IRF IR3506

IR3506
DATA SHEET
XPHASE3TM DDR & VTT PHASE IC
DESCRIPTION
TM
The IR3506 Phase IC combined with IR3522 xPHASE3 Control ICs implements a full featured DDR3 power
solution. The IR3522 provides control functions for both the VDDR and VTT power rails and interfaces with any
number of IR3506 Phase ICs each driving and monitoring a single phase to power any number of DDR3
TM
DIMMs. The xPHASE3 architecture delivers a power supply that is smaller, more flexible, and easier to
design while providing higher efficiency than conventional approaches.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Power State Indicator (PSI) interface provides the capability to maximize efficiency at light loads
Anti-bias circuitry
7V/2A gate drivers (4A GATEL sink current)
Support loss-less inductor current sensing
Phase delay DFF bypassed during PSI assertion mode to improve output ripple performance
Over-current protection during PSI assertion mode operation
Integrated boot-strap synchronous PFET
Only four IC related external components per phase
3 wire analog bus connects Control and Phase ICs (VDAC, Error Amp, IOUT)
3 wire digital bus for accurate daisy-chain phase timing control without external components
Debugging function isolates phase IC from the converter
Self-calibration of PWM ramp, current sense amplifier, and current share amplifier
Single-wire bidirectional average current sharing
Soft-stop turn-off to insure VDDR and Vtt tracking
Small thermally enhanced 16L 3 x 3mm MLPQ package
RoHS Compliant
APPLICATION CIRCUIT
12V
15
13
CSIN+
PSI
BOOST
GATEL
PGND
GATEH
VCCL
12
CIN
11
CBST
L
10
VOUT+
9
U12
COUT
VOUT-
8
PHSIN
CLKIN
LGND
5
4
IR3506
PHASE
IC
DACIN
7
3
SW
6
2
RCS
U11
IOUT
PHSOUT
1
7 Wire
Bus to
Control
IC
CSIN-
16
EAIN
U1
14
CCS
CVCCL
VCCL
Page 1 of 21
V3.02
IR3506
ORDERING INFORMATION
Part Number
IR3506MTRPBF
Package
16 Lead MLPQ
(3 x 3 mm body)
16 Lead MLPQ
(3 x 3 mm body)
* IR3506MPBF
Order Quantity
3000 per reel
100 piece strips
* Samples only
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed below may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions beyond those indicated in the operational
sections of the specifications are not implied.
o
o
Operating Junction Temperature…………….. 0 C to 150 C
o
o
Storage Temperature Range………………….-65 C to 150 C
MSL Rating………………………………………2
o
Reflow Temperature…………………………….260 C
PIN #
PIN NAME
VMAX
VMIN
ISOURCE
ISINK
1
2
3
4
5
6
IOUT
DACIN
LGND
PHSIN
PHSOUT
CLKIN
8V
3.3V
n/a
8V
8V
8V
-0.3V
-0.3V
n/a
-0.3V
-0.3V
-0.3V
1mA
1mA
n/a
1mA
2mA
1mA
1mA
1mA
n/a
1mA
2mA
1mA
7
PGND
0.3V
-0.3V
n/a
8
GATEL
8V
9
VCCL
8V
-0.3V DC, -5V for
100ns
-0.3V
5A for 100ns,
200mA DC
5A for 100ns,
200mA DC
n/a
10
BOOST
40V
-0.3V
1A for 100ns,
100mA DC
5A for 100ns,
200mA DC
5A for 100ns,
200mA DC
3A for 100ns,
100mA DC
11
GATEH
40V
-0.3V DC, -5V for
100ns
3A for 100ns,
100mA DC
3A for 100ns,
100mA DC
12
SW
34V
-0.3V DC, -5V for
100ns
-0.3V
-0.3V
-0.3V
-0.3V
3A for 100ns,
100mA DC
1mA
1mA
1mA
1mA
n/a
13
PSI
8V
14
CSIN+
8V
15
CSIN8V
16
EAIN
8V
Note:
1. Maximum GATEH – SW = 8V
2. Maximum BOOST – GATEH = 8V
Page 2 of 21
1mA
1mA
1mA
1mA
V3.02
IR3506
RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGIN
o
4.75V ≤ VCCL ≤ 7.5V, 0.5V ≤ V(DACIN) ≤ 1.6V, 250kHz ≤ CLKIN ≤ 9MHz, 250kHz ≤ PHSIN ≤1.5MHz, 0 C ≤ TJ ≤
o
125 C
ELECTRICAL CHARACTERISTICS
The electrical characteristics table list the spread of critical values that are guaranteed to be within the
recommended operating conditions (unless otherwise specified). Typical values represent the median values, which
are related to 25°C. CGATEH = 3.3nF, CGATEL = 6.8nF (unless otherwise specified).
PARAMETER
Gate Drivers
GATEH Source Resistance
GATEH Sink Resistance
GATEL Source Resistance
GATEL Sink Resistance
GATEH Source Current
GATEH Sink Current
GATEL Source Current
GATEL Sink Current
GATEH Rise Time
GATEH Fall Time
GATEL Rise Time
GATEL Fall Time
GATEL low to GATEH high
delay
GATEH low to GATEL high
delay
Disable Pull-Down
Resistance
Clock
CLKIN Threshold
CLKIN Bias Current
CLKIN Phase Delay
PHSIN Threshold
PHSOUT Propagation
Delay
PHSIN Pull-Down
Resistance
PHSOUT High Voltage
PHSOUT Low Voltage
Page 3 of 21
TEST CONDITION
BOOST – SW = 7V. Note 1
BOOST – SW = 7V. Note 1
VCCL – PGND = 7V. Note 1
VCCL – PGND = 7V. Note 1
BOOST=7V, GATEH=2.5V, SW=0V.
BOOST=7V, GATEH=2.5V, SW=0V.
VCCL=7V, GATEL=2.5V, PGND=0V.
VCCL=7V, GATEL=2.5V, PGND=0V.
BOOST – SW = 7V, measure 1V to 4V
transition time
BOOST - SW = 7V, measure 4V to 1V
transition time
VCCL – PGND = 7V, Measure 1V to 4V
transition time
VCCL – PGND = 7V, Measure 4V to 1V
transition time
BOOST = VCCL = 7V, SW = PGND = 0V,
measure time from GATEL falling to 1V to
GATEH rising to 1V
BOOST = VCCL = 7V, SW = PGND = 0V,
measure time from GATEH falling to 1V to
GATEL rising to 1V
Note 1
Compare to V(VCCL)
CLKIN = V(VCCL)
Measure time from CLKIN<1V to
GATEH>1V
Compare to V(VCCL)
Measure time from CLKIN > (VCCL * 50% )
o
to PHSOUT > (VCCL *50%). 10pF @125 C
I(PHSOUT) = -10mA, measure VCCL –
PHSOUT
I(PHSOUT) = 10mA
MIN
TYP
MAX
UNIT
1.0
1.0
1.0
0.4
2.0
2.0
2.0
4.0
5
2.5
2.5
2.5
1.0
10
Ω
Ω
Ω
Ω
A
A
A
A
ns
5
10
ns
10
20
ns
5
10
ns
10
20
40
ns
10
20
40
ns
30
80
130
kΩ
-0.5
40
45
0.0
75
0.5
125
µA
ns
35
4
50
15
55
35
%
ns
30
100
170
kΩ
1
0.6
0.4
%
V
1
V3.02
V
IR3506
PARAMETER
PWM Comparator
TEST CONDITION
PWM Ramp Slope
V(VCCL) = 6.8 V
EAIN Bias Current
Minimum Pulse Width
Current Sense Amplifier
CSIN+/- Bias Current
CSIN+/- Bias Current
Mismatch
Input Offset Voltage
0 ≤ EAIN ≤ 3V
Note 1
Gain
Unity Gain Bandwidth
Slew Rate
Differential Input Range
Differential Input Range
Common Mode Input Range
o
Rout at TJ = 25 C
o
Rout at TJ = 125 C
IOUT Source Current
IOUT Sink Current
Share Adjust Amplifier
Input Offset Voltage
Gain
Unity Gain Bandwidth
PWM Ramp Floor Voltage
Maximum PWM Ramp Floor
Voltage
Minimum PWM Ramp Floor
Voltage
PSI Comparator
Rising Threshold Voltage
Falling Threshold Voltage
Hysteresis
Resistance
Floating Voltage
Page 4 of 21
Note 1
CSIN+ = CSIN- = DACIN. Measure
input referred offset from DACIN
0.5V ≤ V(DACIN) < 1.6V
C(IOUT)=10pF. Measure at IOUT.
Note 1
MIN
TYP
MAX
UNIT
46
-5
53
-0.3
55
63
5
70
mV/
%DC
µA
ns
-200
-50
0
0
200
50
nA
nA
-1
0
1
mV
30
4.8
32.5
6.8
35
8.8
V/V
MHz
6
0.8V ≤ V(DACIN) ≤ 1.6V, Note 1
0.5V ≤ V(DACIN) < 0.8V, Note 1
Note 1
Note 1
2.3
3.6
0.500
0.500
3.0
4.7
1.6
1.4
50
50
VCCL2.5V
3.7
5.4
2.9
2.9
Note 1
CSIN+ = CSIN- = DACIN. Note 1
Note 1
IOUT unconnected
Measured Relative to DACIN
IOUT = DACIN - 200mV
Measured relative to FLOOR voltage.
IOUT = DACIN + 200mV
Measured relative to FLOOR voltage
-3
3.6
4
-116
0
4.7
8.5
0
3
6.0
17
+116
120
180
240
-220
-160
-100
520
400
50
200
800
620
550
70
500
700
650
120
850
1150
Note 1
Note 1
Note 1
-10
-5
0
V/µs
mV
mV
V
kΩ
kΩ
mA
mA
mV
V/V
kHz
mV
mV
mV
V3.02
mV
mV
mV
kΩ
mV
IR3506
PARAMETER
TEST CONDITION
Diode Emulation Preset Comparator
Threshold Voltage
Step V(IOUT) up until GATEL drives
high. Compare to V(VCCL)
75 % Regulation Comparator
Threshold Voltage
The ratio of V(CSIN-) / V(DACIN), above
which diode emulation cannot occur.
Negative Current Comparator
Input Offset Voltage
Note 1
Propagation Delay Time
Step V(CSIN+) – V(CSIN-) from positive
to negative while V(IOUT) = VCCL.
Measure time to V(GATEL) < 1V.
Bootstrap Diode
Forward Voltage
I(BOOST) = 30mA, VCCL=6.8V
Debug Comparator
Threshold Voltage
Compare to V(VCCL)
General
VCCL Supply Current
BOOST Supply Current
4.75V ≤ V(BOOST)-V(SW) ≤ 8V
DACIN Bias Current
SW Floating Voltage
MIN
TYP
MAX
UNIT
-1.0
-0.8
-0.4
V
63
74
85
%
-16
30
0
200
16
380
mV
ns
360
520
960
mV
-1.6
-1.4
-1.2
V
4.2
0.5
-1.5
0.1
10
1.5
-0.75
0.3
16.1
3
1
0.4
mA
mA
µA
mA
Note 1: Guaranteed by design, but not tested in production
Page 5 of 21
V3.02
IR3506
PIN DESCRIPTION
PIN#
1
PIN SYMBOL
IOUT
2
DACIN
3
4
5
LGND
PHSIN
PHSOUT
6
7
8
9
CLKIN
PGND
GATEL
VCCL
10
BOOST
11
12
13
14
15
GATEH
SW
PSI
CSIN+
CSIN-
16
EAIN
Page 6 of 21
PIN DESCRIPTION
Output of the Current Sense Amplifier is connected to this pin through a 3kΩ
resistor. Voltage on this pin is equal to V(DACIN) + 32.5 [V(CSIN+) – V(CSIN-)].
Connecting all IOUT pins together, a share bus is implemented, which provides an
indication of the average current being supplied by all the phases. The Control IC,
for voltage positioning and over-current protection, uses this signal. OVP mode is
initiated if the voltage on this pin rises above V(VCCL)- 0.8V.
Reference voltage input from the Control IC. The Current Sense signal and PWM
ramp are referenced to the voltage on this pin.
Ground for internal IC circuits. IC substrate is connected to this pin.
Phase clock input.
Phase clock output.
Clock input.
Return for low side driver and reference for GATEH non-overlap comparator.
Low-side driver output and input to GATEH non-overlap comparator.
Supply for low-side driver. Internal bootstrap synchronous PFET is connected from
this pin to the BOOST pin.
Supply for high-side driver. Internal bootstrap synchronous PFET is connected
between this pin and the VCCL pin.
High-side driver output and input to GATEL non-overlap comparator.
Return for high-side driver and reference for GATEL non-overlap comparator.
Logic low is an active low (i.e. low = low power state).
Non-Inverting input to the current sense amplifier and input to debug comparator.
Inverting input to the current sense amplifier and input to synchronous rectification
disable comparator.
PWM comparator input from the error amplifier output of Control IC.
V3.02
IR3506
SYSTEM THEORY OF OPERATION
System Description
The system consists of one control IC (IR3522) and a scalable array of phase converters, each requiring one phase IC.
The control IC communicates with the phase ICs using three digital buses, i.e., CLOCK, PHSIN, PHSOUT and three
analog buses, i.e., DAC, EA, IOUT. The digital buses are responsible for switching frequency determination and
accurate phase timing control without any external component. The analog buses are used for PWM control and current
sharing among interleaved phases. The control IC incorporates all the system functions, i.e., VID, CLOCK signals, error
amplifier, fault protections, current monitor, etc. The Phase IC implements the functions required by the converter of
each phase, i.e., the gate drivers, PWM comparator and latch, over-voltage protection, current sensing and sharing, etc.
PWM Control Method
TM
The PWM block diagram of the XPhase architecture is shown in Figure 1. Voltage mode control with trailing edge
modulation is used. A high-gain wide-bandwidth voltage type error amplifier in the Control IC is used for the voltage
control loop. The PWM ramp slope will change with the input voltage and automatically compensate for changes in the
input voltage. The input voltage can change due to variations in the silver box output voltage or due to the wire and
PCB-trace voltage drop related to changes in load current.
GATE DRIVE
VOLTAGE
VIN
IR3522 CONTROL IC
PHSOUT
CLOCK GENERATOR
CLKOUT
IR3506 PHASE IC
CLKIN
VCCH
CLK Q
PWM
LATCH
D
PHSOUT
PHSIN
CBST
VOSNS1+
VCCL
SW
RESET
DOMINANT
VOUT1
COUT
-
EAIN
R
VCCL
+
GND
GATEL
ENABLE
+
PGND
+
VID6
-
REMOTE SENSE
AMPLIFIER
GATEH
S
PWM
COMPARATOR
PHSIN
VOSNS1-
-
RAMP
DISCHARGE
CLAMP
VOUT1
VREF1
LGND
-
EAOUT1
IOUT
-
CURRENT
SENSE
AMPLIFIER
VID6
VID6
+
+
-
3K
RCP1
VID6
VID6 +
RFB12
RFB11
CCP11
FB1
IFB1
+
CFB1
IROSC
CDRP1
VDRP1 AMP
VDRP1
CSIN+
+
CCP12
CCS
RCS
-
+
SHARE ADJUST
ERROR AMPLIFIER
-
VDAC
+
ERROR
AMPLIFIER
CSIN-
DACIN
RDRP1
PHSOUT
IR3506 PHASE IC
+
-
CLKIN
VCCH
CLK Q
Output 1 Only
IIN1
PWM
LATCH
D
PHSIN
GATEH
CBST
S
PWM
COMPARATOR
-
EAIN
VCCL
SW
RESET
DOMINANT
R
VCCL
+
GATEL
ENABLE
+
PGND
VID6
-
RAMP
DISCHARGE
CLAMP
SHARE ADJUST
ERROR AMPLIFIER
CURRENT
SENSE
AMPLIFIER
+
IOUT
-
3K
-
VID6
VID6
+
CSIN+
+
+
CCS
RCS
-
VID6
VID6 +
CSIN-
DACIN
Figure 1: PWM Block Diagram
Page 7 of 21
V3.02
IR3506
Frequency and Phase Timing Control
The oscillator is located in the Control IC and the system clock frequency is programmable from 250kHz to 9MHZ by an
external resistor. The control IC system clock signal (CLKOUT) is connected to CLKIN of all the phase ICs. The phase
timing of the phase ICs is controlled by the daisy chain loop, where control IC phase clock output (PHSOUT) is
connected to the phase clock input (PHSIN) of the first phase IC, and PHSOUT of the first phase IC is connected to
PHSIN of the second phase IC, etc. and PHSOUT of the last phase IC is connected back to PHSIN of the control IC.
During power up, the control IC sends out clock signals from both CLKOUT and PHSOUT pins and detects the
feedback at PHSIN pin to determine the phase number and monitor any fault in the daisy chain loop. Figure 2 shows the
phase timing for a four-phase converter. The switching frequency is set by the resistor ROSC as shown in Figure 9. The
clock frequency equals the number of phase times the switching frequency.
Control IC CLKOUT
(Phase IC CLKIN)
Control IC PHSOUT
(Phase IC1 PHSIN)
Phase IC1
PWM Latch SET
Phase IC 1 PHSOUT
(Phase IC2 PHSIN)
Phase IC 2 PHSOUT
(Phase IC3 PHSIN)
Phase IC 3 PHSOUT
(Phase IC4 PHSIN)
Phase IC4 PHSOUT
(Control IC PHSIN)
Figure 2: Four Phase Oscillator Waveforms
PWM Operation
The PWM comparator is located in the phase IC. Upon receiving the falling edge of a clock pulse, the PWM latch is sets
and the PWM ramp voltage begins to increase. In conjunction, the low side driver is turned off and the high side driver is
turned on after a non-overlap time. When the PWM ramp voltage exceeds the error amplifier’s output voltage, the PWM
latch is reset. This turns off the high side driver, turns on the low side driver after the non-overlap time, and activates the
ramp discharge clamp. The clamp drives the PWM ramp voltage to a level set by the share adjust amplifier until the next
clock pulse.
The PWM latch is reset dominant allowing all phases to go to zero duty cycle within a few tens of nanoseconds in
response to a load step decrease. Phases can overlap and go to a 100% duty cycle in response to a load step increase
with turn-on gated by the clock pulses. An error amplifier output voltage greater than the common mode input range of
the PWM comparator results in 100% duty cycle regardless of the voltage of the PWM ramp. This arrangement
guarantees the error amplifier is always in control and can demand 0 to 100% duty cycle as required. It also favors
response to a load step decrease which is appropriate given the low output to input voltage ratio of most systems. The
inductor current will increase much more rapidly than decrease in response to load transients. An additional advantage
of this PWM modulator is that differences in ground or input voltage at the phases have no effect on operation since the
PWM ramps are referenced to VDAC.
Figure 3 depicts PWM operating waveforms under various conditions.
Page 8 of 21
V3.02
IR3506
PHASE IC
CLOCK
PULSE
EAIN
PWMRMP
VDAC
GATEH
GATEL
STEADY-STATE
OPERATION
DUTY CYCLE INCREASE
DUE TO LOAD
INCREASE
DUTY CYCLE DECREASE
DUE TO VIN INCREASE
(FEED-FORWARD)
DUTY CYCLE DECREASE DUE TO LOAD
DECREASE (BODY BRAKING) OR FAULT
(VCCLUV, OCP, VID=11111X)
STEADY-STATE
OPERATION
Figure 3 PWM Operating Waveforms
Lossless Average Inductor Current Sensing
Inductor current can be sensed by connecting a series resistor and a capacitor network in parallel with the inductor and
measuring the voltage across the capacitor, as shown in Figure 4. The equation of the sensing network is,
vC ( s ) = vL ( s )
1
RL + sL
= iL ( s )
1 + sRCS CCS
1 + sRCS CCS
Usually the resistor Rcs and capacitor Ccs are chosen so that the time constant of Rcs and Ccs equals the time
constant of the inductor which is the inductance L over the inductor DCR (RL). If the two time constants match, the
voltage across Ccs is proportional to the current through L, and the sense circuit can be treated as if only a sense
resistor with the value of RL was used. The mismatch of the time constants does not affect the measurement of inductor
DC current, but affects the AC component of the inductor current.
vL
iL
Current
Sense Amp
L
RL
RCS
CCS
VO
CO
vCS
CSOUT
Figure 4 Inductor Current Sensing and Current Sense Amplifier
Page 9 of 21
V3.02
IR3506
The advantage of sensing the inductor current versus high side or low side sensing is that actual output current being
delivered to the load is obtained rather than peak or sampled information about the switch currents. The output voltage
can be positioned to meet a load line based on real time information. Except for a sense resistor in series with the
inductor, this is the only sense method that can support a single cycle transient response. Other methods provide no
information during either load increase (low side sensing) or load decrease (high side sensing).
An additional problem associated with peak or valley current mode control for voltage positioning is that they suffer from
peak-to-average errors. These errors will show in many ways but one example is the effect of frequency variation. If the
frequency of a particular unit is 10% low, the peak to peak inductor current will be 10% larger and the output impedance
of the converter will drop by about 10%. Variations in inductance, current sense amplifier bandwidth, PWM prop delay,
any added slope compensation, input voltage, and output voltage are all additional sources of peak-to-average errors.
Current Sense Amplifier
A high speed differential current sense amplifier is located in the phase IC, as shown in Figure 5. Its gain is nominally
32.5 and the 3850 ppm/ºC increase in inductor DCR should be compensated in the voltage loop feedback path.
The current sense amplifier can accept positive differential input up to 50mV and negative up to -10mV before clipping.
The output of the current sense amplifier is summed with the DAC voltage and sent to the control IC and other phases
through an on-chip 3KΩ resistor connected to the IOUT pin. The IOUT pins of all the phases are tied together and the
voltage on the share bus represents the average current through all the inductors and is used by the control IC for
voltage positioning and current limit protection. The input offset of this amplifier is calibrated to +/- 1mV in order to
reduce the current sense error.
The input offset voltage is the primary source of error for the current share loop. In order to achieve very small input
offset error and superior current sharing performance, the current sense amplifier continuously calibrates itself. This
calibration algorithm creates ripple on IOUT bus with a frequency of fsw/(32*28) in a multiphase architecture.
Average Current Share Loop
Current sharing between phases of the converter is achieved by the average current share loop in each phase IC. The
output of the current sense amplifier is compared with the average current at the share bus. If current in a phase is
smaller than the average current, the share adjust amplifier of the phase will pull down the starting point of the PWM
ramp, thereby increasing its duty cycle and output current. In contrary, if current in a phase is larger than the average
current, the share adjust amplifier of the phase will pull up the starting point of the PWM ramp thereby decreasing its
duty cycle and output current. The current share amplifier is internally compensated so that the crossover frequency of
the current share loop is much slower than that of the voltage loop and the two loops do not interact.
Page 10 of 21
V3.02
IR3506
IR3506 THEORY OF OPERATION
Block Diagram
The Block diagram of the IR3506 is shown in Figure 5, and specific features are discussed in the following sections.
CAL
1
15
CLKIN
PHSOUT
PHASE
DELAY
PHSIN
PHSIN
VCCL
BOOST
PWM COMPARATOR
EAIN
EAIN
PWM
PWM
-
GATE
DRIVERS
GATEH
+
SW
NONOVERLAP
CIRCUIT
VCCL
DACIN +
PWM RESET
VCCL
PWM RAMP
GENERATOR
GATEL
DACIN-SHARE_ADJ
GATEL
Disable
SHARE_ADJ
DIODE EMULATION
PRESET COMPARATOR
VCCL
-
0.8V
DE_PRESET
+
DEBUG OFF
(LOW=OPEN)
VCCL
GATEs
Disable
PGND
0.15V
DEBUG
COMPARATOR
DIODE
EMULATION
PRESET ENABLE
LATCH
-
PHSIN
CALIBRATION
VCCL
+
RMPOUT
IOUT
NEGATIVE CURRENT
COMPARATOR
75% REGULATION COMPARATOR
-
75PCT_REG
CURRENT SENSE
AMPLIFIER
-
3K
+
SHARE
ADJUST
AMPLIFIER
+
+
-
CAL
DACIN
CSAOUT
IROSC
DACIN
+
+
LGND
X
0.75
DACIN
IROSC
CSIN-
X32.5
+
CSIN+
CALIBRATION
1V
PHSIN
PSI
PSI
COMPARATOR
-
500K
PSI
+
610mV
510mV
Figure 5 Block diagram
Tri-State Gate Drivers
The gate drivers can deliver up to 2A peak current (4A sink current for bottom driver). An adaptive non-overlap
circuit monitors the voltage on the GATEH and GATEL pins to prevent MOSFET shoot-through current while
minimizing body diode conduction. The non-overlap latch is added to eliminate the error triggering caused by the
switching noise. An enable signal is provided by the control IC to the phase IC without the addition of a dedicated
signal line. The error amplifier output of the control IC drives low in response to any fault condition such as VCCL
under voltage or output overload.
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A synchronous rectification disable comparator is used to detect converter CSIN- pin voltage, which represents
local converter output voltage. If the voltage is below 75% of VOUT1 and negative current is detected during
startup, GATEL drives low, which disables synchronous rectification and eliminates negative current during powerup. Once VOUT1 reaches approximately 75 % of its nominal value, synchronous rectification is regain and can not
be disable again until the startup.
The gate drivers pull low if the supply voltages are below the normal operating range. An 80kΩ resistor is connected
across the GATEH/GATEL and PGND pins to prevent the GATEH/GATEL voltage from rising due to leakage or
other causes under these conditions.
Over Voltage Protection (OVP)
Output over-voltage might occur due to a high side MOSFET short or if the output voltage sense path is
compromised. If the over-voltage protection comparators sense that either VOUT1 pin voltage exceeds VREF1 by
260mV or VOUT2 exceeds VREF1, the over voltage fault latch is set which pulls the error amplifier output low to
turn off the converter power stage. The IR3522 communicates an OVP condition to the system by raising the
CROWBAR pin voltage to within V(VCCL) – 0.2 V. With the error amplifiers outputs low, the low-side MOSFET
turn-on within approximately 150ns. The low side MOSFET will remain low until the over voltage fault condition
latch cleared.
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IR3506
PWM Ramp
Every time the phase IC is powered up, PWM ramp magnitude is calibrated to generate a 53 mV/%DC. For
example, for a 15 % duty ratio the ramp amplitude is 795mV.
In response to a load step-up, the error amplifier can demand 100 % duty cycle. In order to avoid pulse
skipping under this scenario and allow the BOOST cap to replenish, a minimum off-time is allowed in this
mode of operation. As shown in Figure 6, 100 % duty is detected by comparing the PWM latch output
(PWMQ) and its input clock (PWM_CLK). If the PWMQ is high when the PWM_CLK is asserted, the TopFET
turnoff is initiated. The TopFET is again turned on once the RMPOUT drops within 200 mV of the VDAC.
NORMAL OPERATION
100 % DUTY OPERATION
CLKIN
PHOUT
(2 Phase Design)
EAIN
RMPOUT
PWMQ
Figure 1: PWM Operation during normal and 100 % duty mode.
Power State Indicator (PSI) function
From a system perspective, the PSI input is controlled by the system and is forced low when the load current
is lower than a preset limit and forced high when load current is higher than the preset limit. IR3506 can
accept an active low signal on its PSI input and force the drivers into tri-state, effectively forcing the phase IC
into off state. A PSI-assert signal activates three features in the Phase IC.
1) It disconnects the IOUT pin from the IOUT bus: From a system perspective, IOUT is used to report current
and is used for over-current protection. By disconnecting the disabled phase from the IOUT bus, proper
current reporting and over-current protection level is ensured.
2) The DFF is disabled and it appears as a pass-through to the daisy chain loop: By removing the DFF from
the daisy chain, the system ensures that proper phase delay is activated among the active phases.
3) The gate drivers are forced to tri-state, effectively, disabling the phase IC: Figure 7 shows the impact of
PSI-assert on the gate drivers. After 8 cycle PHSIN delay, at the next CLK falling edge, the PSI_SYNC goes
from 0 to 1. This disables the gate drives and shorts the DFF.
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IR3506
PSI
8 PHSIN Delay
CLK
PSI_SYNC
D_PWM LATCH
Figure 2: PSI assertion.
Debugging Mode
If CSIN+ pin is pulled up to VCCL voltage, IR3506 enters into debugging mode. Both drivers are pulled low
and IOUT output is disconnected from the current share bus, which isolates this phase IC from other phases.
However, the phase timing from PHSIN to PHSOUT does not change.
Emulated Bootstrap Diode
IR3506 integrates a PFET to emulate the bootstrap diode. If two or more top MOSFETs are to be driven at
higher switching frequency, an external bootstrap diode connected from VCCL pin to BOOST pin may be
needed.
Operation at Higher Output Voltage
The proper operation of the phase IC is ensured for maximum output voltage up to VCCL-2.5V if the differential
input (CSIN(+) – CSIN(-)) to current sense amplifier remain below 30 mV. Otherwise, the maximum voltage
output is calculated with the following equation:
Vo _ max = VCCL − 1.5 − Gcs * (VCSIN + − VCSIN − ),
where, Gcs is the current sense amplifier gain (typically 32.5).
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DESIGN PROCEDURES - IR3506
Inductor Current Sensing Capacitor CCS and Resistor RCS
The DC resistance of the inductor is utilized to sense the inductor current. Usually the resistor RCS and capacitor
CCS in parallel with the inductor are chosen to match the time constant of the inductor, and therefore the voltage
across the capacitor CCS represents the inductor current. If the two time constants are not the same, the AC
component of the capacitor voltage is different from that of the real inductor current. The time constant mismatch
does not affect the average current sharing among the multiple phases, but does effect the current signal IOUT as
well as the output voltage during the load current transient if adaptive voltage positioning is adopted.
Measure the inductance L and the inductor DC resistance RL. Pre-select the capacitor CCS and calculate RCS as
follows.
L RL
RCS =
(1)
C CS
Bootstrap Capacitor CBST
Depending on the duty cycle and gate drive current of the phase IC, a capacitor in the range of 0.1uF to 1uF is
needed for the bootstrap circuit.
Decoupling Capacitors for Phase IC
A 0.1uF-1uF decoupling capacitor is required at the VCCL pin.
CURRENT SHARE LOOP COMPENSATION
The internal compensation of current share loop ensures that crossover frequency of the current share loop is at
least one decade lower than that of the voltage loop so that the interaction between the two loops is eliminated.
The crossover frequency of current share loop is approximately 8 kHz.
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IR3506
LAYOUT GUIDELINES
The following layout guidelines are recommended to reduce the parasitic inductance and resistance of the
PCB layout, therefore minimizing the noise coupled to the IC.
• Dedicate at least one middle layer for a ground plane, which is then split into signal ground plane (LGND)
and power ground plane (PGND).
• Separate analog bus (EAIN, DACIN, and IOUT) from digital bus (CLKIN, PHSIN, and PHSOUT) to reduce
the noise coupling.
• Connect PGND to LGND pins to their respective ground planes through vias.
• Place current sense resistors and capacitors (RCS and CCS) close to phase IC. Use Kelvin connection for
the inductor current sense wires, but separate the two wires by ground polygon. The wire from the inductor
terminal to CSIN- should not cross over the fast transition nodes, i.e. switching nodes, gate drive outputs
and bootstrap nodes.
• Place the decoupling capacitor CVCCL as close as possible to the VCCL pin.
• Place the phase IC as close as possible to the MOSFETs to reduce the parasitic resistance and
inductance of the gate drive paths.
• Place the input ceramic capacitors close to the drain of top MOSFET and the source of bottom MOSFET.
Use combination of different packages of ceramic capacitors.
• There are two switching power loops. One loop includes the input capacitors, top MOSFET, inductor,
output capacitors and the load; another loop consists of bottom MOSFET, inductor, output capacitors and
the load. Route the switching power paths using wide and short traces or polygons; use multiple vias for
connections between layers.
To Gate
Drive
Voltage
To Digital Bus
To Analog Bus
LGND
PLANE
To VIN
IOUT
DACIN
ISHARE
DACIN
LGND
LGND
PHSIN
PHSIN
To VIN
R
EAIN
CLKIN
CSIN-
PGND
CSIN+
D BST
VCC
C
C VCC
CS
R CS
VCCL
C VCCL
SW
BOOST
SW
GATEH
VCCL
C
GATEH
VCC
BOOST
GATEL
VCCL
CS
C
C CS
PHSOUT
To Bottom
MOSFET
PGND
PLANE
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BST
C
C
D
BST
BST
To Switching
Node
To Top
MOSFET
To LGND
Plane
Ground
Polygon
To Inductor
V3.02
IR3506
PCB Metal and Component Placement
• Lead land width should be equal to nominal part lead width. The minimum lead to lead spacing should
be ≥ 0.2mm to prevent shorting.
• Lead land length should be equal to maximum part lead length + 0.3 mm outboard extension + 0.05mm
inboard extension. The outboard extension ensures a large and inspectable toe fillet, and the inboard
extension will accommodate any part misalignment and ensure a fillet.
• Center pad land length and width should be equal to maximum part pad length and width. However,
the minimum metal to metal spacing should be ≥ 0.17mm for 2 oz. Copper (≥ 0.1mm for 1 oz. Copper
and ≥ 0.23mm for 3 oz. Copper)
• Four 0.3mm diameter vias shall be placed in the pad land spaced at 0.85mm, and connected to ground
to minimize the noise effect on the IC, and to transfer heat to the PCB
• No pcb traces should be routed nor vias placed under any of the four corners of the IC package. Doing
so can cause the IC to raise up form the pcb resulting in poor solder joints to the IC leads.
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IR3506
Solder Resist
• The solder resist should be pulled away from the metal lead lands by a minimum of 0.06mm. The
solder resist mis-alignment is a maximum of 0.05mm and it is recommended that the lead lands are all
Non Solder Mask Defined (NSMD). Therefore pulling the S/R 0.06mm will always ensure NSMD pads.
• The minimum solder resist width is 0.13mm.
• At the inside corner of the solder resist where the lead land groups meet, it is recommended to provide
a fillet so a solder resist width of ≥ 0.17mm remains.
• The land pad should be Solder Mask Defined (SMD), with a minimum overlap of the solder resist onto
the copper of 0.06mm to accommodate solder resist mis-alignment. In 0.5mm pitch cases it is
allowable to have the solder resist opening for the land pad to be smaller than the part pad.
• Ensure that the solder resist in-between the lead lands and the pad land is ≥ 0.15mm due to the high
aspect ratio of the solder resist strip separating the lead lands from the pad land.
• The four vias in the land pad should be tented or plugged from bottom board side with solder resist.
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IR3506
Stencil Design
• The stencil apertures for the lead lands should be approximately 80% of the area of the lead lands. Reducing
the amount of solder deposited will minimize the occurrence of lead shorts. Since for 0.5mm pitch devices
the leads are only 0.25mm wide, the stencil apertures should not be made narrower; openings in stencils <
0.25mm wide are difficult to maintain repeatable solder release.
• The stencil lead land apertures should therefore be shortened in length by 80% and centered on the lead
land.
• The land pad aperture should be approximately 70% area of solder on the center pad. If too much solder is
deposited on the center pad the part will float and the lead lands will be open.
• The maximum length and width of the land pad stencil aperture should be equal to the solder resist opening
minus an annular 0.2mm pull back to decrease the incidence of shorting the center land to the lead lands
when the part is pushed into the solder paste.
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IR3506
PACKAGE INFORMATION
16L MLPQ (3 x 3 mm Body) – θJA = 38oC/W, θJC = 3oC/W
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IR3506
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
www.irf.com
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