IRF IR3505MPBF

IR3505
DATA SHEET
XPHASE3TM PHASE IC
DESCRIPTION
TM
The IR3505 Phase IC combined with an IR XPhase3 Control IC provides a full featured and flexible way to
implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides
overall system control and interfaces with any number of “Phase” ICs which each drive and monitor a single
TM
phase of a multiphase converter. The XPhase3 architecture results in a power supply that is smaller, less
expensive, and easier to design while providing higher efficiency than conventional approaches.
FEATURES
7V/2A gate drivers (4A GATEL sink current)
Support converter output voltage up to 5.1 V (Limited to VCCL-1.4V)
Support loss-less inductor current sensing
Feed-forward voltage mode control
Integrated boot-strap synchronous PFET
Only four IC related external components per phase
3 wire analog bus connects Control and Phase ICs (VDAC, Error Amp, ISHARE)
3 wire digital bus for accurate daisy-chain phase timing control without external components
Debugging function isolates phase IC from the converter
Self-calibration of PWM ramp, current sense amplifier, and current share amplifier
Single-wire bidirectional average current sharing
Small thermally enhanced 16L 3 x 3mm MLPQ package
RoHS compliant
•
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•
•
•
•
•
•
•
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•
APPLICATION CIRCUIT
12V
VCC
13
14
CSIN+
GATEH
BOOST
GATEL
PGND
RCS
VCCL
12
CIN
11
CBST
L
10
VOUT+
9
COUT
VOUT-
8
PHSIN
7
4
LGND
CLKIN
3
IR3505
PHASE
IC
DACIN
5
6 Wire
Bus to
Control
IC
SW
6
2
ISHARE
PHSOUT
1
CSIN-
EAIN
16
15
CCS
CVCCL
VCCL
Page 1 of 19
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Mar 04 , 2008
IR3505
ORDERING INFORMATION
Part Number
IR3505MTRPBF
Package
16 Lead MLPQ
(3 x 3 mm body)
16 Lead MLPQ
(3 x 3 mm body)
* IR3505MPBF
Order Quantity
3000 per reel
100 piece strips
* Samples only
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed below may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions beyond those indicated in the operational
sections of the specifications are not implied.
o
o
Operating Junction Temperature…………….. 0 C to 150 C
o
o
Storage Temperature Range………………….-65 C to 150 C
MSL Rating………………………………………2
o
Reflow Temperature…………………………….260 C
PIN #
PIN NAME
VMAX
VMIN
ISOURCE
ISINK
1
2
3
4
5
6
ISHARE
DACIN
LGND
PHSIN
PHSOUT
CLKIN
8V
3.3V
n/a
8V
8V
8V
-0.3V
-0.3V
n/a
-0.3V
-0.3V
-0.3V
1mA
1mA
n/a
1mA
2mA
1mA
1mA
1mA
n/a
1mA
2mA
1mA
7
PGND
0.3V
-0.3V
n/a
8
GATEL
8V
9
VCCL
8V
-0.3V DC, -5V for
100ns
-0.3V
5A for 100ns,
200mA DC
5A for 100ns,
200mA DC
n/a
10
BOOST
34V
-0.3V
1A for 100ns,
100mA DC
5A for 100ns,
200mA DC
5A for 100ns,
200mA DC
3A for 100ns,
100mA DC
11
GATEH
34V
-0.3V DC, -5V for
100ns
3A for 100ns,
100mA DC
3A for 100ns,
100mA DC
12
SW
34V
VCC
CSIN+
CSINEAIN
18V
8V
8V
8V
3A for 100ns,
100mA DC
n/a
1mA
1mA
1mA
n/a
13
14
15
16
-0.3V DC, -5V for
100ns
-0.3V
-0.3V
-0.3V
-0.3V
10mA
1mA
1mA
1mA
Note:
1. Maximum GATEH – SW = 8V
2. Maximum BOOST – GATEH = 8V
Page 2 of 19
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IR3505
RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGIN
8.0V ≤ VCC ≤ 16V, 4.75V ≤ VCCL ≤ 7.5V, 0.5V ≤ V(DACIN) ≤ 1.6V, 250kHz ≤ CLKIN ≤ 9MHz, 250kHz ≤ PHSIN
o
o
≤1.5MHz, 0 C ≤ TJ ≤ 125 C
ELECTRICAL CHARACTERISTICS
The electrical characteristics involve the spread of values guaranteed within the recommended operating conditions.
Typical values represent the median values, which are related to 25°C. CGATEH = 3.3nF, CGATEL = 6.8nF (unless
otherwise specified).
PARAMETER
Gate Drivers
GATEH Source Resistance
GATEH Sink Resistance
GATEL Source Resistance
GATEL Sink Resistance
GATEH Source Current
GATEH Sink Current
GATEL Source Current
GATEL Sink Current
GATEH Rise Time
GATEH Fall Time
GATEL Rise Time
GATEL Fall Time
GATEL low to GATEH high
delay
GATEH low to GATEL high
delay
Disable Pull-Down
Resistance
Clock
CLKIN Threshold
CLKIN Bias Current
CLKIN Phase Delay
PHSIN Threshold
PHSOUT Propagation
Delay
PHSIN Pull-Down
Resistance
PHSOUT High Voltage
PHSOUT Low Voltage
Page 3 of 19
TEST CONDITION
BOOST – SW = 7V. Note 1
BOOST – SW = 7V. Note 1
VCCL – PGND = 7V. Note 1
VCCL – PGND = 7V. Note 1
BOOST=7V, GATEH=2.5V, SW=0V.
BOOST=7V, GATEH=2.5V, SW=0V.
VCCL=7V, GATEL=2.5V, PGND=0V.
VCCL=7V, GATEL=2.5V, PGND=0V.
BOOST – SW = 7V, measure 1V to 4V
transition time
BOOST - SW = 7V, measure 4V to 1V
transition time
VCCL – PGND = 7V, Measure 1V to 4V
transition time
VCCL – PGND = 7V, Measure 4V to 1V
transition time
BOOST = VCCL = 7V, SW = PGND = 0V,
measure time from GATEL falling to 1V to
GATEH rising to 1V
BOOST = VCCL = 7V, SW = PGND = 0V,
measure time from GATEH falling to 1V to
GATEL rising to 1V
Note 1
Compare to V(VCCL)
CLKIN = V(VCCL)
Measure time from CLKIN<1V to
GATEH>1V
Compare to V(VCCL)
Measure time from CLKIN > (VCCL * 50% )
o
to PHSOUT > (VCCL *50%). 10pF @125 C
I(PHSOUT) = -10mA, measure VCCL –
PHSOUT
I(PHSOUT) = 10mA
MIN
TYP
MAX
UNIT
1.0
1.0
1.0
0.4
2.0
2.0
2.0
4.0
5
2.5
2.5
2.5
1.0
10
Ω
Ω
Ω
Ω
A
A
A
A
ns
5
10
ns
10
20
ns
5
10
ns
10
20
40
ns
10
20
40
ns
30
80
130
kΩ
40
-0.5
40
45
0.0
75
57
0.5
125
%
µA
ns
35
4
50
15
55
35
%
ns
30
100
170
kΩ
1
0.6
V
0.4
1
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Mar 04 , 2008
V
IR3505
PARAMETER
PWM Comparator
TEST CONDITION
PWM Ramp Slope
Vin=12V
Input Offset Voltage
EAIN Bias Current
Minimum Pulse Width
Minimum GATEH Turn-off
Time
Current Sense Amplifier
CSIN+/- Bias Current
CSIN+/- Bias Current
Mismatch
Input Offset Voltage
Note 1
0 ≤ EAIN ≤ 3V
Note 1
Gain
Unity Gain Bandwidth
Slew Rate
Differential Input Range
Differential Input Range
Common Mode Input Range
o
Rout at TJ = 25 C
o
Rout at TJ = 125 C
ISHARE Source Current
ISHARE Sink Current
Share Adjust Amplifier
Input Offset Voltage
Differential Input Range
Gain
Unity Gain Bandwidth
PWM Ramp Floor Voltage
Maximum PWM Ramp Floor
Voltage
Minimum PWM Ramp Floor
Voltage
Body Brake Comparator
Threshold Voltage with EAIN
falling.
Threshold Voltage with EAIN
rising.
Hysteresis
Propagation Delay
Page 4 of 19
Note 1
CSIN+ = CSIN- = DACIN. Measure
input referred offset from DACIN
0.5V ≤ V(DACIN) < 1.6V
C(ISHARE)=10pF. Measure at ISHARE.
Note 1
MIN
TYP
MAX
UNIT
42
-5
-5
52.5
0
-0.3
65
57
5
5
75
mV/
%DC
mV
µA
ns
20
80
160
nS
-200
-50
0
0
200
50
nA
nA
1
mV
35
8.8
V/V
MHz
50
50
Note2
3.7
5.4
2.9
2.9
V/µs
mV
mV
V
kΩ
kΩ
mA
mA
mV
V
V/V
kHz
mV
-1
30
4.8
32.5
6.8
6
0.8V ≤ V(DACIN) ≤ 1.6V, Note 1
0.5V ≤ V(DACIN) < 0.8V, Note 1
Note 1
Note 1
-10
-5
0
2.3
3.6
0.500
0.500
Note 1
Note 1
CSIN+ = CSIN- = DACIN. Note 1
Note 1
ISHARE unconnected
Measured Relative to DACIN
ISHARE = DACIN - 200mV
Measured relative to FLOOR with
ISHARE unconnected
ISHARE = DACIN + 200mV
Measured relative to FLOOR with
ISHARE unconnected
-3
-1
4
4
-116
5.0
8.5
0
3
1
6
17
+116
120
180
240
-220
-160
-100
-300
-200
-110
mV
-200
-100
-10
mV
70
40
105
65
130
90
mV
ns
Measured relative to PWM Ramp Floor
Voltage
Measured relative to PWM Ramp Floor
Voltage
VCCL = 5V. Measure time from EAIN <
V(DACIN) (200mV overdrive) to GATEL
transition to < 4V.
3.0
4.7
1.6
1.4
0
mV
mV
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Mar 04 , 2008
IR3505
PARAMETER
OVP Comparator
OVP Threshold
TEST CONDITION
Step V(ISHARE) up until GATEL drives
high. Compare to V(VCCL)
Propagation Delay
V(VCCL)=5V, Step V(ISHARE) up from
V(DACIN) to V(VCCL). Measure time to
V(GATEL)>4V.
Synchronous Rectification Disable Comparator
Threshold Voltage
The ratio of V(CSIN-) / V(DACIN), below
which V(GATEL) is always low.
Negative Current Comparator
Input Offset Voltage
Note 1
Propagation Delay Time
Apply step voltage to V(CSIN+) –
V(CSIN-). Measure time to V(GATEL)<
1V.
Bootstrap Diode
Forward Voltage
I(BOOST) = 30mA, VCCL=6.5V
Debug Comparator
Threshold Voltage
Compare to V(VCCL)
General
VCC Supply Current
VCCL Supply Current
BOOST Supply Current
4.75V ≤ V(BOOST)-V(SW) ≤ 8V
DACIN Bias Current
SW Bias Current
MIN
TYP
MAX
UNIT
-1.0
-0.8
-0.4
V
15
40
70
nS
66
75
86
%
-16
100
0
200
16
400
mV
nS
180
260
480
mV
-250
-150
-50
mV
1.1
3.1
1.2
3.0
6.7
3.5
6.1
12.1
5.8
mA
mA
mA
-1.5
-0.5
-0.75
-1.8
1
µA
-2.9
mA
Note 1: Guaranteed by design, but not tested in production
Note 2: VCCL-0.5V or VCC – 2.5V, whichever is lower
Page 5 of 19
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IR3505
PIN DESCRIPTION
PIN#
1
PIN SYMBOL
ISHARE
2
DACIN
3
4
5
LGND
PHSIN
PHSOUT
6
7
8
9
CLKIN
PGND
GATEL
VCCL
10
BOOST
11
12
13
14
15
GATEH
SW
VCC
CSIN+
CSIN-
16
EAIN
Page 6 of 19
PIN DESCRIPTION
Output of the Current Sense Amplifier is connected to this pin through a 3kΩ
resistor. Voltage on this pin is equal to V(DACIN) + 32.5 [V(CSIN+) – V(CSIN-)].
Connecting all ISHARE pins together creates a share bus which provides an
indication of the average current being supplied by all the phases. The signal is used
by the Control IC for voltage positioning and over-current protection. OVP mode is
initiated if the voltage on this pin rises above V(VCCL)- 0.8V.
Reference voltage input from the Control IC. The Current Sense signal and PWM
ramp is referenced to the voltage on this pin.
Ground for internal IC circuits. IC substrate is connected to this pin.
Phase clock input.
Phase clock output.
Clock input.
Return for low side driver and reference for GATEH non-overlap comparator.
Low-side driver output and input to GATEH non-overlap comparator.
Supply for low-side driver. Internal bootstrap synchronous PFET is connected from
this pin to the BOOST pin.
Supply for high-side driver. Internal bootstrap synchronous PFET is connected
between this pin and the VCCL pin.
High-side driver output and input to GATEL non-overlap comparator.
Return for high-side driver and reference for GATEL non-overlap comparator.
Supply for internal IC circuits.
Non-Inverting input to the current sense amplifier, and input to debug comparator.
Inverting input to the current sense amplifier, and input to synchronous rectification
disable comparator.
PWM comparator input from the error amplifier output of Control IC. Body Braking
mode is initiated if the voltage on this pin is less than V(DACIN).
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Sept 26 , 2007
IR3505
SYSTEM THEORY OF OPERATION
PWM Control Method
TM
The PWM block diagram of the XPhase architecture is shown in Figure 1. Feed-forward voltage mode control with
trailing edge modulation is used. A high-gain wide-bandwidth voltage type error amplifier in the Control IC is used
for the voltage control loop. Input voltage is sensed in phase ICs and feed-forward control is realized. The PWM
ramp slope will change with the input voltage and automatically compensate for changes in the input voltage. The
input voltage can change due to variations in the silver box output voltage or due to the wire and PCB-trace voltage
drop related to changes in load current.
GATE DRIVE
VOLTAGE
CONTROL IC
VIN
PHSOUT
PHASE IC
CLOCK GENERATOR
CLKOUT
VCC
CLKIN
CLK Q
VCCH
D
PHSOUT
1
PHSIN
1
2
D
CBST
VOSNS+
4
Q
SW
5
CLK Q
VOUT
R
PWM
COMPARATOR
COUT
-
VCCL
3
PHSIN
GATEH
RESET
DOMINANT
2
EAIN
+
GND
PWM LATCH
GATEL
ENABLE
+
REMOTE SENSE
AMPLIFIER
PGND
BODY
BRAKING
COMPARATOR
+
VID6
VOSNS-
-
-
+
-
RAMP
DISCHARGE
CLAMP
VO
LDO AMPLIFIER
VDAC
LGND
-
ISHARE
CURRENT
SENSE
AMPLIFIER
VID6
VID6
-
+
+
-
3K
RCOMP
VID6
VID6 +
RFB1
RFB
CCOMP
FB
RVSETPT
IVSETPT
IROSC
VDRP
AMP
CSIN+
+
CCOMP1
+
CFB
RCS
CSIN-
DACIN
RDRP1
PHSOUT
PHASE IC
RDRP
VSETPT
CCS
-
+
SHARE ADJUST
ERROR AMPLIFIER
EAOUT
-
VDAC
+
ERROR
AMPLIFIER
CDRP
VDRP
VCC
CLK Q
CLKIN
+
-
D
IIN
1
PHSIN
1
D
Q
CLK Q
GATEH
CBST
5
SW
R
2
4
3
PWM
COMPARATOR
VCCH
RESET
DOMINANT
2
EAIN
+
VCCL
PWM LATCH
ENABLE
+
VID6
-
RAMP
DISCHARGE
CLAMP
GATEL
BODY
BRAKING
COMPARATOR
PGND
-
+
SHARE ADJUST
ERROR AMPLIFIER
CURRENT
SENSE
AMPLIFIER
+
-
VID6
VID6
+
CSIN+
VID6
VID6 +
+
DACIN
CCS
RCS
-
-
3K
+
ISHARE
CSIN-
Figure 1 PWM Block Diagram
Frequency and Phase Timing Control
The oscillator is located in the Control IC and the system clock frequency is programmable from 250kHz to 9MHZ
by an external resistor. The control IC system clock signal (CLKOUT) is connected to CLKIN of all the phase ICs.
The phase timing of the phase ICs is controlled by the daisy chain loop, where control IC phase clock output
(PHSOUT) is connected to the phase clock input (PHSIN) of the first phase IC, and PHSOUT of the first phase IC is
connected to PHSIN of the second phase IC, etc. and PHSOUT of the last phase IC is connected back to PHSIN of
the control IC. During power up, the control IC sends out clock signals from both CLKOUT and PHSOUT pins and
detects the feedback at PHSIN pin to determine the phase number and monitor any fault in the daisy chain loop.
Figure 2 shows the phase timing for a four phase converter. The switching frequency is set by the resistor ROSC as
shown in Figure 9. The clock frequency equals the number of phase times the switching frequency.
Page 7 of 19
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IR3505
Control IC CLKOUT
(Phase IC CLKIN)
Control IC PHSOUT
(Phase IC1 PHSIN)
Phase IC1
PWM Latch SET
Phase IC 1 PHSOUT
(Phase IC2 PHSIN)
Phase IC 2 PHSOUT
(Phase IC3 PHSIN)
Phase IC 3 PHSOUT
(Phase IC4 PHSIN)
Phase IC4 PHSOUT
(Control IC PHSIN)
Figure 2 Four Phase Oscillator Waveforms
PWM Operation
The PWM comparator is located in the phase IC. Upon receiving the falling edge of a clock pulse, the PWM latch is
set; the PWM ramp voltage begins to increase; the low side driver is turned off, and the high side driver is turned on
after the non-overlap time. When the PWM ramp voltage exceeds the error amplifier’s output voltage the PWM latch
is reset. This turns off the high side driver, turns on the low side driver after the non-overlap time, and activates the
ramp discharge clamp. The clamp drives the PWM ramp voltage to the level set by the share adjust amplifier until
the next clock pulse.
The PWM latch is reset dominant allowing all phases to go to zero duty cycle within a few tens of nanoseconds in
response to a load step decrease. Phases can overlap and go up to 100% duty cycle in response to a load step
increase with turn-on gated by the clock pulses. An error amplifier output voltage greater than the common mode
input range of the PWM comparator results in 100% duty cycle regardless of the voltage of the PWM ramp. This
arrangement guarantees the error amplifier is always in control and can demand 0 to 100% duty cycle as required.
It also favors response to a load step decrease which is appropriate given the low output to input voltage ratio of
most systems. The inductor current will increase much more rapidly than decrease in response to load transients.
An additional advantage of this PWM modulator is that differences in ground or input voltage at the phases have no
effect on operation since the PWM ramps are referenced to VDAC.
Figure 3 depicts PWM operating waveforms under various conditions.
Page 8 of 19
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IR3505
PHASE IC
CLOCK
PULSE
EAIN
PWMRMP
VDAC
GATEH
GATEL
STEADY-STATE
OPERATION
DUTY CYCLE INCREASE
DUE TO LOAD
INCREASE
DUTY CYCLE DECREASE
DUE TO VIN INCREASE
(FEED-FORWARD)
DUTY CYCLE DECREASE DUE TO LOAD
DECREASE (BODY BRAKING) OR FAULT
(VCCLUV, OCP, VID=11111X)
STEADY-STATE
OPERATION
Figure 3 PWM Operating Waveforms
Body Braking
TM
In a conventional synchronous buck converter, the minimum time required to reduce the current in the inductor in
response to a load step decrease is;
TSLEW =
L * ( I MAX − I MIN )
VO
The slew rate of the inductor current can be significantly increased by turning off the synchronous rectifier in
response to a load step decrease. The switch node voltage is then forced to decrease until conduction of the
synchronous rectifier’s body diode occurs. This increases the voltage across the inductor from Vout to Vout +
VBODYDIODE. The minimum time required to reduce the current in the inductor in response to a load transient
decrease is now;
TSLEW =
L * ( I MAX − I MIN )
VO + VBODYDIODE
Since the voltage drop in the body diode is often comparable to the output voltage, the inductor current slew rate
can be increased significantly. This patented technique is referred to as “body braking” and is accomplished through
the “body braking comparator” located in the phase IC. If the error amplifier’s output voltage drops below the output
voltage of the share adjust amplifier in the phase IC, this comparator turns off the low side gate driver.
Lossless Average Inductor Current Sensing
Inductor current can be sensed by connecting a series resistor and a capacitor network in parallel with the inductor
and measuring the voltage across the capacitor, as shown in Figure 4. The equation of the sensing network is,
vC ( s ) = vL ( s )
1
RL + sL
= iL ( s )
1 + sRCS CCS
1 + sRCS CCS
Usually the resistor Rcs and capacitor Ccs are chosen so that the time constant of Rcs and Ccs equals the time
constant of the inductor which is the inductance L over the inductor DCR (RL). If the two time constants match, the
voltage across Ccs is proportional to the current through L, and the sense circuit can be treated as if only a sense
resistor with the value of RL was used. The mismatch of the time constants does not affect the measurement of
inductor DC current, but affects the AC component of the inductor current.
Page 9 of 19
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IR3505
vL
iL
Current
Sense Amp
L
RL
RCS
CCS
VO
CO
c
vCS
CSOUT
Figure 4 Inductor Current Sensing and Current Sense Amplifier
The advantage of sensing the inductor current versus high side or low side sensing is that actual output current being
delivered to the load is obtained rather than peak or sampled information about the switch currents. The output voltage
can be positioned to meet a load line based on real time information. Except for a sense resistor in series with the
inductor, this is the only sense method that can support a single cycle transient response. Other methods provide no
information during either load increase (low side sensing) or load decrease (high side sensing).
An additional problem associated with peak or valley current mode control for voltage positioning is that they suffer from
peak-to-average errors. These errors will show in many ways but one example is the effect of frequency variation. If the
frequency of a particular unit is 10% low, the peak to peak inductor current will be 10% larger and the output impedance
of the converter will drop by about 10%. Variations in inductance, current sense amplifier bandwidth, PWM prop delay,
any added slope compensation, input voltage, and output voltage are all additional sources of peak-to-average errors.
Current Sense Amplifier
A high speed differential current sense amplifier is located in the phase IC, as shown in Figure 5. Its gain is nominally
32.5 and the 3850 ppm/ºC increase in inductor DCR should be compensated in the voltage loop feedback path.
The current sense amplifier can accept positive differential input up to 50mV and negative up to -10mV before clipping.
The output of the current sense amplifier is summed with the DAC voltage and sent to the control IC and other phases
through an on-chip 3KΩ resistor connected to the ISHARE pin. The ISHARE pins of all the phases are tied together and
the voltage on the share bus represents the average current through all the inductors and is used by the control IC for
voltage positioning and current limit protection. The input offset of this amplifier is calibrated to +/- 1mV in order to
reduce the current sense error.
The input offset voltage is the primary source of error for the current share loop. In order to achieve very small input
offset error and superior current sharing performance, the current sense amplifier continuously calibrates itself. This
calibration algorithm creates ripple on ISHARE bus with a frequency of fsw/(32*28) in a multiphase architecture.
Average Current Share Loop
Current sharing between phases of the converter is achieved by the average current share loop in each phase IC. The
output of the current sense amplifier is compared with the average current at the share bus. If current in a phase is
smaller than the average current, the share adjust amplifier of the phase will pull down the starting point of the PWM
ramp thereby increasing its duty cycle and output current; if current in a phase is larger than the average current, the
share adjust amplifier of the phase will pull up the starting point of the PWM ramp thereby decreasing its duty cycle and
output current. The current share amplifier is internally compensated so that the crossover frequency of the current
share loop is much slower than that of the voltage loop and the two loops do not interact.
Page 10 of 19
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IR3505
IR3505 THEORY OF OPERATION
Block Diagram
The Block diagram of the IR3505 is shown in Figure 5, and specific features are discussed in the following sections.
CLKIN
PHSOUT
CLK Q
GATEH
DRIVER
D
PHSIN
PWM LATCH
100% DUTY LATCH
PWMQ
GATEH
PWMQ
CLK Q
D
Q
PWM_CLK
CLK Q
D
R
PWM_CLK
PWM COMPARATOR
EAIN
RESET
DOMINANT
GATEH NONOVERLAP
LATCH
-
Q
+
RMPOUT
PHSIN
VCC
BOOST
PWM RAMP
GENERATOR
VCC
VCCL
CALIBRATION
-
S
+
SET R
DOMINANT
PWM RESET
1V
GATEL NONOVERLAP
COMPARATOR
1V
GATEL NONOVERLAP
LATCH
DACIN-SHARE_ADJ
S
+
Q
SET R
DOMINANT
-
BODY BRAKING
100mV COMPARATOR
200mV
GATEL
DRIVER
+
-
DACIN +
OVP
COMPARATOR
SHARE_ADJ
SW
GATEH NONOVERLAP
COMPARATOR
NEGATIVE
CURRENT
LATCH
VCCL
GATEL
PGND
VCCL
Q
0.8V
+
DEBUG OFF
(LOW=OPEN)
ISHARE
RESET
DOMINANT
R
SYNCHRONOUS RECTIFICATION
DISABLE COMPARATOR
S
NEGATIVE CURRENT
COMPARATOR
SHARE
ADJUST
AMPLIFIER
-
3K
CSAOUT
+
+
-
+
IROSC
(CLKIN
PHSIN
DACIN
CSIN-
-
X33
+
CALIBRATION
DACIN
CURRENT SENSE
AMPLIFIER
+
-
CSIN+
+
X
0.75
CALIBRATION
DEBUG
COMPARATOR
0.2V
-
IF 1-PHASE)
LGND
+
IROSC
Figure 5 Block diagram
Tri-State Gate Drivers
The gate drivers can deliver up to 2A peak current (4A sink current for bottom driver). An adaptive non-overlap
circuit monitors the voltage on the GATEH and GATEL pins to prevent MOSFET shoot-through current while
minimizing body diode conduction. The non-overlap latch is added to eliminate the error triggering caused by the
switching noise. An enable signal is provided by the control IC to the phase IC without the addition of a dedicated
signal line. The error amplifier output of the control IC drives low in response to any fault condition such as VCCL
TM
under voltage or output overload. The IR3505 Body Braking comparator detects this and drives bottom gate
output low. This tri-state operation prevents negative inductor current and negative output voltage during powerdown.
A synchronous rectification disable comparator is used to detect converter CSIN- pin voltage, which represents
local converter output voltage. If the voltage is below 75% of VDAC and negative current is detected, GATEL drives
low, which disables synchronous rectification and eliminates negative current during power-up.
The gate drivers pull low if the supply voltages are below the normal operating range. An 80kΩ resistor is connected
across the GATEH/GATEL and PGND pins to prevent the GATEH/GATEL voltage from rising due to leakage or
other causes under these conditions.
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Page 11 of 19
Sept 26 , 2007
IR3505
Over Voltage Protection (OVP)
The IR3505 includes over-voltage protection that turns on the low side MOSFET to protect the load in the event
of a shorted high-side MOSFET, converter out of regulation, or connection of the converter output to an
excessive output voltage. As shown in Figure 6, if ISHARE pin voltage is above V(VCCL) – 0.8V, which
represents over-voltage condition detected by control IC, the over-voltage latch is set. GATEL drives high and
GATEH drives low. The OVP circuit overrides the normal PWM operation and within approximately 150ns will
fully turn-on the low side MOSFET, which remains ON until ISHARE drops below V(VCCL) – 0.8V when over
voltage ends. The over voltage fault is latched in control IC and can only be reset by cycling the power to
control IC. The error amplifier output (EAIN) is pulled down by control IC and will remain low. The lower
MOSFETs alone can not clamp the output voltage however an SCR or N-MOSFET could be triggered with the
OVP output to prevent processor damage.
OUTPUT
VOLTAGE
(VO)
OVP
THRESHOLD
VCCL-800 mV
ISHARE(IIN)
GATEH
GATEL
FAULT LATCH
(CONTROL IC)
ERROR
AMPLIFIER
INPUT
(EAIN)
VDAC
NORMAL OPERATION
OVP CONDITION
AFTER
OVP
Figure 6 - Over-voltage protection waveforms
PWM Ramp
Every time the phase IC is powered up PWM ramp magnitude is calibrated to generate a 50 mV/% ramp for a
VCC=12V. For example, for a 15% duty ratio the ramp amplitude is 750mV for VCC=12V. Feed-forward
control is achieved because the PWM ramp varies with VCC voltage proportionally after calibration.
Debugging Mode
If CSIN+ pin is pulled up to VCCL voltage, IR3505 enters into debugging mode. Both drivers are pulled low
and ISHARE output is disconnected from the current share bus, which isolates this phase IC from other
phases. However, the phase timing from PHSIN to PHSOUT does not change.
Page 12 of 19
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Sept 26 , 2007
IR3505
Emulated Bootstrap Diode
IR3505 integrates a PFET to emulate the bootstrap diode. An external bootstrap diode connected from VCCL
pin to BOOST pin can be added to reduce the drop across the PFET but is not needed in most applications.
APPLICATIONS INFORMATION
IR3505 EXTERNAL COMPONENTS
Inductor Current Sensing Capacitor CCS and Resistor RCS
The DC resistance of the inductor is utilized to sense the inductor current. Usually the resistor RCS and capacitor
CCS in parallel with the inductor are chosen to match the time constant of the inductor, and therefore the voltage
across the capacitor CCS represents the inductor current. If the two time constants are not the same, the AC
component of the capacitor voltage is different from that of the real inductor current. The time constant mismatch
does not affect the average current sharing among the multiple phases, but does effect the current signal ISHARE
as well as the output voltage during the load current transient if adaptive voltage positioning is adopted.
Measure the inductance L and the inductor DC resistance RL. Pre-select the capacitor CCS and calculate RCS as
follows.
L RL
(1)
RCS =
C CS
Bootstrap Capacitor CBST
Depending on the duty cycle and gate drive current of the phase IC, a capacitor in the range of 0.1uF to 1uF is
needed for the bootstrap circuit.
Decoupling Capacitors for Phase IC
A 0.1uF-1uF decoupling capacitor is required at the VCCL pin.
CURRENT SHARE LOOP COMPENSATION
The internal compensation of current share loop ensures that crossover frequency of the current share loop is at
least one decade lower than that of the voltage loop so that the interaction between the two loops is eliminated.
The crossover frequency of current share loop is approximately 8 kHz.
Output Voltage Bleed Resistor
The floating high side driver draws bias current from the BOOST pin (3.5mA typical). This current flows out of
the IR3505 through the SW pin and will charge up the output capacitor when the control IC is disabled. A
bleed resistor connected from the converter output voltage to ground is required to prevent the output voltage
from exceeding the control IC Over-Voltage protection threshold. The bleed resistor can be selected using the
following equation.
RBLEED = VBLEED / (5.8mA x N)
(2)
Where VBLEED is the maximum desired output voltage pre-bias and N is the number of IR3505 used in the
converter.
Optional phases
A converter can be designed to support more or less phases. This can be quite useful in situations where the final
load current is unknown or where increased load current may be required at some time in the future.
Page 13 of 19
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Sept 26 , 2007
IR3505
Figure 7 provides an application circuit that allows adjustment to the number of phases. By populating zero ohm
jumpers, or not; the number of phases can be adjusted by diverting the daisy chain timing from a 3505 to the next
one in sequence. The effect of more or less phases on converter performance can be tested without actually
removing a 3505 or it’s MOSFETs from the printed circuit board through use of a pull-up resistor from VCCL to
the CSIN+ pin to enable de-bug mode.
14
15
13
GATEL
VCCL
10
9
8
PGND
7
BOOST
R31
0 ohm
13
14
CSIN+
VCC
GATEH
BOOST
GATEL
PHSIN
PGND
LGND
SW
IR3505
PHASE
IC
VCCL
8
R21
DACIN
7
4
15
16
3
9
CSIN-
EAIN
10
ISHARE
CLKIN
2
PHSOUT
VCCL
1
11
6
14
13
VCC
BOOST
12
5
PHSIN
U3
GATEH
GATEL
LGND
8
R11
CSIN+
4
IR3505
PHASE
IC
PGND
3
9
DACIN
7
10
15
16
EAIN
2
CLKIN
11
PHSOUT
VCCL
VCC
CSIN+
16
EAIN
CSINCLKIN
PHSOUT
PHSIN
12
11
R33
0 ohm
SW
R22
0 ohm
12
11
10
9
R31
0 ohm
0 ohm
R12
open
LGND
GATEH
R32
open
ISHARE
6
BOOST
1
5
8
PGND
7
GATEH
GATEL
IR3505
PHASE
IC
12
CSIN-
13
U2
VCC
14
CSIN+
15
16
EAIN
PHSIN
4
SW
IR3505
PHASE
IC
R23
Open
SW
CLKIN
LGND
PHSOUT
4
DACIN
5
CLKOUT
3
25
PHSIN
PHSOUT
26
27
2
ISHARE
6
1
CSIN-
U1
3
9
DACIN
R22
open
R13
Open
IR3500
CONTROL
IC
10
ISHARE
0 ohm
R12
open
Two
Phase
2
R21
0 ohm
U0
1
11
6
14
15
13
VCC
VCCL
12
5
R11
BOOST
GATEL
PHSIN
GATEH
8
LGND
IR3505
PHASE
IC
PGND
4
DACIN
7
3
9
CSIN+
16
10
CSIN-
EAIN
2
SW
CLKIN
11
R33
Open
U3
ISHARE
PHSOUT
VCCL
1
6
14
15
13
VCC
GATEL
BOOST
12
5
5
GATEH
8
PHSIN
PGND
LGND
IR3505
PHASE
IC
7
4
SW
CLKIN
CLKOUT
PHSIN
PHSOUT
26
27
3
DACIN
25
Three
Phase
2
R23
Open
U2
ISHARE
PHSOUT
1
CSIN+
EAIN
U1
IR3500
CONTROL
IC
6
U0
CSIN-
16
R13
Open
open
R32
open
Figure 7 – Optional Phase application circuit
Page 14 of 19
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Sept 26 , 2007
IR3505
LAYOUT GUIDELINES
The following layout guidelines are recommended to reduce the parasitic inductance and resistance of the
PCB layout, therefore minimizing the noise coupled to the IC.
• Dedicate at least one middle layer for a ground plane, which is then split into signal ground plane (LGND)
and power ground plane (PGND).
• Separate analog bus (EAIN, DACIN, and ISHARE) from digital bus (CLKIN, PHSIN, and PHSOUT) to
reduce the noise coupling.
• Connect PGND to LGND pins to their respective ground planes through vias.
• Place current sense resistors and capacitors (RCS and CCS) close to phase IC. Use Kelvin connection for
the inductor current sense wires, but separate the two wires by ground polygon. The wire from the inductor
terminal to CSIN- should not cross over the fast transition nodes, i.e. switching nodes, gate drive outputs
and bootstrap nodes.
• Place the decoupling capacitor CVCCL as close as possible to the VCCL pin.
• Place the phase IC as close as possible to the MOSFETs to reduce the parasitic resistance and
inductance of the gate drive paths.
• Place the input ceramic capacitors close to the drain of top MOSFET and the source of bottom MOSFET.
Use combination of different packages of ceramic capacitors.
• There are two switching power loops. One loop includes the input capacitors, top MOSFET, inductor,
output capacitors and the load; another loop consists of bottom MOSFET, inductor, output capacitors and
the load. Route the switching power paths using wide and short traces or polygons; use multiple vias for
connections between layers.
To Gate
Drive
Voltage
To Digital Bus
LGND
PLANE
To VIN
To Analog Bus
To VIN
ISHARE
R
DACIN
LGND
PHSIN
ISHARE
PHSIN
LGNDDACIN
EAIN
PHSOUT
CLKIN
CSIN- -
PGND
CSIN+
GATEL
VCC
C VCCL
CCS
CS
C
SW
SW
GATEH
VCCLBOOST
VCC
C
RCS
C
C VCC
GATEH
BOOST
VCCL
VCCL
D BST
CS
D
To Bottom
MOSFET
PGND
PLANE
Page 15 of 19
C BST
BST
BST
C
To Switching
Node
To Top
MOSFET
To LGND
Plane
Ground
Polygon
To Inductor
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Sept 26 , 2007
IR3505
PCB Metal and Component Placement
• Lead land width should be equal to nominal part lead width. The minimum lead to lead spacing should
be ≥ 0.2mm to minimize shorting.
• Lead land length should be equal to maximum part lead length + 0.3 mm outboard extension + 0.05mm
inboard extension. The outboard extension ensures a large and inspectable toe fillet, and the inboard
extension will accommodate any part misalignment and ensure a fillet.
• Center pad land length and width should be equal to maximum part pad length and width. However, the
minimum metal to metal spacing should be ≥ 0.17mm for 2 oz. Copper (≥ 0.1mm for 1 oz. Copper and ≥
0.23mm for 3 oz. Copper)
• Four 0.3mm diameter vias shall be placed in the pad land spaced at 0.85mm, and connected to ground
to minimize the noise effect on the IC, and to transfer heat to the PCB
Page 16 of 19
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Sept 26 , 2007
IR3505
Solder Resist
• The solder resist should be pulled away from the metal lead lands by a minimum of 0.06mm. The
solder resist mis-alignment is a maximum of 0.05mm and it is recommended that the lead lands are all
Non Solder Mask Defined (NSMD). Therefore pulling the S/R 0.06mm will always ensure NSMD pads.
• The minimum solder resist width is 0.13mm.
• At the inside corner of the solder resist where the lead land groups meet, it is recommended to provide
a fillet so a solder resist width of ≥ 0.17mm remains.
• The land pad should be Solder Mask Defined (SMD), with a minimum overlap of the solder resist onto
the copper of 0.06mm to accommodate solder resist mis-alignment. In 0.5mm pitch cases it is
allowable to have the solder resist opening for the land pad to be smaller than the part pad.
• Ensure that the solder resist in-between the lead lands and the pad land is ≥ 0.15mm due to the high
aspect ratio of the solder resist strip separating the lead lands from the pad land.
• The four vias in the land pad should be tented or plugged from bottom board side with solder resist.
Page 17 of 19
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Sept 26 , 2007
IR3505
Stencil Design
• The stencil apertures for the lead lands should be approximately 80% of the area of the lead lands.
Reducing the amount of solder deposited will minimize the occurrence of lead shorts. Since for 0.5mm
pitch devices the leads are only 0.25mm wide, the stencil apertures should not be made narrower;
openings in stencils < 0.25mm wide are difficult to maintain repeatable solder release.
• The stencil lead land apertures should therefore be shortened in length by 80% and centered on the lead
land.
• The land pad aperture should be approximately 70% area of solder on the center pad. If too much
solder is deposited on the center pad the part will float and the lead lands will be open.
• The maximum length and width of the land pad stencil aperture should be equal to the solder resist
opening minus an annular 0.2mm pull back to decrease the incidence of shorting the center land to the
lead lands when the part is pushed into the solder paste.
Page 18 of 19
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Sept 26 , 2007
IR3505
PACKAGE INFORMATION
16L MLPQ (3 x 3 mm Body) – θJA = 38oC/W, θJC = 3oC/W
Data and specifications subject to change without notice.
This product will be designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
www.irf.com
Page 19 of 19
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