DISCRETE SEMICONDUCTORS DATA SHEET BF861A; BF861B; BF861C N-channel junction FETs Product specification Supersedes data of 1995 Apr 14 File under Discrete Semiconductors, SC07 1997 Sep 04 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C FEATURES • High transfer admittance handbook, halfpage 2 • Low input capacitance 1 • Low feedback capacitance • Low noise. d g s APPLICATIONS 3 • Preamplifiers for AM tuners in car radios. Top view DESCRIPTION MAM036 Marking codes: BF861A: M33. BF861B: M34. BF861C: M35. N-channel symmetrical junction field effect transistors in a SOT23 package. Fig.1 Simplified outline and symbol. PINNING - SOT23 PIN SYMBOL DESCRIPTION 1 s source 2 d drain 3 g gate CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 25 BF861A 2 6.5 mA BF861B 6 15 mA BF861C 12 25 mA − 250 mW BF861A 12 20 mS BF861B 16 25 mS BF861C 20 30 mS VDS drain-source voltage (DC) IDSS drain current V VGS = 0; VDS = 8 V Ptot total power dissipation up to Tamb = 25 °C yfs forward transfer admittance VGS = 0; VDS = 8 V Ciss input capacitance f = 1 MHz − 10 pF Crss reverse transfer capacitance f = 1 MHz − 2.7 pF 1997 Sep 04 2 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) − 25 V VGSO gate-source voltage open drain − 25 V VDGO drain-gate voltage (DC) open source − 25 V IG forward gate current (DC) Ptot total power dissipation Tstg storage temperature Tj operating junction temperature − Note 1. Device mounted on an FR4 printed-circuit board. MRC166 300 Ptot (mW) 200 100 00 50 100 Tamb ( oC) 150 Fig.2 Power derating curve. 1997 Sep 04 10 mA 250 mW −65 +150 °C − 150 °C up to Tamb = 25 °C; note 1 − 3 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 500 K/W thermal resistance from junction to ambient; note 1 Note 1. Device mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C; VDS = 8 V; VGS = 0; unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)GSS gate-source breakdown voltage IG = −1 µA VGSoff gate-source cut-off voltage TYP. MAX. UNIT −25 − − V BF861A −0.2 − −1 V BF861B −0.5 − −1.5 V ID = 1 µA BF861C VGSS gate-source forward voltage IDSS drain current VDS = 0; IG = 1 mA BF861A −0.8 − −2 V − − 1 V 2 − 6.5 mA BF861B 6 − 15 mA BF861C 12 − 25 mA − − −1 nA BF861A 12 − 20 mS BF861B 16 − 25 mS BF861C 20 − 30 mS BF861A − − 200 µS BF861B − − 250 µS BF861C − − 300 µS − − 10 pF IGSS gate cut-off current yfs forward transfer admittance gos MIN. VGS = −20 V; VDS = 0 common source output conductance Ciss input capacitance f = 1 MHz Crss reverse transfer capacitance f = 1 MHz − 2.1 2.7 pF Vn/√B equivalent input noise voltage VGS = 0; f = 1 MHz − 1.5 − nV/√Hz 1997 Sep 04 4 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C MBD461 30 MBD462 300 handbook, halfpage I DSS gos (µS) (mA) 20 200 10 100 0 0 0 0.5 1 1.5 2 V GSoff (V) 0 10 15 20 I DSS (mA) 25 VDS = 8 V. VGS = 0. VDS = 8 V. Fig.3 5 Drain current as a function of gate-source cut-off voltage; typical values. Fig.4 MBD464 MBD463 30 Common-source output conductance as a function of drain current; typical values. 25 handbook, halfpage handbook, halfpage BF861C y fs (mS) 20 y fs (mS) BF861B BF861A 20 15 10 10 5 0 0 0 5 10 15 20 I DSS (mA) 0 25 VDS = 8 V. VGS = 0. Fig.5 5 10 15 I D (mA) 20 VDS = 8 V. Forward transfer admittance as a function of drain current; typical values. 1997 Sep 04 Fig.6 5 Forward transfer admittance as a function of drain current; typical values. Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C MBD466 MBD465 5 5 handbook, halfpage handbook, halfpage ID (mA) ID (mA) 4 4 3 3 V GS = 0 V 100 mV 2 2 1 1 200 mV 300 mV 0 0 0.8 1 0.6 0.4 0 0.2 0 VGS (V) BF861A VDS = 8 V. 2 4 6 8 10 V DS (V) BF861A VDS = 8 V. Fig.7 Typical input characteristics. Fig.8 Typical output characteristics. MBD468 MBD467 10 10 handbook, halfpage handbook, halfpage ID (mA) ID (mA) 8 8 6 6 4 4 V GS = 0 V 100 mV 200 mV 300 mV 400 mV 2 2 500 mV 0 0 0.8 1 0.6 0.4 0 0.2 0 VGS (V) BF861B VDS = 8 V. 2 4 6 8 10 V DS (V) BF861B VDS = 8 V. Fig.9 Typical input characteristics. 1997 Sep 04 Fig.10 Typical output characteristics. 6 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C MBD470 MBD469 20 20 handbook, halfpage handbook, halfpage ID (mA) ID (mA) V GS = 0 V 16 16 200 mV 400 mV 12 12 600 mV 800 mV 8 8 1V 4 4 0 0 2.5 2 1.5 1 0 0.5 0 VGS (V) BF861C VDS = 8 V. 2 4 6 8 10 V DS (V) BF861C VDS = 8 V. Fig.11 Typical input characteristics. Fig.12 Typical output characteristics. MBD471 10 MBD472 2 10halfpage handbook, handbook, halfpage Cis ,C rs I D = 10 mA (pF) IG 8 10 1 mA (nA) 0.1 mA 1 6 10 1 C is 10 2 4 I GSS 10 3 C rs 2 10 4 10 5 0 8 6 4 2 0 VGS (V) 0 5 10 15 20 25 VDG (V) VDS = 8 V. f = 1 MHz. VDS = 8 V. Fig.13 Input and reverse transfer capacitance as functions of gate-source voltage; typical values. 1997 Sep 04 Fig.14 Gate current as a function of drain-gate voltage; typical values. 7 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C MBD473 8 MBD474 10 2 handbook, halfpage Vn/ B (nV/ Hz) g is,b is (mS) 6 b is 10 4 g is 1 2 0 10 2 10 1 1 10 10 1 10 10 2 10 3 f (kHz) 10 2 10 3 f (MHz) VDS = 8 V. VGS = 0. Tamb = 25 °C. VDS = 8 V. VGS = 0. Fig.15 Equivalent input noise as a function of frequency; typical values. Fig.16 Common-source input admittance; typical values. MBD475 10 2 handbook, halfpage MBD476 10 2 handbook, halfpage grs,b rs (mS) gfs ,b fs 10 (mS) b rs 1 10 b fs g rs 10 1 10 2 10 1 10 2 f (MHz) 10 3 10 10 2 f (MHz) 10 3 VDS = 8 V. VGS = 0. Tamb = 25 °C. VDS = 8 V. VGS = 0. Tamb = 25 °C. Fig.17 Common-source reverse admittance; typical values. 1997 Sep 04 g fs Fig.18 Common-source forward transfer admittance; typical values. 8 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C MBD477 10 2 g os,bos (mS) 10 b os 1 g os 10 1 10 10 2 f (MHz) 10 3 VDS = 8 V. VGS = 0. Tamb = 25 °C. Fig.19 Common-source output admittance; typical values. 1997 Sep 04 9 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C PACKAGE OUTLINE 3.0 2.8 handbook, full pagewidth 0.55 0.45 B 1.9 0.150 0.090 0.95 2 1 0.1 max 10 o max 0.2 M A A 1.4 1.2 2.5 max 10 o max 3 1.1 max 30 o max 0.48 0.38 0.1 M A B TOP VIEW Dimensions in mm. Fig.20 SOT23. 1997 Sep 04 10 MBC846 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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