΩ
1
MBE844
34
35
FM-IFO1
−
0.69
34
560 Ω
35
MBE845
36
AM-IFI/O2
1.4
1.4
34
36
3.6 kΩ
3.6 kΩ
MBE846
17
37
FM-IFI1
−
0.73
38
140 Ω
37
1.9 kΩ
MBE847
17
38
VSTAB(A)
1.4
1.4
6 pF
7
1 kΩ
1
38
1999 Aug 04
24
MBE848
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
PIN
39
SYMBOL
FM-ON/OFF
TEA5762
DC VOLTAGE
(V)
AM
FM
−
−
EQUIVALENT CIRCUIT
500 Ω
39
MBE849
26
40
AM-MIXER
1.4
1.4
40
38
MBE850
41
AM-IF1I
1.4
1.4
38
3 kΩ
41
7.5 kΩ
7.5 kΩ
MBE851
17
42
RFGND2
0
0
43
n.c.
−
−
44
AGC
0.1
0.7
1 kΩ
1 kΩ
1 kΩ
44
17
1999 Aug 04
25
MBE852
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K1
150 Ω
IF-OUT
VSTAB(B)
VCC
220 Ω
(7)
VTUNE
220 kΩ
K2
DATA
GND
AGC
470
pF
n.c.
K3
BUSCLOCK
WRITEENABLE
(8)
100 nF
150 kΩ
35
37
ANT
33
29
28
27
17
18
21
10 kΩ 39
16
2.2 µF
VCC1
10 kΩ
68 kΩ
VCC1
24
VSTAB(A)
38
VSTAB(B)
34
MO/ST
470 nF
12
7
2.2 kΩ
10 Ω
100 nF
23
220 nF
470 nF
9
68 kΩ
100 1
µF
26
5
50 kΩ
12 nF
100 nF
(11)
TEA5762
14
AFLO
120 Ω
4
15
25
75 kHz
AFRO
100 nF
(11)
12 nF
13
(10)
26
GND
Philips Semiconductors
150 Ω
Self Tuned Radio (STR)
(6)
OSC-OUT
TEST AND APPLICATION INFORMATION
1999 Aug 04
VSTAB(A)
FM front-end
Mitsumi FE415-G11
19
470 nF
4.7 µF
TUNE
20
47 kΩ
BB112
(9)
2
22 nF
L1 (1)
32
18 pF
6
40
41
36
44
31
30
8
22
10
11
3
10 µF
(2)
L2
VSTAB(B)
L5 (5)
220 nF
(3)
470 pF
10 nF
(9)
Fig.8 Application diagram.
TUNE
VCC2
Product specification
VSTAB(B)
P0
TEA5762
TUNE
P1
VSTAB(A)
330 pF
MBE816
L4
BB112
47 kΩ
See Table 9 for figure notes.
470 nF
(4)
L3
handbook, full pagewidth
18 pF
18 pF
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VSTAB(B)
50 Ω
10.7 MHz
(7)
1 nF
BUSCLOCK
WRITEENABLE
K2 (8)
37
VCC1
100 nF
K1
35
33
29
28
27
17
18
21
16
39
FM-ON/OFF
FM
IF1
TUNER
SWITCH
FM
DETECTOR
FM
IF2
PILOT
DETECTOR
MO/ST
24
19 kHz
12
VCC1
38
34
7
VSTAB(A)
VSTAB(B)
AM/FM
INDICATOR
STATUS
REGISTER
SHIFT REGISTER
38 kHz
(11)
4
10
pF
TUNE
(6)
BB804
PRESCALER
stereo
PROGRAMMABLE
COUNTER
27
(9)
DGND
mono
stereo
FM SEQUENTIAL
CIRCUIT
AM
L1
1 MHz
6.8 Ω
100 nF
AFLO
CHARGE
PUMP
AFRO
100 nF
(11)
12 nF
SDS
13
MUTE
level
S4
A
B
4.7 µF
25
26
WINDOW
DETECTOR
CRYSTAL
OSCILLATOR
AFC
8.2 kΩ
TEA5762
19
20
50 Ω Vi1 43 Ω
12 nF
MATRIX
hard mute
75 kHz
50 kΩ
14
15
MULTIPLEXER
L6
up
IN-LOCK
down DETECTOR
level
LAST-STATION
MEMORY
5
18 kΩ
68 kΩ
DECODER
100 1
µF
220 nF
470 nF
9
23
100 nF
470 nF
2.2 kΩ
PLL
STABILIZER
10 Ω
10 kΩ
2.2 µF
Philips Semiconductors
330 Ω
Self Tuned Radio (STR)
1999 Aug 04
DATA
50 Ω Vi4
470 nF
32
(1)
2
AM
FRONT
END
AM
OSCILLATOR
AM
MIXER
AM
IF
V/I
CONVERTER
AM
DETECTOR
AGC
VSTAB(B)
L5 (5)
680 pF
6
40 41
L2
36
44
31
30
10 µF
S1
S2
450 kHz
VSTAB(B) P1 P0
Fig.9 Test circuit.
B
330 pF
S3
220 nF
Vi3
50 Ω
5 kΩ
50 Ω
TUNE VCC2
MPXI
MBE814
TEA5762
TUNE
VSTAB(A)
handbook, full pagewidth
220 µF
Vi2 50 Ω
470 pF
10 nF
L4
Product specification
(3)
470 nF
A
3 kΩ
(10)
47 kΩ
3
A
B
(4)
L3
BB112
11
B
A
See Table 9 for figure notes.
10
(2)
18 pF
18 pF
8 22
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
Table 9
TEA5762
Test and application components
FIGURE NOTE
DESCRIPTION
Application diagram; see Fig.8
1
L1 = 250 mH ferroceptor
2
L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80 TOKO
3
L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90 TOKO
4
L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90 TOKO
5
L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90 TOKO
6
K1 = SFE10.7MS3 MURATA
7
K2 = SFE10.7MS3 MURATA
8
K3 = CDA10.7-MG40-A discriminator ∆f = 20 kHz MURATA
9
alternatively BB512 (Siemens) or KV1561A TOKO
10
standard application: ±30 ppm at Tamb = 25 °C
short wave application: ±20 ppm at Tamb = 25 °C
11
de-emphasis time constant is 50 µs: Cdeem = 12 nF
de-emphasis time constant is 75 µs: Cdeem = 18 nF
Test circuit; see Fig.9
1
K1 = SFE10.7MS3 MURATA
2
K2 = CDA10.7-MG40-A discriminator ∆f = 20 kHz MURATA
3
L1 = 22281-30091
4
L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80 TOKO
5
L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90 TOKO
6
L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90 TOKO
7
L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90 TOKO
8
L6 = S18 301SS-0200
9
standard application: ±30 ppm at Tamb = 25 °C
short wave application: ±20 ppm at Tamb = 25 °C
10
11
alternatively BB512 (Siemens) or KV1561A TOKO
de-emphasis time constant is 50 µs: Cdeem = 12 nF
de-emphasis time constant is 75 µs: Cdeem = 18 nF
1999 Aug 04
28
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
PACKAGE OUTLINE
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm
SOT307-2
c
y
X
A
33
23
34
22
ZE
e
E HE
A A2
wM
(A 3)
A1
θ
bp
Lp
pin 1 index
L
12
44
1
detail X
11
wM
bp
e
ZD
v M A
D
B
HD
v M B
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HD
HE
L
Lp
v
w
y
mm
2.10
0.25
0.05
1.85
1.65
0.25
0.40
0.20
0.25
0.14
10.1
9.9
10.1
9.9
0.8
12.9
12.3
12.9
12.3
1.3
0.95
0.55
0.15
0.15
0.1
Z D (1) Z E (1)
1.2
0.8
1.2
0.8
θ
o
10
0o
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-02-04
97-08-01
SOT307-2
1999 Aug 04
EUROPEAN
PROJECTION
29
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
SOLDERING
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
1999 Aug 04
30
Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5762
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
REFLOW(1)
WAVE
BGA, SQFP
not suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not
PLCC(4), SO, SOJ
suitable
suitable(2)
suitable
suitable
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
not
recommended(4)(5)
suitable
not
recommended(6)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a s
3. older joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may
stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 04
31
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For all other countries apply to: Philips Semiconductors,
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Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
545002/02/pp32
Date of release: 1999
Aug 04
Document order number:
9397 750 06057