INTEGRATED CIRCUITS DATA SHEET TEA5551T 1-chip AM radio Product specification File under Integrated Circuits, IC01 October 1990 Philips Semiconductors Product specification 1-chip AM radio TEA5551T GENERAL DESCRIPTION The TEA5551T is a 1-chip monolithic integrated radio circuit which is designed for use as a pocket receiver with headphones in a supply voltage range (VS) of 1.8 V to 4.5 V. The circuit consists of a complete AM part and dual AF amplifier with low quiescent current. The AF part has low radiation (HF noise) and good overdrive performance. The dual AF amplifier makes the device suitable for operation in an AM/FM stereo receiver with or without stereo cassette player. The IC has a 1-pin switch for AM or other applications. Features • Low voltage operation (VS = 1.8 V to 4.5 V) • Low current consumption (Itot = 5 mA at VS = 3 V) • All pins provided with ESD protection AM part • High sensitivity (Vi = 1.5 µV for Vo = 10 mV) • Good IF suppression • Good signal handling (Vi(max) = 80 mV) • Switch for AM or other applications • Short waveband (> 40 MHz) AF part • A fixed integrated gain of 32 dB • Few external components required • Very low quiescent current • Low HF radiation and good AF overdrive performance • 0 to 20 kHz limited frequency response • 25 mW per channel output power in 32 Ω October 1990 2 Philips Semiconductors Product specification 1-chip AM radio TEA5551T QUICK REFERENCE DATA (at Tamb = 25 °C) PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Supply voltage VS 1.8 3.0 4.5 V Supply current I5 + I10 − 6 − mA Vo(AF) = 10 mV Vi(RF) − 1.5 − µV S/N = 26 dB Vi(RF) − 15 − µV S/N = 50 dB Vi(RF) − 10 − mV AF output voltage Vi(RF) = 1 mV Vo(AF) − 80 − mV Total harmonic distortion Vi(RF) = 100 µV to 30 mV THD − 0.8 − % Signal handling capability m = 0.8; THD = 10% Vi(RF) − 80 − mV AF part both channels driven Output power RL = 32 Ω; THD = 10% at VS = 3.0 V Po − 25 − mW at VS = 4.5 V Po − 60 − mW AM part m = 0.3 RF sensitivity RF input voltage Voltage gain Po = 10 mW Gv − 32 − dB Channel separation 1 kHz α − 50 − dB PACKAGE OUTLINE 16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 July 25. October 1990 3 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Philips Semiconductors 1-chip AM radio October 1990 4 Product specification TEA5551T Fig.1 Block diagram. Philips Semiconductors Product specification 1-chip AM radio TEA5551T PINNING 1 AM GND 9 AF output amplifier 2 2 AM mixer output 10 AF supply voltage (VS) 3 AM AGC 11 AF + input amplifier 2 4 AM-IF input 12 AF − input amplifier 1 5 AM supply voltage (VP) 13 AM detector output 6 AF + input amplifier 1 14 AM oscillator 7 AF GND 15 AM−RF input 8 AF output amplifier 1 16 AM−RF input Fig.2 All pins provided with ESD protection diodes to substrate. October 1990 5 Philips Semiconductors Product specification 1-chip AM radio TEA5551T RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT Supply voltage VS − 6 V Supply current (peak) IM − 150 mA Crystal temperature Tc − 150 °C tsc − 5 s Short-circuit protection VS = 4.5 V see Fig.3 Total power dissipation Ptot Storage temperature range Tstg −65 +150 °C Operating ambient temperature range Tamb −25 +60 °C QUALITY In accordance with UZW-BO/FQ-0601. Operating life endurance verified 2000 hours at Tj = 85 °C. The product meets the 600 V ESD on all pins (HBM specification UZW-BO/FQ-A302). THERMAL RESISTANCE From junction to ambient Rth j-a Fig.3 Power derating curve. October 1990 6 = 110 K/W Philips Semiconductors Product specification 1-chip AM radio TEA5551T DC CHARACTERISTICS All voltages are referenced to pin 1 and pin 7; all input currents are positive; all parameters are measured in test circuit of Fig.6 at VS = 3 V; Tamb = 25 °C unless otherwise specified PARAMETER SYMBOL MIN. TYP. MAX. UNIT VS 1.8 3.0 4.5 V pin 5 V5 1.6 2.8 4.3 V pin 10 V10 1.8 3.0 4.5 V Total current consumption (pin 5) I5 − 2.2 − mA Oscillator current (pin 14) I14 − 100 − µA Mixer current (pin 2) I2 − 200 − µA pin 3 V3 − 150 − mV pin 13 V13 − 600 − mV pin 15 V15 − 1.1 − V pin 16 V16 − 1.1 − V I5 − 4.0 − mA I11 + I16 − 40 − nA pin 8 V8 - 1.5 − V pin 9 V9 − 1.5 − V Supply voltage Voltages HF part Voltages AF part Total current consumption (pin 10) Input bias current (pin 11 connected to pin 16) DC output voltage October 1990 7 Philips Semiconductors Product specification 1-chip AM radio TEA5551T AC CHARACTERISTICS All parameters are measured in test circuit of Fig.6 at VS = 3 V; Tamb = 25 °C unless otherwise specified. RF conditions: Input frequency 1 MHz; 30% modulation where fmod = 1 kHz; unless otherwise specified. PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT RF sensitivity Vi(RF) − 1.5 − µV ∆Vi(RF) − 6 − dB Vi(RF) = 2 µV S/N − 6 − dB Vi(RF) = 15 µV S/N − 26 − dB Vi(RF) = 1 mV S/N − 46 − dB Vo(AF) − 80 − mV Vo(AF) − 55 − mV THD − 0.8 − % m = 0.8 THD − 10 − % Vi(RF1) = 50 mV Vi(RF1)/ Vi(RF2) − 86 − dB Zsource − 3 − kΩ α − 20 − dB Vi − 100 − mV Vi − * − mV RF input voltage Vo(AF) = 10 mV Loss in sensitivity Vo(AF) = 10 mV; VS = 1.8 V Noise Signal-to-noise ratio for RF input signal voltage of AF output voltage Vi(RF) = 1 mV Vi(RF) = 1 mV; VS = 1.8 V Total harmonic distortion Vi(RF) = 100 µV to 30 mV Vi(RF) = 80 mV; AGC range Change in RF input voltage for 10 dB change in AF output voltage Optimum source impedance IF suppression at Vo(AF) = 10 mV Oscillator (pin 14) note 1 fosc = 1468 kHz Oscillator voltage V5 = 1.5 V Note to the AC characteristics 1. V i at f i = 468 kHz α = ---------------------------------------------V i at f i = 1 MHz * Value to be fixed. October 1990 8 Philips Semiconductors Product specification 1-chip AM radio TEA5551T AC CHARACTERISTICS All parameters are measured in test circuit of Fig.6 at VS = 3 V; Tamb = 25 °C unless otherwise specified. RF conditions: f = 1 kHz; RL = 32 Ω; unless otherwise specified. PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Output power THD = 10% Po − 25 − mW THD = 10%; VS = 1.8 V Po − 8 − mW THD = 10%; VS = 4.5 V Po − 60 − mW Total harmonic distortion Po = 10 mW THD − 0.5 − % Voltage gain Po = 10 mW Gv − 32 − dB Noise output voltage RS = 5 kΩ; B = 15 kHz Vno − 240 − µV HF noise output voltage RS = 5 kΩ; B = 5 kHz; Vno(RF) − 20 − µV pin 11 connected to pin 12 Zi − 3 − MΩ V5 = 0 V; I13 = 0.32 mA − 200 − Ω Noise f = 500 kHz Input circuit Input impedance Mute switch AC impedance (pin 13 to ground) October 1990 RS 9 Philips Semiconductors Product specification 1-chip AM radio TEA5551T Conditions: fo = 1 MHz; fm = 1 kHz; VS = 3 V; Rg = 50 Ω; m = 0.3 (unless otherwise specified). Fig.4 Typical signal (S) and noise (N) output voltages, where Vo is the AF output voltage at pin 13, as a function of the input voltage Vi. Vi is the input voltage at pin 16. Also shown is the total harmonic distortion (THD). Conditions: VS = 3 V and 4.5 V; RL = 32 Ω; f = 1 kHz. Fig.5 October 1990 Total distortion (dtot) as a function of output power (Po). 10 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Philips Semiconductors 1-chip AM radio October 1990 11 7MCS2199 L2 7MCS2197 L3 7BRS10869X Fig.6 Test circuit. TEA5551T L1 Product specification Coil data: This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Philips Semiconductors 1-chip AM radio APPLICATION INFORMATION October 1990 12 7MCS2199 L2 7MCS2197 L3 7BRS10869X Fig.7 Application circuit. Product specification L1 TEA5551T Coil data: Philips Semiconductors Product specification 1-chip AM radio TEA5551T COIL DATA AM coils (Figs 6 and 7) Fig.8 IF bandpass filter (L1). TOKO sample no. 7MCS2199. Fig.9 IF bandpass filter (L2). TOKO sample no. 7MCS2197. October 1990 13 Philips Semiconductors Product specification 1-chip AM radio TEA5551T Fig.10 Oscillator coil (L3). TOKO sample no. 7BRS10869X. October 1990 14 Philips Semiconductors Product specification 1-chip AM radio TEA5551T PACKAGE OUTLINE SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 D E A X c y HE v M A Z 16 9 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 8 e 0 detail X w M bp 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 10.0 9.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.39 0.014 0.0075 0.38 0.16 0.15 0.244 0.050 0.041 0.228 0.039 0.016 0.028 0.020 inches 0.010 0.057 0.069 0.004 0.049 0.01 0.01 0.028 0.004 0.012 θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT109-1 076E07S MS-012AC October 1990 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-23 97-05-22 15 o 8 0o Philips Semiconductors Product specification 1-chip AM radio TEA5551T During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The longitudinal axis of the package footprint must be parallel to the solder flow. • The package footprint must incorporate solder thieves at the downstream end. October 1990 16 Philips Semiconductors Product specification 1-chip AM radio TEA5551T DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1990 17